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Panasonic Electronic Components 2SK2593JQL JFET N-CH 30MA SSMINI3-F1
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DigiKey	2SK2593JQL	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Rochester Electronics LLC 2SK2595AXTB-E N-CHANNEL POWER MOSFET
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DigiKey	2SK2595AXTB-E	Bulk			33	1 - 10 - 100 $9.1 1000 $9.1 10000 $9.1	Buy Now
Rochester Electronics LLC 2SK2596BXTL-E MOSFET N-CH
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DigiKey	2SK2596BXTL-E	Bulk			158	1 - 10 - 100 - 1000 $1.9 10000 $1.9	Buy Now
Renesas Electronics Corporation 2SK2595AXTB-E Trans RF MOSFET N-CH 17V 1.1A 3-Pin RP8P T/R
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Verical	2SK2595AXTB-E		13,000		35	1 - 10 - 100 $10.2875 1000 $9.3 10000 $9.3	Buy Now
Rochester Electronics	2SK2595AXTB-E		13,000		1	1 $8.75 10 $8.75 100 $8.23 1000 $7.44 10000 $7.44	Buy Now
Renesas Electronics Corporation 2SK2596BXTL-E 2SK2596BXTL-E
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Verical	2SK2596BXTL-E		6,900		175	1 - 10 - 100 - 1000 $1.95 10000 $1.95	Buy Now
Rochester Electronics	2SK2596BXTL-E		6,900		1	1 $1.83 10 $1.83 100 $1.72 1000 $1.56 10000 $1.56	Buy Now

2SK259 Datasheets (67)

Part	Manufacturer	Description	Datasheet Type	PDF
2SK259	Hitachi Semiconductor	Power Transistors Data Book	Scan	PDF
2SK259	Unknown	Semiconductor Master Cross Reference Guide	Scan	PDF
2SK259	Unknown	Semiconductor Master Cross Reference Guide	Scan	PDF
2SK259	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
2SK259	Unknown	Shortform Datasheet & Cross References Data	Short Form	PDF
2SK259	Siliconix	MOSPOWER Design Data Book 1983	Scan	PDF
2SK2590	Hitachi Semiconductor	Mosfet Guide	Original	PDF
2SK2590	Hitachi Semiconductor	Silicon N-Channel MOS FET	Original	PDF
2SK2590	Hitachi Semiconductor	Silicon N-Channel MOS FET	Original	PDF
2SK2590	Renesas Technology	Silicon N Channel MOS FET	Original	PDF
2SK2590	Renesas Technology	Silicon N Channel MOS FET	Original	PDF
2SK2590	Renesas Technology	Silicon N-Channel MOS FET	Original	PDF
2SK2590	Unknown	Shortform Data and Cross References (Misc Datasheets)	Short Form	PDF
2SK2590-E	Renesas Technology	Silicon N Channel MOS FET	Original	PDF

2SK2591	Hitachi Semiconductor	Mosfet Guide	Original	PDF
2SK2591	Renesas Technology	Silicon N-Channel MOS FET	Original	PDF
2SK2592	Sanyo Semiconductor	Ultra High Speed Switching Transistors	Scan	PDF
2SK2592	Sanyo Semiconductor	Large Signal Power MOSFETS	Scan	PDF
2SK2593	Panasonic	FETs, IPD, IGBTs, GaAs MMICs	Original	PDF
2SK2593	Panasonic	Silicon N-Channel Junction FET	Original	PDF

2SK259 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
k2599 Abstract: 2SK2599 Text: 2SK2599 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2599 Chopper Regulator, DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance Unit: mm : RDS (ON) = 2.9 Ω (typ.) z High forward transfer admittance	Original	PDF	2SK2599 k2599 2SK2599
2SK2590 Abstract: 2SK1957 Hitachi DSA00116 Text: 2SK2590 Silicon N Channel MOS FET Application TO–220AB High speed power switching Features D 2 • • • • • Low on–resistance High speed switching Low drive current No Secondary Breakdown Suitable for Switching regulator, DC – DC converter, Motor Control	Original	PDF	2SK2590 220AB 2SK2590 2SK1957 Hitachi DSA00116
Hitachi DSA001651 Abstract: No abstract text available Text: 2SK2591 Silicon N-Channel MOS FET Preliminary November 1996 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter	Original	PDF	2SK2591 O-220CFM Hitachi DSA001651
Untitled Abstract: No abstract text available Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK2593G Silicon N-channel junction FET For low-frequency amplification For switching circuits • Features ■ Package • Low noise figure NF • High gate-drain voltage (source open) VGDO	Original	PDF	2002/95/EC) 2SK2593G
2SK2593 Abstract: SC-89 Text: Silicon Junction FETs Small Signal 2SK2593 Silicon N-Channel Junction FET For low-frequency amplification For switching M Di ain sc te on na tin nc ue e/ d unit: mm 0.12+0.05 – 0.02 0.28±0.05 (0.51) (0.51) (0.80) (0.80) 0.60+0.05 – 0.03 1.60+0.05 – 0.03	Original	PDF	2SK2593 2SK2593 SC-89
2sk2596 Abstract: Hitachi DSA00307 Text: 2SK2596 Silicon N-Channel MOS FET UHF Power Amplifier 1st. Edition Features • High power output, High gain, High efficiency PG = 12.2dB, Pout = 30.2dBm, ηD = 45 %min. f = 836.5MHz • Compact package capable of surface mounting Outline This Device is sensitive to Elector Static Discharge.	Original	PDF	2SK2596 2sk2596 Hitachi DSA00307
2SK2596 Abstract: 2SK2596BXTL-E Text: 2SK2596 Silicon N-Channel MOS FET UHF Power Amplifier REJ03G0207-0400 Rev.4.00 Nov 08, 2007 Features • High power output, High gain, High efficiency PG = 12.2 dB, Pout = 1.05 W, ηD = 45%min. f = 836.5 MHz • Compact package capable of surface mounting	Original	PDF	2SK2596 REJ03G0207-0400 PLZZ0004CA-A 2SK2596 2SK2596BXTL-E
k2599 Abstract: 2SK2599 Text: 2SK2599 東芝電界効果トランジスタシリコンNチャネルMOS形 π−MOSⅤ 2SK2599 ○ スイッチングレギュレータDC−DC コンバータ用 ○ モータドライブ用単位: mm : RDS (ON) = 2.9Ω (標準) z オン抵抗が低い。	Original	PDF	2SK2599 10VID VDD400V, K2599 20070701-JA k2599 2SK2599
Untitled Abstract: No abstract text available Text: 2SK2590 Silicon N Channel MOS FET REJ03G1021-0300 Previous: ADE-208-1365A Rev.3.00 Sep 07, 2005 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter, motor control	Original	PDF	2SK2590 REJ03G1021-0300 ADE-208-1365A) PRSS0004AC-A O-220AB)
NEC 9001 Abstract: 2SK2597 J549 NEC MOSFET PUSHPULL Text: PRELIMINARY DATA SHEET SILICON POWER MOS FIELD EFFECT TRANSISTOR 2SK2597 N-CHANNEL SILICON POWER MOSFET FOR BASE STATION OF 900 MHz BAND CELLULAR PHONE POWER AMPLIFICATION PACKAGE DRAWING Unit: mm • High output, high gain PO = 100 W, GL = 13 dB (TYP.) (f = 900 MHz)	Original	PDF	2SK2597 800-MHz NEC 9001 2SK2597 J549 NEC MOSFET PUSHPULL
Untitled Abstract: No abstract text available Text: 2SK2593 Silicon Junction FETs Small Signal 2SK2593 Silicon N-Channel Junction Unit : mm For low-frequency amplification For switching 1.6±0.15 ● High gate-drain voltage VGDO ● Downsizing 0.4 +0.1 0.2 -0.05 0.8±0.1 1 3 0.5 noise, high gain 1.0±0.1	Original	PDF	2SK2593
Hitachi DSA0076 Abstract: 2SK2595 Text: 2SK2595 Silicon N-Channel MOS FET UHF Power Amplifier ADE-208-1366 Z 1st. Edition Mar. 2001 Features • High power output, High gain, High efficiency PG = 7.8dB, Pout = 37.3dBm, ηD = 50 %min. (f = 836.5MHz) • Compact package capable of surface mounting	Original	PDF	2SK2595 ADE-208-1366 Hitachi DSA0076 2SK2595
Hitachi DSA001652 Abstract: No abstract text available Text: 2SK2590 Silicon N-Channel MOS FET Preliminary Nov. 1, 1996 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No Secondary Breakdown Suitable for Switching regulator, DC-DC converter, Motor Control	Original	PDF	2SK2590 O-220AB D-85622 Hitachi DSA001652
2SK2598 Abstract: No abstract text available Text: 2SK2598 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2598 Chopper Regulator, DC−DC Converter and Motor Drive Applications Low drain−source ON resistance : RDS (ON) = 0.18 Ω (typ.) High forward transfer admittance : \|Yfs\| = 13 S (typ.)	Original	PDF	2SK2598 2SK2598

k2599 Abstract: 2SK2599 K259 Text: 2SK2599 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2599 Chopper Regulator, DC−DC Converter and Motor Drive Applications z Low drain−source ON-resistance Unit: mm : RDS (ON) = 2.9 Ω (typ.) z High forward transfer admittance	Original	PDF	2SK2599 k2599 2SK2599 K259
Untitled Abstract: No abstract text available Text: 2SK2590 Silicon N-Channel MOS FET HITACHI Preliminary Nov. 1, 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No Secondary Breakdown • Suitable for Switching regulator, DC-DC converter, Motor Control	OCR Scan	PDF	2SK2590
Transistor D 2599 Abstract: No abstract text available Text: TO SH IB A 2SK 2599 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M OSV] 2SK2599 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm 1. Low Drain-Sorce ON Resistance : R d S(ON = 2.9H (Typ.)	OCR Scan	PDF	2SK2599 100//A Transistor D 2599
Untitled Abstract: No abstract text available Text: TOSHIBA 2SK2598 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M O SV 2SK2598 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS TO-22QFL U nit in mm CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS •	OCR Scan	PDF	2SK2598 O-22QFL
2SK2598 Abstract: No abstract text available Text: T O S H IB A 2SK2598 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M OSV 2SK2598 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS TO-22QFL U nit in mm CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS	OCR Scan	PDF	2SK2598 2SK2598
2SK2596 Abstract: pd4555 Text: 2SK2596 Silicon N-Channel MOS FET UHF Power Amplifier HITACHI 1st. Edition Features • High power output, High gain. High efficiency PG = 12.2dB, Pout = 30.2dBm , -qD = 45 %min. f = 836.5M H z • Compact package capable o f surface mounting Outline UPAK	OCR Scan	PDF	2SK2596 2SK2596 pd4555
2SK2598 Abstract: No abstract text available Text: TOSHIBA 2SK2598 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M O SV 2SK2598 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS TO-22QFL Unit in mm CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS •	OCR Scan	PDF	2SK2598
2sk2599 Abstract: No abstract text available Text: TO SH IB A 2SK2599 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M OSV 2SK2599 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS • Low Drain-Sorce ON Resistance	OCR Scan	PDF	2SK2599 2sk2599
NEC MOSFET PUSHPULL Abstract: No abstract text available Text: PRELIMINARY DATA SHEET SILICON POWER MOS FIELD EFFECT TRANSISTOR 2SK2597 N-CHANNEL SILICON POWER MOSFET FOR BASE STATION OF 900 MHz BAND CELLULAR PHONE POWER AMPLIFICATION FEATURES • PACKAGE DRAWING Unit: mm • • • High output, high gain Po = 100 W, G l = 13 dB (TYP.) (f = 900 MHz)	OCR Scan	PDF	2SK2597 800-MHz NEC MOSFET PUSHPULL
2SK2599 Abstract: No abstract text available Text: TOSHIBA 2SK2599 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M OSV 2SK2599 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS IN D U S T R IA L A P P L IC A T IO N S U n it in mm CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE 8.0 ± 0.2	OCR Scan	PDF	2SK2599 2SK2599

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2SK259 Search Results

2SK259 Price and Stock

Panasonic Electronic Components 2SK2593JQL

Rochester Electronics LLC 2SK2595AXTB-E

Rochester Electronics LLC 2SK2596BXTL-E

Renesas Electronics Corporation 2SK2595AXTB-E

Renesas Electronics Corporation 2SK2596BXTL-E

2SK259 Datasheets (67)

2SK259 Datasheets Context Search

k2599

2SK2590

Hitachi DSA001651

Untitled

2SK2593

2sk2596

2SK2596

k2599

Untitled

NEC 9001

Untitled

Hitachi DSA0076

Hitachi DSA001652

2SK2598

k2599

Untitled

Transistor D 2599

Untitled

2SK2598

2SK2596

2SK2598

2sk2599

NEC MOSFET PUSHPULL

2SK2599