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    2SK177 Search Results

    2SK177 Datasheets (60)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    2SK1770
    Hitachi Semiconductor Power Transistors Data Book Scan PDF 274.75KB 2
    2SK1770
    Unknown FET Data Book Scan PDF 108.95KB 2
    2SK1770
    Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF 129.71KB 1
    2SK1770
    Unknown Catalog Scans - Shortform Datasheet Scan PDF 94.51KB 1
    2SK1770
    Unknown Catalog Scans - Shortform Datasheet Scan PDF 82.07KB 1
    2SK1771
    Unknown High Frequency Device Data Book (Japanese) Scan PDF 45.91KB 1
    2SK1771
    Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF 129.71KB 1
    2SK1771
    Toshiba TRANS MOSFET N-CH 12.5V 0.03A 4(2-3J1D) Scan PDF 193.5KB 5
    2SK1771
    Toshiba Field Effect Transistor Silicon N-Channel MOS Type Scan PDF 2.58MB 5
    2SK1771
    Toshiba Silicon N channel field effect transistor for FM tuner and VHF RF amplifier applications Scan PDF 224.12KB 6
    2SK1772
    Hitachi Semiconductor Silicon N Channel MOS FET Original PDF 41.78KB 9
    2SK1772
    Hitachi Semiconductor Silicon N-Channel MOS FET Original PDF 42.07KB 9
    2SK1772
    Hitachi Semiconductor Mosfet Guide Original PDF 6.15MB 1147
    2SK1772
    Renesas Technology Silicon N-Channel MOS FET Original PDF 62.75KB 11
    2SK1772
    Renesas Technology Silicon N Channel MOS FET Original PDF 70.66KB 7
    2SK1772
    Hitachi Semiconductor Power Transistors Data Book Scan PDF 207.41KB 2
    2SK1772
    Unknown FET Data Book Scan PDF 110.38KB 2
    2SK1772
    Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF 129.71KB 1
    2SK1772
    Unknown Catalog Scans - Shortform Datasheet Scan PDF 79.06KB 1
    2SK1772
    Unknown Catalog Scans - Shortform Datasheet Scan PDF 51.6KB 1
    SF Impression Pixel

    2SK177 Price and Stock

    Renesas Electronics Corporation

    Renesas Electronics Corporation 2SK1775-E

    MOSFET N-CH 900V 8A TO3P
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SK1775-E Tube
    • 1 -
    • 10 -
    • 100 -
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    Buy Now

    Renesas Electronics Corporation 2SK1772HYTR-E

    Small Signal Field-Effect Transistor, 1A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics 2SK1772HYTR-E 167 1
    • 1 -
    • 10 -
    • 100 $0.46
    • 1000 $0.38
    • 10000 $0.34
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    2SK177 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: 2SK1771 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type 2SK1771 FM Tuner, VHF RF Amplifier Applications • Superior inter modulation performance. • Low noise figure: NF = 1.0dB typ. Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics


    Original
    2SK1771 PDF

    2SK68

    Abstract: 2SK1774 2SK684 10MAVgs
    Contextual Info: 4M^b20S 2SK1774 0 0 1 3 5 4^ 344 • H I T 4 HITACHI/COPTOELECTRONICS tiE I Silicon N Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switchingregulator, DC-DC


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    2SK1774 0D13550 2SK684 D013SS1 2SK68 10MAVgs PDF

    Contextual Info: 2SK1775 Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switchingregulator, DC-DC converter Outline


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    2SK1775 PDF

    Hitachi DSA002748

    Contextual Info: 2SK1772 Silicon N-Channel MOS FET November 1996 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device - - - can be driven from 5 V source. Suitable for DC-DC converter, motor drive, power switch, solenoid drive


    Original
    2SK1772 D-85622 Hitachi DSA002748 PDF

    2SK1342

    Abstract: 2SK1775
    Contextual Info: 2SK1775 Silicon N Channel MOS FET Application TO–3PFM High speed power switching Features • • • • • Low on–resistance High speed switching Low drive current No secondary breakdown Suitable for switchingregulator, DC–DC converter 1 2 3 1. Gate


    Original
    2SK1775 2SK1342 2SK1342 2SK1775 PDF

    2SK1772

    Abstract: Hitachi DSA00398
    Contextual Info: 2SK1772 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device - - - can be driven from 5 V source. Suitable for DC-DC converter, motor drive, power switch, solenoid drive


    Original
    2SK1772 2SK1772 Hitachi DSA00398 PDF

    Contextual Info: 2SK1773 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)1k V(BR)GSS (V)30 I(D) Max. (A)5 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)15 @Pulse Width (s) (Condition)10u Absolute Max. Power Diss. (W)100 Minimum Operating Temp (øC)


    Original
    2SK1773 PDF

    100C

    Abstract: 2SK1771 V782
    Contextual Info: 2SK1771 T O S H IB A TO SHIBA FIELD EFFECT TRANSISTOR SILICON N -C H AN N EL MOS TYPE 2 S K 1 7 71 Unit in mm FM TUNER, VHF RF AMPLIFIER APPLICATIONS. 2.9 • • Superior Inter Modulation Performance. Low Noise Figure. : NF = 1.0dB Typ. - 0.3 a 1 B ID 2


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    2SK1771 100MHz, --10mA 100C 2SK1771 V782 PDF

    Contextual Info: 2SK1772 Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device — can be driven from 5 V source. • Suitable for DC-DC converter, motor drive, power switch, solenoid drive


    OCR Scan
    2SK1772 PDF

    Contextual Info: 2SK1773 Silicon N-Channel MOS FET HITACHI November 1996 A pplication High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switchingregulator, DC-DC converter Outline


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    2SK1773 PDF

    transistor T600

    Abstract: 100C 2SK1771
    Contextual Info: TO SH IBA 2SK1771 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N-CHANNEL MOS TYPE 2 S K 1 771 Unit in mm FM TUNER, VHF RF AMPLIFIER APPLICATIONS + 0.2 • • 2 .9 - 0 . 3 Superior Inter Modulation Performance. Low Noise Figure : NF = 1.0dB Typ. 1 a MAXIMUM RATINGS (Ta = 25°C)


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    2SK1771 transistor T600 100C 2SK1771 PDF

    2SK1771

    Contextual Info: 2SK1771 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type 2SK1771 FM Tuner, VHF RF Amplifier Applications • Superior inter modulation performance. • Low noise figure: NF = 1.0dB typ. Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics


    Original
    2SK1771 2SK1771 PDF

    2SK1774

    Abstract: 2SK68 2SK684 Hitachi Scans-001
    Contextual Info: HM^bsas 001334=1 3 m h « h i t m 2SK1774 HITACHI/ OPTOELECTRONICS blE D Silicon N Channel MOS FET Application High speed power switching TO-3P*FM Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown


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    2SK1774 001354e! 2SK684 D013SS1 2SK1774 2SK68 Hitachi Scans-001 PDF

    2SK1775-E

    Abstract: 2SK1775 PRSS0003ZA-A
    Contextual Info: 2SK1775 Silicon N Channel MOS FET REJ03G0973-0200 Previous: ADE-208-1320 Rev.2.00 Sep 07, 2005 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter


    Original
    2SK1775 REJ03G0973-0200 ADE-208-1320) PRSS0003ZA-A 2SK1775-E 2SK1775 PRSS0003ZA-A PDF

    2SK1772

    Contextual Info: 2SK1772 Silicon N Channel MOS FET Application UPAK High speed power switching Features 3 Low on–resistance High speed switching Low drive current 4 V gate drive device - - - can be driven from 5 V source. • Suitable for DC – DC converter, motor drive,


    Original
    2SK1772 2SK1772 PDF

    2SK1773

    Abstract: DSA003639
    Contextual Info: 2SK1773 Silicon N-Channel MOS FET ADE-208-1319 Z 1st. Edition Mar. 2001 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switchingregulator, DC-DC converter


    Original
    2SK1773 ADE-208-1319 2SK1773 DSA003639 PDF

    Contextual Info: SILICON N CHANNEL MOS TYPE O 2SK1771 Unit in mm FM TUNER, VHF RF AMPLIFIER APPLICATIONS. o n+ 0-« 2 . 9 - 0.3 • Superior Inter Modulation Performance. • Low Noise Figure. r~ B 1 : NF = 1.0db TYP. 2 1 K ' 0'* 1 - 5 - 0.1 5* *ir ÎT M A X IM U M RATINGS (Ta = 25°C)


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    2SK1771 100MHz PDF

    100C

    Abstract: 2SK1771
    Contextual Info: 2SK1771 TOSHIBA TOSHIBA FIELD EFFECT TRANSISTOR SILICON N-CHANNEL MOS TYPE 2 S K 1 771 Unit in mm FM TUNER, VHF RF AM PLIFIER APPLICATIONS • • + 0.2 2.9-0.3 Superior Inter Modulation Performance. Low Noise Figure : NF = 1.0dB Typ. 1 a B l M A X IM U M RATINGS (Ta = 25°C)


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    2SK1771 100MHz, --10mA 100C 2SK1771 PDF

    I342

    Abstract: I342 G
    Contextual Info: 2SK1775 Silicon N-Channel MOS FET HITACHI Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switchingregulalor. DC-DC converter Outline TO-3PFM D


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    2SK1775 I342 I342 G PDF

    2SK1342

    Abstract: 2SK1775 Hitachi DSA00396
    Contextual Info: 2SK1775 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switchingregulator, DC-DC converter Outline TO-3PFM D G 1 S 2


    Original
    2SK1775 2SK1342 2SK1775 Hitachi DSA00396 PDF

    2SK1771

    Contextual Info: 2SK1771 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type 2SK1771 FM Tuner, VHF RF Amplifier Applications • Superior inter modulation performance. · Low noise figure: NF = 1.0dB typ. Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Symbol


    Original
    2SK1771 2SK1771 PDF

    Hitachi DSA00349

    Abstract: 2SK1773
    Contextual Info: 2SK1773 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switchingregulator, DC-DC converter Outline TO-3P D 1 G 2 S 3


    Original
    2SK1773 Hitachi DSA00349 2SK1773 PDF

    Contextual Info: 44^505 2SK1774 0D13541 344 • H I T M HITACHI/ OPTOELECTRONICS blE D Silicon N Channel MOS FET Application High speed power switching TO-3P*FM Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switchingregulator, DC-DC


    OCR Scan
    0D13541 2SK1774 2SK684 0Q13SS1 PDF

    Hitachi DSA002779

    Contextual Info: 2SK1773 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switchingregulator, DC-DC converter Outline TO-3P D 1 G 2 S 3


    Original
    2SK1773 D-85622 Hitachi DSA002779 PDF