2SKI266 Search Results
2SKI266 Datasheets Context Search
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Contextual Info: Power F-MOS FET 2SK1266 2SK1266 Silicon N-channel Power F-MOS FET • Package Dimensions ■ Features • • • • Low ON resistance Rds on : RDs (on) l = 0.08il (typ.) High switching rate : tf= 180ns (typ.) No secondary breakdown For low voltage driving (VGs = 4V) |
OCR Scan |
2SK1266 180ns 2SKi266 |