2SK277 Search Results

2SK2772

Abstract: 43501
Contextual Info: Panasonic P o w er F -M O S FETs 2SK2772 Tentative S ilic o n N - C h a n n e l M O S U n it : m m For high-speed switching 5.3+0.1 • Features • High-speed switching • High drain-source voltage (V d s s ) Absolute Maximum Ratings (Ta = 25°C) P aram eter

K2776

Abstract: 2SK2776
Contextual Info: 2SK2776 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSⅤ 2SK2776 ○ スイッチングレギュレータ用 単位: mm : RDS (ON) = 0.75Ω(標準) z オン抵抗が低い。 z 順方向伝達アドミタンスが高い。 : |Yfs|= 7.0S (標準)

Contextual Info: TOSHIBA 2SK2777 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSV 2SK2777 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm TO-220FL CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE 10.3MAX. APPLICATIONS

2SK2779

Abstract: FM20 v40150
Contextual Info: 2SK2779 External dimensions 1 . FM20 Absolute Maximum Ratings Ta = 25ºC Electrical Characteristics Symbol Ratings Unit Symbol VDSS 100 V V(BR) DSS min 100 ±20 V ID ±20 A VTH 1.0 ±80 A Re (yfs) 12 35 (Tc = 25ºC) W RDS (on) PD EAS *2 Unit max I GSS

Contextual Info: 2SK2770-01 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-2S Series Outline Drawings TO-3P Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply

K2776

Abstract: 2SK2776
Contextual Info: 2SK2776 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2776 Chopper Regulator, DC−DC Converter and Motor Drive Applications z z z z Unit: mm Low drain−source ON resistance : RDS (ON) = 0.75 Ω (typ.) High forward transfer admittance

2SK2779

Abstract: FM20 v40150
Contextual Info: 2SK2779 Absolute Maximum Ratings Ta = 25ºC Electrical Characteristics Symbol Ratings Unit Symbol VDSS 100 V V(BR) DSS V ID ±20 A VTH 1.0 ±80 A Re (yfs) 12 35 (Tc = 25ºC) EAS *2 V I D = 100µA, VGS = 0V nA VGS = ±20V 100 µA VDS = 100V, VGS = 0V 2.0

2SK2779

Abstract: FM20
Contextual Info: 2SK2779 Absolute Maximum Ratings Ta = 25ºC Electrical Characteristics Symbol Ratings Unit Symbol VDSS 100 V V(BR) DSS V ID ±20 A VTH 1.0 ±80 A Re (yfs) 12 35 (Tc = 25ºC) EAS *2 V I D = 100µA, VGS = 0V nA VGS = ±20V 100 µA VDS = 100V, VGS = 0V 2.0

2SK2776

Contextual Info: TOSHIBA 2SK2776 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M O SV 2SK2776 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS Unit in m m T0-220FL CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS 10.3MAX.

Contextual Info: TOSHIBA 2SK2776 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL M O S TYPE /f-M OSV 2SK2776 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS TO-220FL U n it in mm CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS •

2SK2770-01

Contextual Info: 2SK2770-01 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-2S Series Outline Drawings TO-3P Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply

VIP 100A

Abstract: 2SK2770-01 doom
Contextual Info: P U 2SK2770-01 J 1 E ïïïS D E N-channel MOS-FET 900V 5,5Q 3,5A 100W FAP-IIS Series > Features - Outline Drawing TO-3P High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage V gs = ± 30V Guarantee Repetitive Avalanche Rated

2SK2779

Abstract: FM20 v40150
Contextual Info: 2SK2779 External dimensions 1 . FM20 Absolute Maximum Ratings Electrical Characteristics Symbol Ratings Unit Symbol VDSS 100 V V BR DSS V I D = 100µA, VGS = 0V nA VGS = ±20V I DSS 100 µA VDS = 100V, VGS = 0V ID ±20 A VTH 1.0 ±80 A Re (yfs) 12 35 (Tc = 25ºC)

Contextual Info: 2SK2770-01 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-2S Series Outline Drawings TO-3P Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply

63923

Abstract: 2SK2775 63921 63924 m1403
Contextual Info: Ordering number:ENN6392 N-Channel Silicon MOSFET 2SK2775 Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2128 [2SK2775] 8.2 7.8 6.2 3 8.4 10.0 0.6 1.0 2.54 1 2 0.7 1.2 4.2 • Low ON resistance. · Ultrahigh-speed switching. · 4V drive. · Enables simplified fabrication, high-density mounting, and miniaturization in end products due to the

K2776

Contextual Info: 2SK2776 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2776 Chopper Regulator, DC−DC Converter and Motor Drive Applications z z z z Unit: mm Low drain−source ON resistance : RDS (ON) = 0.75 Ω (typ.) High forward transfer admittance

K2776

Abstract: 2SK2776
Contextual Info: 2SK2776 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2776 Chopper Regulator, DC−DC Converter and Motor Drive Applications z z z z Unit: mm Low drain−source ON-resistance : RDS (ON) = 0.75 Ω (typ.) High forward transfer admittance

2SK2776

Contextual Info: 2SK2776 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2776 Chopper Regulator, DC−DC Converter and Motor Drive Applications Low drain−source ON resistance : RDS (ON) = 0.75 Ω (typ.) High forward transfer admittance : |Yfs| = 7.0 S (typ.)

Contextual Info: FU JI STyMElrttìUK 2SK2770-01 N-channel MOS-FET FAP-IIS Series > Features - 5 ,5 0 . 900V 4.5 15 . 5 m m ' 0 3 .2 u -> r t I D > Applications S |jJL6 ,1.1 Switching Regulators UPS DC-DC converters General Purpose Power Amplifier 5 .4 5 5.45 1 15 > Maximum Ratings and Characteristics

K2776

Abstract: 2SK2776
Contextual Info: 2SK2776 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2776 Chopper Regulator, DC−DC Converter and Motor Drive Applications z z z z Unit: mm Low drain−source ON resistance : RDS (ON) = 0.75 Ω (typ.) High forward transfer admittance

K2777

Abstract: 2SK2777
Contextual Info: 2SK2777 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-−MOSV 2SK2777 Chopper Regulator, DC−DC Converter and Motor Drive Applications z z z z Unit: mm Low drain−source ON resistance : RDS (ON) = 0.9 Ω (typ.) High forward transfer admittance

IN4100

Abstract: 2SK2778 FM20 a1sh
Contextual Info: 2SK2778 External dimensions 1 . FM20 Absolute Maximum Ratings Electrical Characteristics Symbol Ratings Unit Symbol VDSS 100 V V BR DSS min 100 V VGS = ±20V 100 µA VDS = 100V, VGS = 0V ±12 A VTH ±48 A Re (yfs) 30 (Tc = 25ºC) W RDS (on) 1.0 2.0 7

L92C

Abstract: 2SK2777
Contextual Info: TOSHIBA 2SK2777 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSV 2SK2777 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS • • • • INDUSTRIAL APPLICATIONS Unit in m m

Contextual Info: TO SHIBA 2SK2776 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M O SV] 2SK2776 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm TO-220FL CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS 10.3MAX.