Untitled
Abstract: No abstract text available
Text: SHINDENGEN VX-2 Series Power MOSFET 2SK2799 F10F35VX2 N-Channel Enhancement type OUTLINE DIMENSIONS Case : FTO-220 Case E-pack (Unit : mm) 350V 10A FEATURES ●Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. ●The static Rds(on) is small.
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2SK2799
F10F35VX2)
FTO-220
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F10F35VX2
Abstract: 2SK2799
Text: SHINDENGEN VX-2 Series Power MOSFET 2SK2799 F10F35VX2 N-Channel Enhancement type OUTLINE DIMENSIONS Case : FTO-220 Case E-pack (Unit : mm) 350V 10A FEATURES ● Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. ● The static Rds(on) is small.
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2SK2799
F10F35VX2)
FTO-220
Singl001
F10F35VX2
2SK2799
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2sk2799
Abstract: F10F35VX2 mosfet 350v 10A
Text: SHINDENGEN VX-2 Series Power MOSFET 2SK2799 F10F35VX2 N-Channel Enhancement type OUTLINE DIMENSIONS Case : FTO-220 (Unit : mm) 350V 10A FEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small.
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Original
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PDF
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2SK2799
F10F35VX2)
FTO-220
Aval001
2sk2799
F10F35VX2
mosfet 350v 10A
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Untitled
Abstract: No abstract text available
Text: Power 1. Absolute Maximum Ratings MOS F E T Specification Te = 2 5 X 3 Item Symbol Condition Storage Temperature T i ti Channel Temperature Tch 15 0 Drain-Source Voltage V dss 3 5 0 Gate-Sourse Voltage V ±3 0 Drain Current (DC) ID 10 (Peak) I DP 3 0 IS
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OCR Scan
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2SK2799
DD02730
2SK2799
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Untitled
Abstract: No abstract text available
Text: Power MOSFETs VX-II series N-Channel, Enhancement type /X X V 1 E-pack SMD Surface Mount E-pack (Lead type) V dss . ry i 2SK2177 2SK2178 2SK2179 Id . Pt . Ï.M . . Ï W I . _ . l y . i . . _ 10 15 20 40 ±30 ±30
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STO-220
2SK2177
2SK2178
2SK2179
2SK2181
2SK2184
2SK2187
2SK2191
FTO-220
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