2SK358 Search Results

2SK1118

Abstract: 2SK1513 TO-3P 2SK1723 2SK790 p-channel fet to-220
Contextual Info: Power MOS FET tc-MOS Application Type No. N-CHANNEL P-CHANNEL 2SJ200 2SJ201 Audio Power Amp. 2SK1529 2SK1530 2SK357 2SK358 2SK525 2SK526 2SK532 DC/DC Converter 2SK387 Motor Driver 2SK3B8 2SK572 2SK578 2SK573 2SK447 2SK1641 2SK945 2SK528 2SK529 2SK530 2SK531

C-123

Abstract: 2SK3589-01 n-channel, 75v, 50a
Contextual Info: 2SK3589-01 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FUJI POWER MOS FET Super FAP-G Series OUT VIEW Outline Drawings mm 外形寸法図 Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Fig.1 Ｐ矢視図参照

max 1786

Abstract: Mosfet 100V 50A 2SK3587-01MR n-channel, 75v, 50a
Contextual Info: 2SK3587-01MR FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings mm Features TO-220F High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply)

2SK3580-01MR

Contextual Info: 2SK3580-01MR FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings TO-220F Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply

2SK3582TV

Contextual Info: 2SK3582TV TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK3582TV For ECM Unit: mm Application for Ultra-compact ECM 1.2±0.05 Rating VGDO -20 V IG 10 mA Drain power dissipation Ta = 25°C PD 100 mW Tj 125 °C Tstg −55~125 °C Storage temperature range

2SK3582TK

Abstract: 2SK3582
Contextual Info: 2SK3582TK TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK3582TK For ECM Unit: mm Application for Ultra-compact ECM Rating Unit VGDO -20 V Gate Current IG 10 mA Drain power dissipation Ta = 25°C PD 100 mW Tj 125 °C Tstg −55~125 °C

2SK3582TV

Contextual Info: 2SK3582TV TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK3582TV For ECM Unit: mm Application for Ultra-compact ECM Lead Pb -free 1.2±0.05 Rating 0.4 0.3±0.05 3 Unit VGDO -20 V Gate Current IG 10 mA Drain power dissipation (Ta = 25°C)

2SK3582TK

Abstract: ecm circuit
Contextual Info: 2SK3582TK TOSHIBA Field Effect Transistor Silicon N Channel JUNCTION Type 2SK3582TK For ECM 0.22±0.05 Rating Unit VGDS -20 V Gate Current IG 10 mA Drain power dissipation Ta = 25°C PD 100 mW Tj 125 °C Tstg −55~125 °C Junction Temperature Storage temperature range

T16M

Contextual Info: 2SK3589-01 FUJI POWER MOSFET200303 Super FAP-G Series N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications for Switching Foot Print Pattern

2SK3587

Abstract: 2sk3587-01mr
Contextual Info: 2SK3587-01MR 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings mm Features TO-220F High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators

2SK3585

Abstract: 2SK358
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK3585G Silicon N-channel junction FET For impedance conversion in low frequency For electret capacitor microphone • Package  High mutual conductance gm

Contextual Info: 2SK3582MFV TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK3582MFV For ECM Unit: mm Application for Ultra-compact ECM 0.22±0.05 1.2±0.05 0.8±0.05 0.32±0.05 • VGDO -20 V Gate-Drain voltage Gate Current Drain power dissipation Ta = 25°C

2SK3582TK

Abstract: maximum idss transistor 290A transistor transistor marking CG
Contextual Info: 2SK3582TK TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK3582TK For ECM Unit: mm Rating Unit VGDO -20 V Gate Current IG 10 mA Drain power dissipation Ta = 25°C PD 100 mW Junction Temperature Tj 125 °C Tstg −55~125 °C Storage temperature range

Switching N-Channel Power MOS FET 50a

Abstract: 2SK3588-01L 100V 100A mos fet n-channel, 75v, 50a 48v 50a power supply
Contextual Info: 2SK3588-01L,S,SJ FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications P4 Switching regulators UPS Uninterruptible Power Supply

Contextual Info: 2SK3586-01 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings mm Features TO-220AB High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply)

Mosfet 100V 50A

Abstract: 48v 50a power supply n-channel, 75v, 50a 2SK3586-01
Contextual Info: 2SK3586-01 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings mm Features TO-220AB High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply)

2SK3582CT

Abstract: 2SK3582
Contextual Info: 2SK3582CT 東芝ジャンクション FET シリコンNチャネル接合形 2SK3582CT エレクトレットコンデンサマイクロフォン用 ・1.0x0.6×0.38 mmt の CSP パッケージのため小型マイクロフォンに最適 ・減電圧特性に優れる

2SK3582MFV

Abstract: 2SK3582
Contextual Info: 2SK3582MFV TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK3582MFV For ECM Unit: mm Application for Ultra-compact ECM 0.22±0.05 1.2±0.05 0.32±0.05 • 0.8±0.05 VGDO -20 V Gate-Drain voltage Gate Current Drain power dissipation Ta = 25°C

2SK3582TK

Contextual Info: 2SK3582TK TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK3582TK For ECM Unit: mm Application for Ultra-compact ECM Unit VGDO -20 V Gate Current IG 10 mA Drain power dissipation Ta = 25°C PD 100 mW Tj 125 °C Tstg −55~125 °C Junction Temperature

Contextual Info: 2SK3582MFV TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK3582MFV For ECM Unit: mm Application for Ultra-compact ECM 0.22±0.05 1.2±0.05 0.32±0.05 • 0.8±0.05 VGDO -20 V Gate-Drain voltage Gate Current Drain power dissipation Ta = 25°C

2SK3582

Contextual Info: 2SK3582TV TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK3582TV For ECM Unit: mm Application for Ultra-compact ECM 1.2±0.05 0.2±0.05 0.8±0.05 0.3±0.05 • -20 V Gate Current IG 10 mA Drain power dissipation Ta = 25°C PD 100 mW Tj

2SK3582MFV

Contextual Info: 2SK3582MFV TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK3582MFV For ECM Unit: mm Application for Ultra-compact ECM 0.22±0.05 1.2±0.05 0.32±0.05 • 0.8±0.05 VGDO -20 V Gate-Drain voltage Gate Current Drain power dissipation Ta = 25°C

2sk3585

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK3585G Silicon N-channel junction FET For impedance conversion in low frequency For electret capacitor microphone • Features  Package  High mutual conductance gm

Contextual Info: 2SK3582TV TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK3582TV For ECM Unit: mm VGDO -20 V IG 10 mA Drain power dissipation Ta = 25°C PD 100 mW Tj 125 °C Tstg −55~125 °C Storage temperature range 0.4 0.4 2 0.3±0.05 3 Unit Gate Current