2SK13 Search Results

Contextual Info: TO SHIBA 2SK1359 Field Effect Transistor U nit in m m Silicon N Channel MOS Type tc-MOS 11.5 15.9MAX High Speed, High Current DC-DC Converter, 032±O2 & Relay Drive and Motor Drive Applications Features • Low Drain-Source ON Resistance cJ " Rds(ON) = 3-OQ (Typ.)

2SK1357

Abstract: 2Sk1357 transistor
Contextual Info: 2SK1357 FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE jt-MOS h -5 INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED,HIGH CURRENT SWITCHING APPLICATIONS. 1 5.9 MAX. *3.2±0 2 FEATURES: • Low Drain-Source ON Resistance : RDS(0N)=2.5Q (Typ.) •High Forward Transfer Admittance : I Y f s ! = 2. 0S( Typ. )

800v nmos

Contextual Info: TOSHIBA 2SK1365 Field Effect Transistor Unit in mm Silicon N Channel MOS Type n-MOS 11.5 High Speed, High Current Switching Applications Features • Low Drain-Source ON Resistance - Rds(on ) = 1 (Typ.) • High Forward Transfer Admittance - Yfs' = 4. OS (Typ.)

2SK1380

Contextual Info: FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2-7r-MOSm 2SK1380 H I GH S P E E D , H I G H CURRENT SWI TCHING A P P L I C A T I O N S . INDUSTRIAL APPLICATIONS R E L A Y D R I V E , M O T O R D RI VE AND DC-DC C ONV ER T ER A P P L I C A T I O N S .

Contextual Info: TOSHIBA 2SK1382 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2-7r-MOSIII 2 S K 1 382 HIGH SPEED SWITCHING APPLICATIONS RELAY DRIVE, MOTOR DRIVE AND DC-DC CONVERTER APPLICATIONS • • • • • INDUSTRIAL APPLICATIONS Unit in mm 4V Gate Drive

2SK1377

Abstract: 10R1B
Contextual Info: 2SK1377 FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS T Y P E tt-MOS INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS. SWITCHING REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS. 1Û3MAX. 0 1 2 ± d 2 /- FEATURES:

2SK1346

Contextual Info: FIELD EFFECT TRANSISTOR 2SK1346 SILICON N CHANNEL MOS TYPE tt-MOSH INDUSTRIAL APPLICATIONS HIGH SPEED,HIGH CURRENT SWITCHING APPL1CAÍI0NS. Unit in ma CHOPPER REGULATOR,DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS. FEATURES: • Low Drain-Source ON Resistance :

2SK1333

Contextual Info: FIELD EFFECT TRANSISTO R 2SK1333 SILICON N CHANNEL MOS TYPE w-MOSii HIGH SPEED, HIGH POWER SWITCHING APPLICATIONS. MOTOR DRIVER, OC-DC CONVERTER ANS SWITCHING REGURATOR APPLICATIONS. • Low Drain-Source ON Resistance : RDS(ON)=0,i,n (Max.) ID=15A • With Built-in Free Wheeling Diode:

2SK1362

Abstract: ifr 220
Contextual Info: TOSHIBA Discrete Semiconductors 2SK1362 Field Effect Transistor Silicon N Channel MOSType rc-MOS II High Speed, High Current Switching Applications Features • High Breakdown Voltage ' V (BR)DSS - 9 0 0 V • High Forward Transfer Admittance - |Yfsl= 1.7S(Typ.)

Contextual Info: 2SK1336 Silicon N Channel MOS FET REJ03G0933-0200 Previous: ADE-208-1273 Rev.2.00 Sep 07, 2005 Application High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device  Can be driven from 5 V source

2SK1385-01

Abstract: n mosfet 1400 v
Contextual Info: 2SK1385-01 SIPMOS FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET F A P - I I S E R I E S lOutline Drawings • Features • High speed sw itching • Lo w on-resistance • No second ary breakdow n • Lo w driving p o w er • High voltage • V GSs = ± 3 0 V G uarantee

2SK1331

Contextual Info: P o w er F-MOS FET 2SK1331 2SK1331 Silicon N-Channel Power F-M O S FET Package Dimensions • Features • Low R r d <o„ = 0 .3 8 ii typ.) Unit: mm 5.2max. . 15.5max. 6.9min. • High speed sw itching t f= 100ns (typ.) • Secondary breakdow n free 3.2

k1365

Abstract: 2SK1365
Contextual Info: 2SK1365 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSII.5 2SK1365 Switching Power Supply Applications Unit: mm z Low drain−source ON resistance : RDS (ON) = 1.5 Ω (typ.) z High forward transfer admittance : |Yfs| = 4.0 S (typ.)

k1359

Abstract: K135 2SK1359
Contextual Info: 2SK1359 .5 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSII 2SK1359 DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 3.0 Ω (typ.) z High forward transfer admittance : |Yfs| = 2.0 S (typ.)

2SK1303

Contextual Info: 2SK1303 Silicon N-Channel MOS FET Application TO–3P High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device – Can be driven from 5 V source • Suitable for motor drive, DC-DC converter,

2SK1307

Abstract: 2SK1302
Contextual Info: 2SK1307 Silicon N-Channel MOS FET Application TO–220FM High speed power switching Features • Low on-resistance • High speed switching • 4 V gate drive device – Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive

ECG 1277

Abstract: 2SK1340 DSA003639
Contextual Info: 2SK1340 Silicon N-Channel MOS FET ADE-208-1277 Z 1st. Edition Mar. 2001 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter

2SK1317

Abstract: DSA003638
Contextual Info: 2SK1317 Silicon N-Channel MOS FET ADE-208-1268 Z 1st. Edition Mar. 2001 Application High speed power switching Features • • • • • High breakdown voltage V DSS = 1500 V High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter and motor driver

2SK1304

Abstract: DSA003638 RA1010
Contextual Info: 2SK1304 Silicon N-Channel MOS FET ADE-208-1262 Z 1st. Edition Mar. 2001 Application High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device  Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive

2SK1341

Abstract: DSA003639
Contextual Info: 2SK1341 Silicon N-Channel MOS FET ADE-208-1278 Z 1st. Edition Mar. 2001 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter

Contextual Info: 2SK1334 Silicon N-Channel MOS FET HITACHI Nov. 1 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary Breakdown • Suitable for switching regulator and DC-DC converter Outline

Contextual Info: 2SK1335 L , 2SK1335(S) Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter

K1302

Contextual Info: 2SK1302 Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • 4 V gate drive device — Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive

Contextual Info: 2SK1336 Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device — Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive