2SK221 Search Results

Contextual Info: 2SK2213-01L,S N-channel MOS-FET FAP-IIA Series 500V > Features - 0,76Ω 10A 80W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators

2SK2219

Contextual Info: Ordering number:ENN4755 N-Channel Junction Silicon FET 2SK2219 Capacitor Microphone Applications Package Dimensions unit:mm 2058A 0.3 0.2 [2SK2219] 0.15 3 0 to 0.1 0.425 2.1 1.250 • Ultrasmall-sized package permitting 2SK2219applied sets to be made small and slim.

1020C

Abstract: 2SK2212 DSA003639
Contextual Info: 2SK2212 Silicon N-Channel MOS FET ADE-208-1351 Z 1st. Edition Mar. 2001 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No Secondary Breakdown Suitable for Switching regulator, DC-DC converter, Moter Control

Contextual Info: 2SK2212 Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No Secondary Breakdown • Suitable for Switching regulator, DC-DC converter, Moter Control

A2430

Abstract: schematic TV TCL A2428 2SK2215 2SK2215-01 2SK2215-01L T151 c81 004 TV TCL Schematic
Contextual Info: 2SK2215-01L, S FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET FAP-IIA SERIES • Features • H g h speed s w itc h in g • Low o n-resistance • No se condary b reakdow n • Low drivin g p o w e r • Hi jh voltage • V,-; = ± 3 0 V Guarantee • A v a la n c h e -p ro o f

Contextual Info: 2SK2217 Silicon N-Channel MOS FET HITACHI ADE-208-347A 2nd. Edition Application UHF power amplifier Features • High power output, high gain, high efficiency PG = 10 dB , Pout = 60 W, r|D = 55% typ f = 860 M Hz • Compact package Outline ; RFPAK-C 3 _

2SK2212

Abstract: Hitachi DSA00389
Contextual Info: 2SK2212 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No Secondary Breakdown Suitable for Switching regulator, DC-DC converter, Moter Control Outline TO-220FM

2SK2212-E

Abstract: 2SK2212 PRSS0003AD-A c source code motor speed
Contextual Info: 2SK2212 Silicon N Channel MOS FET REJ03G1003-0200 Previous: ADE-208-1351 Rev.2.00 Sep 07, 2005 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter, motor control

2SK2213-01L

Contextual Info: 2SK2213-01L,S N-channel MOS-FET FAP-IIA Series 500V > Features - 0,76Ω 10A 80W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators

2SK2216

Abstract: hitachi FET Hitachi DSA00347
Contextual Info: 2SK2216 Silicon N-Channel MOS FET ADE-208-346A 2nd. Edition Application UHF power amplifier Features • High power output, high gain, high efficiency PG = 9.7 dB, Pout = 140 W, ηD = 55% typ f = 860 MHz • Compact package Suitable for push - pull circuit

Contextual Info: 2SK2210 Power F-MOS FETs 2SK2210 Silicon N-Channel Power F-MOS Unit : mm • Features ● Avalanche energy capability guaranteed ● High-speed ø3.2±0.1 2.9±0.2 secondary breakdown ● Solenoid ● Motor +0.5 ● Non-contact 13.7 -0.2 ■ Applications relay

Contextual Info: FU JI 2SK2213-01L,S N-channel MOS-FET FAP-IIA Series 500V > Features 0 ,7 6 Q 10A 80W > Outline Drawing - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - V gs = ± 30V Guarantee - Avalanche Proof > Applications

grg 250

Abstract: 2SK2218 ITR02610 ITR02611 ITR02612 ITR02613 ITR02614 ITR02615 ITR02616 ITR02617
Contextual Info: 注文コード No. N 5 2 0 2 2SK2218 No. N5202 70999 2SK2218 特長 N チャネル接合形シリコン電界効果トランジスタ 高周波低雑音増幅用 ・FBET プロセス採用。 ・アマチュア無線機用。 ・UHF 帯増幅 , 混合 , 発振用 , アナログスイッチ用。

2SK2211

Contextual Info: Silicon MOS FETs Small Signal 2SK2211 Silicon N-Channel MOS FET For switching Unit: mm 4.5±0.1 • Features 1.6±0.2 1.5±0.1 1.5±0.1 3° 1.0+0.1 –0.2 3 2 0.5±0.08 1 0.4±0.08 2.5±0.1 4.0+0.25 –0.20 ● Low ON-resistance RDS(on) ● High-speed switching

2SK2211

Contextual Info: Silicon MOS FETs Small Signal 2SK2211 Silicon N-Channel MOS FET Unit : mm For switching 1.5±0.1 4.5±0.1 0.4±0.08 2.5±0.1 0.4 max. 45˚ +0.1 • Low ON-resistance RDS(ON) • High-speed switching • Mini-power type package, allowing downsizing of the sets and

2SK2213-01L

Abstract: 2sk2213 2SK2213-01L,S
Contextual Info: 2SK2213-01L,S FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-IIA SERIES 4.5 ±0.2 1.32 3.0 ±0.3 1.5 Max 10 +0.5 9.3 ±0.5 High speed switching Low on-resistance No secondary breakdown Low driving power High voltage VGS=±30V Guarantee Avalanche-proof

2SK2212

Contextual Info: 2SK2212 Silicon N Channel MOS FET Application TO–220FM High speed power switching Features • • • • • Low on–resistance High speed switching Low drive current No Secondary Breakdown Suitable for Switching regulator, DC – DC converter,Motor Control

2SK2211

Contextual Info: Silicon MOS FETs Small Signal 2SK2211 Silicon N-Channel MOS FET For switching unit: mm • Features 0.5±0.08 1.5±0.1 ■ Absolute Maximum Ratings (Ta = 25°C) Parameter * Symbol 2.5±0.1 1.0–0.2 +0.1 0.4±0.08 +0.25 0.4max. 45˚ 4.0–0.20 2.6±0.1 ● Low ON-resistance RDS(on)

Hitachi DSA002781

Contextual Info: 2SK2216 Silicon N-Channel MOS FET ADE-208-346A 2nd. Edition Application UHF power amplifier Features • High power output, high gain, high efficiency PG = 9.7 dB, Pout = 140 W, ηD = 55% typ f = 860 MHz • Compact package Suitable for push - pull circuit

Hitachi DSA002749

Contextual Info: 2SK2212 Silicon N-Channel MOS FET November 1996 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No Secondary Breakdown Suitable for Switching regulator, DC-DC converter, Moter Control

Contextual Info: p u jr i 2SK2215-01 L,S N-channel MOS-FET FAP-IIA Series > Features - 600V 1 ,2 Q 8A 80W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage V gs = ± 30V Guarantee Avalanche Proof > Applications -

IRF 426

Abstract: A2426
Contextual Info: 2SK2213-01L, S FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET FAP-IIA SERIES IOutline Drawings • Features • Hich speed switching • Low on-resistance • No secondary breakdown • Low driving power • Hie h voltage • V GS - ± 3 0 V Guarantee

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon MOSFETs (Small Signal) 2SK2211 Silicon N-channel MOSFET Unit: mm 4.5±0.1 For switching circuits 1.6±0.2 1.5±0.1 1.5±0.1 2.5±0.1 3˚ 3 2 0.5±0.08 1 0.4±0.08 1.0+0.1 –0.2 • Low ON resistance

2SK2212

Abstract: 2SK2212-E PRSS0003AD-A
Contextual Info: 2SK2212 Silicon N Channel MOS FET REJ03G1003-0200 Previous: ADE-208-1351 Rev.2.00 Sep 07, 2005 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter, motor control