2SK139 Search Results

Contextual Info: 2SK1390 SIPMOS FU JI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET F - I I I S E R I E S lOutline Drawings • Features • High current • Low on-resistance • No secondary breakdown • Low driving power • High forward Transconductance ■Applications

DIODE KIV 4

Abstract: DIODE KIV 074I K1393 diode KIV 41 2SK1393 F10V25 DIODE KIV 2
Contextual Info: LVXS/'J-X M7-M0SFET LVX SERIES POWER MOSFET WM-j-iim O U T L IN E D IM E N S IO N S 2SK1393 F10V25 250v 10a • Æ fê S i R A TIN G S ■ A b s o lu te M axim u m R a tin g s m Ite m g ft y- S to ra g e T e m p e ra tu re Tsit; C h annel T e m p e ra tu re

Contextual Info: L V X v U — X M° 7 - M 0 SFE T LVX Series Power MOSFET o u t l in e d im e n s io n s 2SK1392 [FP6V25] 250V 6A • A * § * Ciss flVjvSUio ?SIC-tf□ ; U 7 7 .B •stSISIv « » « ^ © D C / D C D V A - ^ •D C 12 ~ 4 8 V A tl© S fllS RATINGS

71hfl

Abstract: 2SK1396 F30W25
Contextual Info: LVXy U - X /\° 7 —MOSFET ¡S ìS X -f LVX Series Power MOSFET N-l-v Z Jl', x > / \ > x * > M OUTLINE DIMENSIONS 2SK1396 Case MTO-3P [F30W25] [U n it ! mm. 5.0 ±0 3 250V 30A 2.2 * 0-5 Ciss ö V h il/V 0 X-C 2.0 ±03 A & m ^o 2.4 (T) G a te • tb im » K P fT O C /D C Z iy A - ^

F6V25

Abstract: 2SK1391
Contextual Info: LVXvU-X /\° 7 -M 0 S F E T LVX Series Power MOSFET UftM-Jiim OUTLINE DIMENSIONS Case TO-220 [Unit : mm] 2SK1391 [F6V25] 4.6 ±0 2 250V 6A m 1 •} ±0.2 -t-— — a •A * § * Ciss öVJvSlA fê lC -ë 'D K -r7 X fê A * S *ô '/J \ÿ U ’io ^ ty & iü w M i v

F10V25

Abstract: mosfet stk 2SK1393 TO-220-4
Contextual Info: LVXvU -X /\° 7 —MOSFET LVX S e rie s P o w e r M O S FE T 2SK1393 o u t l in e d im e n s io n s [F10V25] 250V 10A • A i Ä Ciss !g ic ifn ;w ;p ;* B A 2 ® « tf'J \£ U o •X'f 'y^y-y-P-lA f f i S U V m it • 3 c 8 S M « S •thlJsäf, S J M is 5 l? ® D C /D C I)V A -5

2SK1390

Abstract: 2SK1390-R
Contextual Info: 2SK1390-R FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET F- III SERIES Outline Drawings 15.5 ±0.3 2.3 ±0.2 2.1±0.3 Applications 1.6 ±0.3 +0.2 1.1 —0.1 Motor controllers ±0.3 3.2 +0.3 ±0.3 5.45 ±0.2 5.45 ±0.2 General purpose power amplifier DC-DC converters

2SK1395

Abstract: 2sk2006 2SK1539 2SK1685
Contextual Info: E IA J No. SM D jj&no v 2SK1861 2SK1931 2SK1194 2SK1195 2SK1672 2SK1533 2SK2005 2SK2006 LVX S eries 2SK1391 2SK1392 2SK1393 2SK1394 2SK1395 2SK1396 2SK1397 2SK1810 2SK1811 2SK1812 VX S e rie s 2SK1672 2SK1244 2SK1245 2SK1246 2SK1247 2SK1693 2SK1694 2SK1695

2SK1395

Contextual Info: LV X vU -X /t 7 —MOSFET LVX SERIES POWER MOSFET W-B~ O U T L I N E • D IM E N S IO N S Case : M T 0 -3 P 2SK1395 F20W25 250v 20A ■ Æ fë ü R A TIN G S ■ $ Ê 2 ÎiK ;^ 5 È Î& A b s o lu te M a x im u m R a tin g s iR S 82 Ite m iW f ¡'rai.N>C

Contextual Info: L V X v U - X /t*7 -M 0 S F E T LVX SERIES POWER MOSFET O U T L IN E D IM E N S IO N S 2SK1391 F6V25 250v 6a • Æ fê Ü R ATING S A b s o lu te M a x im u m R a tin g s Jl Item fe @ -§• %. M # C onditions Symbol R atings # » te U n it S to ra g e T e m pe ratu re

Contextual Info: MOSFETs F-lll Series - Logic Level Operation, Low R ds ON 30-150 Volts Maximum Ratinas Device Type V dss (V) 2SK1505MR 2SK2048L.S 2SK1388 2SK1083MR 2SK1096MR 2SK1086MR 2SK1881L.S 2SKl387MR " IS K iW " — '2SK1B56 ; 2SK1389 2SK1390R 2SK2049 2SK1087MR 2SK1817MR

Contextual Info: 2SK1392 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)250 V(BR)GSS (V)30 I(D) Max. (A)6.0 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)12 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)25 Minimum Operating Temp (øC)

2SK1083MR

Abstract: 2SK1086MR 2SK1096MR 2SK1387MR 2SK1388 2SK1505MR 2SK1881L 2SK2048L 2sk1506
Contextual Info: MOSFETs F-lll Series - Logic Level Operation, Low R d s o n 3 0 - 1 5 0 Volts Device Type Maximum Ratinas V dss (V) Pd (W) Id (A ) 2SK1505MR 2SK2048L.S 2SK1388 2SK1083MR 2SK1096MR 2SK1086MR 2SK1881L.S 2SK1387MR 2SK1089 2SK1508 2SK1389 2SK1390R 2SK2049

D1477

Abstract: 2SJ185 2SK1399
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK1399 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING DESCRIPTION PACKAGE DRAWING Unit : mm 1 3 1.1 to 1.4 +0.1 0.16 –0.06 Marking 0 to 0.1 ORDERING INFORMATION PART NUMBER PACKAGE 2SK1399 SC-59 (Mini Mold)

Contextual Info: L V X v 'J - X A °7 “ M0SFET ¡g & x - r LVX S eries Pow er M OSFET + 2SK1391 X > / \ > T . j O S g J o u t l in e d i m e n s io n s [F6V25] 250V 6A • A ^ S Ä C iss) ôVJvÿiA íiic iíd ; u M I A •X 'f ¿ > t fÜ lA e f t » . SJfflWäsSfflDC/DC □ y H - ?

K1397

Abstract: 2SK1397 F40W25 sis 965
Contextual Info: LVXy U —X ¡Si /\° 7 -M 0 S F E T LVX S eries Pow er MOSFET o u tlin e d im e n s io n s 2SK1397 [Unit ! mm] C a s e : M T O -3 P [F40W25] 250V 40A 2.2 ±os i 3.3 ± M u y h E - if WJ •A ^ jS Ü Ä (Ciss) 2 .0 ±a3 96 ^ IC t ìD A '^ X B f c D A ^ S M f f /M U

2SK1397

Abstract: F40W25
Contextual Info: L V X î/ U - X /17-M O S FE T LVX SERIES POWER MOSFET • O U T L IN E D IM E N S IO N S Case : MT0-3P 2SK1397 F40W 25 5.0±»3 250v 40a [Unit • mm] ■ Æ fê S l R A T IN G S ■ A b s o lu te M a x im u m R a tin g s m Be § Ite m %. S ym bol ft m.

Contextual Info: LVX->'J—X A7-M0SFET LVX SERIES POWER MOSFET O U T L IN E D IM E N S IO N S 2SK1392 FP6V25 250V 6 a • Æ fê ü R ATING S ■ A b s o lu te M a x im u m m Ite m R a tin g s h * S y m b ol M C o n d itio n s ^ m it. tit R a tin g s U n it S to ra g e T e m p e ra tu re

F10V25

Contextual Info: LV X ^U -X / 19-MOSFET LVX SERIES POWER MOSFET • O U T L IN E D IM E N S IO N S 2SK1393 F 1 0 V 2 5 250V 10A ■ R A TIN G S ■ A b s o lu te M a x im u m « a R a tin g s BË ^ S y m b ol Ite m m & C o n d itio n s M R a tin g s m Ä it . U n it f 7tì~ i m j l :

TC234

Abstract: D1477 2SJ184 2SK1398 transistor G25
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK1398 N-CHANNEL MOS FET FOR HIGH SPEED SWITCHING ★ ORDERING INFORMATION DESCRIPTION The 2SK1398 is N-channel MOS Field Effect Transistor designed for a high-speed switching device in digital circuits. The 2SK1398 is driven by a 2.5-V power source, it is

2SK1395

Abstract: F20W25 k1395 250v 10A mosfet
Contextual Info: L V X ^ 'J -X /* 7 —MOSFET 1 LVX SCRIE8 POWER MOSFET O U T L IN E D IM E N S IO N S 2SK1395 F20W25 8 250v 20a • Æ l#3? RATINGS A b s o lu te M a x im u m R a tin g s Jïi fl Ite m E u m & is . S to ra g e T e m p e ra tu re KV" Ä v * v — X iCHi • V -x m JE

smd transistor marking G12

Abstract: SMD Transistor g12 smd diode marking G12 G12 SMD SOT23 smd marking g12 marking g12 2SK1399
Contextual Info: MOSFET SMD Type MOS Field Effect Transistor 2SK1399 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 1 impedance 0.55 Not necessary to consider driving current because of it is high input +0.1 1.3-0.1 +0.1 2.4-0.1 Can be driven by a 3.0-V power source 0.4

v1h diode

Abstract: 2SK1394 FP10V25 ITO-220 current source 5A ac D 4602
Contextual Info: I LVXv'J-X / f 7-M 0SFET LVX SERIES POWER MOSFET O U T L IN E D IM E N S IO N S 2SK1394 FP10V25 I 250V 10A • Æ f ê ii RATINGS A b s o lu te M axim u m R a tin g s m :Ìll V Sym bol h Ite m 0k f t C o n d itio n s & I & m R a tin g s 'H f* U n it S to r a g e T e m p e ra tu r e

TO-220F15

Abstract: 2630 2SK1388 2SK2248-01L 2SK1083MR 2SK1086MR 2SK1096MR 2SK1387MR 2SK1505MR 2SK1508
Contextual Info: MOSFETs F-lll Series - Logic Level Operation, Low R d s o n 3 0 - 1 5 0 Volts Device Type Maximum Ratinas V dss (V) Pd (W) Id ( A ) 2SK1505MR 2SK2048L.S 2SK1388 2SK1083MR 2SK1096MR 2SK1086MR 2SK1881L.S 2SK1387MR 2SK1089 2SK1508 2SK1389 2SK1390R 2SK2049