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    2SK33 Search Results

    2SK33 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SK3307-A Renesas Electronics Corporation Nch Single Power Mosfet 60V 70A 9.5Mohm Mp-88/To-3P Visit Renesas Electronics Corporation
    2SK3305-AZ Renesas Electronics Corporation Switching N-Channel Power Mosfet Visit Renesas Electronics Corporation
    2SK3353-AZ Renesas Electronics Corporation Power MOSFETs for Automotive Visit Renesas Electronics Corporation
    2SK3386-Z-AZ Renesas Electronics Corporation Nch Single Power Mosfet 60V 34A 21Mohm Mp-3Z/To-252 Visit Renesas Electronics Corporation Buy
    2SK3356-A Renesas Electronics Corporation Switching N-Channel Power Mosfet Visit Renesas Electronics Corporation
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    2SK33 Price and Stock

    Toshiba America Electronic Components 2SK3320-BL(TE85L,F

    JFET N-CH USV
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    DigiKey 2SK3320-BL(TE85L,F Cut Tape 39,917 1
    • 1 $1.1
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    2SK3320-BL(TE85L,F Digi-Reel 39,917 1
    • 1 $1.1
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    2SK3320-BL(TE85L,F Reel 36,000 3,000
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    Avnet Americas 2SK3320-BL(TE85L,F Reel 52 Weeks 3,000
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    Mouser Electronics 2SK3320-BL(TE85L,F 14,432
    • 1 $0.96
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    • 100 $0.421
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    Chip1Stop 2SK3320-BL(TE85L,F Cut Tape 1,480
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    • 100 $0.363
    • 1000 $0.264
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    Rochester Electronics LLC 2SK3357-A

    2SK3357 - N-CHANNEL POWER MOSFET
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    DigiKey 2SK3357-A Bulk 75
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    Toshiba America Electronic Components 2SK3309(Q)

    MOSFET N-CH 450V 10A TO220FL
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    Quest Components 2SK3309(Q) 80
    • 1 $2.355
    • 10 $2.355
    • 100 $1.1775
    • 1000 $1.1775
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    Panasonic Electronic Components 2SK33720TL

    JFET N-CH 2MA SSSMINI3-F1
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    Rochester Electronics LLC 2SK3367-AZ

    SMALL SIGNAL N-CHANNEL MOSFET
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    DigiKey 2SK3367-AZ Bulk 217
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    Find more 2SK33 price and stock on Findchips.com

    2SK33 Datasheets (336)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SK33 Mitsubishi Scan PDF
    2SK33 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2SK33 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2SK33 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2SK33 Unknown Cross Reference Datasheet Scan PDF
    2SK33 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2SK33 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SK33 Unknown FET Data Book Scan PDF
    2SK33 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SK33 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SK33 Semico N-Channel Junction Field Effect Transistors Scan PDF
    2SK330 Toshiba Field Effect Transistor Silicon N Channel Junction Type Original PDF
    2SK330 Unknown Scan PDF
    2SK330 Unknown FET Data Book Scan PDF
    2SK330 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SK330 Toshiba FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE Scan PDF
    2SK330 Toshiba Silicon N channel field effect transistor for audio amplifier, analog switch, constant current and impedance converter applications Scan PDF
    2SK330 Toshiba TO-92 Mini Package Transistors / Junction FETs Scan PDF
    2SK3300 NEC Semiconductor Selection Guide Original PDF
    2SK3300 NEC SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE Original PDF
    ...

    2SK33 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    NS-106

    Abstract: 2SK3354 NS 106
    Text: MOSFET SMD Type MOS Field Effect Transistor 2SK3354 TO-263 +0.1 1.27-0.1 RDS on 2 = 12 m MAX. (VGS = 4 V, ID = 42 A) 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 Low Ciss: Ciss = 6300 pF TYP. 5.60 MAX. (VGS = 10 V, ID = 42 A) Built-in gate protection diode +0.2 4.57-0.2


    Original     		PDF 2SK3354 O-263 NS-106 2SK3354 NS 106

    Untitled

    Abstract: No abstract text available
    Text: 2SK3390 Silicon N-Channel MOS FET UHF Power Amplifier REJ03G0208-0400 Rev.4.00 Nov 08, 2007 Features • High power output, High gain, High efficiency PG = 17 dB, Pout = 6.31 W, ηadd = 60% min. f = 836 MHz • Compact package capable of surface mounting


    Original     		PDF 2SK3390 REJ03G0208-0400 PLSS0003ZA-A

    Untitled

    Abstract: No abstract text available
    Text: 2SK3363-01 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET TO-220AB Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply DC-DC converters


    Original     		PDF 2SK3363-01 O-220AB

    Untitled

    Abstract: No abstract text available
    Text: 2SK3339-01 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings


    Original     		PDF 2SK3339-01

    Untitled

    Abstract: No abstract text available
    Text: 2SK3391 Silicon N-Channel MOS FET UHF Power Amplifier REJ03G0209-0300 Rev.3.00 Nov 08, 2007 Features • High power output, High gain, High efficiency PG = 18 dB, Pout = 1.6 W, ηadd = 58% min. f = 836 MHz • Compact package capable of surface mounting


    Original     		PDF 2SK3391 REJ03G0209-0300 PLZZ0004CA-A

    Untitled

    Abstract: No abstract text available
    Text: MOSFET IC Transistors SMD Type Product specification 2SK3366 TO-252 +0.1 0.80-0.1 Low Ciss: Ciss =730 pF TYP. Built-in gate protection diode 2.3 +0.1 0.60-0.1 3.80 MAX. VGS = 4 V, ID = 10A +0.8 0.50-0.7 +0.15 5.55-0.15 RDS(on)3 = 43m Unit: mm +0.1 2.30-0.1


    Original     		PDF 2SK3366 O-252

    Untitled

    Abstract: No abstract text available
    Text: Transistors MOSFET IC SMD Type Product specification 2SK3355 TO-263 +0.1 1.27-0.1 RDS on 2 = 8.8m MAX. (VGS = 4 V, ID = 42 A) 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 Low Ciss: Ciss = 9800 pF TYP. 5.60 MAX. (VGS = 10 V, ID = 42 A) Built-in gate protection diode


    Original     		PDF 2SK3355 O-263

    k3374

    Abstract: 2SK3374
    Text: 2SK3374 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3374 Switching Regulator Applications • Unit: mm Low drain-source ON resistance: RDS (ON) = 4.0 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 0.8 S (typ.) • Low leakage current: IDSS = 100 µA (max) (VDS = 450 V)


    Original     		PDF 2SK3374 k3374 2SK3374

    2SK3373

    Abstract: No abstract text available
    Text: 2SK3373 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSV 2SK3373 Switching Regulator and DC/DC Converter Applications Motor Drive Applications Unit: mm 1.5 ± 0. 2 6.5 ± 0.2 High forward transfer admittance: |Yfs| = 1.7 S (typ.) • Low leakage current: IDSS = 100 A (max) (VDS = 500 V)


    Original     		PDF 2SK3373 2SK3373

    2SK3398

    Abstract: No abstract text available
    Text: 2SK3398 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3398 Switching Regulator and DC-DC Converter Applications Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 0.4 mΩ (typ.) • High forward transfer admittance: |Yfs| = 9.0 S (typ.)


    Original     		PDF 2SK3398 2SK3398

    2SK3310

    Abstract: No abstract text available
    Text: 2SK3310 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3310 Switching Regulator Applications • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.48 Ω (typ.) • High forward transfer admittance: |Yfs| = 4.3 S (typ.) • Low leakage current: IDSS = 100 A (max) (VDS = 450 V)


    Original     		PDF 2SK3310 2SK3310

    2SK3371

    Abstract: 53-common
    Text: 2SK3371 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSV 2SK3371 Switching Regulator Applications Unit: mm 5.2 ± 0.2 Features 5.5 ± 0.2 Low drain-source ON-resistance: RDS (ON) = 6.4 Ω (typ.) High forward transfer admittance: |Yfs| = 0.85 S (typ.)


    Original     		PDF 2SK3371 2SK3371 53-common

    2SK3310

    Abstract: K3310
    Text: 2SK3310 東芝電界効果トランジスタ シリコンNチャネルMOS形 π-MOSV 2SK3310 単位: mm ○ スイッチングレギュレータ用 • : RDS (ON) = 0.48 Ω (標準) オン抵抗が低い。 • 順方向伝達アドミタンスが高い。 : |Yfs| = 4.3 S (標準)


    Original     		PDF 2SK3310 SC-67 2-10R1B 2SK3310 K3310

    2SK3324

    Abstract: MP-88
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3324 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION The 2SK3324 is N-Channel MOS FET device that features a PART NUMBER PACKAGE 2SK3324 TO-3P Low gate charge and excellent switching characteristics, and


    Original     		PDF 2SK3324 2SK3324 MP-88

    d1413

    Abstract: 2SK3356 NEC J 302 MP-88
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3356 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION The 2SK3356 is N-channel MOS Field Effect Transistor PART NUMBER PACKAGE 2SK3356 TO-3P designed for high current switching applications.


    Original     		PDF 2SK3356 2SK3356 d1413 NEC J 302 MP-88

    2SK3309

    Abstract: No abstract text available
    Text: 2SK3309 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3309 Switching Regulator Applications • · · · Unit: mm Low drain-source ON resistance: RDS (ON) = 0.48 Ω (typ.) High forward transfer admittance: |Yfs| = 4.3 S (typ.) Low leakage current: IDSS = 100 µA (max) (VDS = 450 V)


    Original     		PDF 2SK3309 2SK3309

    D14-131

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3354 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ★ ORDERING INFORMATION DESCRIPTION The 2SK3354 is N-channel MOS Field Effect Transistor PART NUMBER PACKAGE 2SK3354 TO-220AB 2SK3354-S TO-262 2SK3354-ZJ TO-263


    Original     		PDF 2SK3354 2SK3354 O-220AB 2SK3354-S O-262 2SK3354-ZJ O-263 2SK3354-Z O-220SMDNote D14-131

    D144

    Abstract: 2SK3386 2SK3386-Z
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3386 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION The 2SK3386 is N-Channel MOS Field Effect Transistor PART NUMBER PACKAGE 2SK3386 TO-251 2SK3386-Z TO-252 designed for high current switching applications.


    Original     		PDF 2SK3386 2SK3386 O-251 2SK3386-Z O-252 O-251/TO-252 O-251) 120ce D144 2SK3386-Z

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3307 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION The 2SK3307 is N-channel MOS Field Effect Transistor PART NUMBER PACKAGE 2SK3307 TO-3P designed for high current switching applications.


    Original     		PDF 2SK3307 2SK3307

    Untitled

    Abstract: No abstract text available
    Text: 2SK3341-01 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings


    Original     		PDF 2SK3341-01

    230mH

    Abstract: No abstract text available
    Text: 2SK3339-01 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings


    Original     		PDF 2SK3339-01 230mH

    dsi 3550

    Abstract: dr 25 diode
    Text: T E N T A T IV E T O S H I B A 2SK3389 T OS HI BA F I E L D E F F E C T TRANSI STOR S I L I C O N N CHANNEL MOS T Y P E U - M 0 S 1 I 2 S K 3 3 8 9 INDUSTRIAL APPLICATIONS HIGH SPEED,HIGH CURRENT SWITCHING APPLICATIONS. _ UNIT:mm M1


    OCR Scan     		PDF 2SK3389 ID-38A dsi 3550 dr 25 diode

    Untitled

    Abstract: No abstract text available
    Text: 0001492 115296348 I S/ 4 89 / 00- 06 - 29- 14 :05/ P. 0 0 2 2SK3309 [TENTATIVE T O S H I B A TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE /r-MOSV 2SK33O9 HIGH SPEED,HIGH VOLTAGE SWITCHING APPLICATIONS SWITCHING REGULATOR APPLICATIONS INDUSTRIAL APPLICATIONS


    OCR Scan     		PDF 2SK3309 2SK33O9 DS-10V,

    Untitled

    Abstract: No abstract text available
    Text: 2SK3397 TOSHIBA TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE U -M O S H 2SK3397 TENTATIVE RELAY DRIVE AND DC-DC CONVERTER APPLICATIONS UNIT : mm MOTOR DRIVE APPLICATIONS ' 4, h H • Low Drain - Source ON Resistance: R d s (ON) = 4.0 mQ ( Typ.)


    OCR Scan     		PDF 2SK3397