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    2SK195 Search Results

    2SK195 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SK1954-AZ Renesas Electronics Corporation Silicon N Channel MOSFET Visit Renesas Electronics Corporation
    2SK1954-Z-AZ Renesas Electronics Corporation Silicon N Channel MOSFET Visit Renesas Electronics Corporation
    2SK1958-T1-A Renesas Electronics Corporation Power MOSFETs for Automotive Visit Renesas Electronics Corporation
    2SK1954-Z-E1-AZ Renesas Electronics Corporation Silicon N Channel MOSFET Visit Renesas Electronics Corporation
    2SK1957-E Renesas Electronics Corporation Switching N-Channel Power Mosfet, TO-220FM, /Tube Visit Renesas Electronics Corporation
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    2SK195 Price and Stock

    Rochester Electronics LLC 2SK1957-E

    N-CHANNEL POWER MOSFET
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    DigiKey 2SK1957-E Bulk 123
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    Rochester Electronics LLC 2SK1958-T1-A

    2SK1958-T1-A - N-CHANNEL MOS FET
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    Rochester Electronics LLC 2SK1959-T1-AZ

    SMALL SIGNAL N-CHANNEL MOSFET
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    Renesas Electronics Corporation 2SK1958-T1-A

    Trans MOSFET N-CH 16V 0.1A 3-Pin SC-70 T/R
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    Rochester Electronics 2SK1958-T1-A 69,067 1
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    Renesas Electronics Corporation 2SK1959-T1-AZ

    Trans MOSFET N-CH 16V 2A 4-Pin(3+Tab) SC-62 T/R
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    2SK195 Datasheets (71)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SK195 NEC Semiconductor Selection Guide 1995 Original PDF
    2SK195 NEC Small Signal FET(Junction type) FM tuner Original PDF
    2SK195 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SK195 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2SK195 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SK195 Unknown High Frequency Device Data Book (Japanese) Scan PDF
    2SK195 Unknown FET Data Book Scan PDF
    2SK1950 Hitachi Semiconductor Mosfet Guide Original PDF
    2SK1950 Hitachi Semiconductor Power Transistors Data Book Scan PDF
    2SK1950 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SK1950 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SK1950 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SK1950L Renesas Technology Silicon N-Channel MOS FET Original PDF
    2SK1950(L)(S) Unknown FET Data Book Scan PDF
    2SK1950S Renesas Technology Silicon N-Channel MOS FET Original PDF
    2SK1951 Hitachi Semiconductor Mosfet Guide Original PDF
    2SK1951 Hitachi Semiconductor Silicon N Channel MOS FET Original PDF
    2SK1951 Renesas Technology Silicon N-Channel MOS FET Original PDF
    2SK1951 Hitachi Semiconductor Power Transistors Data Book Scan PDF
    2SK1951 Unknown Catalog Scans - Shortform Datasheet Scan PDF

    2SK195 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK1954,1954-Z SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION <R> PACKAGE DRAWINGS Unit: mm 6.5 ±0.2 1.5 −0.1 voltage switching applications. +0.2 The 2SK1954 is N-channel MOS Field Effect Transistor designed for high


    Original     		PDF 2SK1954 1954-Z O-252

    2SK1959

    Abstract: C10535E MEI-1202
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK1959 N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING The 2SK1959 is an N-channel vertical MOS FET. Because PACKAGE DIMENSIONS in mm it can be driven by a voltage as low as 1.5 V and it is not necessary to consider a drive current, this FET is ideal as an


    Original     		PDF 2SK1959 2SK1959 C10535E MEI-1202

    2SK1957

    Abstract: DSA003639
    Text: 2SK1957 Silicon N-Channel MOS FET ADE-208-1336 Z 1st. Edition Mar. 2001 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No Secondary Breakdown Suitable for Switching regulator, DC - DC converter,Motor Control


    Original     		PDF 2SK1957 ADE-208-1336 O-220FM 2SK1957 DSA003639

    Untitled

    Abstract: No abstract text available
    Text: IC SMD SMD Type Type Product specification 2SK1959 SOT-89 Features Unit: mm 4.50 1.50 +0.1 -0.1 +0.1 -0.1 +0.1 1.80-0.1 +0.1 2.50-0.1 Low ON resistance RDS on =3.2 MAX.@VGS=1.5V,ID=50mA 3 2 +0.1 0.53-0.1 +0.1 0.44-0.1 2.60 +0.1 -0.1 +0.1 0.48-0.1 +0.1 0.80-0.1


    Original     		PDF 2SK1959 OT-89

    Hitachi DSA002781

    Abstract: No abstract text available
    Text: 2SK1957 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No Secondary Breakdown Suitable for Switching regulator, DC - DC converter,Motor Control Outline


    Original     		PDF 2SK1957 O-220FM D-85622 Hitachi DSA002781

    2SK1957

    Abstract: No abstract text available
    Text: 2SK1957 Silicon N Channel MOS FET Application TO–220FM High speed power switching Features • • • • • Low on–resistance High speed switching Low drive current No Secondary Breakdown Suitable for Switching regulator, DC – DC converter,Motor Control


    Original     		PDF 2SK1957 220FM 2SK1957

    2SK1957

    Abstract: Hitachi DSA00395
    Text: 2SK1957 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No Secondary Breakdown Suitable for Switching regulator, DC - DC converter,Motor Control Outline


    Original     		PDF 2SK1957 O-220FM 2SK1957 Hitachi DSA00395

    2SK1954

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK1954,1954-Z SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION PACKAGE DRAWINGS Unit: mm 6.5 ±0.2 1.5 −0.1 voltage switching applications. +0.2 The 2SK1954 is N-channel MOS Field Effect Transistor designed for high


    Original     		PDF 2SK1954 1954-Z

    2Sk1951

    Abstract: Hitachi DSA001652
    Text: 2SK1951 Silicon N-Channel MOS FET November 1996 Application High speed power switching Features • • • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for Switching regulator, DC - DC converter


    Original     		PDF 2SK1951 O-220FM D-85622 2Sk1951 Hitachi DSA001652

    S 170 MOSFET TRANSISTOR

    Abstract: S 170 TRANSISTOR 2SK1954
    Text: IC MOSFET SMD Type MOS Field Effect Power Transistor 2SK1954 Features TO-252 Low on-resistance RDS on =0.65 (VGS=10V,ID=2A) +0.15 1.50-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 2.3 +0.1 0.60-0.1 +0.15 5.55-0.15 0.127 max +0.25


    Original     		PDF 2SK1954 O-252 300pF S 170 MOSFET TRANSISTOR S 170 TRANSISTOR 2SK1954

    2SK1959

    Abstract: No abstract text available
    Text: IC MOSFET SMD Type MOS Field Effect Transistor 2SK1959 SOT-89 Features Unit: mm 4.50 1.50 +0.1 -0.1 +0.1 -0.1 +0.1 1.80-0.1 +0.1 2.50-0.1 Low ON resistance RDS on =3.2 MAX.@VGS=1.5V,ID=50mA 3 2 +0.1 0.53-0.1 +0.1 0.44-0.1 2.60 +0.1 -0.1 +0.1 0.48-0.1 +0.1


    Original     		PDF 2SK1959 OT-89 2SK1959

    Hitachi DSA002748

    Abstract: N5030
    Text: 2SK1957 Silicon N-Channel MOS FET November 1996 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No Secondary Breakdown Suitable for Switching regulator, DC - DC converter,Motor Control


    Original     		PDF 2SK1957 O-220FM D-85622 Hitachi DSA002748 N5030

    Hitachi DSA001652

    Abstract: No abstract text available
    Text: 2SK1950 L , 2SK1950(S) Silicon N-Channel MOS FET November 1996 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current 2.5 V gate drive device can be driven from 3 V source Suitable for Switching regulator, DC - DC converter


    Original     		PDF 2SK1950 D-85622 Hitachi DSA001652

    Untitled

    Abstract: No abstract text available
    Text: Transistors IC SMD Type Type SMD Product specification 2SK1954 Features TO-252 Low on-resistance RDS on =0.65 (VGS=10V,ID=2A) +0.15 1.50-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 2.3 +0.1 0.60-0.1 +0.15 5.55-0.15 0.127 max +0.25


    Original     		PDF 2SK1954 O-252 300pF

    TC787

    Abstract: LT 7824 2SK1958 T210 T460 T540 TSS045 diode lt 0236 SA-0897 FET2SK1958
    Text: JI -7\ l?\ I IK NEC M O S F ield E ffe c t T ra n s is to r 2SK1958 MOS F E T 2SK1958 Ü 1 .5 V | g f j j ^ 7 V N f - ^ / l 4 i ^ M O S F E T T'i> 9, Æ îtŒ T - lg ÿ jT 'ë , f r o K ÿ 4 7 l i ^ £ # # : m m ) J l 1 - S £ > g f r & ^ £ :iò , ^ -y F ^ > x f w i ü i l / t 'r " ^ # / 7 4- ¿f


    OCR Scan     		PDF 2SK1958 IEI-620) IZBTi14Ã TC787 LT 7824 2SK1958 T210 T460 T540 TSS045 diode lt 0236 SA-0897 FET2SK1958

    Untitled

    Abstract: No abstract text available
    Text: 2SK1952 Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device can be driven from 5 V source • Suitable for Switching regulator, DC - DC converter


    OCR Scan     		PDF 2SK1952 O-220FM

    Untitled

    Abstract: No abstract text available
    Text: # a 2j J f c ' ' r 7 — M O S F E T M O S Field E ffect P o w e r Transistors 2S K19 5 4 ,2SK 19 54-Z N f ^ ; k N 0 ,7 - M O S F E T jim m 2SK1954 l ì N f- ^ * s u m ? '* '7 - MOS F E T T * is 0 Si JW]' X -i -y f- > DC-D C a V ^ - i ' C i l T ' t o # m


    OCR Scan     		PDF 2SK1954

    Untitled

    Abstract: No abstract text available
    Text: 2SK1957 Silicon N-Channel MOS FET HITACHI Application High speed power switching Features • • • • • Low on-resistanee High speed switching L ow drive current N o Secondary Breakdown Suitable for Sw itching regulator, DC - DC converter,M otor Control


    OCR Scan     		PDF 2SK1957 O-220FM

    2SK1953

    Abstract: MEI-1202 TEA-1035
    Text: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials. P1 98.2 DATA SHEET NEC MOS FIELD EFFECT POWER TRANSISTOR 2SK1953 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE


    OCR Scan     		PDF 2SK1953 IEI-1209) MEI-1202 TEA-1035

    2SK1954

    Abstract: 2SK1954-Z MEI-1202 TEA-1035
    Text: DATA SHEET ir NEC MOS FIELD EFFECT POWER TRANSISTOR 2SK1954, 2SK1954-Z » - M SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2S K1954 is N -channel M O S Field Effect Transistor in millimeters


    OCR Scan     		PDF 2SK1954, 2SK1954-Z 2SK1954 IEI-1209) 2SK1954-Z MEI-1202 TEA-1035

    NEc hemt

    Abstract: 2SK1953 2SK1963 2SK2043 2SK1951 2SK1952 2SK1954 2SK1958 2SK1959 2SK1960
    Text: - 126 - H f m £ ít % m m « it i A A 5È 1 K V m * * * (V) « fér , R, L (A) * :t * less (max) (A) (W) Vg s (V) (min) (A) SE W (Ta=25‘ C) (min) (max) V d s (V) (V) (V) (max) Vd s (A) (V) (min) (S) (t$ Id (A) Vd s ’ (V) Id (A) 2SK1951 B Ì 'HS PSW, DDC


    OCR Scan     		PDF 2SK1951 2SK1952 2SK1953 2SK1954, 1954-Z 2SK195T 90nstyp 2SK1991 2SK1992 NEc hemt 2SK1963 2SK2043 2SK1954 2SK1958 2SK1959 2SK1960

    2SK1953

    Abstract: transistor 7905 nec 7905 7905 Nec MEI-1202 TEA-1035 TC-2447
    Text: DATA SHEET NEC MOS FIELD EFFECT POWER TRANSISTOR 2SK1953 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK1953 is N-channel MOS Field Effect Transistor PACKAGE DIMENSIONS in m illim eters designed fo r high voltage switching applications.


    OCR Scan     		PDF 2SK1953 IEI-1209) transistor 7905 nec 7905 7905 Nec MEI-1202 TEA-1035 TC-2447

    Untitled

    Abstract: No abstract text available
    Text: 2SK1957 Silicon N-Channel MOS FET HITACHI November 1996 Application High speed pow er switching Features • Low on-resistance • High speed switching • Low drive current • No Secondary Breakdown • Suitable for Switching regulator, DC - DC converter,M otor Control


    OCR Scan     		PDF 2SK1957 O-220FM

    nec 7905

    Abstract: 2SK1953 7905 Nec TC-7905 applications OF IC 7905 TC-2447
    Text: DATA SHEET NEC MOS FIELD EFFECT POWER TRANSISTOR 2SK1953 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK1953 is N -channel M O S Field Effect Transistor designed fo r high voltage switching applications. FEATURES • Low On-state Resistance


    OCR Scan     		PDF 2SK1953 2SK1953 IEI-1209) nec 7905 7905 Nec TC-7905 applications OF IC 7905 TC-2447