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    2SK367 Search Results

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    2SK367 Price and Stock

    Toshiba America Electronic Components 2SK3670,F(J

    MOSFET N-CH TO92MOD
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    Toshiba America Electronic Components 2SK3670,F(M

    MOSFET N-CH TO92MOD
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    Toshiba America Electronic Components 2SK3670(F,M)

    MOSFET N-CH TO92MOD
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    Toshiba America Electronic Components 2SK3670(T6CANO,F,M

    MOSFET N-CH TO92MOD
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    FUJITSU Limited 2SK3679-01MRSC-P

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    Quest Components 2SK3679-01MRSC-P 28
    • 1 $4.629
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    2SK367 Datasheets (28)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SK367 Toshiba N-Channel MOSFET Original PDF
    2SK367 Unknown FET Data Book Scan PDF
    2SK367 Toshiba FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE Scan PDF
    2SK367 Toshiba Silicon N channel field effect transistor for audio amplifier, analog switch, constant current and impedance converter applications Scan PDF
    2SK367 Toshiba TO-92 Mini Package Transistors / Junction FETs Scan PDF
    2SK3670 Toshiba Power MOSFET Selection Guide with Cross Reference Data Original PDF
    2SK3670,F(J Toshiba Semiconductor and Storage Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH Original PDF
    2SK3670,F(M Toshiba Semiconductor and Storage Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH Original PDF
    2SK3670(F,M) Toshiba Semiconductor and Storage Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH Original PDF
    2SK3670(T6CANO,A,F Toshiba Semiconductor and Storage Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH Original PDF
    2SK3670(T6CANO,F,M Toshiba Semiconductor and Storage Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH Original PDF
    2SK3673-01MR Fuji Electric N-CHANNEL SILICON POWER MOSFET Original PDF
    2SK3674-01 Fuji Electric Power MOSFET SuperFAP-G series Target Specification Original PDF
    2SK3674-01L Fuji Electric N-CHANNEL SILICON POWER MOSFET Original PDF
    2SK3674-01S Fuji Electric N-CHANNEL SILICON POWER MOSFET Original PDF
    2SK3674-01SJ Fuji Electric N-CHANNEL SILICON POWER MOSFET Original PDF
    2SK3675-01 Fuji Electric N-CHANNEL SILICON POWER MOSFET Original PDF
    2SK3676-01L Fuji Electric N-CHANNEL SILICON POWER MOSFET Original PDF
    2SK3676-01S Fuji Electric N-CHANNEL SILICON POWER MOSFET Original PDF
    2SK3676-01SJ Fuji Electric N-CHANNEL SILICON POWER MOSFET Original PDF

    2SK367 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    K3670

    Abstract: TRANSISTOR K3670 2SK3670
    Text: 2SK3670 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK3670 Chopper Regulator and DC−DC Converter Applications Unit: mm z 2.5V-Gate Drive z Low drain-source ON-resistance: RDS (ON) = 1.0 Ω (typ.) z High forward transfer admittance: |Yfs| = 2.1 S (typ.)


    Original     		PDF 2SK3670 K3670 TRANSISTOR K3670 2SK3670

    2sk3672

    Abstract: 2SK3673 toshiba audio power amplifier 2SK367
    Text: 2SK367 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK367 For Audio, High Voltage Amplifier and Constant Current Applications • Unit: mm High breakdown voltage: VGDS = −100 V min • High input impedance: IGSS = −1.0 nA (max) (VGS = −80 V)


    Original     		PDF 2SK367 2sk3672 2SK3673 toshiba audio power amplifier 2SK367

    Untitled

    Abstract: No abstract text available
    Text: 2SK3676-01L,S,SJ 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications P4 Switching regulators UPS Uninterruptible Power Supply


    Original     		PDF 2SK3676-01L

    2sk3679

    Abstract: mosfet 2sk3679 2SK3679-01MR 2SK3679 equivalent MOSFET 2sk3679 Data sheet 2SK3679-01 2SK3679-01MR equivalent
    Text: 2SK3679-01MR 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features TO-220F High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators


    Original     		PDF 2SK3679-01MR O-220F mJ300 2sk3679 mosfet 2sk3679 2SK3679-01MR 2SK3679 equivalent MOSFET 2sk3679 Data sheet 2SK3679-01 2SK3679-01MR equivalent

    2SK3673-01MR equivalent

    Abstract: MOSFET 700V 10A 2SK3673
    Text: 2SK3673-01MR 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] TO-220F Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators


    Original     		PDF 2SK3673-01MR O-220F 2SK3673-01MR equivalent MOSFET 700V 10A 2SK3673

    Untitled

    Abstract: No abstract text available
    Text: 2SK367 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK367 For Audio, High Voltage Amplifier and Constant Current Applications • Unit: mm High breakdown voltage: VGDS = −100 V min • High input impedance: IGSS = −1.0 nA (max) (VGS = −80 V)


    Original     		PDF 2SK367

    2SK367

    Abstract: No abstract text available
    Text: 2SK367 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK367 For Audio, High Voltage Amplifier and Constant Current Applications • Unit: mm High breakdown voltage: VGDS = −100 V min • High input impedance: IGSS = −1.0 nA (max) (VGS = −80 V)


    Original     		PDF 2SK367 2SK367

    2SK3670

    Abstract: K3670 VDD-120
    Text: 2SK3670 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSⅤ 2SK3670 ○ リレー駆動DC−DC コンバータ用 単位: mm z 2.5V 駆動です。 z オン抵抗が低い。 : RDS (ON) = 1.0 Ω (標準) z 順方向伝達アドミタンスが高い。


    Original     		PDF 2SK3670 O-92MOD K3670 2002/95/EC) 2SK3670 K3670 VDD-120

    2SK3678-01

    Abstract: n-channel 900v 9a
    Text: 2SK3678-01 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features TO-220AB High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply


    Original     		PDF 2SK3678-01 O-220AB 2SK3678-01 n-channel 900v 9a

    2SK3674-01L

    Abstract: FUJI ELECTRIC fuji electric mark MT5F12615
    Text: Fuji Power MOSFET SuperFAP-G series Target Specification PRELIMINARY 2SK3674-01L,S,SJ 900V/2.0Ω/7A T-PACK 1) Package L ・・・See Page 2/4 S ・・・See Page 3/4 SJ ・・・See Page 4/4 2) Absolute Maximum Ratings (Tc=25℃ unless otherwise specified)


    Original     		PDF 2SK3674-01L 00V/2 25unless MT5F12615 FUJI ELECTRIC fuji electric mark MT5F12615

    2SK3679

    Abstract: mosfet 2sk3679 2SK3679-01MR 2SK3679-01
    Text: Fuji Power MOSFET SuperFAP-G series Target Specification PRELIMINARY 2SK3679-01MR 900V/1.58Ω/9A 1) Package TO-220F 2) Absolute Maximum Ratings (Tc=25℃ unless otherwise specified) Items Drain-Source Voltage Continuous Drain Current Pulsed Drain Current


    Original     		PDF 2SK3679-01MR 00V/1 58/9A) O-220F 25unless Tch150 MT5F12613 2SK3679 mosfet 2sk3679 2SK3679-01MR 2SK3679-01

    2SK3674-01L

    Abstract: DIODE SJ 66
    Text: 2SK3674-01L,S,SJ 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications P4 Switching regulators UPS Uninterruptible Power Supply


    Original     		PDF 2SK3674-01L DIODE SJ 66

    Untitled

    Abstract: No abstract text available
    Text: 2SK3678-01 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features TO-220AB High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply


    Original     		PDF 2SK3678-01 O-220AB

    VGS-30V

    Abstract: 2SK3675-01 2sk3675
    Text: 2SK3675-01 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof 11.6±0.2 Applications Switching regulators UPS Uninterruptible Power Supply


    Original     		PDF 2SK3675-01 VGS-30V 2SK3675-01 2sk3675

    2SK3675-01

    Abstract: No abstract text available
    Text: Fuji Power MOSFET SuperFAP-G series Target Specification PRELIMINARY 2SK3675-01 900V/2.0Ω/7A 1) Package TO-247 2) Absolute Maximum Ratings (Tc=25℃ unless otherwise specified) Items Drain-Source Voltage Continuous Drain Current Pulsed Drain Current


    Original     		PDF 2SK3675-01 00V/2 O-247 25unless Tch150 MT5F12616 2SK3675-01

    2SK3678-01

    Abstract: 1589a
    Text: Fuji Power MOSFET SuperFAP-G series Target Specification PRELIMINARY 2SK3678-01 900V/1.58Ω/9A 1) Package TO-220 2) Absolute Maximum Ratings (Tc=25℃ unless otherwise specified) Items Drain-Source Voltage Continuous Drain Current Pulsed Drain Current


    Original     		PDF 2SK3678-01 00V/1 58/9A) O-220 25unless Tch150 MT5F12612 2SK3678-01 1589a

    2SK3678-01

    Abstract: 2SK3678
    Text: 2SK3678-01 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features TO-220AB High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply


    Original     		PDF 2SK3678-01 O-220AB 2SK3678-01 2SK3678

    2SK3675-01

    Abstract: 900v mosfet 101MH
    Text: 2SK3675-01 200401 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof 11.6±0.2 Applications Switching regulators


    Original     		PDF 2SK3675-01 2SK3675-01 900v mosfet 101MH

    TRANSISTOR K3670

    Abstract: K3670 K3670 transistor 2SK3670 K367
    Text: 2SK3670 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK3670 Chopper Regulator and DC−DC Converter Applications Unit: mm z 2.5V-Gate Drive z Low drain-source ON resistance: RDS (ON) = 1.0 Ω (typ.) z High forward transfer admittance: |Yfs| = 2.1 S (typ.)


    Original     		PDF 2SK3670 TRANSISTOR K3670 K3670 K3670 transistor 2SK3670 K367

    2SK3676-01L

    Abstract: No abstract text available
    Text: Fuji Power MOSFET SuperFAP-G series Target Specification PRELIMINARY 2SK3676-01L,S,SJ 900V/2.5Ω/6A 1) Package T-PACK L ・・・See Page 2/4 S ・・・See Page 3/4 SJ ・・・See Page 4/4 2) Absolute Maximum Ratings (Tc=25℃ unless otherwise specified)


    Original     		PDF 2SK3676-01L 00V/2 25unless MT5F12623

    2SK3673-01MR equivalent

    Abstract: 2SK3673-01MR 2SK3673 MOSFET 700V 10A MOSFET 700V 4A mosfet 350v 10A 700v 10A mosfet
    Text: 2SK3673-01MR 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] TO-220F Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators


    Original     		PDF 2SK3673-01MR O-220F 2SK3673-01MR equivalent 2SK3673-01MR 2SK3673 MOSFET 700V 10A MOSFET 700V 4A mosfet 350v 10A 700v 10A mosfet

    2SK367

    Abstract: vgds 100v
    Text: TOSHIBA 2SK367 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK367 FOR AUDIO, HIGH VOLTAGE AM PLIFIER AND CONSTANT CURRENT Unit in mm APPLICATIONS 4.2M AX • — High Breakdown Voltage : VGDS“ —100V Min. • High Input Impedance : I(jgg= —l.OnA (Max.) (V Q g = —80V)


    OCR Scan     		PDF 2SK367 -100V 55MAX 2SK367 vgds 100v

    2SK367

    Abstract: No abstract text available
    Text: T O S H IB A 2SK367 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK367 FOR AUDIO, HIGH VOLTAGE AMPLIFIER AND CONSTANT CURRENT Unit in mm APPLICATIONS • • 4.2MAX. —H — 1 1 1 I 1 High Breakdown Voltage : VQDg= —100V Min. High Input Impedance : lQ gg= —l.OnA (Max.) (V Q g= —80V)


    OCR Scan     		PDF 2SK367 -100V 55MAX 2SK367

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A 2SK367 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK367 Unit in mm FOR AUDIO, HIGH VOLTAGE AM PLIFIER AND CONSTANT CURRENT APPLICATIONS • • • High Breakdown Voltage : Vg d S = —100V Min. High Input Impedance : lGSS~ —l-0nA(Max.) (VQg= —80V)


    OCR Scan     		PDF 2SK367 55MAX.