2SK285 Search Results

Contextual Info: 2SK2855 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK2855 UHF BAND AMPLIFIER APPLICATION Unit in mm MAXIMUM RATINGS Ta = 25°C CHARACTERISTIC SYMBOL RATING UNIT Drain-Source Voltage VDSS 10 V Gate-Source Voltage VGSS ±6 V ID 1.0 A Drain Power Dissipation

transistor marking 7D

Abstract: ED34 2SK2855 7d marking
Contextual Info: TOSHIBA 2SK2855 TOSHIBA FIELD EFFECT TRANSISTOR UHF BAND AMPLIFIER APPLICATION SILICON N CHANNEL MOS TYPE 2SK2855 MAXIMUM RATINGS Ta = 25°C CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage Drain Current Drain Power Dissipation Channel Temperature

Contextual Info: T O SH IB A 2SK2854 TOSHIBA FIELD EFFECT TRANSISTOR UHF BAND AMPLIFIER APPLICATION SILICON N CHANNEL MOS TYPE 2SK2854 MAXIMUM RATINGS Ta = 25°C CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage Drain Current Drain Power Dissipation Channel Temperature

2SK2850-01

Contextual Info: 2SK2850-01 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-2S Series Outline Drawings TO-3P Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply

Contextual Info: 2SK2850-01 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-2S Series Outline Drawings TO-3P Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply

Contextual Info: DATA S H EE T MOS FIELD EFFECT TRANSISTOR 2SK2858 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING DESCRIPTION PACKAGE DRAWING Unit : mm The 2SK2858 is a switching device which can be driven directly by a 2.1 ± 0.1 2.5-V power source. 1.25 ± 0.1

2SK2850

Abstract: 2SK2850-01 SK2850 T0-247
Contextual Info: SPECIFICATION DEVICE NAME : Power MOSFET TYPE NAME 2SK2850-01 : SPEC. NO. Fuji Electric Co.,Ltd. This Specification is subject to change without notice. DATE NAME APPROVED Fuji Electric Co.,Ltd. DR AW N CHECKED •I I II 1/ L-] -• ; I I.Scope This specifies Fuji Power MOSFET 2SK2850-01

2SK2858

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2858 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING PACKAGE DRAWING Unit : mm DESCRIPTION The 2SK2858 is a switching device which can be driven directly by a 2.1 ± 0.1 0.3 +0.1 –0 2.5-V power source.

2SK2854

Contextual Info: 2SK2854 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK2854 UHF BAND AMPLIFIER APPLICATION Unit in mm MAXIMUM RATINGS Ta = 25°C CHARACTERISTIC SYMBOL RATING UNIT Drain-Source Voltage VDSS 10 V Gate-Source Voltage VGSS ±6 V ID 0.5 A Drain Power Dissipation

2SK2856

Abstract: transistor 4809
Contextual Info: TOSHIBA 2SK2856 TOSHIBA FIELD EFFECT TRANSISTOR GaAs N CHANNEL SINGLE GATE MODULATION DOPE TYPE 2SK2856 UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • Low Noise Figure : NF = 0.7dB f=1.5GHz • High Gain : Ga = 21.5dB (f=1.5GHz) MAXIMUM RATINGS (Ta = 25°C)

Contextual Info: 2SK2855 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK2855 UHF BAND AMPLIFIER APPLICATION Unit in mm Note The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These TOSHIBA

TOSHIBA Semiconductor Reliability Handbook

Abstract: 2SK2855
Contextual Info: 2SK2855 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK2855 UHF BAND AMPLIFIER APPLICATION Note The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These TOSHIBA products are neither intended nor warranted for any other use.Do not use

2SK2855

Contextual Info: 2SK2855 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK2855 UHF BAND AMPLIFIER APPLICATION Unit in mm MAXIMUM RATINGS Ta = 25°C CHARACTERISTIC SYMBOL RATING UNIT Drain-Source Voltage VDSS 10 V Gate-Source Voltage VGSS ±6 V ID 1.0 A Drain Power Dissipation

D1164

Abstract: 2SK2857 marking NX ic 451
Contextual Info: データ・シート MOS 形電界効果トランジスタ MOS Field Effect Transistor 2SK2857 N チャネル MOS FET スイッチング用 2SK2857 は，4V 駆動タイプの N チャネル縦型 MOS FET で，5V 電源系 IC の出力による直接駆動が可能なスイッ

D1164

Abstract: 2SK2857
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2857 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING DESCRIPTION PACKAGE DRAWING Unit : mm The 2SK2857 is a switching device which can be driven directly 4.5±0.1 by a 5V power source. The 2SK2857 features a low on-state resistance and excellent

smd marking NX

Abstract: nx marking smd 2SK2857 MOSFET marking smd RG 265
Contextual Info: MOSFET SMD Type MOS Field Effect Transistor 2SK2857 SOT-89 Features Unit: mm 4.50 1.50 +0.1 -0.1 +0.1 -0.1 +0.1 1.80-0.1 +0.1 2.50-0.1 Low On-state resistance : MAX. VGS = 10 V, ID = 2.5 A 1 3 2 +0.1 0.53-0.1 +0.1 0.48-0.1 +0.1 0.44-0.1 +0.1 0.80-0.1 MAX. (VGS = 4 V, ID = 1.5 A)

2SK2856

Abstract: pi1510
Contextual Info: TOSHIBA 2SK2856 TOSHIBA FIELD EFFECT TRANSISTOR GaAs N CHANNEL SINGLE GATE MODULATION DOPE TYPE 2SK2856 UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • Low Noise Figure : NF = 0.7dB f=1.5GHz • High Gain : Ga = 21.5dB (f=1.5GHz) MAXIMUM RATINGS (Ta = 25°C)

Contextual Info: IC SMD Type Type SMD Product specification 2SK2857 SOT-89 Features Unit: mm 4.50 1.50 +0.1 -0.1 +0.1 -0.1 +0.1 1.80-0.1 +0.1 2.50-0.1 Low On-state resistance : MAX. VGS = 10 V, ID = 2.5 A 1 3 2 +0.1 0.53-0.1 +0.1 0.48-0.1 +0.1 0.44-0.1 +0.1 0.80-0.1 MAX. (VGS = 4 V, ID = 1.5 A)

UAA 1250

Abstract: H1250
Contextual Info: SPECIFICATION D EVICE NAME : Power MOSFET 2SK2850-01 TYPE NAME - SPEC. NO. : Fuji Electric Co.Ltd. This Specification is subject to change without notice. DA TE NAME APPROVED Fuji Electric Co.,Ltd. DRAWN CHECKED s' il i 1/ Mi h I.S co p e This specifies Fuji Power MOSFET 2SK2850-01

2SA2859

Abstract: 2SA285
Contextual Info: Ordering number:EN5851 N Channel Silicon MOSFET 2SK2859 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low On resistance. · Ultrahigh-speed switching. · 4V drive. unit:mm 2149 [2SA2859] 5 4 1.8max 1 1.27 0.595 0.43 0.2 1 : No Contact

2SK2854

Contextual Info: 2SK2854 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK2854 UHF BAND AMPLIFIER APPLICATION Unit in mm MAXIMUM RATINGS Ta = 25°C CHARACTERISTIC SYMBOL RATING UNIT Drain-Source Voltage VDSS 10 V Gate-Source Voltage VGSS ±6 V ID 0.5 A Drain Power Dissipation

2sk2850

Abstract: 2SK2850-01 16V8 2sk2850 DATASHEET 2sk2850 transistor NC010
Contextual Info: 2SK2850-01 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-2S Series Outline Drawings TO-3P Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply

nf 922

Contextual Info: T O SH IB A 2SK2856 TOSHIBA FIELD EFFECT TRANSISTOR GaAs N CHANNEL SINGLE GATE MODULATION DOPE TYPE 2SK2856 UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise Figure : NF = 0.7dB f=1.5GHz High Gain : Ga = 21.5dB (f= 1.5GHz) MAXIMUM RATINGS (Ta = 25°C)

Contextual Info: 2SK2851 Silicon N Channel MOS FET High Speed Power Switching REJ03G1036-0200 Previous: ADE-208-478 Rev.2.00 Sep.07,2005 Features • Low on-resistance RDS(on) = 0.055 Ω typ. (at VGS = 10 V, ID = 2.5 A) • 4 V gate drive devices. • Large current capacitance