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    2SK259 Price and Stock

    Panasonic Electronic Components 2SK2593JQL

    JFET N-CH 30MA SSMINI3-F1
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    Rochester Electronics LLC 2SK2595AXTB-E

    N-CHANNEL POWER MOSFET
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    DigiKey 2SK2595AXTB-E Bulk 33
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    Rochester Electronics LLC 2SK2596BXTL-E

    MOSFET N-CH
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    DigiKey 2SK2596BXTL-E Bulk 158
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    Renesas Electronics Corporation 2SK2595AXTB-E

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    Avnet Americas 2SK2595AXTB-E Bulk 4 Weeks 40
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    Rochester Electronics 2SK2595AXTB-E 13,000 1
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    Renesas Electronics Corporation 2SK2596BXTL-E

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    Rochester Electronics 2SK2596BXTL-E 6,900 1
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    2SK259 Datasheets (67)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2SK259 Hitachi Semiconductor Power Transistors Data Book Scan PDF
    2SK259 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2SK259 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2SK259 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SK259 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2SK259 Siliconix MOSPOWER Design Data Book 1983 Scan PDF
    2SK2590 Hitachi Semiconductor Mosfet Guide Original PDF
    2SK2590 Hitachi Semiconductor Silicon N-Channel MOS FET Original PDF
    2SK2590 Hitachi Semiconductor Silicon N-Channel MOS FET Original PDF
    2SK2590 Renesas Technology Silicon N Channel MOS FET Original PDF
    2SK2590 Renesas Technology Silicon N Channel MOS FET Original PDF
    2SK2590 Renesas Technology Silicon N-Channel MOS FET Original PDF
    2SK2590 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SK2590-E Renesas Technology Silicon N Channel MOS FET Original PDF
    2SK2591 Hitachi Semiconductor Mosfet Guide Original PDF
    2SK2591 Renesas Technology Silicon N-Channel MOS FET Original PDF
    2SK2592 Sanyo Semiconductor Ultra High Speed Switching Transistors Scan PDF
    2SK2592 Sanyo Semiconductor Large Signal Power MOSFETS Scan PDF
    2SK2593 Panasonic FETs, IPD, IGBTs, GaAs MMICs Original PDF
    2SK2593 Panasonic Silicon N-Channel Junction FET Original PDF

    2SK259 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    k2599

    Abstract: 2SK2599
    Text: 2SK2599 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2599 Chopper Regulator, DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance Unit: mm : RDS (ON) = 2.9 Ω (typ.) z High forward transfer admittance


    Original     		PDF 2SK2599 k2599 2SK2599

    2SK2590

    Abstract: 2SK1957 Hitachi DSA00116
    Text: 2SK2590 Silicon N Channel MOS FET Application TO–220AB High speed power switching Features D 2 • • • • • Low on–resistance High speed switching Low drive current No Secondary Breakdown Suitable for Switching regulator, DC – DC converter, Motor Control


    Original     		PDF 2SK2590 220AB 2SK2590 2SK1957 Hitachi DSA00116

    Hitachi DSA001651

    Abstract: No abstract text available
    Text: 2SK2591 Silicon N-Channel MOS FET Preliminary November 1996 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter


    Original     		PDF 2SK2591 O-220CFM Hitachi DSA001651

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK2593G Silicon N-channel junction FET For low-frequency amplification For switching circuits • Features ■ Package • Low noise figure NF • High gate-drain voltage (source open) VGDO


    Original     		PDF 2002/95/EC) 2SK2593G

    2SK2593

    Abstract: SC-89
    Text: Silicon Junction FETs Small Signal 2SK2593 Silicon N-Channel Junction FET For low-frequency amplification For switching M Di ain sc te on na tin nc ue e/ d unit: mm 0.12+0.05 – 0.02 0.28±0.05 (0.51) (0.51) (0.80) (0.80) 0.60+0.05 – 0.03 1.60+0.05 – 0.03


    Original     		PDF 2SK2593 2SK2593 SC-89

    2sk2596

    Abstract: Hitachi DSA00307
    Text: 2SK2596 Silicon N-Channel MOS FET UHF Power Amplifier 1st. Edition Features • High power output, High gain, High efficiency PG = 12.2dB, Pout = 30.2dBm, ηD = 45 %min. f = 836.5MHz • Compact package capable of surface mounting Outline This Device is sensitive to Elector Static Discharge.


    Original     		PDF 2SK2596 2sk2596 Hitachi DSA00307

    2SK2596

    Abstract: 2SK2596BXTL-E
    Text: 2SK2596 Silicon N-Channel MOS FET UHF Power Amplifier REJ03G0207-0400 Rev.4.00 Nov 08, 2007 Features • High power output, High gain, High efficiency PG = 12.2 dB, Pout = 1.05 W, ηD = 45%min. f = 836.5 MHz • Compact package capable of surface mounting


    Original     		PDF 2SK2596 REJ03G0207-0400 PLZZ0004CA-A 2SK2596 2SK2596BXTL-E

    k2599

    Abstract: 2SK2599
    Text: 2SK2599 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSⅤ 2SK2599 ○ スイッチングレギュレータDC−DC コンバータ用 ○ モータドライブ用 単位: mm : RDS (ON) = 2.9Ω (標準) z オン抵抗が低い。


    Original     		PDF 2SK2599 10VID VDD400V, K2599 20070701-JA k2599 2SK2599

    Untitled

    Abstract: No abstract text available
    Text: 2SK2590 Silicon N Channel MOS FET REJ03G1021-0300 Previous: ADE-208-1365A Rev.3.00 Sep 07, 2005 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter, motor control


    Original     		PDF 2SK2590 REJ03G1021-0300 ADE-208-1365A) PRSS0004AC-A O-220AB)

    NEC 9001

    Abstract: 2SK2597 J549 NEC MOSFET PUSHPULL
    Text: PRELIMINARY DATA SHEET SILICON POWER MOS FIELD EFFECT TRANSISTOR 2SK2597 N-CHANNEL SILICON POWER MOSFET FOR BASE STATION OF 900 MHz BAND CELLULAR PHONE POWER AMPLIFICATION PACKAGE DRAWING Unit: mm • High output, high gain PO = 100 W, GL = 13 dB (TYP.) (f = 900 MHz)


    Original     		PDF 2SK2597 800-MHz NEC 9001 2SK2597 J549 NEC MOSFET PUSHPULL

    Untitled

    Abstract: No abstract text available
    Text: 2SK2593 Silicon Junction FETs Small Signal 2SK2593 Silicon N-Channel Junction Unit : mm For low-frequency amplification For switching 1.6±0.15 ● High gate-drain voltage VGDO ● Downsizing 0.4 +0.1 0.2 -0.05 0.8±0.1 1 3 0.5 noise, high gain 1.0±0.1


    Original     		PDF 2SK2593

    Hitachi DSA0076

    Abstract: 2SK2595
    Text: 2SK2595 Silicon N-Channel MOS FET UHF Power Amplifier ADE-208-1366 Z 1st. Edition Mar. 2001 Features • High power output, High gain, High efficiency PG = 7.8dB, Pout = 37.3dBm, ηD = 50 %min. (f = 836.5MHz) • Compact package capable of surface mounting


    Original     		PDF 2SK2595 ADE-208-1366 Hitachi DSA0076 2SK2595

    Hitachi DSA001652

    Abstract: No abstract text available
    Text: 2SK2590 Silicon N-Channel MOS FET Preliminary Nov. 1, 1996 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No Secondary Breakdown Suitable for Switching regulator, DC-DC converter, Motor Control


    Original     		PDF 2SK2590 O-220AB D-85622 Hitachi DSA001652

    2SK2598

    Abstract: No abstract text available
    Text: 2SK2598 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2598 Chopper Regulator, DC−DC Converter and Motor Drive Applications Low drain−source ON resistance : RDS (ON) = 0.18 Ω (typ.) High forward transfer admittance : |Yfs| = 13 S (typ.)


    Original     		PDF 2SK2598 2SK2598

    k2599

    Abstract: 2SK2599 K259
    Text: 2SK2599 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2599 Chopper Regulator, DC−DC Converter and Motor Drive Applications z Low drain−source ON-resistance Unit: mm : RDS (ON) = 2.9 Ω (typ.) z High forward transfer admittance


    Original     		PDF 2SK2599 k2599 2SK2599 K259

    Untitled

    Abstract: No abstract text available
    Text: 2SK2590 Silicon N-Channel MOS FET HITACHI Preliminary Nov. 1, 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No Secondary Breakdown • Suitable for Switching regulator, DC-DC converter, Motor Control


    OCR Scan     		PDF 2SK2590

    Transistor D 2599

    Abstract: No abstract text available
    Text: TO SH IB A 2SK 2599 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M OSV] 2SK2599 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm 1. Low Drain-Sorce ON Resistance : R d S(ON = 2.9H (Typ.)


    OCR Scan     		PDF 2SK2599 100//A Transistor D 2599

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SK2598 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M O SV 2SK2598 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS TO-22QFL U nit in mm CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS •


    OCR Scan     		PDF 2SK2598 O-22QFL

    2SK2598

    Abstract: No abstract text available
    Text: T O S H IB A 2SK2598 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M OSV 2SK2598 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS TO-22QFL U nit in mm CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS


    OCR Scan     		PDF 2SK2598 2SK2598

    2SK2596

    Abstract: pd4555
    Text: 2SK2596 Silicon N-Channel MOS FET UHF Power Amplifier HITACHI 1st. Edition Features • High power output, High gain. High efficiency PG = 12.2dB, Pout = 30.2dBm , -qD = 45 %min. f = 836.5M H z • Compact package capable o f surface mounting Outline UPAK


    OCR Scan     		PDF 2SK2596 2SK2596 pd4555

    2SK2598

    Abstract: No abstract text available
    Text: TOSHIBA 2SK2598 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M O SV 2SK2598 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS TO-22QFL Unit in mm CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS •


    OCR Scan     		PDF 2SK2598

    2sk2599

    Abstract: No abstract text available
    Text: TO SH IB A 2SK2599 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M OSV 2SK2599 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS • Low Drain-Sorce ON Resistance


    OCR Scan     		PDF 2SK2599 2sk2599

    NEC MOSFET PUSHPULL

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET SILICON POWER MOS FIELD EFFECT TRANSISTOR 2SK2597 N-CHANNEL SILICON POWER MOSFET FOR BASE STATION OF 900 MHz BAND CELLULAR PHONE POWER AMPLIFICATION FEATURES • PACKAGE DRAWING Unit: mm • • • High output, high gain Po = 100 W, G l = 13 dB (TYP.) (f = 900 MHz)


    OCR Scan     		PDF 2SK2597 800-MHz NEC MOSFET PUSHPULL

    2SK2599

    Abstract: No abstract text available
    Text: TOSHIBA 2SK2599 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M OSV 2SK2599 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS IN D U S T R IA L A P P L IC A T IO N S U n it in mm CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE 8.0 ± 0.2


    OCR Scan     		PDF 2SK2599 2SK2599