2SK2459N Search Results

parallel MOSFET Transistors

Abstract: 2SK2459N 200v 5A mosfet 2SK245 mosfet 200v mosfet mosfet 5a Transistors
Contextual Info: Transistors Switching 200V, 5A 2SK2459N FFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Gate-source voltage (VGSS) guaranteed to be ±30V. 5) Easily designed drive circuits. 6) Easy to parallel. FStructure Silicon N-channel

2SK245

Abstract: 10C3 251C 2SK2459N CL05 2SK2459
Contextual Info: Transistors Switching 200V, 5A 2SK2459N •F e a tu re s •E x te rn a l dim ensions (Units: mm) 1) Low on-resistance. 2) High-speed switching. 3) W ide SOA (safe operating area). 4) G ate-so urce v o lta g e g u ara ntee d at V g ss = ±30V. 5) Easily designed drive circuits.

2SK2540

Abstract: 2SD2576 2sd2396 TA143E 2SK2459N 2SD 92 M C2N3904 2SB1569A 2SD2061 2SD1189F
Contextual Info: Transistors/^ Leaded Type Quick Reference MOS FET V d ss V 60 100 200 250 300 450 500 600 800 Page b (A) 2 2SK2262 (MRT) 2SK2294 (TO -220FN ) 3 2SK2792 (T 0 -2 2 0 F N ) 4 2SK2459N (TO -220FN ) 5 2SK2460N (T 0-220FN ) 2SK2713 (T 0 -2 2 0 F N ) 2SK2793 (T 0 -2 2 0 F N )

Contextual Info: Transistors Switching 200V, 5A 2SK2459N • F e a tu re s •E x te rn a l dim ensions (Units: mm) 1) Low on-resistance. 2) High-speed switching. 3) W ide SOA (safe operating area). 4) G ate-so urce vo lta g e gu a ra n te e d at V gss = ± 3 0 V . 5) Easily designed drive circuits.

mosfet ftr 03

Abstract: FTR 02 2SK2459N SC-75A mosfet 4501 mosfet 2sk* to-92
Contextual Info: Transistors Switching 200V, 5A 2SK2459N •Features 1) Low on-resistance. 2) High-speed switching. 3) Wide SOA (safe operating area). 4) Gate-source voltage guaranteed at Vqss = ±30V. 5) Easily designed drive circuits. 6) Easy to use in parallel. •External dimensions (Units: mm)

2SK2459

Abstract: 2SK2459N
Contextual Info: Transistors Switching 200V, 5A 2SK2459N •F e a tu re s •E x te rn a l dimensions (Units: mm) 1 ) Low on-resistance. 2) High-speed switching. 3) Wide SOA (safe operating area). 4) G ate-source voltage guaranteed at Voss = ± 3 0 V . 5) Easily designed drive circuits.

STK411-230E

Abstract: STK411-220E stk442-130 PAL005A UPC2581V FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
Contextual Info: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for

rkm 21 transistor

Abstract: RK7002 equivalent 2SK3016 rkm sot-23 rkm transistor sot23 a02 Transistor rkm 45 transistor 2SK2460 rkm 15 transistor RKM SOT
Contextual Info: IN- Transistors n MOS FET 1. Can be used with automatic placement machine. AvarIable In a wade variety o f p a c k a g e s . L i k e b i p o l a r transrstors, taprng versron placement system. IS a l s o available for lines using the automatic 2. MOS FETs operating from 4 volts

2n4401 331

Abstract: 2n4403 331 2n3904 409 2n3904 331 k 2715 2n3906 331 1352s MPSA06 346 2N584 C847B
Contextual Info: Transistors Product List Product List 2N3904 . 614 2S B 2N3906 . 598

2SK2540

Abstract: 2SK2294
Contextual Info: Transistors/Leaded Type Characteristics MOS FET 1. Can be used with automatic placement machines. Available in various packages with taping for automatic placement. 2. MOS FETs operating from 4 volts These MOS FETs can be driven directly by an IC, significantly reducing the number of components buffer transistors .