2SK31 Search Results

2SK313

Abstract: 2SK312 2SK313 FET HITACHI 2SK* TO-3 2sk312 hitachi
Contextual Info: blE T> m 4 l4tíÍD50S DD13G3G 7 b 3 ihith 2SK312,2SK313-HITACHI/ OPTOELECTRONICS SILICON N-CHANNEL MOS FET HIGH SPEED POWER SWITCHING, HIGH FREQUENCY POWER AMPLIFIER 3 O • FEATURES • Low O n -R esistan ce. • H igh S peed S w itc h in g . • H igh C utoff Frequency.

2SK3147S

Contextual Info: IC MOSFET SMD Type Silicon N Cannel MOSFET 2SK3147S TO-252 Features Low on-resistance typ. +0.15 1.50-0.15 RDS = 0.1 +0.15 6.50-0.15 +0.2 5.30-0.2 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 2.3 +0.1 0.60-0.1 3.80 +0.15 5.55-0.15 0.127 max +0.25 2.65-0.1 +0.1 0.80-0.1

Contextual Info: Transistors IC MOSFET SMD Type Product specification 2SK3109 TO-263 Features 30 V +0.1 1.27-0.1 Gate voltage rating Low on-state resistance +0.1 1.27-0.1 +0.2 4.57-0.2 Avalanche capability rated +0.1 0.81-0.1 2.54 Built-in gate protection diode +0.2 2.54-0.2

2SK3132

Abstract: K313 2SK313
Contextual Info: T O S H IB A 2SK3132 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M OSV 2 S K 3 1 32 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE TO-3P (L) APPLICATIONS

Contextual Info: 2SK3153 Silicon N Channel MOS FET High Speed Power Switching HITACHI 2nd. Edition February 1999 Features • Low on-resistance Rds = 65 m ii typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline TO-220FM Absolute Maximum Ratings Ta = 25 °C

Contextual Info: 2SK3135 L ,2SK3135(S) Silicon N Channel MOS FET High Speed Power Switching HITACHI ADE-208-695B (Z) 3rd. Edition February 1999 Features • Low on-resistance • = 6 m ii typ. Low drive current • 4 V gate drive device can be driven from 5 V source R DS(on)

Contextual Info: T O S H IB A 2SK3128 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSYI 2 S K 3 1 28 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE INDUSTRIAL APPLICATIONS U nit in mm APPLICATIONS 15.9 MAX.

2SK3129

Abstract: SC-65
Contextual Info: TO SH IBA 2SK3129 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSVI 2 S K 3 12 9 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm Low Drain-Source ON Resistance : RßS (ON) = 5.5 mH (Typ.)

2SK3128

Abstract: SC-65 mj 411 transistor
Contextual Info: TO SH IBA 2SK3128 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSVI 2 S K 3 1 28 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm Low Drain-Source ON Resistance : RßS (ON) = 9.5 mH (Typ.)

2SK3131

Contextual Info: T O S H IB A 2SK3131 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M O SV 2 S K 3 1 31 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE INDUSTRIAL APPLICATIONS Unit in mm TO-3P (L) APPLICATIONS

2SK3176

Abstract: SC-65
Contextual Info: TOSHIBA 2SK3176 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSV 2 S K 3 1 76 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS SWITCHING REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS • • • • INDUSTRIAL APPLICATIONS Unit in mm

DIODE S4 45a

Abstract: DIODE S4 92 2SK3127
Contextual Info: TOSHIBA 2SK3127 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSVI 2 S K 3 1 27 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE INDUSTRIAL APPLICATIONS Unit in mm TO-220FL APPLICATIONS

HITACHI 2SK* TO-3

Contextual Info: 2SK3149 Silicon N Channel MOS FET High Speed Power Switching HITACHI 2nd. Edition February 1999 Features • Low on-resistance R ds = 45 m ii typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline T O -220A B Absolute Maximum Ratings Ta = 25 °C

Contextual Info: 2SK3147 L ,2SK3147(S) Silicon N Channel MOS FET High Speed Power Switching HITACHI 1st. Edition February 1999 Features • Low on-resistance • • Rds = 0.1 Q. typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline DPAK-2 II

Contextual Info: 2SK3148 Silicon N Channel MOS FET High Speed Power Switching HITACHI 2nd. Edition February 1999 Features • Low on-resistance • Rds = 45 m ii typ. High speed switching • 4 V gate drive device can be driven from 5 V source Outline T O -2 2 0 F M Absolute Maximum Ratings Ta = 25 °C

2SK3114 equivalent

Abstract: 2sk3114 2SK3114 APPLICATION
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3114 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION The 2SK3114 is N-channel DMOS FET device that features a low gate charge and excellent switching characteristics, and PART NUMBER

2SK3110

Abstract: d1333
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3110 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION The 2SK3110 is N channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for high voltage applications such as DC/DC

2SK3111

Abstract: 2SK3111-S 2SK3111-ZJ MP-25
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3111 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION The 2SK3111 is N channel MOS FET device that PART NUMBER PACKAGE 2SK3111 TO-220AB 2SK3111-S TO-262 2SK3111-ZJ TO-263 features a low on-state resistance and excellent

KD510

Abstract: 2SK319 2SK320
Contextual Info: HI T A C H I /{ OPTO EL ECTRO NI CS > "44962Ö5 H I T A C H I / OPTOELECTRONICS! 73 DE I 44c][3205 mOlOOlM - • 73C 10014 D 2SK319,2SK320 SILICON N-CHANNEL MOS FET HIGH SPEED POWER SW ITCHING. HIGH FREQUENCY POWER AMPLIFIER • FEATURES • Low On-Resistance.

D1806

Abstract: 2SK3113B 2SK3113B-S15-AY 2SK3113B-ZK-E2-AY transistor types full 2SK3113B-ZK-E1-AY MP 6102
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3113B SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3113B is N-channel MOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter.

K3128

Abstract: 2SK3128
Contextual Info: 2SK3128 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI 2SK3128 Chopper Regulator, DC−DC Converter and Motor Drive Applications Low drain-source ON resistance : RDS (ON) = 9.5 mΩ (typ.) High forward transfer admittance : |Yfs| = 40 S (typ.)

Contextual Info: T O SH IB A 2SK3179 TOSHIBA FIELD EFFECT TRANSISTOR m— GaAs N CHANNEL SINGLE GATE MODULATION DOPE TYPE t # • m t m m U H F-SH F BAND LOW NOISE AMPLIFIER APPLICATIONS • Low Noise Figure • High Gain MAXIMUM RATINGS Ta = 25°C SYMBOL CHARACTERISTIC

Hitachi DSA00279

Contextual Info: 2SK3133 L , 2SK3133(S) Silicon N Channel MOS FET High Speed Power Switching Target Specification ADE-208-720 (Z) 1st. Edition January 1999 Features • Low on-resistance R DS(on) =7mΩ typ. • Low drive current • 4V gate drive device can be driven from 5V source

Hitachi DSA002749

Contextual Info: 2SK3148 Silicon N Channel MOS FET High Speed Power Switching 2nd. Edition February 1999 Features • • • Low on-resistance RDS = 45 mΩ typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline TO–220FM D G 1 2 1. Gate 2. Drain