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    2SK279 Search Results

    2SK279 Result Highlights (3)

    Part ECAD Model Manufacturer Description Download Buy
    2SK2796STL-E Renesas Electronics Corporation Nch Single Power Mosfet 60V 5A 160Mohm DPAK(S)/To-252 Visit Renesas Electronics Corporation
    2SK2796L-E Renesas Electronics Corporation Nch Single Power Mosfet 60V 5A 160Mohm DPAK(L)-(1)/To-251 Visit Renesas Electronics Corporation
    2SK2796STR-E Renesas Electronics Corporation Nch Single Power Mosfet 60V 5A 160Mohm DPAK(S)/To-252 Visit Renesas Electronics Corporation
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    2SK279 Price and Stock

    Renesas Electronics Corporation 2SK2796STL-E

    Trans MOSFET N-CH Si 60V 5A 3-Pin(2+Tab) DPAK(S) T/R
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    Verical 2SK2796STL-E 2,501 33
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    • 100 $0.7137
    • 1000 $0.5912
    • 10000 $0.5525
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    Chip1Stop 2SK2796STL-E Cut Tape 2,581
    • 1 $1.63
    • 10 $0.797
    • 100 $0.591
    • 1000 $0.489
    • 10000 $0.457
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    Renesas Electronics Corporation 2SK2796STLEZZZZ

    HIGH SPEED POWER SWITCHING SILICON N CHANNEL MOS FET Power Field-Effect Transistor, 5A I(D), 60V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA 2SK2796STLEZZZZ 3,000
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    2SK279 Datasheets (33)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SK279 Unknown High Frequency Device Data Book (Japanese) Scan PDF
    2SK279 Unknown FET Data Book Scan PDF
    2SK2790 Panasonic Silicon N-Channel Power F-MOS FET Scan PDF
    2SK2791 Sanyo Semiconductor Original PDF
    2SK2791 Sanyo Semiconductor TP Type / MP Type Transistors Scan PDF
    2SK2792 ROHM Switching (600V, 4A) Original PDF
    2SK2792 ROHM TRANS MOSFET N-CH 600V 4A 3TO-220FN Original PDF
    2SK2793 ROHM Switching (500V, 5A) Original PDF
    2SK2793 ROHM TRANS MOSFET N-CH 500V 5A 3TO-220FN Original PDF
    2SK2794 Hitachi Semiconductor Silicon N Channel MOS FET, UHF Power Amplifier Original PDF
    2SK2795 Hitachi Semiconductor Silicon NPN Triple Diffused Original PDF
    2SK2795 Renesas Technology Silicon N-Channel MOS FET UHF Power Amplifier Original PDF
    2SK2796 Hitachi Semiconductor Power Mosfet 5th Generation Original PDF
    2SK2796 Hitachi Semiconductor Silicon N Channel MOS FET High Speed Power Switching Original PDF
    2SK2796 Renesas Technology Silicon N Channel MOS FET High Speed Power Switching Original PDF
    2SK2796(L) Hitachi Semiconductor Power switching MOSFET Original PDF
    2SK2796L Hitachi Semiconductor Silicon N Channel MOS FET High Speed Power Switching Original PDF
    2SK2796(L) Renesas Technology Silicon N Channel MOS FET High Speed Power Switching Original PDF
    2SK2796L Renesas Technology Silicon N Channel MOS FET High Speed Power Switching Original PDF
    2SK2796L Renesas Technology High Speed Power Amplifier, 60V 5A 20W, MOS-FET N-Channel enhanced Original PDF

    2SK279 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SK2796L

    Abstract: 2SK2796S Hitachi DSA00117
    Text: 2SK2796L, 2SK2796S Silicon N Channel MOS FET High Speed Power Switching Target Specification 1st. Edition October 1996 Features • • • Low on-resistance RDS on = 0.12Ω typ. 4V gate drive devices. High speed switching Outline DPAK 4 4 D 2 1 2 G 1 3


    Original     		PDF 2SK2796L, 2SK2796S 2SK2796L 2SK2796S Hitachi DSA00117

    Untitled

    Abstract: No abstract text available
    Text: SHINDENGEN VX-2 Series Power MOSFET 2SK2799 F10F35VX2 N-Channel Enhancement type OUTLINE DIMENSIONS Case : FTO-220 Case E-pack (Unit : mm) 350V 10A FEATURES ●Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. ●The static Rds(on) is small.


    Original     		PDF 2SK2799 F10F35VX2) FTO-220

    2SK2794

    Abstract: Hitachi DSA002780
    Text: 2SK2794 Silicon N-Channel MOS FET UHF Power Amplifier ADE-208-465 1st. Edition Features • High power output, High gain, High efficiency PG = 8.0dB, Pout = 31dBm, ηD = 60 %min. f = 836.5MHz • Compact package capable of surface mounting Outline This Device is sensitive to Elecro Static Discharge.


    Original     		PDF 2SK2794 ADE-208-465 31dBm, 2SK2794 Hitachi DSA002780

    Untitled

    Abstract: No abstract text available
    Text: Power F-MOS FETs 2SK2797 Silicon N-Channel Power F-MOS FET • Features unit: mm ● Avalanche energy capacity guaranteed: EAS > 10mJ ● High-speed switching: tf = 15ns ● No secondary breakdown 6.5±0.1 5.3±0.1 4.35±0.1 ■ Absolute Maximum Ratings TC = 25°C


    Original     		PDF 2SK2797

    2SK2792

    Abstract: No abstract text available
    Text: Transistors Switching 600V, 4A 2SK2792 FFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Gate-source voltage (VGSS) guaranteed to be ±30V. 5) Easily designed drive circuits. 6) Easy to parallel. FStructure Silicon N-channel


    Original     		PDF 2SK2792 2SK2792

    F10F35VX2

    Abstract: 2SK2799
    Text: SHINDENGEN VX-2 Series Power MOSFET 2SK2799 F10F35VX2 N-Channel Enhancement type OUTLINE DIMENSIONS Case : FTO-220 Case E-pack (Unit : mm) 350V 10A FEATURES ● Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. ● The static Rds(on) is small.


    Original     		PDF 2SK2799 F10F35VX2) FTO-220 Singl001 F10F35VX2 2SK2799

    mosfet 600v

    Abstract: mosfet 600v 600V MOSFET 600V,4A mosfet 600V N-CHANNEL parallel mosfet parallel MOSFET Transistors 2SK2792
    Text: Transistors Switching 600V, 4A 2SK2792 FFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Gate-source voltage (VGSS) guaranteed to be ±30V. 5) Easily designed drive circuits. 6) Easy to parallel. FStructure Silicon N-channel


    Original     		PDF 2SK2792 mosfet 600v mosfet 600v 600V MOSFET 600V,4A mosfet 600V N-CHANNEL parallel mosfet parallel MOSFET Transistors 2SK2792

    Hitachi 45 DX

    Abstract: Hitachi DSA002780
    Text: 2SK2795 Silicon N-Channel MOS FET UHF Power Amplifier ADE-208-466 A 2nd. Edition Features • High power output, High gain, High effeciency PG = 11dB, Pout = 24dBm, ηD = 40 %min. f = 836.5MHz • Compact package capable of surface mounting Outline This Device is sensitive to Electro Static Discharge.


    Original     		PDF 2SK2795 ADE-208-466 24dBm, Hitachi 45 DX Hitachi DSA002780

    2SK2796

    Abstract: Hitachi DSA00117
    Text: 2SK2796 L , 2SK2796(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-534C (Z) 4th. Edition Jul. 1998 Features • Low on-resistance R DS(on) = 0.12Ω typ. • 4V gate drive devices. • High speed switching Outline DPAK |1 4 4 D 1 2 3 G S 1 2


    Original     		PDF 2SK2796 ADE-208-534C Hitachi DSA00117

    Untitled

    Abstract: No abstract text available
    Text: 2SK2797 Power F-MOS FETs 2SK2797 Tentative Silicon N-Channel MOS Unit : mm For high-speed switching For high-frequency power amplification 6.5±0.1 5.3±0.1 ● High-speed switching : tf=15ns ● No secondary breakdown Unit VDSS 200 V Gate-Source voltage


    Original     		PDF 2SK2797 2SK2797 SC-63

    Untitled

    Abstract: No abstract text available
    Text: 2SK758 Power F-MOS FETs 2SK2790 Tentative Silicon N-Channel Power F-MOS Unit : mm • Features ● ● High-speed switching 6.0±0.5 ● No secondary breakdown ■ Applications ● Motor drive 1.0±0.1 1.5max. 1.1max. 2.0 High-speed switching 10.5min. ●


    Original     		PDF 2SK758 2SK2790

    2SK2797

    Abstract: No abstract text available
    Text: Power F-MOS FETs 2SK2797 Silicon N-Channel Power F-MOS FET • Features unit: mm M Di ain sc te on na tin nc ue e/ d ● Avalanche energy capacity guaranteed: EAS > 10mJ ● High-speed switching: tf = 15ns ● No secondary breakdown Symbol Ratings Unit Drain to Source breakdown voltage


    Original     		PDF 2SK2797 2SK2797

    2SK2791

    Abstract: No abstract text available
    Text: Ordering number:ENN6437 N-Channel Silicon MOSFET 2SK2791 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · 4V drive. unit:mm 2083B [2SK2791] 2.3 1.5 6.5 5.0 0.5 7.0 5.5 4 1.2 7.5 0.8 1.6


    Original     		PDF ENN6437 2SK2791 2083B 2SK2791] 2092B 2SK2791

    2sk2799

    Abstract: F10F35VX2 mosfet 350v 10A
    Text: SHINDENGEN VX-2 Series Power MOSFET 2SK2799 F10F35VX2 N-Channel Enhancement type OUTLINE DIMENSIONS Case : FTO-220 (Unit : mm) 350V 10A FEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small.


    Original     		PDF 2SK2799 F10F35VX2) FTO-220 Aval001 2sk2799 F10F35VX2 mosfet 350v 10A

    Untitled

    Abstract: No abstract text available
    Text: Transistors Switching 600V, 4A 2SK2792 •F e a tu re s 1) • E x te r n a l d im e n s io n s (U nits: m m ) L o w o n -re sista n ce . 2) H ig h -s p e e d s w itc h in g . 3) W id e S O A (safe o p e ra tin g area). 4) G a te -s o u rc e v o lta g e g u a ra n te e d


    OCR Scan     		PDF 2SK2792 O-220FN 0Dlb713 O-220FN O220FP T0-220FP, O-220FP.

    Untitled

    Abstract: No abstract text available
    Text: Panasonic P o w e r F -M O S F E T s 2SK2797 Tentative Silicon N-Channel MOS Unit : mm For high-speed switching For high-frequency power amplification • Features • Avalanche energy capability guaranteed : EAS > lOmJ • High-speed switching : tf=15ns


    OCR Scan     		PDF 2SK2797 SC-63

    Untitled

    Abstract: No abstract text available
    Text: 2SK2796 L , 2SK2796(S) Silicon N Channel MOS FET High Speed Power Switching HITACHI Features • Low on-resistance R ds(oii) = 0.12Í2 typ. • 4V gate drive devices. • High speed switching Outline DPAK |1 Í I 1. 2. 3. 4. G ate Drain S ource Drain ADE-208-534C (Z)


    OCR Scan     		PDF 2SK2796 ADE-208-534C 2SK2796Ã

    333Q

    Abstract: 2SK2790
    Text: Panasonic P o w e r F -M O S F E T s 2SK2790 Tentative Silicon N-Channel Power F-MOS • Features • Low ON-resistance Rds(oii) • High-speed switching • No secondary breakdown ■Applications • High-speed switching • Motor drive Absolute Maximum Ratings


    OCR Scan     		PDF 2SK2790 VGS-10V, 333Q

    2SK2793

    Abstract: No abstract text available
    Text: Transistors Switching 500V, 5A 2SK2793 •F e a tu re s ^External dim ensions (Unit: mm) 1) Low on-resistance. 2) High-speed switching. 3) W ide SOA (safe operating area). 4) G ate-sonrce voltage gnaranteed at V gss = ± 3 0 V . 5) Easily designed drive circuits.


    OCR Scan     		PDF 2SK2793 O-220FN 2SK2793

    Untitled

    Abstract: No abstract text available
    Text: 2SK2796 L , 2SK2796 (S) Silicon N Channel MOS FET High Speed Power Switching HITACHI Features • Low on-resistance EWn) = 0.12Otyp. • 4V gate drive devices. • High speed switching Outline DPAK i # 1. 2. 3. 4. 1 122 G ate Drain Source Drain ADE-208-534 A


    OCR Scan     		PDF 2SK2796 12Otyp. ADE-208-534 oK2796

    Untitled

    Abstract: No abstract text available
    Text: Transistors Switching 500V, 5A 2SK2793 •F e a tu re s 1) Low on-resistance. 2) High-speed switching. ►External dim ensions (Unit: mm) ,+ 0 .3 3 - -+ 0 .3 0.1 R -0 .1 ¿ 3 .2 ± 0 .g •S tru c tu re Silicon N-channel M O SFET transistor ,2.54±0,5 (1 )(2){3)


    OCR Scan     		PDF 2SK2793 O-220FN 00A//iS

    2SK2540

    Abstract: 2SD2576 2sd2396 TA143E 2SK2459N 2SD 92 M C2N3904 2SB1569A 2SD2061 2SD1189F
    Text: Transistors/^ Leaded Type Quick Reference MOS FET V d ss V 60 100 200 250 300 450 500 600 800 Page b (A) 2 2SK2262 (MRT) 2SK2294 (TO -220FN ) 3 2SK2792 (T 0 -2 2 0 F N ) 4 2SK2459N (TO -220FN ) 5 2SK2460N (T 0-220FN ) 2SK2713 (T 0 -2 2 0 F N ) 2SK2793 (T 0 -2 2 0 F N )


    OCR Scan     		PDF 2SK2262 2SK2294 -220FN 2SK2792 2SK2459N 2SK2460N 0-220FN 2SK2713 2SK2793 2SK2540 2SD2576 2sd2396 TA143E 2SK2459N 2SD 92 M C2N3904 2SB1569A 2SD2061 2SD1189F

    10EFI

    Abstract: No abstract text available
    Text: Transistors Switching 500V, 5A 2SK2793 •F e a tu re s • E x t e r n a l d im e n s io n s {U nit: m m ) 1) L o w on -re sista n ce. 2) H ig h -s p e e d s w itc h in g . 3 ) W id e S O A (safe o p e ra tin g area). 4 ) G a te -s o n rce vo lta g e g n a ra n te e d


    OCR Scan     		PDF 2SK2793 10/is, 10EFI

    Untitled

    Abstract: No abstract text available
    Text: 2SK2794 Silicon N-Channel MOS FET UHF Power Amplifier HITACHI Features • H igh power output, H ig h gain, H ig h e fficie n cy PG = 8.0dB, Pout = 3 ld B m , riD = 60 % m in. f = 8 36.5M H z • Com pact package capable o f surface m ounting Outline RP8P


    OCR Scan     		PDF 2SK2794 ADE-208-465