2SK266 Search Results

2SK266 Datasheets (34)

Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
2SK266	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF	101.94KB	1
2SK266	Unknown	FET Data Book	Scan	PDF	93.66KB	2
2SK266	Toshiba	Transistors / FETs	Scan	PDF	61.85KB	1
2SK2660	Panasonic	Silicon N-Channel Power F-MOS FET	Original	PDF	34.5KB	2
2SK2660	Panasonic	Silicon N-Channel Power F-MOS FET	Scan	PDF	31.41KB	1
2SK2661	Toshiba	SILICON N CHANNEL MOS TYPE, FIELD EFFECT TRANSISTO	Original	PDF	391.58KB	6
2SK2661	Toshiba		Original	PDF	44.05KB	9
2SK2661	Toshiba	Power MOSFETs Cross Reference Guide	Original	PDF	165.78KB	67
2SK2661	Toshiba	Power MOSFET Selection Guide with Cross Reference Data	Original	PDF	1.45MB	45
2SK2661	Toshiba	Field Effect Transistor Silicon N Channel MOS Type	Scan	PDF	305.87KB	5
2SK2661	Toshiba	Silicon N-channel MOS type field effect transistor for high speed, high current switching applications, chopper regulator,DC-DC converter and motor drive applications	Scan	PDF	286.16KB	5
2SK2662	Toshiba	N-Channel MOSFET	Original	PDF	421.17KB	6
2SK2662	Toshiba	Power MOSFETs Cross Reference Guide	Original	PDF	165.78KB	67
2SK2662	Toshiba		Original	PDF	44.05KB	9

2SK2662	Toshiba	Power MOSFET Selection Guide with Cross Reference Data	Original	PDF	1.45MB	45
2SK2662	Toshiba	Field Effect Transistor Silicon N Channel MOS Type	Scan	PDF	310.08KB	5
2SK2662	Toshiba	Silicon N channel field effect transistor for high speed, high voltage switching applications, DC-DC converter, relay drive and motor drive applications	Scan	PDF	285.28KB	5
2SK2662(Q)	Toshiba	2SK2662 - Trans MOSFET N-CH 500V 5A 3-Pin(3+Tab) TO-220NIS	Original	PDF	555.09KB	6
2SK2662T	Toshiba	2SK2662T - Trans MOSFET N-CH 500V 5A 3-Pin(3+Tab) TO-220NIS T/R	Original	PDF	555.09KB	6
2SK2663	Shindengen Electric	N-Channel Enhancement type Power MOSFET	Original	PDF	337.08KB	12

2SK266 Price and Stock

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Toshiba America Electronic Components 2SK2662(Q) - Rail/Tube (Alt: 2SK2662(Q))
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	2SK2662(Q)	Tube		111 Weeks	50	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Quest Components ()	2SK2662(Q)		7,265			1 $1.66 10 $1.66 100 $1.66 1000 $1.66 10000 $0.50	Buy Now
	2SK2662(Q)		21			1 - 10 - 100 - 1000 - 10000 -	Buy Now
Toshiba America Electronic Components 2SK2662(Q,T)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	2SK2662(Q,T)		1,121			1 $1.66 10 $1.66 100 $0.83 1000 $0.66 10000 $0.66	Buy Now
shind 2SK2663 900V 1A N-CHANNEL ENHANCEMENT TYPE POWER MOSFET Power Field-Effect Transistor, 1A I(D), 900V, 14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
ComSIT USA	2SK2663		4,826			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Shindengen Electronic Manufacturing Co Ltd 2SK2666 900V 3A N-CHANNEL ENHANCEMENT TYPE POWER MOSFET Power Field-Effect Transistor, 3A I(D), 900V, 4.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
ComSIT USA	2SK2666		1,581			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Toshiba America Electronic Components 2SK2661 SILICON N CHANNEL MOS TYPE (PI-MOSV) FIELD EFFECT TRANSISTOR Power Field-Effect Transistor, 5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
ComSIT USA	2SK2661		150			1 - 10 - 100 - 1000 - 10000 -	Get Quote

2SK266 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
2SK2668 Abstract: FP3W90HVX2 Contextual Info: SHINDENGEN HVX-2 Series Power MOSFET 2SK2668 N-Channel Enhancement type OUTLINE DIMENSIONS FP3W90HVX2 Case : ITO-3P (Unit : mm) 900V 3A FEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small.	Original	2SK2668 FP3W90HVX2 2SK2668 FP3W90HVX2	PDF
L67c Abstract: 2-10P1B 2SK2661 Contextual Info: T O S H IB A 2SK2661 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSV 2SK2661 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS • Low Drain-Source ON Resistance	OCR Scan	2SK2661 L67c 2-10P1B 2SK2661	PDF
Contextual Info: SHINDENGEN HVX-2 Series Power MOSFET 2SK2663 N-Channel Enhancement type OUTLINE DIMENSIONS F1E90HVX2 Case : E-pack (Unit : mm) 900V 1A FEATURES ●Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. ●The static Rds(on) is small.	Original	2SK2663 F1E90HVX2	PDF
Contextual Info: TOSHIBA 2SK2661 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M O SV] 2SK2661 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE U nit in mm APPLICATIONS 10.3MAX. •	OCR Scan	2SK2661 100/iA	PDF
Contextual Info: H V X -E ^ ii-v e / t v - MOSFET HVX-n SERIES POWER MOSFET ^ W K T fa ia O U T L IN E D IM E N S IO N S 2SK2663 F1E90HVX2 900v1a 'l-V 9 '{ 7 ^ h '0 $ -fo Lead type is available. • R A TIN G S ■ Absolute Maximum R atings m Item ( T c = 2 5 ”C) 12 #	OCR Scan	2SK2663 F1E90HVX2) 900v1a QQQ22T1	PDF
Contextual Info: TOSHIBA FIELD EFFECT TRANSISTOR SEM ICONDUCTOR TO SH IBA TECHNICAL 2SK2662 DATA SILICON N CHANNEL MOS TYPE tt- M O S V (2SK2662) HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS	OCR Scan	2SK2662 2SK2662) 20kii) 2SK2662	PDF
diode RT7 Abstract: 2sk2661 Contextual Info: TOSHIBA FIELD EFFECT TRANSISTOR SEM ICONDUCTOR TO SH IBA TECHNICAL 2SK2661 SILICON N CHANNEL MOS TYPE tt- M O S V DATA (2SK2661) HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE	OCR Scan	2SK2661 2SK2661) 2SK2661 diode RT7	PDF
2SK2660 Contextual Info: Power F-MOS FETs 2SK2660 Silicon N-Channel Power F-MOS FET • Features unit: mm M Di ain sc te on na tin nc ue e/ d ● High-speed switching ● High drain-source voltage 6.5±0.1 5.3±0.1 4.35±0.1 Symbol Ratings Unit Drain to Source breakdown voltage VDSS	Original	2SK2660 2SK2660	PDF
2SK266 Abstract: 2SK2664 F3V90HVX2 Contextual Info: SHINDENGEN HVX-2 Series Power MOSFET 2SK2664 N-Channel Enhancement type OUTLINE DIMENSIONS F3V90HVX2 Case : TO-220 (Unit : mm) 900V 3A FEATURES ● Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. ● The static Rds(on) is small.	Original	2SK2664 F3V90HVX2 O-220 2SK266 2SK2664 F3V90HVX2	PDF
2SK2669 Abstract: MOSFET 900V TO-220 F5V90HVX2 Contextual Info: SHINDENGEN HVX-2 Series Power MOSFET 2SK2669 N-Channel Enhancement type OUTLINE DIMENSIONS F5V90HVX2 Case : TO-220 (Unit : mm) 900V 5A FEATURES ● Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. ● The static Rds(on) is small.	Original	2SK2669 F5V90HVX2 O-220 100mJ 2SK2669 MOSFET 900V TO-220 F5V90HVX2	PDF
2SK2665 Abstract: F3S90HVX2 Contextual Info: SHINDENGEN HVX-2 Series Power MOSFET 2SK2665 F3S90HVX2 N-Channel Enhancement type OUTLINE DIMENSIONS Case : STO-220 (Unit : mm) 900V 3A FEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small.	Original	2SK2665 F3S90HVX2 STO-220 2SK2665 F3S90HVX2	PDF
K2662 Abstract: TRANSISTOR MAKING 2SK2662 Contextual Info: 2SK2662 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2662 DC−DC Converter, Relay Drive and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 1.35 Ω (typ.) z High forward transfer admittance : \|Yfs\| = 4.0 S (typ.)	Original	2SK2662 K2662 TRANSISTOR MAKING 2SK2662	PDF
2SK2668 Abstract: FP3W90HVX2 Contextual Info: SHINDENGEN HVX-2 Series Power MOSFET 2SK2668 N-Channel Enhancement type OUTLINE DIMENSIONS FP3W90HVX2 Case : ITO-3P (Unit : mm) 900V 3A FEATURES ●Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. ●The static Rds(on) is small.	Original	2SK2668 FP3W90HVX2 2SK2668 FP3W90HVX2	PDF
2SK2665 Abstract: F3S90HVX2 Contextual Info: SHINDENGEN HVX-2 Series Power MOSFET 2SK2665 F3S90HVX2 N-Channel Enhancement type OUTLINE DIMENSIONS Case : STO-220 (Unit : mm) 900V 3A FEATURES ● Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. ● The static Rds(on) is small.	Original	2SK2665 F3S90HVX2 STO-220 2SK2665 F3S90HVX2	PDF

Contextual Info: Power MOSFET E-pack SMD HVX- II series TO-220 STO-220 (SMD) ITO-3P FTO-220 N-Channel, Enhancement type Absolute Maximum Ratings Type No. 2SK2663 2664 2665 2666 2667 2668 2669 2670 2671 2672 2673 2674 2675 2676 2677 2333 Electrical Characteristics R d s (on )	OCR Scan	O-220 STO-220 FTO-220 T0220 STO-220 FTO-220 O-220	PDF
K2661 Abstract: 2SK2661 2-10P1B Contextual Info: 2SK2661 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π–MOSV 2SK2661 Chopper Regulator, DC–DC Converter and Motor Drive Applications z Low drain–source ON resistance : RDS (ON) = 1.35 Ω (typ.) z High forward transfer admittance : \|Yfs\| = 4.0 S (typ.)	Original	2SK2661 K2661 2SK2661 2-10P1B	PDF
K2662 Abstract: 2SK2662 Contextual Info: T O SH IB A 2SK2662 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M OSV 2SK2662 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm 10 +0.3 • •	OCR Scan	2SK2662 20kii) C2662 K2662 2SK2662	PDF
Contextual Info: H V X -ïïv U -X A 9 -M 0 SFET HVX-n SERIES POWER MOSFET N-fr-V m KM O U T L IN E D IM E N S IO N S Case : ITO-3P 2SK2668 n.2-°-2 FP3W90HVX2 900v 3a + % Date code oa 5.5±0-3 ÎS.O *« @ ¡" 5 9 ^ K2668 EIAJ No. " W 3.3±0-3 2.1MAX-H 2.1 MAX ± 0.2 l,Q±0-2	OCR Scan	2SK2668 FP3W90HVX2) K2668 90HVX2)	PDF
2SK2662 Contextual Info: TOSHIBA 2SK2662 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M OSV 2SK2662 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm 10 ± 0.3 2.7± 0.2	OCR Scan	2SK2662 2SK2662	PDF
2SK2662 Contextual Info: TOSHIBA 2SK2662 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M O SV 2SK2662 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS • • • • Low Drain-Source ON Resistance : Rd S(O N )- 1.350 (Typ.)	OCR Scan	2SK2662 2SK2662	PDF
Contextual Info: 2SK758 Power F-MOS FETs 2SK2660 Tentative Silicon N-Channel Power F-MOS Unit : mm • Features ● High-speed switching 6.5±0.1 ● High drain-source voltage (VDSS) 4.35±0.1 1.8±0.1 2.5±0.1 5.3±0.1 3.0±0.1 0.85±0.1 Parameter Symbol Rating Unit Drain-Source breakdown voltage	Original	2SK758 2SK2660 SC-63	PDF
Contextual Info: SHINDENGEN HVX-2 Series Power MOSFET 2SK2665 F3S90HVX2 N-Channel Enhancement type OUTLINE DIMENSIONS Case : STO-220 (Unit : mm) 900V 3A FEATURES ●Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. ●The static Rds(on) is small.	Original	2SK2665 F3S90HVX2 STO-220	PDF
Contextual Info: H V X - E v U - X M 9 -M 0 S F E T H V X -1 SERIES POWER MOSFET O U T L IN E D IM E N S IO N S 2SK2665 F3S 90H V X 2 900v 3a L e a d type is a vailab le. I Ë ftX R A TIN G S A b s o lu te Maxim um R a tin g s h m ie Item ~f~ A' -î' C h a n n e l T e m p e r a tu r e	OCR Scan	2SK2665	PDF
F3F90HVX2 Abstract: 2SK2666 2sk2666 t Contextual Info: H V X -I Iv 'J -X M OSFET HVX-n SERIES POWER MOSFET • Wfê-SÜÉBI O U T L IN E D IM E N S IO N S 2SK2666 F3F90H VX 2 ■ R A TIN G S ■ A b s o lu te M axim um R a tin g s if Ite m g od Tn Sym bol S t o r a g e T e m p e ra tu r e -f- -y JU C h a n n e l T e m p e r a tu r e	OCR Scan	2SK2666 F3F90H 10//S. F3F90HVX2) F3F90HVX2 2SK2666 2sk2666 t	PDF

2SK266 Search Results

2SK266 Datasheets (34)

2SK266 Price and Stock

Toshiba America Electronic Components 2SK2662(Q)

Toshiba America Electronic Components 2SK2662(Q,T)

shind 2SK2663

Shindengen Electronic Manufacturing Co Ltd 2SK2666

Toshiba America Electronic Components 2SK2661

2SK266 Datasheets Context Search

2SK2668

L67c

diode RT7

2SK2660

2SK266

2SK2669

2SK2665

K2662

2SK2668

2SK2665

K2661

K2662

2SK2662

2SK2662

F3F90HVX2