2SK253 Search Results

2SK2539

Abstract: marking AK
Contextual Info: Ordering number:ENN5075 N-Channel Junction Silicon FET 2SK2539 High-Frequency Amplifier, Analog Switch Applications Package Dimensions • Large | yfs |. · Small Ciss. · Small-sized package permitting 2SK2539-applied sets to be made small and slim. · Adoption of FBET process.

Contextual Info: Ordering number: ENN6406 N-Channel Silicon MOSFET 2SK2530 Ultrahigh-Speed Switching Applications Features • Low ON-resistance. • Ultrahigh-speed switching • Low voltage drive. Package Dimensions unit:mm 2083B 2092B [2SK2530] 2.3 .0.5 0.5 1.2 Oto 0.2.

Contextual Info: 2SK2538 Power F-MOS FETs 2SK2538 Silicon N-Channel Power F-MOS Unit : mm • Features secondary breakdown 16.7±0.3 ● No switching 2.7±0.2 ø3.1±0.1 M Di ain sc te on na tin nc ue e/ d ■ Applications 5.5±0.2 4.2±0.2 ● High-speed 4.2±0.2 10.0±0.2

K2530

Abstract: 2SK2530 64063
Contextual Info: Ordering number:ENN6406 N-Channel Silicon MOSFET 2SK2530 Ultrahigh-Speed Switching Applications Package Dimensions • Low ON-resistance. · Ultrahigh-speed switching. · Low voltage drive. unit:mm 2083B [2SK2530] 2.3 1.5 6.5 5.0 4 0.5 5.5 7.0 Features 1.2

2SK2538

Abstract: PD20W
Contextual Info: 2SK2538 Power F-MOS FETs 2SK2538 Silicon N-Channel Power F-MOS Unit : mm • Features secondary breakdown ■ Applications high-frequency power amplification ■ Absolute Maximum Ratings Tc = 25˚C Parameter Drain-Source breakdown voltage Gate-Source voltage

2SK2531

Contextual Info: 2SK2531 Ordering number : EN8609 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK2531 General-Purpose Switching Device Applications Features • • • Low ON-resistance. High-speed diode. Enables simplified fabrication, high-density mounding, and miniaturization in end products due to the surface mountable

2SK2645-01MR

Contextual Info: MOSFETs FAP-IIS Series - VGS ± 30V, Reduced Turn-Off Time, Improved High Temp Avalanche Ruggedness 450 - 900 Volts Device Type MaximumRaBn V d ss 450 450 450 450 450 2SK2538-01MR 2SK2754-01L,S 2SK2639-01 2SK2756-01R 2SK2755-01 2SK264041M R 500 500 500 iskifst-W

K19 FET

Abstract: EN2539 2SK2539 marking k19 vy 5 fet
Contextual Info: Ordering num ber: EN2539 2SK2539 No.5075 N -Channel Junction Silicon FET SA \YO i High-Frequency Amp, Analog Switch Applications F e a tu r e s • Large I Yfg I . •Sm all Ciss. • Sm all-sized package perm itting 2SK2539-applied sets to be m ade sm all and slim.

2SK2532

Abstract: 54573 EN5457
Contextual Info: 2SK2532 Ordering number : EN5457 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK2532 General-Purpose Switching Device Applications Features • • • Low ON-resistance. High-speed diode. Enables simplified fabrication, high-density mounding, and miniaturization in end products due to the surface mountable

Contextual Info: Panasonic P o w e r F -M O S F E T s 2SK2538 Silicon N-Channel Power F-MOS • Features • Avalanche energy capability guaranteed • High-speed switching • No secondary breakdown ■ Applications • High-speed switching switching mode regulator • For high-frequency power amplification

6AK7

Abstract: 2SK2539 ITR02811 ITR02812 ITR02813 ITR02814 ITR02815 ITR02816 ITR02817 N5075
Contextual Info: 注文コード No. N 5 0 7 5 2SK2539 No. N5075 70999 2SK2539 特長 N チャネル接合形シリコン電界効果トランジスタ 高周波増幅 , アナログスイッチ用 ・yfs が大きい 。 ・Ciss が小さい。 ・小型パッケージであるためセットの小型化 , 薄型化が可能である。

2SK2534

Contextual Info: 2SK2534 Ordering number : EN8612 SANYO Semiconductors DATA SHEET 2SK2534 N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • Low ON-resistance. High-speed switching. Enables simplified fabrication, high-density mounding, and miniaturization in end products due to the surface mountable

Contextual Info: 2SK2533 Ordering number : EN8611 SANYO Semiconductors DATA SHEET 2SK2533 N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • • Low ON-resistance. High-speed diode. Enables simplified fabrication, high-density mounding, and miniaturization in end products due to the surface

2SK2533

Contextual Info: No. 三洋半導体開発速報 特長 暫定規格 NチャネルMOS形シリコン電解効果トランジスタ 超高速スイッチング 2SK2533 ・低オン抵抗。 ・高速ダイオ−ド内蔵。 ・面実装に対応し工数低減およびセットの高密度化、小型化が可能となる。

2SK2538

Contextual Info: 2SK2538 Power F-MOS FETs 2SK2538 Silicon N-Channel Power F-MOS Unit : mm • Features 0.7±0.1 ■ Applications ● High-speed ø3.1±0.1 switching switching mode regulator high-frequency power amplification 14.0±0.5 ● For 2.7±0.2 4.2±0.2 secondary breakdown

2SK2538

Contextual Info: Panasonic Pow er F-M OS FETs 2SK2538 S ilic o n N - C h a n n e l P o w e r F - M O S • Features • Avalanche energy capability guaranteed • High-speed switching • No secondary breakdown ■ Applications • High-speed switching switching mode regulator

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

on line ups circuit diagrams

Abstract: 2SK3850 242M SSFP package K3492 3ln03 MCH3435 CPH5612 three phase on line ups circuit diagrams TN6R04
Contextual Info: Ordering number: EP51E MOSFET Series '05-05 TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN Telephone: 81- 0 3-3837-6339, 6340, 6342, Facsimile: 81-(0)3-3837-6377 ●SANYO Electric Co.,Ltd. Semiconductor company Homepage URL: http://www.semic.sanyo.co.jp/index_e.htm

TN6Q04

Abstract: 2sk4100 2SJ585 2SK4100ls 2SK4101LS INV250 2SK4096LS 2SJ406 2SK3745LS 2SJ584
Contextual Info: SANYO Power Transistors Bipolar Transistor Series & Schottky Barrier Diode Series CONTENTS 2ĝ5 ŝTO-220MF Package 6 ŝTO-220FI Package ŝLow-saturation Voltage Transistors 7 ŝTO-220FI5H Package 14 ŝHorizontal Deflection Output Use 8 ŝTO-220ML Package 15

J289

Abstract: 3SK266 2SK1728 3sk251 DS-17 SANYO
Contextual Info: SAftYO Small-signal MOSFETs Feat, u r e s ♦ Very low noise figure * Large IYf s I * Low gate leak current Sma11-sized package permitting FET-used sets to be made smaller Case Out 1inesiunit:mm SANYO:CP4 x Lr Amp, Low Noise, Analog Switch Impedance Conversion Applications

2SK243-2

Abstract: SBA160-04ZP 2SJ454 2SK2432 2SK243-4 2SK2436 2sk2533 2SJ456
Contextual Info: :m ! • ■ Features ZP package w ith surface m ount area reduced by approxim ately 20%, and thickness by approxim ately 40%, com pared to :hs package S tep-sectioned lead-fram e structure to e lim inate so ld e r bridging resulting in high-quality surface m ounting

2SK2683

Abstract: 2sk2680
Contextual Info: • AP Series Lineup New H-IIF Series FRD built-in VDSS = 250V, P-channel Absolute rwudraum rating« a»Ta = 25CC Type No. 2SJ4S3 Package V058 (V) voas (V) TP 2SJ454 2SJ455 250 V«S(Cffl >0 (A) nrintomax w 2SJ456 (V) Bos (on) typ m ax st l¥f»l Clss <s>

k669 transistor

Abstract: k544 K932 transistor mosfet k544 k427 transistor k583 k427 K932 k222 mosfet k546
Contextual Info: SAfÊYO Small-signal Junction FETs/MOSFETs F e a tu re s Case O u tlin e s unit.'m m SANYO:SMCP 1 : S ource, 2 : Drá i n, 3 : Ga te * V e r y low n o is e f ig u r e * L arge |Y f s | * Low g a te le a k c u r r e n t * S m a ll-s iz e d package p e r m ittin g FET-used s e t s to be made s m a lle r

2sk3436

Abstract: 2Sa1872 2sc6093 2SC4943 2sa1970 2SK3850 2SK1597 TT2084 2sc5267 2sk3744
Contextual Info: Ordering number : E I 0 1 3 8 Announcement Regarding Discontinuation and Limited Availability of Discrete Devices Thank you for using SANYO semiconductor products. The following SANYO semiconductor products will be available to existing customers on a limited basis