2SD880, 1.5 POWER DISSIPATION Search Results

2SD880

Abstract: 2sD880 TRANSISTOR 2sd880 equivalent
Contextual Info: 2SD880 2SD880 TRANSISTOR NPN TO—220 FEATURES Power dissipation PCM: 1. BASE 2. COLLECTOR 3. EMITTER 1.5 W (Tamb=25℃) Collector current ICM: 3 A Collector-base voltage 60 V V(BR)CBO: Operating and storage junction temperature range 123 TJ, Tstg: -55℃ to +150℃

2SD880

Abstract: 2sd880 equivalent
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors 2SD880 TRANSISTOR NPN TO—220 1. BASE FEATURES Power dissipation PCM: 2. COLLECTOR 3. EMITTER 1.5 W (Tamb=25℃) Collector current 3 A ICM: Collector-base voltage

Contextual Info: TO-220 Plastic-Encapsulate Transistors 2SD880 TRANSISTOR NPN TO—220 1. BASE FEATURES Power dissipation PCM: 2. COLLECTOR 3. EMITTER 1.5 W (Tamb=25℃) Collector current 3 A ICM: Collector-base voltage 60 V V(BR)CBO: Operating and storage junction temperature range

Contextual Info: 2SD880 Plastic-Encapsulate Transistors NPN TO—220 Features Power dissipation PCM: 1.5 W Tamb=25℃ Collector current ICM: 3 A Collector-base voltage 60 V V(BR)CBO: Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ 1. BASE 2. COLLECTOR 3. EMITTER

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors 2SD880 TRANSISTOR（ NPN ） TO—220 FEATURES Power dissipation PCM : 1.5 W（Tamb=25℃） Collector current ICM : 3A Collector-base voltage V BR CBO : 60 V Operating and storage junction temperature range

2SD880

Contextual Info: Transys Electronics L I M I T E D TO-220 Plastic-Encapsulated Transistors 2SD880 TRANSISTOR NPN TO—220 1. BASE FEATURES Power dissipation PCM: 2. COLLECTOR 3. EMITTER 1.5 W (Tamb=25℃) Collector current 3 A ICM: Collector-base voltage 60 V V(BR)CBO: Operating and storage junction temperature range

2sd880

Abstract: 2SD880L utc 2SD880L 2SD880, 1.5 power dissipation transistor 2sd880 013 transistor
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SD880 NPN SILICON TRANSISTOR NPN EPITAXIAL TRANSISTOR „ DESCRIPTION The UTC 2SD880 is designed for audio frequency power amplifier applications. „ FEATURES * High DC Current Gain: hFE=200 Max. (VCE=5V, IC=0.5A) * Low Saturation Voltage: VCE(SAT)=1.0V(Max.)(IC=3A, IB=0.3A)

Contextual Info: UNISONICTECHNOLOGIESCO., LTD 2SD880 NPN SILICON TRANSISTOR N PN EPI T AX I AL T RAN SI ST OR ̈ DESCRI PT I ON The UTC 2SD880 is designed for audio frequency power amplifier applications. ̈ FEAT U RES * High DC Current Gain: hFE=200 Max. (VCE=5V, IC=0.5A)

2SD880

Abstract: 2sD880 TRANSISTOR 2SD880L
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SD880 NPN SILICON TRANSISTOR NPN EPITAXIAL TRANSISTOR  DESCRIPTION The UTC 2SD880 is designed for audio frequency power amplifier applications.  FEATURES * High DC Current Gain: hFE=200 Max. (VCE=5V, IC=0.5A) * Low Saturation Voltage: VCE(SAT)=1.0V(Max.)(IC=3A, IB=0.3A)

2SD880

Abstract: R897
Contextual Info: 2SD880 SILICON NPN TRIPLE DIFFUSED TYPE AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS. FEATURES Unit in mm : . High DC Current Gain : h F E _3°0 Max. (Vc E “5V, Ic”0.5A) . Low Saturation Voltage : VC E (s a t )-1.0V(Max.)(IC“3A, IB=0.3A) . High Power Dissipation

Contextual Info: UTC 2SD880 NPN EPITAXIAL PLANAR TRANSISTOR NPN EPITAXIAL TRANSISTOR DESCRIPTION The UTC 2SD880 is designed for audio frequency power amplifier applications. FEATURE *High DC Current Gain: hFE=300 Max. (VCE=5V,IC=0.5A) *Low Saturation Voltage: VCE(sat)=1.0V(Max.)(IC=3A,IB=0.3A)

2SD880L

Abstract: 2sd880 equivalent utc 2SD880L QW-R203-013 2SB834 2SD880 power transistor audio amplifier 500 watts
Contextual Info: UTC 2SD880 NPN EPITAXIAL PLANAR TRANSISTOR NPN EPITAXIAL TRANSISTOR DESCRIPTION The UTC 2SD880 is designed for audio frequency power amplifier applications. FEATURE *High DC Current Gain: hFE=300 Max. (VCE=5V,IC=0.5A) *Low Saturation Voltage: VCE(sat)=1.0V(Max.)(IC=3A,IB=0.3A)

2SD880

Contextual Info: 2SD880 NPN Silicon Epitaxial Power Transistor P b Lead Pb -Free COLLECTOR 2 FEATURES: 1 BASE 1 * Low frequency power amplifier * Complement to 2SB834 2 3 1. BASE 2. COLLECTOR 3. EMITTER 3 EMITTER TO-220 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol

2sd880 equivalent

Abstract: 2SD880, 1.5 power dissipation 2SB834 2SD880 2sD880 TRANSISTOR
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors 2SD880 TRANSISTOR NPN TO-220 FEATURES z Low frequency power amplifier z Complement to 2SB834 1. BASE 2. COLLECTOR 3. EMITTER 123 MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

2sD880 TO-220

Contextual Info: 2SD880 NPN TO-220 Transistor TO-220 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 Features — — Low frequency power amplifier Complement to 2SB834 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO

2SD880

Contextual Info: SILICON NPN TRIPLE DIFFUSED TYPE 2SD880 AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS. Unit in mm FEATURES : . High DC Current Gain : b p E = 3 0 0 M a x . (VCE=5V, IC=0.5A) 10.3M A X ¡z ¡5 6 ± 0 .a . Low Saturation Voltage : VCE(sat)=1.0V(Max.)(IC=3A, IB=0.3A)

2SB834

Contextual Info: SILICON PNP TRIPLE DIFFUSED TYPE 2SB834 AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS. FEATURES: • Low Collector Saturation Voltage : VcE sat =-l-OV(Max.) at Ic=-3A, Ib =-0.3A . Collector Power Dissipation : PC=30W (Tc=25°C) . Complementary to 2SD880. MAXIMUM RATINGS (Ta=25°C)

2SD880

Abstract: 2SB834 2SD880, 1.5 power dissipation 2s0880 AC75 2SD880 TOSHIBA 2SB834 TOSHIBA
Contextual Info: TOSHIBA {DISCRETE/OPTO! ~SÍ H 90 97250 TO SHI BA DE I H H ÌDT7SSG H H tJöC 07 84-4- <DI SC RE TE/OPTO □□07Ö44 H H H L) 7<- 3 3 ^ 0 ? 2SD880 SIL IC O N NPN T R IP L E D IF F U SE D TYPE_ AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS. Unit in mm

2SB834 TOSHIBA

Contextual Info: -2SB834 SILICON PNP TRIPLE DIFFUSED TYPE PCT PROCESS A U D IO FR EQ U EN C Y PO W ER A M PLIFIER APPLIC ATIO N S. Unit in mm 0 3 .6 ÍQ .Z • Low Collector Saturation Voltage : v CE(sat)= —1-OV(Max.)at I c = -3 A , ¡3 = -0.3A Collector Power Dissipation

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors 2SD880 TRANSISTOR NPN TO-220 FEATURES z Low Frequency Power Amplifier z Complement to 2SB834 1. BASE 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

2sD880 TRANSISTOR

Contextual Info: MCC
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components 2SD880 Features • • NPN Silicon Power Transistors With TO-220 package Power amplifier applications Maximum Ratings

2SB834

Abstract: 2SD880
Contextual Info: SavantIC Semiconductor Product Specification 2SB834 Silicon PNP Power Transistors DESCRIPTION •With TO-220 package ·Low collector saturation voltage ·Complement to type 2SD880 APPLICATIONS ·Audio frequency power amplifier PINNING PIN DESCRIPTION 1 Emitter

2SB834

Abstract: 2SD880
Contextual Info: JMnic Product Specification 2SB834 Silicon PNP Power Transistors DESCRIPTION ・With TO-220 package ・Low collector saturation voltage ・Complement to type 2SD880 APPLICATIONS ・Audio frequency power amplifier PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to

2sb834 transistor

Contextual Info: 2SB834 PNP TO-220 Transistor TO-220 1. BASE 2. COLLECTOR 1 Features 2 3. EMITTER 3 — Low Collector -emitter saturation voltage VCE(sat)=1.0v(Max)@ IC=-3A,IB=-0.3A — DC current Gain hFE =60-200@ IC=0.5A — Complementary to NPN 2SD880 MAXIMUM RATINGS (TA=25℃ unless otherwise noted)