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    Panasonic Electronic Components 2SK01980RL

    JFET N-CH 20MA MINI3-G1
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    2SK0198 Datasheets (12)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SK0198 Panasonic TRANS JFET N-CH 30V 12A 3MINI3-G1 Original PDF
    2SK0198 Panasonic FETs, IPD, IGBTs, GaAs MMICs Original PDF
    2SK0198 Panasonic For Low-Frequency Amplification Original PDF
    2SK0198 Panasonic Silicon N-Channel Junction FET Original PDF
    2SK0198 Panasonic N-Channel Junction FET Original PDF
    2SK01980RL Panasonic JFETs (Junction Field Effect), Discrete Semiconductor Products, JFET N-CH 20MA 150MW MINI-3 Original PDF
    2SK0198P Panasonic TRANS JFET N-CH 30V 3A 3MINI3-G1 Original PDF
    2SK0198P Panasonic Silicon N-Channel Junction FET Original PDF
    2SK0198Q Panasonic TRANS JFET N-CH 30V 6A 3MINI3-G1 Original PDF
    2SK0198Q Panasonic Silicon N-Channel Junction FET Original PDF
    2SK0198R Panasonic TRANS JFET N-CH 30V 12A 3MINI3-G1 Original PDF
    2SK0198R Panasonic Silicon N-Channel Junction FET Original PDF

    2SK0198 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SK0198

    Abstract: 2SK198
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK0198 (2SK198) Silicon N-channel junction FET For low-frequency amplification • Package • High mutual conductance gm • Low-noise characteristics • Mini type package, allowing downsizing of the sets and automatic


    Original     		PDF 2002/95/EC) 2SK0198 2SK198) 2SK0198 2SK198

    Untitled

    Abstract: No abstract text available
    Text: Silicon Junction FETs Small Signal 2SK0198 (2SK198) Silicon N-Channel Junction FET For low-frequency amplification unit: mm 0.40+0.10 –0.05 • Features 0.16+0.10 –0.06 0.4±0.2 5° 1.50+0.25 –0.05 2.8+0.2 –0.3 3 ● High mutual conductance gm ● Low noise type


    Original     		PDF 2SK0198 2SK198)

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK0198 (2SK198) Silicon N-channel junction FET Unit: mm For low-frequency amplification 0.40+0.10 –0.05 0.16+0.10 –0.06 1.9±0.1 Unit VDS 30 V VDGO 30


    Original     		PDF 2002/95/EC) 2SK0198 2SK198)

    2SK0198

    Abstract: 2SK198
    Text: Silicon Junction FETs Small Signal 2SK0198 (2SK198) Silicon N-Channel Junction FET For low-frequency amplification unit: mm +0.2 2.8 –0.3 • Features +0.25 0.65±0.15 1.45 0.95 1 3 +0.1 0.4 –0.05 1.9±0.2 1.5 –0.05 0.95 +0.2 ● High mutual conductance gm


    Original     		PDF 2SK0198 2SK198) 2SK0198 2SK198

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK0198 (2SK198) Silicon N-channel junction FET For low-frequency amplification • Package • High mutual conductance gm • Low-noise characteristics • Mini type package, allowing downsizing of the sets and automatic


    Original     		PDF 2002/95/EC) 2SK0198 2SK198)

    2SK0198

    Abstract: 2SK198
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK0198 (2SK198) Silicon N-channel junction FET For low-frequency amplification • Package • High mutual conductance gm • Low-noise characteristics • Mini type package, allowing downsizing of the sets and automatic


    Original     		PDF 2002/95/EC) 2SK0198 2SK198) 2SK0198 2SK198

    2SK0198

    Abstract: 2SK198
    Text: Silicon Junction FETs Small Signal 2SK0198 (2SK198) Silicon N-Channel Junction FET For low-frequency amplification Unit: mm 0.40+0.10 –0.05 • Features 0.16+0.10 –0.06 0.4±0.2 5˚ 1.50+0.25 –0.05 2.8+0.2 –0.3 3 ● High mutual conductance gm ● Low noise type


    Original     		PDF 2SK0198 2SK198) 2SK0198 2SK198

    2SK0198

    Abstract: 2SK198
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK0198 (2SK198) Silicon N-channel junction FET For low-frequency amplification • Features ■ Package • High mutual conductance gm • Low-noise characteristics


    Original     		PDF 2002/95/EC) 2SK0198 2SK198) 2SK0198 2SK198

    2SK0198

    Abstract: 2SK198 XN01871 XN1871 FET MARKING
    Text: Composite Transistors XN01871 XN1871 Silicon N-channel junction FET Unit: mm For amplification of the low frequency +0.2 2.8 -0.3 +0.25 0.65±0.15 1.45±0.1 3 0.65±0.15 1 2 0 to 0.1 2SK0198(2SK198) x 2 elements +0.1 +0.2 1.1 -0.1 ● 0.8 • Basic Part Number of Element


    Original     		PDF XN01871 XN1871) 2SK0198 2SK198) 2SK198 XN01871 XN1871 FET MARKING

    2SK0198

    Abstract: 2SK198
    Text: Silicon Junction FETs Small Signal 2SK0198 (2SK198) Silicon N-channel junction FET Unit: mm For low-frequency amplification 0.40+0.10 –0.05 0.16+0.10 –0.06 1.9±0.1 Unit VDS 30 V VDGO 30 V Drain current ID 20 mA Gate current IG 10 mA Power dissipation


    Original     		PDF 2SK0198 2SK198) 2SK0198 2SK198

    2SK0198

    Abstract: 2SK198
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK0198 (2SK198) Silicon N-channel junction FET M Di ain sc te on na tin nc ue e/ d For low-frequency amplification • Package • High mutual conductance gm


    Original     		PDF 2002/95/EC) 2SK0198 2SK198) 2SK0198 2SK198

    MIP2F3

    Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
    Text: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the


    Original     		PDF PAMP13-N1 MIP2F3 MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent

    ma3df25

    Abstract: 2PG011 DD5X062J dg3d501 DSKTJ04 DA3DF50 DB2U308 SSMini2-F5-B DSK3J02 DSC3F01
    Text: 2009 Discrete Semiconductors New Products Line-up Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


    Original     		PDF respons39 O-220D-A1 MA26P02 MAZ3082J 2SC5779 MA26P07 MAZ3091 2SC5829 MA27E020G ma3df25 2PG011 DD5X062J dg3d501 DSKTJ04 DA3DF50 DB2U308 SSMini2-F5-B DSK3J02 DSC3F01

    2sc5929

    Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
    Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


    Original     		PDF responsibiliXP08081 XP08546 XP0A554 XP0D873 XP0D874 XP0D875 XP0E554 2sc5929 MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE

    2SK3585

    Abstract: Infrared-Sensor 2SK3578 2SK3584 2sk0301 2SK3583 PUB4701 2SK1104 2SK1860 2SK3585 equivalent
    Text: FETs, IPD, IGBTs, GaAs MMICs • Power Transistor Arrays F-MOS FETs Application Part No. Non-contact solenoid drive. Motor drive. Control equipment switching equipment. ✽: Ta=25 °C PUB4753 (PU7457) PUB4701 PUB4702 Absolute Maximum Ratings (TC = 25 °C)


    Original     		PDF PUB4753 PU7457) PUB4701 PUB4702 450/600o 380/680o SIP10-A1 2SK0301 2SK663) 2SK301) 2SK3585 Infrared-Sensor 2SK3578 2SK3584 2SK3583 PUB4701 2SK1104 2SK1860 2SK3585 equivalent

    2SC5936

    Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
    Text: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


    Original     		PDF XP06501T XP06531 XP06545 XP0A554 XP0D873 XP0D874 XP0D875 2SC5936 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928

    2SK0198

    Abstract: 2SK198 XN01871 XN1871
    Text: Composite Transistors XN01871 XN1871 Silicon n-channel junction FET Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 0.16+0.10 –0.06 M Di ain sc te on na tin nc ue e/ d 5 1 0.30+0.10 –0.05 (0.65) 2 1.1+0.2 –0.1 Parameter Drain-source voltage Gate-drain voltage (Source open)


    Original     		PDF XN01871 XN1871) 2SK0198 2SK198 XN01871 XN1871

    Untitled

    Abstract: No abstract text available
    Text: Composite Transistors XN01871 XN1871 Silicon n-channel junction FET Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 4 5 1.50+0.25 –0.05 3 2 1 (0.65) 0.30+0.10 –0.05 • Basic Part Number 5˚ M Di ain sc te on na tin nc ue e/ d • Two elements incorporated into one package


    Original     		PDF XN01871 XN1871)

    220v AC voltage stabilizer schematic diagram

    Abstract: LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 AD9272 Analog Front End, iMEMS Accelerometers & Gyroscopes . . . . . . 782, 2583 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-528 Acceleration and Pressure Sensors . . . . . . . . . . . . . . . . . . . . . . . . . . Page 2585


    Original     		PDF AD9272 P462-ND LNG295LFCP2U P463-ND LNG395MFTP5U 220v AC voltage stabilizer schematic diagram LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx

    mip411

    Abstract: MIP2F4 MIP2F3 AN12947a mip2f2 MIP2F20MS MIP2F40MS mip2e7dmy panasonic inverter dv 700 manual mip291
    Text: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the


    Original     		PDF PAMP13-N1 mip411 MIP2F4 MIP2F3 AN12947a mip2f2 MIP2F20MS MIP2F40MS mip2e7dmy panasonic inverter dv 700 manual mip291

    2SK0198

    Abstract: 2SK198 XN01871 XN1871
    Text: Composite Transistors XN01871 XN1871 Silicon n-channel junction FET Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 5 • Two elements incorporated into one package (Source-coupled FETs) • Reduction of the mounting area and assembly cost by one half


    Original     		PDF XN01871 XN1871) 2SK0198 2SK198 XN01871 XN1871

    2SK0198

    Abstract: 2SK198 XN01871 XN1871
    Text: Composite Transistors XN01871 XN1871 Silicon N-channel junction FET Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) ● 5 2 2.8+0.2 –0.3 4 1.50+0.25 –0.05 3 Two elements incorporated into one package. (Soure-coupled FETs) Reduction of the mounting area and assembly cost by one half.


    Original     		PDF XN01871 XN1871) 2SK0198 2SK198) 2SK198 XN01871 XN1871