2SK330 Search Results

2SK3309

Contextual Info: 2SK3309 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3309 Switching Regulator Applications • · · · Unit: mm Low drain-source ON resistance: RDS (ON) = 0.48 Ω (typ.) High forward transfer admittance: |Yfs| = 4.3 S (typ.) Low leakage current: IDSS = 100 µA (max) (VDS = 450 V)

Contextual Info: 0001492 115296348 I S/ 4 89 / 00- 06 - 29- 14 :05/ P. 0 0 2 2SK3309 [TENTATIVE T O S H I B A TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE /r-MOSV 2SK33O9 HIGH SPEED,HIGH VOLTAGE SWITCHING APPLICATIONS SWITCHING REGULATOR APPLICATIONS INDUSTRIAL APPLICATIONS

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3307 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION The 2SK3307 is N-channel MOS Field Effect Transistor PART NUMBER PACKAGE 2SK3307 TO-3P designed for high current switching applications.

2SK3305

Abstract: 2SK3305-S 2SK3305-ZJ MP-25
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3305 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION The 2SK3305 is N-Channel DMOS FET device that features a PART NUMBER PACKAGE 2SK3305 TO-220AB 2SK3305-S TO-262 2SK3305-ZJ TO-263

2SK3306

Abstract: MP-45F D14004
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3306 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION The 2SK3306 is N-Channel DMOS FET device that features PART NUMBER PACKAGE 2SK3306 Isolated TO-220 MP-45F a low gate charge and excellent switching characteristics, and

Toshiba 2SJ

Contextual Info: 2SK330 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK330 For Audio Amplifier, Analog Switch, Constant Current and Impedance Converter Applications • High breakdown voltage: VGDS = −50 V • High input impedance: IGSS = −1 nA max (VGS = −30 V)

Contextual Info: 2SK3309 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3309 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.48 Ω (typ.) High forward transfer admittance: |Yfs| = 4.3 S (typ.)

K3302

Abstract: transistor no k3302
Contextual Info: 2SK3302 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3302 Switching Regulator, DC-DC Converter Applications • Low drain-source ON resistance: RDS (ON) = 11.5 Ω (typ.) • High forward transfer admittance: |Yfs| = 0.4 S (typ.)

2SK3307

Abstract: MP-88
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3307 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION The 2SK3307 is N-channel MOS Field Effect Transistor PART NUMBER PACKAGE 2SK3307 TO-3P designed for high current switching applications.

2SK330

Abstract: 2SJ105 Toshiba 2SJ 2SK3303
Contextual Info: 2SK330 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK330 For Audio Amplifier, Analog Switch, Constant Current and Impedance Converter Applications • High breakdown voltage: VGDS = −50 V • High input impedance: IGSS = −1 nA max (VGS = −30 V)

2SK3304

Abstract: MP-88
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3304 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3304 is N-Channel MOS FET device that features a Low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply.

2SK3307

Abstract: MP-88
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3307 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3307 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS on 1 = 9.5 mΩ MAX. (VGS = 10 V, ID = 35 A)

2SK3304

Abstract: D1399 MP-88 DSA002270
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3304 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION The 2SK3304 is N-Channel MOS FET device that features a PART NUMBER PACKAGE 2SK3304 TO-3P Low gate charge and excellent switching characteristics, and

D1412

Abstract: 2SK3307 MP-88
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3307 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION The 2SK3307 is N-channel MOS Field Effect Transistor PART NUMBER PACKAGE 2SK3307 TO-3P designed for high current switching applications.

k3301

Contextual Info: 2SK3301 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIII 2SK3301 Switching Regulatorand DC-DC Converter Applications • Low drain-source ON-resistance: RDS (ON) = 15 Ω (typ.) • High forward transfer admittance: |Yfs| = 0.65 S (typ.)

2SK3305

Contextual Info: PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR 2SK3305 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE PACKAGE DRAWING Unit: mm DESCRIPTION 4.8 MAX. φ 3.6±0.2 FEATURES 4 • Low gate charge: 1.3±0.2 10.0 5.9 MIN. voltage applications such as switching power supply, AC adapter.

2SK3301

Contextual Info: TOSHIBA 2SK3301 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSIII 2SK3301 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm SWITCHING REGULATOR, DC-DC CONVERTER APPLICATIONS • Low Drain-Source ON Resistance

2SK3303

Abstract: 2SJ105 2SK330 Toshiba 2SJ
Contextual Info: 2SK330 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK330 For Audio Amplifier, Analog Switch, Constant Current and Impedance Converter Applications • Unit: mm High breakdown voltage: VGDS = −50 V · High input impedance: IGSS = −1 nA max (VGS = −30 V)

k3301

Contextual Info: 2SK3301 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOSIII 2SK3301 Switching Regulatorand DC-DC Converter Applications • Low drain-source on-resistance: RDS(ON) = 15 Unit: mm (typ.) • High forward transfer admittance: |Yfs| = 0.65 S (typ.)

2SK330

Abstract: 2SJ105 2sk3303
Contextual Info: 2SK330 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK330 For Audio Amplifier, Analog Switch, Constant Current and Impedance Converter Applications • High breakdown voltage: VGDS = −50 V • High input impedance: IGSS = −1 nA max (VGS = −30 V)

transistor no k3302

Contextual Info: 2SK3302 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3302 Switching Regulator and DC-DC Converter Applications • Low drain-source ON resistance: RDS (ON) = 11.5 Ω (typ.) • High forward transfer admittance: |Yfs| = 0.4 S (typ.)

k3301

Abstract: 2SK3301
Contextual Info: 2SK3301 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIII 2SK3301 Switching Regulatorand DC-DC Converter Applications • Low drain-source ON resistance: RDS (ON) = 15 Ω (typ.) • High forward transfer admittance: |Yfs| = 0.65 S (typ.)

2SK3303

Abstract: 2SK330 2SJ105 Toshiba 2SJ
Contextual Info: 2SK330 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK330 For Audio Amplifier, Analog Switch, Constant Current and Impedance Converter Applications • Unit: mm High breakdown voltage: VGDS = −50 V • High input impedance: IGSS = −1 nA max (VGS = −30 V)

Contextual Info: T O S H IB A 2SK3301 TO SHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL M O S TYPE tt-M O SH I 2SK3301 HIGH SPEED, HIGH VOLTAGE SW ITCHING APPLICATIONS INDUSTRIAL APPLICATIONS SW ITCHING REGULATOR, DC-DC CONVERTER APPLICATIONS • Low Drain-Source ON Resistance