2SD880Y
Abstract: 2sD880 TRANSISTOR 2SD880 2SD880-G
Text: MCC 2SD880 2SD880-Q 2SD880-Y 2SD880-GR omponents 20736 Marilla Street Chatsworth !"# $ % !"# TM Micro Commercial Components Features • • With TO-220 package Power amplifier applications x Case Material: Molded Plastic.
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2SD880
2SD880-Q
2SD880-Y
2SD880-GR
O-220
O-220
2SD880Y
2sD880 TRANSISTOR
2SD880-G
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UTC2SD880
Abstract: 2sd880 equivalent 2SB834 2SD880 QW-R203-013
Text: UTC 2SD880 NPN EPITAXIAL PLANAR TRANSISTOR NPN EPITAXIAL TRANSISTOR DESCRIPTION The UTC 2SD880 is designed for audio frequency power amplifier applications. FEATURE *High DC Current Gain: hFE=300 Max. (VCE=5V,IC=0.5A) *Low Saturation Voltage: VCE(sat)=1.0V(Max.)(IC=3A,IB=0.3A)
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2SD880
2SD880
2SB834
O-220
300mA
500mA
500mA,
QW-R203-013
UTC2SD880
2sd880 equivalent
2SB834
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2sd880y
Abstract: No abstract text available
Text: MCC TM Micro Commercial Components 2SD880 2SD880-Q 2SD880-Y 2SD880-GR omponents 20736 Marilla Street Chatsworth !"# $ % !"# Features • • • Lead Free Finish/RoHS Compliant Note 1 ("P" Suffix designates
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2SD880
2SD880-Q
2SD880-Y
2SD880-GR
O-220
2sd880y
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Untitled
Abstract: No abstract text available
Text: UTC 2SD880 NPN EPITAXIAL PLANAR TRANSISTOR NPN EPITAXIAL TRANSISTOR DESCRIPTION The UTC 2SD880 is designed for audio frequency power amplifier applications. FEATURE *High DC Current Gain: hFE=300 Max. (VCE=5V,IC=0.5A) *Low Saturation Voltage: VCE(sat)=1.0V(Max.)(IC=3A,IB=0.3A)
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2SD880
2SD880
2SB834
O-220
QW-R203-013
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Untitled
Abstract: No abstract text available
Text: UTC 2SD880 NPN EPITAXIAL PLANAR TRANSISTOR NPN EPITAXIAL TRANSISTOR DESCRIPTION The UTC 2SD880 is designed for audio frequency power amplifier applications. FEATURE *High DC Current Gain: hFE=300 Max. (VCE=5V,IC=0.5A) *Low Saturation Voltage: VCE(sat)=1.0V(Max.)(IC=3A,IB=0.3A)
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2SD880
2SD880
2SB834
O-220
QW-R203-013
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2SD880L
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 2SD880 NPN SILICON TRANSISTOR NPN EPITAXIAL TRANSISTOR DESCRIPTION The UTC 2SD880 is designed for audio frequency power amplifier applications. FEATURES * High DC Current Gain: hFE=200 Max. (VCE=5V, IC=0.5A) * Low Saturation Voltage: VCE(SAT)=1.0V(Max.)(IC=3A, IB=0.3A)
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2SD880
2SD880
2SB834
2SD880L-TA3-T
2SD880G-TA3-T
O-220
QW-R203-013
2SD880L
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2SD880L
Abstract: 2SD880 2sd880 equivalent 2sd880 datasheet 013 transistor 2SB834 QW-R203-013 transistor 2sd880 hfe-300 utc 2SD880L
Text: UNISONIC TECHNOLOGIES CO., LTD 2SD880 NPN SILICON TRANSISTOR NPN EPITAXIAL TRANSISTOR DESCRIPTION The UTC 2SD880 is designed for audio frequency power amplifier applications. FEATURES * High DC Current Gain: hFE=300 Max. (VCE=5V, IC=0.5A) * Low Saturation Voltage: VCE(SAT)=1.0V(Max.)(IC=3A, IB=0.3A)
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2SD880
2SD880
2SB834
2SD880L-TA3-T
2SD880G-TA3-T
O-220
QW-R203-013
2SD880L
2sd880 equivalent
2sd880 datasheet
013 transistor
2SB834
transistor 2sd880
hfe-300
utc 2SD880L
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Untitled
Abstract: No abstract text available
Text: UTC 2SD880 NPN EPITAXIAL PLANAR TRANSISTOR NPN EPITAXIAL TRANSISTOR DESCRIPTION The UTC 2SD880 is designed for audio frequency power amplifier applications. FEATURE *High DC Current Gain: hFE=300 Max. (VCE=5V,IC=0.5A) *Low Saturation Voltage: VCE(sat)=1.0V(Max.)(IC=3A,IB=0.3A)
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2SD880
2SD880
2SB834
O-220
300mA
500mA
500mA,
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2SD880L
Abstract: 2sd880 equivalent utc 2SD880L QW-R203-013 2SB834 2SD880 power transistor audio amplifier 500 watts
Text: UTC 2SD880 NPN EPITAXIAL PLANAR TRANSISTOR NPN EPITAXIAL TRANSISTOR DESCRIPTION The UTC 2SD880 is designed for audio frequency power amplifier applications. FEATURE *High DC Current Gain: hFE=300 Max. (VCE=5V,IC=0.5A) *Low Saturation Voltage: VCE(sat)=1.0V(Max.)(IC=3A,IB=0.3A)
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2SD880
2SD880
2SB834
O-220
2SD880L
QW-R203-013
2SD880L
2sd880 equivalent
utc 2SD880L
2SB834
power transistor audio amplifier 500 watts
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2sd880
Abstract: 2SD880L utc 2SD880L 2SD880, 1.5 power dissipation transistor 2sd880 013 transistor
Text: UNISONIC TECHNOLOGIES CO., LTD 2SD880 NPN SILICON TRANSISTOR NPN EPITAXIAL TRANSISTOR DESCRIPTION The UTC 2SD880 is designed for audio frequency power amplifier applications. FEATURES * High DC Current Gain: hFE=200 Max. (VCE=5V, IC=0.5A) * Low Saturation Voltage: VCE(SAT)=1.0V(Max.)(IC=3A, IB=0.3A)
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2SD880
2SD880
2SB834
2SD880L-TA3-T
2SD880G-TA3-T
O-220
QW-R203-013
2SD880L
utc 2SD880L
2SD880, 1.5 power dissipation
transistor 2sd880
013 transistor
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Untitled
Abstract: No abstract text available
Text: UNISONICTECHNOLOGIESCO., LTD 2SD880 NPN SILICON TRANSISTOR N PN EPI T AX I AL T RAN SI ST OR ̈ DESCRI PT I ON The UTC 2SD880 is designed for audio frequency power amplifier applications. ̈ FEAT U RES * High DC Current Gain: hFE=200 Max. (VCE=5V, IC=0.5A)
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2SD880
2SD880
2SB834
2SD880L-TA3-T
2SD880G-TA3-T
O-220
QW-R203-013
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2SD880
Abstract: 2sD880 TRANSISTOR 2SD880L
Text: UNISONIC TECHNOLOGIES CO., LTD 2SD880 NPN SILICON TRANSISTOR NPN EPITAXIAL TRANSISTOR DESCRIPTION The UTC 2SD880 is designed for audio frequency power amplifier applications. FEATURES * High DC Current Gain: hFE=200 Max. (VCE=5V, IC=0.5A) * Low Saturation Voltage: VCE(SAT)=1.0V(Max.)(IC=3A, IB=0.3A)
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2SD880
2SD880
2SB834
2SD880G-AB3-R
2SD880L-TA3-T
2SD880G-TA3-T
OT-89
O-220
2sD880 TRANSISTOR
2SD880L
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2SD880
Abstract: 2sD880 TRANSISTOR 2sd880 equivalent
Text: 2SD880 2SD880 TRANSISTOR NPN TO—220 FEATURES Power dissipation PCM: 1. BASE 2. COLLECTOR 3. EMITTER 1.5 W (Tamb=25℃) Collector current ICM: 3 A Collector-base voltage 60 V V(BR)CBO: Operating and storage junction temperature range 123 TJ, Tstg: -55℃ to +150℃
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2SD880
O--220
500mA
300mA
2SD880
2sD880 TRANSISTOR
2sd880 equivalent
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Untitled
Abstract: No abstract text available
Text: MCC TM Micro Commercial Components 2SD880-Q 2SD880-Y 2SD880-GR omponents 20736 Marilla Street Chatsworth !"# $ % !"# Features • • • • • Halogen free available upon request by adding suffix "-HF"
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2SD880-Q
2SD880-Y
2SD880-GR
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2SD880Y
Abstract: SILICON TRANSISTOR CORP 2SD880-Y 2sd880gr
Text: MCC TM Micro Commercial Components 2SD880-Q 2SD880-Y 2SD880-GR omponents 20736 Marilla Street Chatsworth !"# $ % !"# Features • • • • Lead Free Finish/RoHS Compliant Note 1 ("P" Suffix designates
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2SD880-Q
2SD880-Y
2SD880-GR
O-220
2SD880Y
SILICON TRANSISTOR CORP
2sd880gr
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2sd880y
Abstract: 100-200Q
Text: MCC TM Micro Commercial Components 2SD880-Q 2SD880-Y 2SD880-GR omponents 20736 Marilla Street Chatsworth !"# $ % !"# Features • • • • Lead Free Finish/RoHS Compliant Note 1 ("P" Suffix designates
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2SD880-Q
2SD880-Y
2SD880-GR
2sd880y
100-200Q
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2SD880Y
Abstract: No abstract text available
Text: MCC TM Micro Commercial Components Features • • • • • 2SD880-Q 2SD880-Y 2SD880-GR omponents 20736 Marilla Street Chatsworth !"# $ % !"# Halogen free available upon request by adding suffix "-HF"
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2SD880-Q
2SD880-Y
2SD880-GR
2SD880Y
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2sd880 equivalent
Abstract: 2SD880 2sd880 datasheet 2SB834
Text: Inchange Semiconductor Product Specification 2SD880 Silicon NPN Power Transistors • DESCRIPTION ·With TO-220C package ·Complement to type 2SB834 ·Low collector saturation voltage APPLICATIONS ·Designed for use in audio frequency power amplifier applications
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2SD880
O-220C
2SB834
10IB1
-10IB2
2sd880 equivalent
2SD880
2sd880 datasheet
2SB834
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2SB834
Abstract: 2SD880
Text: SavantIC Semiconductor Product Specification 2SB834 Silicon PNP Power Transistors DESCRIPTION •With TO-220 package ·Low collector saturation voltage ·Complement to type 2SD880 APPLICATIONS ·Audio frequency power amplifier PINNING PIN DESCRIPTION 1 Emitter
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2SB834
O-220
2SD880
2SB834
2SD880
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2SD880
Abstract: 2sd880 equivalent 2SB834 416W
Text: SavantIC Semiconductor Product Specification 2SD880 Silicon NPN Power Transistors DESCRIPTION •With TO-220C package ·Complement to type 2SB834 ·Low collector saturation voltage APPLICATIONS ·Designed for use in audio frequency power amplifier applications
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2SD880
O-220C
2SB834
10IB1
-10IB2
2SD880
2sd880 equivalent
2SB834
416W
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2SB834
Abstract: 2sb834 equivalent 2sd880 equivalent 2SD880
Text: Inchange Semiconductor Product Specification 2SB834 Silicon PNP Power Transistors DESCRIPTION ・With TO-220 package ・Low collector saturation voltage ・Complement to type 2SD880 APPLICATIONS ・Audio frequency power amplifier PINNING PIN DESCRIPTION 1
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2SB834
O-220
2SD880
2SB834
2sb834 equivalent
2sd880 equivalent
2SD880
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2sd880 equivalent
Abstract: 2SD880, 1.5 power dissipation 2SD880 2sD880 TRANSISTOR
Text: DC COMPONENTS CO., LTD. 2SD880 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for low frequency power amplifier applications. TO-220AB Pinning 1 = Base 2 = Collector 3 = Emitter .405 10.28 .380(9.66)
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2SD880
O-220AB
2sd880 equivalent
2SD880, 1.5 power dissipation
2SD880
2sD880 TRANSISTOR
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2SB834
Abstract: 2SD880 2sb834 transistor
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB834 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -60V(Min) ·Low Collector-Emitter Saturation Voltage: VCE(sat)= -1.0V(Max) @IC= -3.0A ·Complement to Type 2SD880
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2SB834
2SD880
-500mA;
2SB834
2SD880
2sb834 transistor
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Untitled
Abstract: No abstract text available
Text: 2SB834 SEMICONDUCTOR FORWARD INTERNATIONAL ELECTRONICS L ID . TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER *Compkmntaryto 2SD880 ABSOLUTE MAXIMUM RATINGS a t T airfW fV Characteristic Symbol Rating Vcbo Collector-Base Voltaae
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2SB834
2SD880
-50mA
-500mA
-300mA
-10VIe
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