Untitled
Abstract: No abstract text available
Text: 2SK3019 N-Channel MOSFET P b Lead Pb -Free 3 1 2 1. GATE FEATURES: * Low on-resistance * Fast switching speed * Low voltage drive makes this device ideal for portable equipment * Easily designed drive circuits * Easy to parallel 2. SOURCE 3. DRAIN SOT-523(SC-75)
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2SK3019
OT-523
SC-75)
03-Jun-2011
OT-523
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2SA20
Abstract: "dual TRANSISTORs" resistance dual audio circuit diagram 2SA2018 2SK3019
Text: EMF6 Transistors Power management dual transistors EMF6 2SA2018 and 2SK3019 are housed independently in a EMT6 package. (2) 0.5 0.5 1.0 1.6 (3) (4) (5) (1) 1.2 1.6 0.5 (6) 0.13 !Features 1) Power switching circuit in a single package. 2) Mounting cost and area can be cut in half.
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2SA2018
2SK3019
2SA20
"dual TRANSISTORs" resistance
dual audio circuit diagram
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Untitled
Abstract: No abstract text available
Text: EM6K1 Transistor 2.5V Drive Nch+Nch MOS FET EM6K1 zExternal dimensions Unit : mm zStructure Silicon N-channel MOS FET EMT6 1.6 0.5 1.0 0.5 0.5 zFeatures 1) Two 2SK3019 transistors in a single EMT package. 2) The MOS FET elements are independent, eliminating
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2SK3019
100mA)
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PDF
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2sk3019
Abstract: 2SA2018
Text: UMF6N Transistors Power management dual transistors UMF6N 2SA2018 and 2SK3019 are housed independently in a UMT package. 0.65 (1) 1.25 2.0 1.3 (3) (2) (4) (5) (6) 0.2 !Features 1) Power switching circuit in a single package. 2) Mounting cost and area can be cut in half.
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2SA2018
2SK3019
SC-88
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2sk3019
Abstract: 2SC5585
Text: EMF9 Transistors Power management dual transistors EMF9 2SC5585 and 2SK3019 are housed independently in a EMT6 package. zApplication Power management circuit zStructure Silicon epitaxial planar transistor ROHM : EMT6 (5) (2) 0.5 0.5 1.0 1.6 (3) (4) (1) 1.2
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2SC5585
2SK3019
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2SC5585
Abstract: 2SK3019
Text: UMF9N Transistors Power management dual transistors UMF9N 2SC5585 and 2SK3019 are housed independently in a UMT package. 0.65 (1) 1.25 2.0 1.3 (3) (2) (4) (5) (6) 0.2 !Features 1) Power switching circuit in a single package. 2) Mounting cost and area can be cut in half.
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2SC5585
2SK3019
SC-88
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2SK3019
Abstract: 4405 2SK301
Text: SPICE PARAMETER 2SK3019 by ROHM TR Div. * 2SK3019 NMOS model * Date: 2006/09/07 .MODEL 2SK3019 NMOS + LEVEL=3 + L=2.0000E-6 + W=.27 + KP=1.0298E-6 + RS=.8 + RD=.36503 + VTO=1.4405 + RDS=2.8571E9 + TOX=2.0000E-6 + CGSO=37.037E-15 + CGDO=35.457E-12 + CBD=18.868E-12
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2SK3019
M2SK3019
0000E-6
0298E-6
8571E9
037E-15
457E-12
868E-12
2SK3019
4405
2SK301
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2SK3019
Abstract: EMF33
Text: EMF33 Transistors Power management, Dual-chip Bipolar Transistor EMF33 zApplications Power management circuit zDimensions Unit : mm EMT6 1.6 0.5 1.0 0.5 0.5 zFeatures 1) DTB513Z (digital transistor) and 2SK3019 (MOS FET) are housed independently in the EMT6 package.
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EMF33
DTB513Z
2SK3019
2SK3019
EMF33
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JAPAN transistor
Abstract: 30v N channel MOS FET 2SK3019 ON503
Text: EM6K1 Transistor 2.5V Drive Nch+Nch MOS FET EM6K1 zExternal dimensions Unit : mm zStructure Silicon N-channel MOS FET EMT6 1.6 0.5 1.0 0.5 0.5 zFeatures 1) Two 2SK3019 transistors in a single EMT package. 2) The MOS FET elements are independent, eliminating
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2SK3019
100mA)
JAPAN transistor
30v N channel MOS FET
ON503
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-523 Plastic-Encapsulate MOSFETS 2SK3019 N-channel MOSFET SOT-523 FEATURES z Low on-resistance z Fast switching speed z Low voltage drive makes this device ideal for portable equipment z Easily designed drive circuits
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OT-523
2SK3019
OT-523
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PDF
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-523 Plastic-Encapsulate MOSFETS 2SK3019 N-channel MOSFET SOT-523 FEATURES z Low on-resistance z Fast switching speed z Low voltage drive makes this device ideal for portable equipment z Easily designed drive circuits
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OT-523
2SK3019
OT-523
100mA
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2SC5585
Abstract: 2SK3019
Text: EMF9 Transistors Power management dual transistors EMF9 2SC5585 and 2SK3019 are housed independently in a EMT6 package. !Application Power management circuit !Structure Silicon epitaxial planar transistor ROHM : EMT6 (5) (2) 0.5 0.5 1.0 1.6 (3) (4) (1) 1.2
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2SC5585
2SK3019
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Untitled
Abstract: No abstract text available
Text: 2SK3019T N-Channel MOSFET P b Lead Pb -Free 3 1 2 FEATURES: 1. GATE * Low on-resistance * Fast switching speed * Low voltage drive makes this device ideal for portable equipment * Easily designed drive circuits * Easy to parallel 2. SOURCE 3. DRAIN SOT-523(SC-75)
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2SK3019T
OT-523
SC-75)
03-Jun-2011
OT-523
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PDF
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Untitled
Abstract: No abstract text available
Text: EM6K1 Transistor 2.5V Drive Nch+Nch MOS FET EM6K1 zExternal dimensions Unit : mm zStructure Silicon N-channel MOS FET EMT6 1.6 0.5 1.0 0.5 0.5 zFeatures 1) Two 2SK3019 transistors in a single EMT package. 2) The MOS FET elements are independent, eliminating
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2SK3019
100mA)
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2SA2018
Abstract: 2SK3019 T108 2SA20
Text: UMF6N / IMF6 Transistors Power management dual transistors UMF6N / IMF6 2SA2018 and 2SK3019 are housed independently in a UMT or SMT package. !External dimensions (Units : mm) !Application Power management circuit 0.65 (1) 1.25 2.0 1.3 (3) (2) (4) (5) (6)
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2SA2018
2SK3019
SC-88
T108
2SA20
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Untitled
Abstract: No abstract text available
Text: WILLAS FM120-M+ THRU 2SK3019TT1 FM1200-M+ SOT-523 Plastic-Encapsulate MOSFETS 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product Package outline N-channel MOSFET Features FEATURES • Batch process design, excellent power dissipation offers
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OD-123+
OT-523
FM120-M+
2SK3019T
FM1200-M+
OD-123H
FM120-MH
FM130-MH
FM140-MH
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2SK3019
Abstract: SC-75A
Text: 2SK3019 Transistor Small switching 30V, 0.1A 2SK3019 !External dimensions (Units : mm) !Applications Interfacing, switching (30V, 100mA) 1.6±0.2 0.7±0.1 1.0±0.1 0.1±0.55 (2) (2) (3) 0.8±0.1 (1) (1) 0.5 0.3 +0.1 −0.05 1.6±0.1 0.5 0~0.1 0.15±0.05
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2SK3019
100mA)
SC-75A
OT-416
2SK3019
SC-75A
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2TR13
Abstract: 2SK3019
Text: EM6K1 Transistor Small switching 30V, 0.1A EM6K1 !External dimensions (Units : mm) !Features 1) Two 2SK3019 transistors in a single EMT package. 2) The MOSFET elements are independent, eliminating interference. 3) Mounting cost and area can be cut in half.
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2SK3019
100mA)
2TR13
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MOSFET IGSS 100A
Abstract: 30v N channel MOS FET 2SK3019 nch power mosfet
Text: 2SK3019 Transistor 2.5V Drive Nch MOS FET 2SK3019 zDimensions Unit : mm zStructure Silicon N-channel MOSFET EMT3 0.7 1.6 0.55 0.3 (1) 0.2 0.2 0.5 0.5 0.15 0.1Min. 0.8 (2) 1.6 (3) zApplications Interfacing, switching (30V, 100mA) 1.0 (1)Source zFeatures 1) Low on-resistance.
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2SK3019
100mA)
MOSFET IGSS 100A
30v N channel MOS FET
2SK3019
nch power mosfet
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Untitled
Abstract: No abstract text available
Text: Power management dual transistors EMF32 / UMF32N DTA143T and 2SK3019 are housed independently in a EMT6 package. Features 1) Power switching circuit in a single package. 2) Mounting cost and area can be cut in half. (3) (4) (5) (2) (1) 1.2 1.6 0.5 0.13
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EMF32
UMF32N
DTA143T
2SK3019
R1010A
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EMF32
Abstract: f32 TRANSISTOR 2SK3019 DTA143T UMF32 UMF32N F32 marking
Text: EMF32 / UMF32N Transistors Power management dual transistors EMF32 / UMF32N DTA143T and 2SK3019 are housed independently in a EMT6 package. (3) (4) 0.22 zFeatures 1) Power switching circuit in a single package. 2) Mounting cost and area can be cut in half.
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EMF32
UMF32N
DTA143T
2SK3019
f32 TRANSISTOR
UMF32
UMF32N
F32 marking
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2SK3019
Abstract: current Source Swithing
Text: EM6K1 Transistor Small switching 30V, 0.1A EM6K1 !External dimensions (Units : mm) !Features 1) Two 2SK3019 transistors in a single EMT package. 2) The MOSFET elements are independent, eliminating interference. 3) Mounting cost and area can be cut in half.
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2SK3019
100mA)
current Source Swithing
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02M45
Abstract: No abstract text available
Text: Data Sheet 2.5V Drive Nch MOSFET 2SK3019EB Structure Silicon N-channel MOSFET Dimensions Unit : mm EMT3F Features 1) High-speed switching. 2) Low voltage drive(2.5V drive). 3) Drive circuits can be simple. 4) Parallel use is easy. (3) (1) (2)
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2SK3019EB
2SK3019EB
Pw10s,
R1120A
02M45
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Untitled
Abstract: No abstract text available
Text: EMF9 Transistors Power management dual transistors EMF9 2SC5585 and 2SK3019 are housed independently in a EMT6 package. zApplication Power management circuit zStructure Silicon epitaxial planar transistor ROHM : EMT6 (5) (2) 0.5 0.5 1.0 1.6 (3) (4) (1) 1.2
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2SC5585
2SK3019
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