2SK279 Search Results

2SK279 Result Highlights (3)

Part	Manufacturer	Description
2SK2796STL-E	Renesas Electronics Corporation	Nch Single Power Mosfet 60V 5A 160Mohm DPAK(S)/To-252
2SK2796L-E	Renesas Electronics Corporation	Nch Single Power Mosfet 60V 5A 160Mohm DPAK(L)-(1)/To-251
2SK2796STR-E	Renesas Electronics Corporation	Nch Single Power Mosfet 60V 5A 160Mohm DPAK(S)/To-252

2SK279 Price and Stock

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Renesas Electronics Corporation 2SK2796STL-E Trans MOSFET N-CH Si 60V 5A 3-Pin(2+Tab) DPAK(S) T/R
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Verical	2SK2796STL-E		2,497		33	1 - 10 - 100 $0.7088 1000 $0.5875 10000 $0.5488	Buy Now
Chip1Stop	2SK2796STL-E	Cut Tape	2,497			1 $1.56 10 $0.766 100 $0.567 1000 $0.47 10000 $0.439	Buy Now
Renesas Electronics Corporation 2SK2796STLEZZZZ HIGH SPEED POWER SWITCHING SILICON N CHANNEL MOS FET Power Field-Effect Transistor, 5A I(D), 60V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
ComSIT USA	2SK2796STLEZZZZ		3,000			1 - 10 - 100 - 1000 - 10000 -	Get Quote

2SK279 Datasheets (33)

Part	Manufacturer	Description	Datasheet Type	PDF
2SK279	Unknown	High Frequency Device Data Book (Japanese)	Scan	PDF
2SK279	Unknown	FET Data Book	Scan	PDF
2SK2790	Panasonic	Silicon N-Channel Power F-MOS FET	Scan	PDF
2SK2791	Sanyo Semiconductor		Original	PDF
2SK2791	Sanyo Semiconductor	TP Type / MP Type Transistors	Scan	PDF
2SK2792	ROHM	Switching (600V, 4A)	Original	PDF
2SK2792	ROHM	TRANS MOSFET N-CH 600V 4A 3TO-220FN	Original	PDF
2SK2793	ROHM	Switching (500V, 5A)	Original	PDF
2SK2793	ROHM	TRANS MOSFET N-CH 500V 5A 3TO-220FN	Original	PDF
2SK2794	Hitachi Semiconductor	Silicon N Channel MOS FET, UHF Power Amplifier	Original	PDF
2SK2795	Hitachi Semiconductor	Silicon NPN Triple Diffused	Original	PDF
2SK2795	Renesas Technology	Silicon N-Channel MOS FET UHF Power Amplifier	Original	PDF
2SK2796	Hitachi Semiconductor	Power Mosfet 5th Generation	Original	PDF
2SK2796	Hitachi Semiconductor	Silicon N Channel MOS FET High Speed Power Switching	Original	PDF

2SK2796	Renesas Technology	Silicon N Channel MOS FET High Speed Power Switching	Original	PDF
2SK2796(L)	Hitachi Semiconductor	Power switching MOSFET	Original	PDF
2SK2796L	Hitachi Semiconductor	Silicon N Channel MOS FET High Speed Power Switching	Original	PDF
2SK2796(L)	Renesas Technology	Silicon N Channel MOS FET High Speed Power Switching	Original	PDF
2SK2796L	Renesas Technology	Silicon N Channel MOS FET High Speed Power Switching	Original	PDF
2SK2796L	Renesas Technology	High Speed Power Amplifier, 60V 5A 20W, MOS-FET N-Channel enhanced	Original	PDF

2SK279 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
2SK2796L Abstract: 2SK2796S Hitachi DSA00117 Text: 2SK2796L, 2SK2796S Silicon N Channel MOS FET High Speed Power Switching Target Specification 1st. Edition October 1996 Features • • • Low on-resistance RDS on = 0.12Ω typ. 4V gate drive devices. High speed switching Outline DPAK 4 4 D 2 1 2 G 1 3	Original	PDF	2SK2796L, 2SK2796S 2SK2796L 2SK2796S Hitachi DSA00117
Untitled Abstract: No abstract text available Text: SHINDENGEN VX-2 Series Power MOSFET 2SK2799 F10F35VX2 N-Channel Enhancement type OUTLINE DIMENSIONS Case : FTO-220 Case E-pack (Unit : mm) 350V 10A FEATURES ●Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. ●The static Rds(on) is small.	Original	PDF	2SK2799 F10F35VX2) FTO-220
2SK2794 Abstract: Hitachi DSA002780 Text: 2SK2794 Silicon N-Channel MOS FET UHF Power Amplifier ADE-208-465 1st. Edition Features • High power output, High gain, High efficiency PG = 8.0dB, Pout = 31dBm, ηD = 60 %min. f = 836.5MHz • Compact package capable of surface mounting Outline This Device is sensitive to Elecro Static Discharge.	Original	PDF	2SK2794 ADE-208-465 31dBm, 2SK2794 Hitachi DSA002780
Untitled Abstract: No abstract text available Text: Power F-MOS FETs 2SK2797 Silicon N-Channel Power F-MOS FET • Features unit: mm ● Avalanche energy capacity guaranteed: EAS > 10mJ ● High-speed switching: tf = 15ns ● No secondary breakdown 6.5±0.1 5.3±0.1 4.35±0.1 ■ Absolute Maximum Ratings TC = 25°C	Original	PDF	2SK2797
2SK2792 Abstract: No abstract text available Text: Transistors Switching 600V, 4A 2SK2792 FFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Gate-source voltage (VGSS) guaranteed to be ±30V. 5) Easily designed drive circuits. 6) Easy to parallel. FStructure Silicon N-channel	Original	PDF	2SK2792 2SK2792
F10F35VX2 Abstract: 2SK2799 Text: SHINDENGEN VX-2 Series Power MOSFET 2SK2799 F10F35VX2 N-Channel Enhancement type OUTLINE DIMENSIONS Case : FTO-220 Case E-pack (Unit : mm) 350V 10A FEATURES ● Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. ● The static Rds(on) is small.	Original	PDF	2SK2799 F10F35VX2) FTO-220 Singl001 F10F35VX2 2SK2799
mosfet 600v Abstract: mosfet 600v 600V MOSFET 600V,4A mosfet 600V N-CHANNEL parallel mosfet parallel MOSFET Transistors 2SK2792 Text: Transistors Switching 600V, 4A 2SK2792 FFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Gate-source voltage (VGSS) guaranteed to be ±30V. 5) Easily designed drive circuits. 6) Easy to parallel. FStructure Silicon N-channel	Original	PDF	2SK2792 mosfet 600v mosfet 600v 600V MOSFET 600V,4A mosfet 600V N-CHANNEL parallel mosfet parallel MOSFET Transistors 2SK2792
Hitachi 45 DX Abstract: Hitachi DSA002780 Text: 2SK2795 Silicon N-Channel MOS FET UHF Power Amplifier ADE-208-466 A 2nd. Edition Features • High power output, High gain, High effeciency PG = 11dB, Pout = 24dBm, ηD = 40 %min. f = 836.5MHz • Compact package capable of surface mounting Outline This Device is sensitive to Electro Static Discharge.	Original	PDF	2SK2795 ADE-208-466 24dBm, Hitachi 45 DX Hitachi DSA002780
2SK2796 Abstract: Hitachi DSA00117 Text: 2SK2796 L , 2SK2796(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-534C (Z) 4th. Edition Jul. 1998 Features • Low on-resistance R DS(on) = 0.12Ω typ. • 4V gate drive devices. • High speed switching Outline DPAK \|1 4 4 D 1 2 3 G S 1 2	Original	PDF	2SK2796 ADE-208-534C Hitachi DSA00117
Untitled Abstract: No abstract text available Text: 2SK2797 Power F-MOS FETs 2SK2797 Tentative Silicon N-Channel MOS Unit : mm For high-speed switching For high-frequency power amplification 6.5±0.1 5.3±0.1 ● High-speed switching : tf=15ns ● No secondary breakdown Unit VDSS 200 V Gate-Source voltage	Original	PDF	2SK2797 2SK2797 SC-63
Untitled Abstract: No abstract text available Text: 2SK758 Power F-MOS FETs 2SK2790 Tentative Silicon N-Channel Power F-MOS Unit : mm • Features ● ● High-speed switching 6.0±0.5 ● No secondary breakdown ■ Applications ● Motor drive 1.0±0.1 1.5max. 1.1max. 2.0 High-speed switching 10.5min. ●	Original	PDF	2SK758 2SK2790
2SK2797 Abstract: No abstract text available Text: Power F-MOS FETs 2SK2797 Silicon N-Channel Power F-MOS FET • Features unit: mm M Di ain sc te on na tin nc ue e/ d ● Avalanche energy capacity guaranteed: EAS > 10mJ ● High-speed switching: tf = 15ns ● No secondary breakdown Symbol Ratings Unit Drain to Source breakdown voltage	Original	PDF	2SK2797 2SK2797
2SK2791 Abstract: No abstract text available Text: Ordering number:ENN6437 N-Channel Silicon MOSFET 2SK2791 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · 4V drive. unit:mm 2083B [2SK2791] 2.3 1.5 6.5 5.0 0.5 7.0 5.5 4 1.2 7.5 0.8 1.6	Original	PDF	ENN6437 2SK2791 2083B 2SK2791] 2092B 2SK2791
2sk2799 Abstract: F10F35VX2 mosfet 350v 10A Text: SHINDENGEN VX-2 Series Power MOSFET 2SK2799 F10F35VX2 N-Channel Enhancement type OUTLINE DIMENSIONS Case : FTO-220 (Unit : mm) 350V 10A FEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small.	Original	PDF	2SK2799 F10F35VX2) FTO-220 Aval001 2sk2799 F10F35VX2 mosfet 350v 10A

Untitled Abstract: No abstract text available Text: Transistors Switching 600V, 4A 2SK2792 •F e a tu re s 1) • E x te r n a l d im e n s io n s (U nits: m m ) L o w o n -re sista n ce . 2) H ig h -s p e e d s w itc h in g . 3) W id e S O A (safe o p e ra tin g area). 4) G a te -s o u rc e v o lta g e g u a ra n te e d	OCR Scan	PDF	2SK2792 O-220FN 0Dlb713 O-220FN O220FP T0-220FP, O-220FP.
Untitled Abstract: No abstract text available Text: Panasonic P o w e r F -M O S F E T s 2SK2797 Tentative Silicon N-Channel MOS Unit : mm For high-speed switching For high-frequency power amplification • Features • Avalanche energy capability guaranteed : EAS > lOmJ • High-speed switching : tf=15ns	OCR Scan	PDF	2SK2797 SC-63
Untitled Abstract: No abstract text available Text: 2SK2796 L , 2SK2796(S) Silicon N Channel MOS FET High Speed Power Switching HITACHI Features • Low on-resistance R ds(oii) = 0.12Í2 typ. • 4V gate drive devices. • High speed switching Outline DPAK \|1 Í I 1. 2. 3. 4. G ate Drain S ource Drain ADE-208-534C (Z)	OCR Scan	PDF	2SK2796 ADE-208-534C 2SK2796Ã
333Q Abstract: 2SK2790 Text: Panasonic P o w e r F -M O S F E T s 2SK2790 Tentative Silicon N-Channel Power F-MOS • Features • Low ON-resistance Rds(oii) • High-speed switching • No secondary breakdown ■Applications • High-speed switching • Motor drive Absolute Maximum Ratings	OCR Scan	PDF	2SK2790 VGS-10V, 333Q
2SK2793 Abstract: No abstract text available Text: Transistors Switching 500V, 5A 2SK2793 •F e a tu re s ^External dim ensions (Unit: mm) 1) Low on-resistance. 2) High-speed switching. 3) W ide SOA (safe operating area). 4) G ate-sonrce voltage gnaranteed at V gss = ± 3 0 V . 5) Easily designed drive circuits.	OCR Scan	PDF	2SK2793 O-220FN 2SK2793
Untitled Abstract: No abstract text available Text: 2SK2796 L , 2SK2796 (S) Silicon N Channel MOS FET High Speed Power Switching HITACHI Features • Low on-resistance EWn) = 0.12Otyp. • 4V gate drive devices. • High speed switching Outline DPAK i # 1. 2. 3. 4. 1 122 G ate Drain Source Drain ADE-208-534 A	OCR Scan	PDF	2SK2796 12Otyp. ADE-208-534 oK2796
Untitled Abstract: No abstract text available Text: Transistors Switching 500V, 5A 2SK2793 •F e a tu re s 1) Low on-resistance. 2) High-speed switching. ►External dim ensions (Unit: mm) ,+ 0 .3 3 - -+ 0 .3 0.1 R -0 .1 ¿ 3 .2 ± 0 .g •S tru c tu re Silicon N-channel M O SFET transistor ,2.54±0,5 (1 )(2){3)	OCR Scan	PDF	2SK2793 O-220FN 00A//iS
2SK2540 Abstract: 2SD2576 2sd2396 TA143E 2SK2459N 2SD 92 M C2N3904 2SB1569A 2SD2061 2SD1189F Text: Transistors/^ Leaded Type Quick Reference MOS FET V d ss V 60 100 200 250 300 450 500 600 800 Page b (A) 2 2SK2262 (MRT) 2SK2294 (TO -220FN ) 3 2SK2792 (T 0 -2 2 0 F N ) 4 2SK2459N (TO -220FN ) 5 2SK2460N (T 0-220FN ) 2SK2713 (T 0 -2 2 0 F N ) 2SK2793 (T 0 -2 2 0 F N )	OCR Scan	PDF	2SK2262 2SK2294 -220FN 2SK2792 2SK2459N 2SK2460N 0-220FN 2SK2713 2SK2793 2SK2540 2SD2576 2sd2396 TA143E 2SK2459N 2SD 92 M C2N3904 2SB1569A 2SD2061 2SD1189F
10EFI Abstract: No abstract text available Text: Transistors Switching 500V, 5A 2SK2793 •F e a tu re s • E x t e r n a l d im e n s io n s {U nit: m m ) 1) L o w on -re sista n ce. 2) H ig h -s p e e d s w itc h in g . 3 ) W id e S O A (safe o p e ra tin g area). 4 ) G a te -s o n rce vo lta g e g n a ra n te e d	OCR Scan	PDF	2SK2793 10/is, 10EFI
Untitled Abstract: No abstract text available Text: 2SK2794 Silicon N-Channel MOS FET UHF Power Amplifier HITACHI Features • H igh power output, H ig h gain, H ig h e fficie n cy PG = 8.0dB, Pout = 3 ld B m , riD = 60 % m in. f = 8 36.5M H z • Com pact package capable o f surface m ounting Outline RP8P	OCR Scan	PDF	2SK2794 ADE-208-465

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2SK279 Search Results

2SK279 Result Highlights (3)

2SK279 Price and Stock

Renesas Electronics Corporation 2SK2796STL-E

Renesas Electronics Corporation 2SK2796STLEZZZZ

2SK279 Datasheets (33)

2SK279 Datasheets Context Search

2SK2796L

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2SK2794

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2SK2792

F10F35VX2

mosfet 600v

Hitachi 45 DX

2SK2796

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2SK2797

2SK2791

2sk2799

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333Q

2SK2793

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2SK2540

10EFI

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