2SK280 Search Results

Contextual Info: 2SK2806-01 N-channel MOS-FET FAP-IIIB Series 30V > Features - 0,02Ω 35A 30W > Outline Drawing High Current Low On-Resistance No Secondary Breakdown Low Driving Power Avalanche Rated > Applications - Motor Control - General Purpose Power Amplifier - DC-DC converters

Contextual Info: 2SK2807-01L,S N-channel MOS-FET FAP-IIS Series 30V > Features - 20mΩ ±35A 30W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated > Applications

Contextual Info: 2SK2808-01MR N-channel MOS-FET FAP-IIS Series 30V > Features - 20mΩ ±35A 20W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated > Applications

2SK2809-01MR

Abstract: 0257-R-0
Contextual Info: I SPECIFICATION DEVICE NAME : TYPE NAME : SPEC. NO. : Power M O S FE T 2SK2809-01MR Fuji Electric Co.,Ltd. This Specification is subject to change without notice. DATE NAME DRAWN |aPPR0VED Fuji Electric Co.,Ltd. JI CHECKED, | J_ w -Y 0257-R-0 Ma 1.Scope

2SK2804

Abstract: FM20 v40150
Contextual Info: 2SK2804 External dimensions 1 . FM20 Absolute Maximum Ratings Electrical Characteristics Ta = 25ºC Symbol Ratings Unit Symbol VDSS 450 V V(BR) DSS VGSS ±30 V ID ±5 A ±20 I GSS I DSS I D = 100µA, VGS = 0V VGS = ±30V 100 µA VDS = 450V, VGS = 0V

mosfet power amplifier

Abstract: 2SK2808-01MR mosfet low vgs mosfet 830
Contextual Info: 2SK2808-01MR FUJI POWER MOSFET 200509 N-CHANNEL SILICON POWER MOSFET FAP-IIIB SERIES Features Outline Drawings High speed switching Low on-resistance No secondary breakdown Low driving power High voltage Avalanche-proof TO-220F Applications Switching regulators

Contextual Info: 2SK2809-01MR N-channel MOS-FET FAP-IIIB Series 60V > Features - 0,01Ω 50A 50W > Outline Drawing High Current Low On-Resistance No Secondary Breakdown Low Driving Power Avalanche Rated > Applications - Motor Control - General Purpose Power Amplifier - DC-DC converters

12v power amplifier 30w

Abstract: 2SK2806-01
Contextual Info: F U JI 2SK2806-01 IM iL ô lE U iJ C â K ë FAP-IIIB Series N-channel MOS-FET 30V 0,02Q 35A 30W > Features - > Outline Drawing High Current Low On-Resistance No Secondary Breakdown Low Driving Power Avalanche Rated > Applications - Motor Control General Purpose Power Amplifier

Hitachi DSA00276

Contextual Info: 2SK2800 Silicon N Channel MOS FET High Speed Power Switching ADE-208-513G Z 8th. Edition Jul. 1998 Features • Low on-resistance R DS(on) = 15 mΩ typ. • High speed switching • Low drive current • 4V gate drive device can be driven from 5V source

003A

Abstract: 4502 MOSFET
Contextual Info: SPECIFICATION DEVICE NAME : TYPE NAME Power MOSFET : 2SK2807-01 L,S SPEC. NO. Fuji Electric Co.,Ltd. This Specification is subject to change without notice. DATE NAM E ¡APPROVED I DR A W N CHECKED Í Fuji Electric Co.,Ltd. V, Y 0257-R-004a I.Scope This specifies Fuji Power MOSFET 2SK2807-01L.S

2SK2808-01MR

Contextual Info: SPECIFICATION DEVICE NAME : Power MOSFET TYPE NAME 2SK2808-01 MR - SPÊC.NO. Fuji Electric CoMLtd. This Specification is subject to change without notice. DATE ' NAME APPROVED Fuji Electric Co.,Ltd. CHECKED I ' ' I DWG. NO. D RA W N / 1/0 Y 0257 -R -00 4a

2SK2803

Abstract: FM20
Contextual Info: 2SK2803 Absolute Maximum Ratings External dimensions 1 . FM20 Ta = 25ºC Electrical Characteristics Symbol Ratings Unit Symbol VDSS 450 V V(BR) DSS VGSS ±30 V ID ±3 A ±12 ID (pulse) *1 PD EAS *2 min 450 Ratings typ I GSS I DSS (Ta = 25ºC) max Unit

12v power amplifier 30w

Abstract: 2SK2807-01L
Contextual Info: 2SK2807-01L,S N-channel MOS-FET FAP-IIS Series 30V > Features - 20mΩ ±35A 30W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated > Applications

IRF P CHANNEL MOSFET

Abstract: SD1575 P Channel Power MOSFET IRF
Contextual Info: FUJI 2SK2806-01 e u s c u ija u ^ N-channel MOS-FET 30V 0,02& 35A 30W FAP-IIIB Series > Features - > Outline Drawing High Current Low On-Resistance No Secondary Breakdown Low Driving Power Avalanche Rated > Applications - Motor Control General Purpose Power Amplifier

l0241

Contextual Info: SPECIFICATION DEVICE NAME : TYPE NAME : SPEC. NO. : Power MOSFET 2SK2809-01MR Fuji Electric Co.Ltd. This Specification is subject to change without notice. DATE NAME APPROVED Fuji Electric Co.,Ltd. DRAW N/ CHECKED/ w Y 0257-R-004a 1.Scope This specifies Fuji Power MOSFET 2SK2809-01MR

Contextual Info: 2SK2800 Silicon N Channel MOS FET High Speed Power Switching HITACHI ADE-208-513G Z 8th. Edition June 1, 1998 Features • Low on-resistance R ds(o„) = 15 m il typ. • High speed switching • Low drive current • 4V gate drive device can be driven from 5V source

220TQ

Contextual Info: MOSFETs FAP-IIIB Series - Logic Level Operation, Ultra Low R d s ON , High Avalanche Ruggedness 30 - 60 Volts Device Type 2SK2806-01 2SK2807-01L.S 2SK2808-01 MR 2SK2890-01 MR 2SK2687-01 2SK2688-01L.S 2SK2689-01MR 2SK2892-01R 2SK2891-01 2SK2893-01 2SK2894-01R

FUJI ELECTRIC

Contextual Info: SPECIFICATION DEVICE NAME : Power MOSFET TYPE NAME 2SK2807-01 L,S : SPEC. NO. Fuji Electric Co.,Ltd. This Specification is subject to change without notice. DATE D R AW N NAME APPROVED Fuji Electric Co.,Ltd. CHECKED U I4- Y 0257-R-004a 1.Scope This specifies Fuji Power MOSFET 2SK2807-01 L,S

Contextual Info: 2SK2809-01MR FU JI N-channel MOS-FET Series F A P -IIIB 60V 0 ,0 1 Q 50 A 50W > Features - High Current Low On-Resistance No Secondary Breakdown Low Driving Power Avalanche Rated > Applications - Motor Control General Purpose Power Amplifier DC-DC converters

Contextual Info: FU JI aiLöEiruöüe 2SK2806-01 N-channel MOS-FET FAP-IIIB Series 30V > Features - 0 ,0 2 Q 35A 30W > Outline Drawing High Current Low On-Resistance No Secondary Breakdown Low Driving Power Avalanche Rated > Applications - Motor Control General Purpose Power Amplifier

2SK2809-01MR

Contextual Info: 2SK2809-01MR N-channel MOS-FET FAP-IIIB Series 60V > Features - 0,01Ω 50A 50W > Outline Drawing High Current Low On-Resistance No Secondary Breakdown Low Driving Power Avalanche Rated > Applications - Motor Control - General Purpose Power Amplifier - DC-DC converters

2SK2806-01

Contextual Info: SPECIFICATION DEVICE NAME : TYPE NAME Power MOSFET : 2SK2806-01 SPEC. NO. Fuji Electric Co.Ltd. This Specification is subject to change without notice. DATE NAME APPROVED Fuji Electric Co.,Ltd. DRAWN CHECKED s § M ? iY 0257-fi-004a 1 1.Scope This specifies Fuji Power MOSFET 2SK2806-01

Hitachi DSA00276

Contextual Info: 2SK2802 Silicon N Channel MOS FET Low Frequency Power Switching ADE-208-537C Z 4th. Edition Mar. 2001 Features • Low on-resistance R DS(on) = 0. 2Ω typ. (VGS = 4 V, I D = 100 mA) • 2.5V gate drive devices. • Small package (MPAK) Outline MPAK 3 1

Hitachi DSA002758

Contextual Info: 2SK2802 Silicon N Channel MOS FET Low Frequency Power Switching ADE-208-537 1st. Edition Features • Low on-resistance R DS on = 0. 2Ω typ. (VGS = 4 V, I D = 100 mA) • 2.5V gate drive devices. • Small package (MPAK) Outline 2SK2802 Absolute Maximum Ratings (Ta = 25°C)