Hitachi DSA00279
Abstract: No abstract text available
Text: 2SK1300 Silicon N-Channel MOS FET Application High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive
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2SK1300
O-220AB
D-85622
Hitachi DSA00279
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Untitled
Abstract: No abstract text available
Text: 2SK1300 Silicon N-Channel MOS FET Application TO–220AB High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device – Can be driven from 5 V source • Suitable for motor drive, DC-DC converter,
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2SK1300
220AB
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2SK1300
Abstract: 2SK1300-E PRSS0004AC-A
Text: 2SK1300 Silicon N Channel MOS FET REJ03G0919-0200 Previous: ADE-208-1258 Rev.2.00 Sep 07, 2005 Application High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device Can be driven from 5 V source
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2SK1300
REJ03G0919-0200
ADE-208-1258)
PRSS0004AC-A
O-220AB)
2SK1300
2SK1300-E
PRSS0004AC-A
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2SK1300
Abstract: DSA003779 Hitachi DSA003779
Text: 2SK1300 Silicon N-Channel MOS FET Application High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive
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2SK1300
O-220AB
2SK1300
DSA003779
Hitachi DSA003779
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Hitachi DSA002713
Abstract: No abstract text available
Text: 2SK1300 Silicon N-Channel MOS FET November 1996 Application High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive
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2SK1300
O-220AB
20stics
Hitachi DSA002713
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2SK1300
Abstract: DSA003638
Text: 2SK1300 Silicon N-Channel MOS FET ADE-208-1258 Z 1st. Edition Mar. 2001 Application High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive
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2SK1300
ADE-208-1258
O-220AB
2SK1300
DSA003638
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2SK1300
Abstract: No abstract text available
Text: 2SK1300 Silicon N-Channel MOS FET Application TO–220AB High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device – Can be driven from 5 V source • Suitable for motor drive, DC-DC converter,
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2SK1300
220AB
2SK1300
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Hitachi DSA00279
Abstract: No abstract text available
Text: 2SK1300 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device • Can be driven from 5 V source Suitable for motor drive, DC-DC converter, power switch and solenoid drive
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2SK1300
Hitachi DSA00279
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fqp60n06
Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
Text: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier
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STP7NB40
STT3PF30L
STD20NE03L
STP60NE03L-12
STP60NE03L-10
STP40NF03L
STP80NE03L-06
STS4DPF30L
fqp60n06
spb32N03l
rfp60n06
SSH6N80
FQP50N10
FSD6680
STP55NF06 AND ITS EQUIVALENT
SFP70N03
HGTG*N60A4D
irf630 irf640
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2SK3235
Abstract: 2SK3379 Hitachi DSA00276 HAT1040T 2SJ517 2SK1835 TO220CFM 2SK3421 HAT1053
Text: HAT2038R/HAT2038RJ Silicon N Channel Power MOS FET High Speed Power Switching ADE-208-666C Z 4th. Edition Feb. 1999 Features • • • • For Automotive Application ( at Type Code “J “) Low on-resistance Capable of 4 V gate drive High density mounting
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HAT2038R/HAT2038RJ
ADE-208-666C
HAT2038R
HAT2038RJ
pdf\7420e
HAT1044M
HAT1053M
2SK3235
2SK3379
Hitachi DSA00276
HAT1040T
2SJ517
2SK1835
TO220CFM
2SK3421
HAT1053
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Hitachi DSA002787
Abstract: No abstract text available
Text: 4AK23 Silicon N-Channel Power MOS FET Array Application High speed power switching Features • Low on-resistance RDS on ≤ 0.25 Ω, VGS = 10 V, ID = 2.5 A • • • • Low drive current High speed switching High density mounting Suitable for H-bridged motor driver
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4AK23
Hitachi DSA002787
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Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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2sk 4207
Abstract: 2SK176 2SK975 equivalent 2SJ177 2SJ318 PM45502C 2SK2225 2sk1058 2SJ162 pwm 100w audio amplifier 2SK1336 equivalent
Text: CONTENTS Index . 5 General Information . 9
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D-85622
2sk 4207
2SK176
2SK975 equivalent
2SJ177
2SJ318
PM45502C
2SK2225
2sk1058 2SJ162
pwm 100w audio amplifier
2SK1336 equivalent
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2SK1300
Abstract: 2SK1305 DSA003638
Text: 2SK1305 Silicon N-Channel MOS FET ADE-208-1263 Z 1st. Edition Mar. 2001 Application High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive
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2SK1305
ADE-208-1263
O-220FM
2SK1300
2SK1305
DSA003638
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7054F
Abstract: BC564A HA13563 AC123A HITACHI microcontroller H8 534 manual IC 74LS47 AC538 BC245A 2SK3235 HA13557
Text: INDEX General General Information Semiconductor Packages Sales Locations Microcontroller Microcontroller General MultiChipModules Smart Card Micro. Overview Micro. Shortform Micro. Hardware Manual Micro. Program. Manual Micro. Application Notes LCD Controller / Driver
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2sc4537
2sc454.
2sc4591
2sc4592
2sc4593
2sc460.
2sc4628
2sc4629
2sc4643
2sc4680
7054F
BC564A
HA13563
AC123A
HITACHI microcontroller H8 534 manual
IC 74LS47
AC538
BC245A
2SK3235
HA13557
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2SK1300
Abstract: 2SK1300-E PRSS0004AC-A
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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2SK1778
Abstract: 27.145 2SK1296 2SJ172 2SJ173 2SJ174 2SJ247 2SK1300 2SK1301 2SK1302
Text: HITACHI 9 Table 6 : DIII-L Series Typical Characteristics Cont'd Electrical Characteristics typ. Absolute Maximum Ratings Package TO-220AB TO-220FM T0-3P T0-3P-FM Type Number 2SJ172 2SJ173 2SJ174 2SK970 2SK971 2SK972 2SK1296 2SK1300 2SK1301 2SK1302 2SJ247
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2SJ172
2SJ173
2SJ174
2SK970
2SK971
2SK972
2SK1296
2SK1300
2SK13003
2SK1665
2SK1778
27.145
2SK1296
2SJ172
2SJ174
2SJ247
2SK1300
2SK1301
2SK1302
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Untitled
Abstract: No abstract text available
Text: 2SK1300 Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device — Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive
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OCR Scan
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PDF
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2SK1300
O-220AB
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Untitled
Abstract: No abstract text available
Text: 2SK1300 Silicon N-Channel MOS FET HITACHI Application High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device — Can be driven from 5 V source • Suitable for motor drive, DC -D C converter, power switch and solenoid drive
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OCR Scan
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PDF
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2SK1300
O-220AB
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2SK1275
Abstract: 4AM14 6am12 2SK970 2SK971 2SK972 2SK973 2SK975 4AK15 4AK16
Text: 14 HITACHI 1.6 Power MOSFET Arrays For the ultimate in high density packaging, Hitachi produces both fully moulded 10-pin SIL array containing 4 logic level DUI-Series MOSFETs and in condensed 12-pin SIL array containing 6 logic level Dm-Series MOSFETs. These are very suitable for full bridge switching
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10-pin
12-pin
4AK17
2SK972
4AK15
2SK971
2SK1202
2SK1203
2SK1204
2SK696
2SK1275
4AM14
6am12
2SK970
2SK971
2SK972
2SK973
2SK975
4AK16
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2SK1778
Abstract: 2SK109 2SJ236 2SK1919 2SJ175 2SJ176 2SJ182 2SJ237 2SK1093 2SK1094
Text: 12 HITACHI DIII-HF Series High Speed Devices To improve switching losses for certain critical switching applications, Hitachi has introduced HF-Series with better built-in diode breakdown capability then the existing DIII-H series using life-time control technology.
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high-sp03
2SK1665
2SJ215
2SJ217
2SK1303
2SK1304
2SK1298
2SK1666
2SJ216
2SJ218
2SK1778
2SK109
2SJ236
2SK1919
2SJ175
2SJ176
2SJ182
2SJ237
2SK1093
2SK1094
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2SK1778
Abstract: 2SJ177 2SJ295 KWSA103 PF0030 PF0040 PF0042
Text: HITACHI 29 5.4 Communications Mobile RF SAW Filters KTACS KAMT« N M T/G SM Tb Bx Tu ft * T» 9m , hvm U m Typ IC - 4ädB Wide band aaaaMtkw •OStfBqrp SMD pàg - 4.5 s 5 J s 2mm 505L fan p riiw HWSAHB HWSB102 HWSAXB H W SBXa H W SA 03 H W SM » O m« Q m
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303L/3Â
KWSA103
HWSA10I
HWSB10I
HWSA01
PF0030
PP0031
PF0040
PP004I
2SK1778
2SJ177
2SJ295
PF0042
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2SK1778
Abstract: 2sk1299 4AM12 transistor 2sk1304 2sj177 4AK22 2SK1919 2SK971 transistor 2sk 2SK972
Text: HITACHI 14 1.6 Power MOSFET Arrays For the ultimate in high density packaging, Hitachi produces both fully moulded 10-pin SIL array containing 4 logic level DUI-Series MOSFETs and in condensed 12-pin SIL array containing 6 logic level Dm-Series MOSFETs. These are very suitable for full bridge switching
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OCR Scan
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PDF
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10-pin
12-pin
4AK17
2SK972
4AK15
2SK971
2SK1665
2SJ215
2SJ217
2SK1303
2SK1778
2sk1299
4AM12
transistor 2sk1304
2sj177
4AK22
2SK1919
2SK971
transistor 2sk
2SK972
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N25A
Abstract: 2SK1300 2SK1305 4AK20 SP-10 opel
Text: HITACHI 4AK20-SILICON N-CHANNEL POWER MOS FET ARRAY HIGH S P E E D P O W E R S W IT C H IN G • FE A T U R E S • Low On-Resistance Rds on & 0.25 Q , VGS = 10 V, lD= 2.5 A Rds (on) ^ 0.35 £1, VQS = 4 V, lD = 2.5 A • Capable of 4 V Gate Drive
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4AK20-
2SK1300,
2SK1305
123H567B9I0
SP-10)
2SK1300
N25A
2SK1300
2SK1305
4AK20
SP-10
opel
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