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    2SK260 Search Results

    2SK260 Datasheets (66)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    2SK260
    Hitachi Semiconductor Power Transistors Data Book Scan PDF 127.11KB 1
    2SK260
    Unknown Semiconductor Master Cross Reference Guide Scan PDF 128.51KB 1
    2SK260
    Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF 101.94KB 1
    2SK260
    Unknown Shortform Datasheet & Cross References Data Short Form PDF 81.62KB 1
    2SK260
    Siliconix MOSPOWER Design Data Book 1983 Scan PDF 42.69KB 1
    2SK2600
    Toshiba Power MOSFETs Cross Reference Guide Original PDF 165.78KB 67
    2SK2600
    Toshiba Original PDF 44.05KB 9
    2SK2601
    Toshiba SILICON N CHANNEL MOS TYPE, FIELD EFFECT TRANSISTO Original PDF 419.32KB 6
    2SK2601
    Toshiba Power MOSFETs Cross Reference Guide Original PDF 165.78KB 67
    2SK2601
    Toshiba Power MOSFET Selection Guide with Cross Reference Data Original PDF 1.45MB 45
    2SK2601
    Toshiba Original PDF 44.05KB 9
    2SK2601
    Toshiba N-Channel Enhancement MOSFET Scan PDF 285.42KB 5
    2SK2601(F)
    Toshiba 2SK2601 - MOSFET N-CH 500V 10A 2-16C1B Original PDF 424.36KB 6
    2SK2602
    Toshiba Power MOSFETs Cross Reference Guide Original PDF 165.78KB 67
    2SK2602
    Toshiba N-Channel MOSFET Original PDF 413.66KB 6
    2SK2602
    Toshiba Power MOSFET Selection Guide with Cross Reference Data Original PDF 1.45MB 45
    2SK2602
    Toshiba Original PDF 44.05KB 9
    2SK2602
    Toshiba Field Effect Transistor Silicon N Channel MOS Type Scan PDF 310.09KB 5
    2SK2602
    Toshiba Silicon N channel field effect transistor for high speed, high voltage switching applications, switching regulator applications Scan PDF 278.02KB 5
    2SK2602(F,T)
    Toshiba 2SK2602 - MOSFET N-CH 600V 6A 2-16C1B Original PDF 418.29KB 6
    SF Impression Pixel

    2SK260 Price and Stock

    Toshiba America Electronic Components

    Toshiba America Electronic Components 2SK2605(Q) STM CODE

    2SK2605(Q) STM CODE
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Verical 2SK2605(Q) STM CODE 20,000 20,000
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    Toshiba America Electronic Components 2SK2606(F)

    Trans MOSFET N-CH Si 800V 8A 3-Pin(3+Tab) TO-3P(N)IS
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Verical 2SK2606(F) 6 6
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    • 10 $12.72
    • 100 $12.72
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    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics 2SK2605 364
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    Quest Components 2SK2605 291
    • 1 $14.98
    • 10 $14.98
    • 100 $11.65
    • 1000 $10.66
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    ComSIT USA 2SK2605 372
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    Toshiba America Electronic Components 2SK2601(PP,F)

    POWER FIELD-EFFECT TRANSISTOR, N-CHANNEL, METAL-OXIDE SEMICONDUCTOR FET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 2SK2601(PP,F) 71
    • 1 $3.24
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    • 100 $1.78
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    Toshiba America Electronic Components 2SK2604

    5 A, 800 V, 2.2 OHM, N-CHANNEL, SI, POWER, MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 2SK2604 5
    • 1 $16.00
    • 10 $12.00
    • 100 $12.00
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    ComSIT USA 2SK2604 8,268
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    2SK260 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: 2SK2605 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII 2SK2605 Switching Regulator Applications Unit: mm Low drain−source ON resistance : RDS (ON) = 1.9 Ω (typ.) High forward transfer admittance : |Yfs| = 3.8 S (typ.) Low leakage current


    Original
    2SK2605 PDF

    2-10P1B

    Abstract: 2SK2608
    Contextual Info: TOSHIBA 2SK2608 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSIII 2SK2608 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS SWITCHING REGULATOR APPLICATIONS • Low Drain-Sorce ON Resistance : Rd S (ON)“ 3.730 (Typ.)


    OCR Scan
    2SK2608 2-10P1B PDF

    K2608

    Abstract: 2SK2608 2-10P1B
    Contextual Info: 2SK2608 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSⅢ 2SK2608 ○ スイッチングレギュレータ用 単位: mm z オン抵抗が低い。 : RDS (ON) = 3.73Ω (標準) z 順方向伝達アドミタンスが高い。 : |Yfs| = 2.6 S (標準)


    Original
    2SK2608 O-220AB SC-46 2-10P1B K2608 2002/95/EC) K2608 2SK2608 2-10P1B PDF

    K2606

    Abstract: 2SK2606
    Contextual Info: 2SK2606 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII 2SK2606 DC−DC Converter, Relay Drive and Motor Drive Applications Unit: mm z Low drain−source ON resistance : RDS (ON) = 1.0 Ω (typ.) z High forward transfer admittance


    Original
    2SK2606 K2606 2SK2606 PDF

    K2602

    Abstract: 2SK2602 SC-65 transistor marking 6A
    Contextual Info: TOSHIBA 2SK2602 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M O SV 2SK2602 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS SWITCHING REGULATOR APPLICATIONS Low Drain-Sorce ON Resistance : Rd S (O N )~ 0.9O (Typ.)


    OCR Scan
    2SK2602 K2602 2SK2602 SC-65 transistor marking 6A PDF

    K2601

    Abstract: 2SK2601 SC-65
    Contextual Info: T O S H IB A 2SK2601 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSV 2SK2601 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS IN D U S T R IA L A P P L IC A T IO N S U n it in mm DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS


    OCR Scan
    2SK2601 K2601 2SK2601 SC-65 PDF

    Contextual Info: TO SHIBA 2SK2607 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSHI i ^ \ci a n 7 MF • ». m HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS • Low Drain-Source ON Resistance


    OCR Scan
    2SK2607 20kfl) PDF

    K2607 TOSHIBA

    Abstract: 2SK2607 K2607 toshiba K2607 SC-65 VNQ marking MOS *k2607
    Contextual Info: TOSHIBA 2SK2607 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSIII 2SK2607 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS 1 5.9MAX. Low Drain-Source ON Resistance


    OCR Scan
    2SK2607 K2607 TOSHIBA 2SK2607 K2607 toshiba K2607 SC-65 VNQ marking MOS *k2607 PDF

    K2607

    Abstract: toshiba K2607 K2607 TOSHIBA K2607 transistor transistor k2607 toshiba transistor k2607 2SK2607 TOSHIBA 2SK2607 SC-65
    Contextual Info: 2SK2607 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII 2SK2607 Chopper Regulator, DC−DC Converter and Moter Drive Applications Low drain−source ON resistance : RDS (ON) = 1.0 Ω (typ.) High forward transfer admittance : |Yfs|= 7.0 S (typ.)


    Original
    2SK2607 K2607 toshiba K2607 K2607 TOSHIBA K2607 transistor transistor k2607 toshiba transistor k2607 2SK2607 TOSHIBA 2SK2607 SC-65 PDF

    K2604

    Abstract: toshiba k2604 toshiba transistor k2604 2SK2604
    Contextual Info: 2SK2604 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII 2SK2604 Switching Regulator Applications Unit: mm z Low drain−source ON resistance : RDS (ON) = 1.9 Ω (typ.) z High forward transfer admittance : |Yfs| = 3.8 S (typ.) z Low leakage current


    Original
    2SK2604 K2604 toshiba k2604 toshiba transistor k2604 2SK2604 PDF

    K2601

    Abstract: 2SK2601 SC-65
    Contextual Info: T O S H IB A 2SK2601 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M O S V 2SK2601 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm 1 ^ Q MAY •


    OCR Scan
    2SK2601 K2601 2SK2601 SC-65 PDF

    2-10P1B

    Abstract: 2SK2608
    Contextual Info: TOSHIBA 2SK2608 SILICON N CHANNEL MOS TYPE tt-MOSIII 2SK2608 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS SWITCHING REGULATOR APPLICATIONS Low Drain-Sorce ON Resistance : RßS (ON) = 3.73 ü, (Typ.) High Forward Transfer Admittance : |Yfs| = 2.6 S (Typ.)


    OCR Scan
    2SK2608 2-10P1B 2SK2608 PDF

    toshiba K2601

    Abstract: K2601 toshiba transistor k2601 2SK2601 SC-65 toshiba 2-16c1b
    Contextual Info: 2SK2601 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2601 DC−DC Converter, Relay Drive and Motor Drive Applications z Low drain−source ON-resistance : RDS (ON) = 0.56 Ω (typ.) z High forward transfer admittance : |Yfs| = 7.0 S (typ.)


    Original
    2SK2601 toshiba K2601 K2601 toshiba transistor k2601 2SK2601 SC-65 toshiba 2-16c1b PDF

    toshiba K2601

    Abstract: K2601 jeita sc-65 2SK2601
    Contextual Info: 2SK2601 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSⅤ 2SK2601 ○ スイッチングレギュレータ 単位: mm z オン抵抗が低い。 : RDS (ON) = 0.56 Ω (標準) z 順方向伝達アドミタンスが高い。 : |Yfs| = 7.0 S (標準)


    Original
    2SK2601 SC-65 2-16C1B K2601 2002/95/EC) toshiba K2601 K2601 jeita sc-65 2SK2601 PDF

    K2603

    Contextual Info: 2SK2603 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII 2SK2603 Chopper Regulator, DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 3.0 Ω (typ.) z High forward transfer admittance : |Yfs| = 2.6 S (typ.)


    Original
    2SK2603 K2603 PDF

    K2605

    Abstract: K2605 transistor 2SK2605 K2605 TOSHIBA
    Contextual Info: 2SK2605 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII 2SK2605 Switching Regulator Applications Unit: mm z Low drain−source ON resistance : RDS (ON) = 1.9 Ω (typ.) z High forward transfer admittance : |Yfs| = 3.8 S (typ.) z Low leakage current


    Original
    2SK2605 K2605 K2605 transistor 2SK2605 K2605 TOSHIBA PDF

    toshiba K2601

    Abstract: toshiba transistor k2601 K2601 2SK2601 SC-65
    Contextual Info: 2SK2601 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2601 DC−DC Converter, Relay Drive and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 0.75 Ω (typ.) z High forward transfer admittance : |Yfs| = 7.0 S (typ.)


    Original
    2SK2601 toshiba K2601 toshiba transistor k2601 K2601 2SK2601 SC-65 PDF

    2-10P1B

    Abstract: 2SK2608
    Contextual Info: 2SK2608 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII 2SK2608 Switching Regulator Applications Unit: mm l Low drain−source ON resistance : RDS (ON) = 3.73 Ω (typ.) l High forward transfer admittance : |Yfs|= 2.6 S (typ.) l Low leakage current


    Original
    2SK2608 2-10P1B 2SK2608 PDF

    k2605

    Abstract: K2605 transistor K2605 TOSHIBA 2SK2605 transistor k2605
    Contextual Info: 2SK2605 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII 2SK2605 Switching Regulator Applications z Unit: mm Low drain−source ON resistance : RDS (ON) = 1.9 Ω (typ.) : |Yfs| = 3.8 S (typ.) z High forward transfer admittance z Low leakage current


    Original
    2SK2605 k2605 K2605 transistor K2605 TOSHIBA 2SK2605 transistor k2605 PDF

    2SK2602

    Abstract: SC-65
    Contextual Info: TOSHIBA 2SK2602 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M O SV 2SK2602 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS SWITCHING REGULATOR APPLICATIONS • • • • Low Drain-Sorce ON Resistance : Rd S(ON)“ 0.9O (Typ.)


    OCR Scan
    2SK2602 SC-65 PDF

    2SK2602

    Abstract: SC-65
    Contextual Info: 2SK2602 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2602 Switching Regulator Applications Unit: mm l Low drain−source ON resistance : RDS (ON) = 0.9 Ω (typ.) l High forward transfer admittance : |Yfs| = 5.5 S (typ.) l Low leakage current


    Original
    2SK2602 2SK2602 SC-65 PDF

    transistor 2sk2605

    Abstract: 2sk2605 j3d marking
    Contextual Info: T O SH IB A 2SK2605 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSIII 2SK2605 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS SWITCHING REGULATOR APPLICATIONS • Low Drain-Sorce ON Resistance : Rßg (ON)= 1-9^ (Typ.) tt: j.x ig_ln tti_


    OCR Scan
    2SK2605 s100//s J--25 --90V, --27mH transistor 2sk2605 2sk2605 j3d marking PDF

    K2602

    Abstract: transistor k2602 2SK2602 SC-65
    Contextual Info: 2SK2602 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2602 Switching Regulator Applications Unit: mm Low drain−source ON resistance : RDS (ON) = 0.9 Ω (typ.) High forward transfer admittance : |Yfs| = 5.5 S (typ.) Low leakage current


    Original
    2SK2602 K2602 transistor k2602 2SK2602 SC-65 PDF

    K2602

    Abstract: jeita sc-65 2SK2602 K2602 toshiba 2SK2602(F,T)
    Contextual Info: 2SK2602 東芝電界効果トランジスタ シリコンNチャネルMOS形 π-MOSⅤ 2SK2602 ○ スイッチングレギュレータ用 単位: mm z オン抵抗が低い。 : RDS (ON) = 0.9Ω (標準) z 順方向伝達アドミタンスが高い。 : |Yfs| = 5.5S (標準)


    Original
    2SK2602 10VID SC-65 2-16C1B K2602 2002/95/EC) K2602 jeita sc-65 2SK2602 K2602 toshiba 2SK2602(F,T) PDF