2SK21 Search Results

DSA007622

Contextual Info: 2SK210 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK210 FM Tuner Applications VHF Band Amplifier Applications Unit: mm • High power gain: GPS = 24dB typ. (f = 100 MHz) • Low noise figure: NF = 1.8dB (typ.) (f = 100 MHz) • High forward transfer admittance: |Yfs| = 7 mS (typ.) (f = 1 kHz)

Contextual Info: TOSHIBA 2SK2162 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2 S K 2 1 62 AUDIO FREQUENCY POWER AMPLIFIER APPLICATION • • • INDUSTRIAL APPLICATIONS Unit in mm High Breakdown Voltage : V j gg= 180V High Forward Transfer Admittance : |Yfs|=0.7S Typ.)

Contextual Info: SHINDENGEN VX-2 Series Power MOSFET 2SK2177 N-Channel Enhancement type OUTLINE DIMENSIONS F1E50VX2 Case : E-pack (Unit : mm) 500V 1A FEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small.

Contextual Info: 2SK2144 Silicon N Channel MOS FET REJ03G1001-0200 Previous: ADE-208-1349 Rev.2.00 Sep 07,2005 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No Secondary Breakdown Suitable for switching regulator, DC-DC converter

2SK210

Contextual Info: SILICON N CHANNEL JUNCTION TYPE 2SK210 U nit in mm FM TUNER APPLICATIONS. VHF BAND AMPLIFIER APPLICATIONS. + Ü5 2 .5 -0 1 3 + Û2 5 1 .5 - t t 1 5 • High Power Gain : G ps = 24dB Typ. (f= 100MHz) • Low Noise Figure : N F= 1.8dB (Typ.) (f= 100MHz) •

Contextual Info: 2SK2166-01R N-channel MOS-FET FAP-IIIA Series 60V > Features - 0,03Ω 40A 80W > Outline Drawing High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance Avalanche Proof Including G-S Zener-Diode > Applications

2SK2149

Contextual Info: TOSHIBA Discrete Semiconductors 2SK2149 Unit in mm Silicon N Channel MOSType c - MOS IV High Speed, High Current Switching Applications. Chopper Regulator, DC-D C Converter and Motor Drive Applications. • Low Drain-Source ON Resistance: läs(ON) = 0.6i2 (Typ.)

2SK2145

Contextual Info: TOSHIBA 2SK2145 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2 S K 2 1 45 Unit in mm AUDIO FREQUENCY LO W NOISE AM PLIFIER APPLICATIONS. • . • • + 0.2 Including Two Devices in SM5 Super Mini Type with 5 Leads. High |Yfs| : |Yfs| = 15mS (Typ.) at VDS = 10V, VGS = 0

2SK2146

Abstract: H1 SOT-89
Contextual Info: TOSHIBA • ^ 7 2 5 0 0Q2337D f l ^ T O S H IB A FIELD EFFECT T R A N S IS T O R 2SK2146 SILIC O N N C H A N N E L M O S T Y P E 2 S K 2 1 46 H IG H S PEED , HIGH C U R R E N T S W IT C H IN G A P P L IC A T IO N S C H O P P E R R E G U L A T O R , DC-DC C O N V E R T E R A N D M O T O R D R IV E

smd marking g23

Abstract: SOT-23 marking g23
Contextual Info: MOSFET SMD Type Product specification 2SK2158 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 1 consider driving current. 0.55 Because of high input impedance, there is no need to +0.1 1.3-0.1 +0.1 2.4-0.1 Capable of drive gate with 1.5 V 2 +0.1 0.95-0.1

K2162

Abstract: 2SJ338 2SK2162
Contextual Info: 2SK2162 東芝電界効果トランジスタ シリコンNチャネルMOS形 2SK2162 ○ 低周波電力増幅用 5.2 ± 0.2 : VDSS = 180 V 高順方向伝達アドミタンスです。 : |Yfs| = 0.7 S 標準 2SJ338 とコンプリメンタリになります。

2SK2171

Contextual Info: Ordering number:ENN4871 N-Channel Junction Silicon FET 2SK2171 High-Frequency, Low-Frequency Amplifier Analog Switch Applications Features Package Dimensions • Adoption of FBET process. · Large | yfs |. · Small Ciss. · High PD allowable power dissipation.

dc-dc converter hitachi

Abstract: HITACHI DIODE 2SK1404 2SK2118 DSA003639
Contextual Info: 2SK2118 Silicon N-Channel MOS FET ADE-208-1348 Z 1st. Edition Mar. 2001 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for Switching regulator, DC-DC converter,Motor Control

2SK2124

Abstract: DSA003718
Contextual Info: Power F-MOS FETs 2SK2124 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed: EAS > 130mJ ● VGSS = ±30V guaranteed ● High-speed switching: tf = 60ns ● No secondary breakdown unit: mm 4.6±0.2 φ3.2±0.1 9.9±0.3 2.9±0.2

2SK213 2Sk214

Abstract: 2SK216 j78 transistor 2SK214 2SK213 2SK215 2SJ76 2sk216 equivalent C2575
Contextual Info: 2SK213, 2SK214, 2SK215, 2SK216 Silicon N-Channel MOS FET Application TO–220AB High frequency and low frequency power amplifier, high speed switching. Complementary pair with 2SJ76, J77, J78, J79 Features • • • • 3 Suitable for direct mounting High forward transfer admittance

toshiba audio power amplifier

Abstract: Audio Power Amplifier TOSHIBA 2SJ338 2SK2162
Contextual Info: 2SJ338 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ338 Audio Frequency Power Amplifier Application High breakdown voltage : VDSS = −180 V High forward transfer admittance : |Yfs| = 0.7 S typ. Unit: mm Complementary to 2SK2162 Maximum Ratings (Ta = 25°C)

2SK1155

Abstract: 2SK1156 2SK2114 2SK2115 DSA003639
Contextual Info: 2SK2114, 2SK2115 Silicon N-Channel MOS FET ADE-208-1346 Z 1st. Edition Mar. 2001 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for Switching regulator

DIODE OA10

Abstract: oa10 diode
Contextual Info: bl E D • M ateos 001301b 3T3 IHIT4 2SK213,2SK214. 2SK215,2SK216 H I T A C H I / O P T O E L E C T R O N I C S SILICON N-CHANNEL MOS FET HIGH FREQUENCY ANO LOW FREQUENCY POWER AMPLIFIER. HIGH SPEED SW ITCHING Ed Complementary Pair with 2SJ76, J77, J 7 8 r

2SK2133

Abstract: 2SK2133-Z MP-25
Contextual Info: DATA SHEET MOS FIELD EFFECT POWER TRANSISTORS 2SK2133, 2SK2133-Z SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE PACKAGE DIMENSIONS DESCRIPTION The 2SK2133, 2SK2133-Z are N-channel Power MOS Field Effect Unit : mm Transistors designed for high voltage switching applications.

2SK210

Abstract: marking ADMI
Contextual Info: 2SK210 TOSHIBA TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK210 FM TUNER APPLICATIONS. VHF BAND AMPLIFIER APPLICATIONS. Unit in mm + 0 .5 2 .5 -0 .3 + 0 .2 5 1 .5 - Q l 5 • High Power Gain : Gpg = 24dB Typ. (f = 100MHz) • Low Noise Figure

TEA-1035

Abstract: TEA1035 APPLICATION NOTE TEA-1035 2SK2131 MEI-1202 tea 1035
Contextual Info: DATA SHEET i MOS FIELD EFFECT POWER TRANSISTOR 2SK2131 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2131 is N -channel M O S Field Effect Transistor in m illim eters designed fo r solenoid, m o to r and lam p driver.

2SK2146

Contextual Info: TOSHIBA 2SK2146 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSIII .5 2 S K 2 1 46 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS IN D U ST R IA L A PPLIC A TIO N S U nit in mm CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS

Contextual Info: SHINDENGEN VX-2 Series Power MOSFET 2SK2183 F5V50VX2 N-Channel Enhancement type OUTLINE DIMENSIONS Case Case : E-pack TO-220 (Unit : mm) 500V 5A FEATURES ●Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. ●The static Rds(on) is small.

IDA100

Contextual Info: SHINDENGEN VX-2 Series Power MOSFET 2SK2187 F10S50VX2 N-Channel Enhancement type OUTLINE DIMENSIONS Case : STO-220 Case E-pack (Unit : mm) 500V 10A FEATURES ●Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. ●The static Rds(on) is small.