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    2SD60 Price and Stock

    Crydom Inc F1892SD600

    MODULE SCR/DIODE 90A 240VAC
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    DigiKey F1892SD600 Bulk 6 1
    • 1 $169.43
    • 10 $161.37
    • 100 $169.43
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    RS F1892SD600 Bulk 16 Weeks 5
    • 1 -
    • 10 $164.59
    • 100 $146.49
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    TME F1892SD600 1
    • 1 $152
    • 10 $104.29
    • 100 $104.29
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    Neutron USA F1892SD600 31
    • 1 $312.91
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    Samtec Inc EW-25-12-S-D-600

    CONN HDR 50POS 0.1 STACK T/H
    Free Sample
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    DigiKey EW-25-12-S-D-600 Bulk 1
    • 1 $16.7
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    Avnet Americas EW-25-12-S-D-600 Bulk 1
    • 1 $10.09
    • 10 $9.33
    • 100 $6.62
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    Newark EW-25-12-S-D-600 Bulk 1
    • 1 $11.16
    • 10 $10.12
    • 100 $8.44
    • 1000 $6.75
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    Powell Electronics EW-25-12-S-D-600 201 1
    • 1 $10.09
    • 10 $9.33
    • 100 $6.62
    • 1000 $6.62
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    Master Electronics EW-25-12-S-D-600
    • 1 -
    • 10 $10.93
    • 100 $7.4
    • 1000 $5
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    Sager EW-25-12-S-D-600 305 1
    • 1 $10.09
    • 10 $9.33
    • 100 $6.62
    • 1000 $5.99
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    JRH Electronics EW-25-12-S-D-600

    STACKING BOARD CONNECTOR, EW SER
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    DigiKey EW-25-12-S-D-600 Bulk 1
    • 1 $18.35
    • 10 $16.964
    • 100 $12.0364
    • 1000 $12.0364
    • 10000 $12.0364
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    JRH Electronics DW-09-12-S-D-600

    STACKING BOARD CONNECTOR, DW SER
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    DigiKey DW-09-12-S-D-600 Bulk 1
    • 1 $6.95
    • 10 $6.95
    • 100 $5.5636
    • 1000 $4.29092
    • 10000 $4.29092
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    Samtec Inc DW-09-12-S-D-600

    CONN HDR 18POS 0.1 STACK T/H
    Free Sample
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    DigiKey DW-09-12-S-D-600 Bulk 1
    • 1 $4.61
    • 10 $4.61
    • 100 $4.61
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    Mouser Electronics DW-09-12-S-D-600
    • 1 $3.63
    • 10 $3.63
    • 100 $2.75
    • 1000 $1.95
    • 10000 $1.23
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    Newark DW-09-12-S-D-600 Bulk 1
    • 1 $4.57
    • 10 $4.36
    • 100 $3.66
    • 1000 $2.63
    • 10000 $2.37
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    Powell Electronics DW-09-12-S-D-600 487 1
    • 1 $3.82
    • 10 $3.82
    • 100 $3.06
    • 1000 $2.36
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    Avnet Abacus DW-09-12-S-D-600 3 Weeks 1
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    Master Electronics DW-09-12-S-D-600
    • 1 -
    • 10 $4.38
    • 100 $3.51
    • 1000 $2.25
    • 10000 $1.28
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    Find more 2SD60 price and stock on Findchips.com

    2SD60 Datasheets (136)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SD60 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SD60 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    2SD60 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2SD60 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SD60 Unknown Discontinued Transistor Data Book 1975 Scan PDF
    2SD60 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SD60 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SD60 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SD60 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SD60 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SD60 Unknown Cross Reference Datasheet Scan PDF
    2SD600 Sanyo Semiconductor 100V/120V, 1A Low-Frequency Power Amp Applications Original PDF
    2SD600 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SD600 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    2SD600 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2SD600 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SD600 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SD600 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SD600 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SD600 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    ...

    2SD60 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SB631

    Abstract: 2SB631K
    Text: JMnic Product Specification 2SB631 2SB631K Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-126 package ・Complement to type 2SD600/K ・High breakdown voltage VCEO:-100/-120V ・High current: -1A ・Low saturation voltage,excellent hFE linearity


    Original     		PDF 2SB631 2SB631K O-126 2SD600/K -100/-120V 2SB631 -50mA 2SB631K

    2SD600K

    Abstract: 2sd600* transistor Spice Parameter, Bipolar Transistor
    Text: 2SD600K SPICE PARAMETER NPN Bipolar Transistor model : Gummel-Poon Parameter Value IS 210.0f NF 1 IKF 500.0m NE 2 NR 1 IKR 240.0m NC 2 IRB 20.00m RE 125.0m XTB XTI 3 VJE 680.0m TF 1.5n VTF 100 PTF VJC 500.0m XCJC 1 FC 500.0m AF 1 Temp = Date : Unit A A A A


    Original     		PDF 2SD600K 2SD600K 2sd600* transistor Spice Parameter, Bipolar Transistor

    2SB0709A

    Abstract: 2SB709A 2SD0601A 2SD601A
    Text: Transistor 2SB0709A 2SB709A Silicon PNP epitaxial planer type For general amplification Complementary to 2SD0601A (2SD601A) Unit: mm 0.40+0.10 ñ0.05 0.4±0.2 5° 1.50+0.25 -0.05 High foward current transfer ratio hFE. Mini type package, allowing downsizing of the equipment and


    Original     		PDF 2SB0709A 2SB709A) 2SD0601A 2SD601A) 2SB0709A 2SB709A 2SD0601A 2SD601A

    transistor MAR 543

    Abstract: 2SB709A 2SD0601A 2SD601A 2SB0709A
    Text: Transistor 2SD0601A 2SD601A Silicon NPN epitaxial planer type For general amplification Complementary to 2SB0709A (2SB709A) Unit: mm 0.40+0.10 ñ0.05 • Features 5° 0.4±0.2 2.8+0.2 -0.3 1.50+0.25 -0.05 (Ta=25˚C) Parameter Symbol Ratings Unit Collector to base voltage


    Original     		PDF 2SD0601A 2SD601A) 2SB0709A 2SB709A) transistor MAR 543 2SB709A 2SD0601A 2SD601A 2SB0709A

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2SD602A TRANSISTOR NPN SOT–23 FEATURES  Low Collector to Emitter Saturation Voltage  Mini Type Package 1. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)


    Original     		PDF OT-23 2SD602A 200MHz

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD0601A (2SD601A) Silicon NPN epitaxial planar type For general amplification Complementary to 2SB0709A (2SB709A) Unit: mm 0.40+0.10 –0.05 • Features 0.16+0.10 –0.06 0.4±0.2


    Original     		PDF 2002/95/EC) 2SD0601A 2SD601A) 2SB0709A 2SB709A)

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB0710 (2SB710), 2SB0710A (2SB710A) Silicon PNP epitaxial planar type For general amplification Complementary to 2SD0602 (2SD602), 2SD0602A (2SD602A) Unit: mm 0.40+0.10 –0.05 • Features


    Original     		PDF 2002/95/EC) 2SB0710 2SB710) 2SB0710A 2SB710A) 2SD0602 2SD602) 2SD0602A 2SD602A) 2SB0710

    MMBT2907ALT1

    Abstract: No abstract text available
    Text: 2SD602LT1 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR * Complement to MMBT2907ALT1 * Collector Dissipation: Pc max =225mW * Collector-Emitter Voltage :Vceo= 40V ABSOLUTE MAXIMUM RATINGS at Ta=25 Collector-Base Voltage Vcbo Rating Unit 75 1.


    Original     		PDF 2SD602LT1 MMBT2907ALT1 225mW 150mA 500mA 150mA 500mA 100MHz MMBT2907ALT1

    2SB0709A

    Abstract: 2SB709A 2SD0601A 2SD601A XP04601 XP4601
    Text: Composite Transistors XP04601 XP4601 Silicon NPN epitaxial planer transistor (Tr1) Silicon PNP epitaxial planer transistor (Tr2) Unit: mm For general amplification 0.65 1 6 2 5 3 4 +0.05 0 to 0.1 2SD0601A(2SD601A) + 2SB0709A(2SB709A) 0.12 –0.02 0.9±0.1


    Original     		PDF XP04601 XP4601) 2SD0601A 2SD601A) 2SB0709A 2SB709A) 2SB709A 2SD601A XP04601 XP4601

    2SD0601A

    Abstract: 2SD1328 2SD601A XN04505 XN4505
    Text: Composite Transistors XN04505 XN4505 NPN epitaxial planer transistor Unit: mm For general amplification (Tr1) For amplification of low frequency output (Tr2) +0.2 2.8 –0.3 +0.25 Tr1 Tr2 0.95 3 +0.1 +0.1 0.1 to 0.3 2SD0601A(2SD601A) + 2SD1328 0.4±0.2 1 : Collector (Tr1)


    Original     		PDF XN04505 XN4505) 2SD0601A 2SD601A) 2SD1328 2SD1328 2SD601A XN04505 XN4505

    5H MARKING

    Abstract: XP4501 2SD601A
    Text: Composite Transistors XP4501 Silicon NPN epitaxial planer transistor Unit: mm For general amplification 1 6 2 5 3 4 0 to 0.1 2SD601A x 2 elements 0.12 –0.02 0.9±0.1 ● 0.7±0.1 • Basic Part Number of Element +0.05 0.2 ● Two elements incorporated into one package.


    Original     		PDF XP4501 2SD601A 5H MARKING XP4501 2SD601A

    2SC3361-5

    Abstract: 2SC181SL-O BFR41 L 2 KT3102 TEC9014B LOW-POWER SILICON NPN 2S0637 KT620A KT3102A
    Text: LOW-POWER SILICON NPN Item Number Part Number 10 - 1S - 20 2S 30 2SD601A 2S0637 2SC2000K 2SC2603 2SC147S KT620A HSE4S4 MPS-A09 KT3102A 2N4966 ~~~~~~ JE9214A TEC9014B MPSA09 MPSA09 MPSA09 2SC117S 2SC876 2SC876 ~~~~~ 2S01490 250789 BFT31 2NS310 TE01402A BFX68


    Original     		PDF 2SD601A 2S0637 2SC2000K 2SC2603 2SC147S KT620A MPS-A09 KT3102A 2N4966 JE9214A 2SC3361-5 2SC181SL-O BFR41 L 2 KT3102 TEC9014B LOW-POWER SILICON NPN

    2SB0709A

    Abstract: 2SB709A 2SD0601A 2SD601A
    Text: Transistor 2SD0601A 2SD601A Silicon NPN epitaxial planer type For general amplification Complementary to 2SB0709A (2SB709A) Unit: mm +0.2 2.8 –0.3 Ratings Unit Collector to base voltage VCBO 60 V Collector to emitter voltage VCEO 50 V Emitter to base voltage


    Original     		PDF 2SD0601A 2SD601A) 2SB0709A 2SB709A) 2SB0709A 2SB709A 2SD0601A 2SD601A

    sot 23 transistor

    Abstract: No abstract text available
    Text: 2SB709A SOT-23 Transistor PNP 1. BASE 2. EMITTER 3. COLLECTOR SOT-23 Features — For general amplification — Complementary to 2SD601A MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -45 V VCEO Collector-Emitter Voltage


    Original     		PDF 2SB709A OT-23 OT-23 2SD601A -10mA 200MHz sot 23 transistor

    2SB709A

    Abstract: 2SD601A XP1B301
    Text: Composite Transistors XP1B301 Silicon PNP epitaxial planer transistor Tr1 Silicon NPN epitaxial planer transistor (Tr2) 2.1±0.1 0.65 1 2 1.25±0.1 0.425 5 3 4 +0.05 0.9± 0.1 2SB709A+2SD601A 0 to 0.1 ● 0.7±0.1 • Basic Part Number of Element ■ Absolute Maximum Ratings


    Original     		PDF XP1B301 2SB709A 2SD601A 2SD601A XP1B301

    2SD0601A

    Abstract: 2SD601A XP04501 XP4501
    Text: Composite Transistors XP04501 XP4501 Silicon NPN epitaxial planer transistor Unit: mm For general amplification 1 6 2 5 3 4 0 to 0.1 2SD0601A(2SD601A) x 2 elements 0.12 –0.02 0.9±0.1 ● 0.7±0.1 • Basic Part Number of Element +0.05 0.2 ● Two elements incorporated into one package.


    Original     		PDF XP04501 XP4501) 2SD0601A 2SD601A) 2SD601A XP04501 XP4501

    2SD0601A

    Abstract: 2SD601A XP06501 XP6501
    Text: Composite Transistors XP06501 XP6501 Silicon NPN epitaxial planer transistor Unit: mm For general amplification 1 6 2 5 3 4 0 to 0.1 2SD0601A(2SD601A) x 2 elements 0.12 –0.02 0.9±0.1 ● 0.7±0.1 • Basic Part Number of Element +0.05 0.2 ● Two elements incorporated into one package.


    Original     		PDF XP06501 XP6501) 2SD0601A 2SD601A) 2SD601A XP06501 XP6501

    2SB710A

    Abstract: No abstract text available
    Text: Transistor 2SB710, 2SB710A Silicon PNP epitaxial planer type For general amplification Complementary to 2SD602 and 2SD602A Unit: mm • Features Collector to 2SB710 emitter voltage 2SB710A –25 –50 VEBO –5 V Peak collector current ICP –1 A Collector current


    Original     		PDF 2SB710, 2SB710A 2SD602 2SD602A 2SB710 2SB710A 2SB710 2SB710) 2SB710A)

    2SB0709A

    Abstract: 2SB709A 2SD0601A 2SD601A XN05601 XN5601
    Text: Composite Transistors XN05601 XN5601 Silicon PNP epitaxial planer transistor (Tr1) Silicon NPN epitaxial planer transistor (Tr2) 3 2 0.30+0.10 –0.05 0.50+0.10 –0.05 • Basic Part Number of Element Parameter Tr2 1.1+0.2 –0.1 2SB0709A(2SB709A) + 2SD0601A(2SD601A)


    Original     		PDF XN05601 XN5601) 2SB0709A 2SB709A) 2SD0601A 2SD601A) 2SB709A 2SD601A XN05601 XN5601

    2SB0709A

    Abstract: 2SB709A 2SD0601A 2SD601A XN04601 XN4601
    Text: Composite Transistors XN04601 XN4601 Silicon NPN epitaxial planer transistor (Tr1) Silicon PNP epitaxial planer transistor (Tr2) 3 2 0.30+0.10 –0.05 0.50+0.10 –0.05 • Basic Part Number of Element Parameter 1.1+0.2 –0.1 2SD0601A(2SD601A) + 2SB0709A(2SB709A)


    Original     		PDF XN04601 XN4601) 2SD0601A 2SD601A) 2SB0709A 2SB709A) 2SB709A 2SD601A XN04601 XN4601

    Untitled

    Abstract: No abstract text available
    Text: Transistors IC SMD Type Product specification 2SD602 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 1 Mini type package, allowing downsizing of the equipment and 0.55 Low collector to emitter saturation voltage VCE sat .


    Original     		PDF 2SD602 OT-23

    2SD602

    Abstract: Silicon NPN Epitaxial Planar Type
    Text: Transistors IC SMD Type Silicon NPN Epitaxial Planar Type 2SD602 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 1 Mini type package, allowing downsizing of the equipment and 0.55 Low collector to emitter saturation voltage VCE sat .


    Original     		PDF 2SD602 OT-23 2SD602 Silicon NPN Epitaxial Planar Type

    2SC1565

    Abstract: 2sD1392 2SC3469 2SD1431 2SC495 2SC2824 2SD1388 2SD600 2SD1876 2SD1499
    Text: - M € T y p e No. tt it 2SD 1377K eh ft 2SD 1377 - 2SD 13 7 8 □— A 2SD 1 379 € Manuf. m h SANYO 2 TOSHIBA 2SC1212A 2SD549 2SD1520L/S 2SC2877 2SD 1381 - □ —A 2SD600 2SC2824 2SD 1382 — □ —A 2SD600 2SC2824 2SD 1383 s. □ —A □ —A 2SD1207


    OCR Scan     		PDF 2SD1196 2SD633 2SD1634 2SD2024 1377K 2SD1024 2SD600 2SC495 2SC1212A 2SD946 2SC1565 2sD1392 2SC3469 2SD1431 2SC495 2SC2824 2SD1388 2SD1876 2SD1499

    2SC783

    Abstract: 2SC2290 2SC3421 2SC1174 2SC1275 2SD1577 2SC1175 2sc 1177 2SC1167 2SC2329
    Text: % T ype No. tt B £ Manuf. SANYO TOSHIBA m NEC B ±L HITACHI Ä ± Ä F U JIT S U tö T MATSUSHITA h m M IT SU B IS H I □ — A ROHM * 2SC 1153 * 2SC 1154 ~ X * 2SC 1155 E. # 2SD600 2SC3421 2SD1378 * 2S0 1156 EL g 2SD6Ü0 2SC3421 2SD1378 * 2SC 1157 H 2SC3421


    OCR Scan     		PDF 2SD819 2SD600 2SC3421 2SD1378 2SD137S 2SD1563 2SC783 2SC2290 2SC3421 2SC1174 2SC1275 2SD1577 2SC1175 2sc 1177 2SC1167 2SC2329