2SK2398
Abstract: No abstract text available
Text: 2SK2398 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2398 DC−DC Converter and Motor Drive Applications Low drain−source ON resistance : RDS (ON) = 22 mΩ (typ.) High forward transfer admittance : |Yfs| = 27 S (typ.) Unit: mm
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2SK2398
2SK2398
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K2398
Abstract: jeita sc-65 2SK2398
Text: 2SK2398 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSⅤ 2SK2398 ○ スイッチングレギュレータDC−DC コンバータ用 ○ モータドライブ用 単位: mm : RDS (ON) = 22mΩ (標準) z オン抵抗が低い。
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2SK2398
10VID
SC-65
2-16C1B
K2398
2002/95/EC)
K2398
jeita sc-65
2SK2398
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2SK2398
Abstract: No abstract text available
Text: 2SK2398 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2398 DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 22 mΩ (typ.) z High forward transfer admittance : |Yfs| = 27 S (typ.) Unit: mm
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2SK2398
2SK2398
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2SK2398
Abstract: SC-65
Text: 2SK2398 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2398 DC−DC Converter and Motor Drive Applications z Low drain−source ON-resistance : RDS (ON) = 22 mΩ (typ.) z High forward transfer admittance : |Yfs| = 27 S (typ.) Unit: mm
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2SK2398
2SK2398
SC-65
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K2398
Abstract: 2SK2398
Text: 2SK2398 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2398 DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 22 mΩ (typ.) z High forward transfer admittance : |Yfs| = 27 S (typ.) Unit: mm
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2SK2398
K2398
2SK2398
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k2398
Abstract: 2SK2398
Text: 2SK2398 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2398 DC−DC Converter and Motor Drive Applications l Low drain−source ON resistance : RDS (ON) = 22 mΩ (typ.) l High forward transfer admittance : |Yfs| = 27 S (typ.) Unit: mm
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2SK2398
k2398
2SK2398
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Untitled
Abstract: No abstract text available
Text: 2SK2398 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2398 DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 22 mΩ (typ.) z High forward transfer admittance : |Yfs| = 27 S (typ.) Unit: mm
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2SK2398
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2SK2398
Abstract: No abstract text available
Text: 2SK2398 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2398 DC−DC Converter and Motor Drive Applications Low drain−source ON resistance : RDS (ON) = 22 mΩ (typ.) High forward transfer admittance : |Yfs| = 27 S (typ.) Unit: mm
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2SK2398
2SK2398
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5252 F 1009 4-pin
Abstract: TPC 8028 MARKING S3H SOT363 TK8A50D equivalent tk6a65d equivalent 2SK4112 TPCA8030-H toshiba laptop charging CIRCUIT diagram TK80A08K3 TPCA*8025
Text: 2009-5 PRODUCT GUIDE MOSFETs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4
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2SK2056
Abstract: 2SK1603 2sk1603 datasheet TOSHIBA "ULTRA HIGH SPEED" DIODE 1A transistor 2SK1603 2SK3561 equivalent 2SK2915 EQUIVALENT 1045y 2SK3569 equivalent 2SK1078
Text: O W Y.C M.T .1 O W C W 2005-3 WW .100Y. M.T O W WW .100Y.C M.TW .TW M WW 00Y.CO .TW .CO .TW Y W M .1 W.1 Y.COM W WW 00Y.CO .TW W W W .T 00 W.1 Y.COM W W.1 Y.COM W W W W .T W 00 W M.T .100 W.1 Y.COM W M.T O W O W C . .C W WW .100Y .TW M.T .100 .TW 00Y M O 1
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BCE0017B
2SK2056
2SK1603
2sk1603 datasheet
TOSHIBA "ULTRA HIGH SPEED" DIODE 1A
transistor 2SK1603
2SK3561 equivalent
2SK2915 EQUIVALENT
1045y
2SK3569 equivalent
2SK1078
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2SK3567 equivalent
Abstract: 2SK3569 equivalent TPCA*8023 TK8A50D equivalent 2SK2056 2SK3878 equivalent tpca8023 2SK941 equivalent 2SK3561 equivalent 2SK1603
Text: 2008-9 PRODUCT GUIDE Power MOSFETs s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Toshiba’s power MOSFET devices meet the needs of a wide range of ultra-high-density applications. 1.Features and Structure. 2
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BCE0017F
E-28831
BCE0017G
2SK3567 equivalent
2SK3569 equivalent
TPCA*8023
TK8A50D equivalent
2SK2056
2SK3878 equivalent
tpca8023
2SK941 equivalent
2SK3561 equivalent
2SK1603
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2SK3878 equivalent
Abstract: 2sk2611 2SK3759 2SK3878 2SK3869 2SK2013 toshiba POWER MOS FET 2sj 2sk 2SK3868 2SK3567 equivalent 2SK2718
Text: [ 2 ] Selection Guide [ 2 ] Selection Guide [ 2 ] Selection Guide Power MOSFET Product Line-up ID = 0.5~20 A 1. VDSS (V) 12 16 20 30 40 50 60 100 150 180 ◊2SK2963 (0.7) ▲2SK2962 (0.7) ◊2SJ508 (1.9) ▲2SJ509 (1.9) ▲2SK3670 (1.7) ♦2SJ313 (5.0) ▼2SJ338 (5.0)
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2SK2963
2SK2962
2SJ508
2SJ509
2SK3670
2SJ313
2SJ338
2SK2013
2SK2162
2SJ360
2SK3878 equivalent
2sk2611
2SK3759
2SK3878
2SK3869
2SK2013
toshiba POWER MOS FET 2sj 2sk
2SK3868
2SK3567 equivalent
2SK2718
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IGBT GT30F124
Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
Text: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ
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SCJ0004R
SC-43)
2SC1815
2SC732TM
2SC1959
2SA1015
2SC2240
2SA970
2SC1815
2SA1015
IGBT GT30F124
IGBT GT30J124
GT30F124
GT30J124
GT50N322
tk25e06k3
TPCP8R01
TK12A10K3
GT30G124
2SK3075
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2SK4207
Abstract: to220sis TPCA*8023 tk80A08K3 TPC8119 TK40A08K3 2SK4112 ssm3j16fs 2sk3568 TPC8A03
Text: 製品カタログ 2009-9 東芝半導体 製品カタログ MOSFET SEMICONDUCTOR h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S 1 特長と構造. 3
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BCJ0082B
BCJ0082A
2SK4207
to220sis
TPCA*8023
tk80A08K3
TPC8119
TK40A08K3
2SK4112
ssm3j16fs
2sk3568
TPC8A03
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GT30F124
Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs
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2010/9SCE0004K
SC-43)
2SC1815
700the
GT30F124
TPCP8R01
GT30J124
JAPANESE 2SC TRANSISTOR 2010
smd transistor h2a
smd marking 8L01
tk25e06k3
GT45F122
gt30g124
GT30F123
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IRF540 complementary
Abstract: IRFZ44N complementary std2n52 TOSHIBA IRFZ44A datasheet STP2NA60 SSH6N80 rfp60n06 ste38na50 IRF630 complementary IRF3205 IR
Text: Sales type RFP6N50 RFD16N03LSM RFP15N05L RFP50N05 RFP15N05 RFP50N05L RFD14N05L RFD14N05LSM RFD14N05SM RFP14N05L RFP25N05 RFP14N05 HUF75344P3 HUF75344S3S HUF75345S3S HUF75345G3 HUF75343S3S HUF75307D3S HUF75344G3 HUF75345P3 HUF75343P3 HUF5343G3 HUF75321P3 HUF75329P3
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RFP6N50
RFD16N03LSM
RFP15N05L
RFP50N05
RFP15N05
RFP50N05L
RFD14N05L
RFD14N05LSM
RFD14N05SM
RFP14N05L
IRF540 complementary
IRFZ44N complementary
std2n52
TOSHIBA IRFZ44A datasheet
STP2NA60
SSH6N80
rfp60n06
ste38na50
IRF630 complementary
IRF3205 IR
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transistor bc 245
Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
Text: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243
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SC-43)
2SC1815
TPS615
TPS616
TPS610
transistor bc 245
247Y
smd transistor h2a
gt30g122
gt35j321
GT45F123
MARKING SMD PNP TRANSISTOR h2a
GT45F122
GT45f122 Series
gt30f122
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2SK2398
Abstract: SC-65 transistor N100
Text: TOSHIBA 2SK2398 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M O SV 2SK2398 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm 1 5.9 M A X. • • • • 03.2 ±0.2
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2SK2398
2SK2398
SC-65
transistor N100
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Untitled
Abstract: No abstract text available
Text: TO SHIBA 2SK2398 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M OSV 2SK2398 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm 15.9 MAX. • • • • 0 3 .2 1 0 .2
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2SK2398
lAR--45A,
J--25
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SK2398 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M O SV 2SK2398 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS IN D U S T R IA L A P P L IC A T IO N S DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS Low Drain-Source O N Resistance
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2SK2398
100/zA
165yuH
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SK2398 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M O SV 2SK2398 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm 1 5.9M A X. • • • • Low Drain-Source ON Resistance : Rd S (ON)= 22mQ (Typ.)
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2SK2398
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SK2398 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSV 2 S K2 398 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS 1 5.9MAX. • Low Drain-Souree ON Resistance
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2SK2398
100//A
22mfi
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2SK2398
Abstract: SC-65
Text: T O S H IB A 2SK2398 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSV 2SK2398 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS 1 5.9 M A X . • Low Drain-Source ON Resistance
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2SK2398
SC-65
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2SK2398
Abstract: SC-65
Text: TOSHIBA 2SK2398 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M OSV 2SK2398 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS 1 ^ Q MAY • Low Drain-Source ON Resistance
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2SK2398
2SK2398
SC-65
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