2W,GAAS FET Search Results

2w, GaAs FET

Abstract: MGFK33V4045
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFK33V4045 14.0 ~ 14.5GHz BAND 2W INTERNALLY MATCHED GaAs FET MITSUBISHI ELECTRIC

TC3967

Abstract: 2w, GaAs FET thermal conductivity ceramic FET
Contextual Info: TC3967 REV.1_04/27/2005 2W Packaged Self-Bias PHEMT GaAs Power FETs FEATURES • 2W Typical Output Power • 12.5dB Typical Linear Power Gain at 2.45GHz • High Linearity: IP3 = 43 dBm Typical • High Power Added Efficiency: Nominal PAE of 35% • Breakdown Voltage: BVDGO ≥ 15V

Contextual Info: < X/Ku band internally matched power GaAs FET > MGFK33V4045 14.0 – 14.5 GHz BAND / 2W DESCRIPTION The MGFK33V4045 is an internally impedance-matched GaAs power FET especially designed for use in 14.0 – 14.5 GHz band amplifiers. The hermetically sealed metal-ceramic

Contextual Info: < X/Ku band internally matched power GaAs FET > MGFK33V4045 14.0 – 14.5 GHz BAND / 2W DESCRIPTION The MGFK33V4045 is an internally impedance-matched GaAs power FET especially designed for use in 14.0 – 14.5 GHz band amplifiers. The hermetically sealed metal-ceramic

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> ! MGFK33V4045 ! i 1 4 .0 — 14.5G H z BAND 2W INTERNALLY MATCHED GaAs FET DESCRIPTION The M G F K 3 3 V 4 0 4 5 is an internally impedance matched GaAs power FET especially designed fo r use in 14.0 ~ 14.5 GHz-band am plifiers. The herm etically sealed metal-ceramic

Contextual Info: < High-power GaAs FET small signal gain stage > MGF0921A L & S BAND / 2W SMD non - matched DESCRIPTION The MGF0921A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=33dBm(TYP.) @f=1.9GHz,Pin=17dBm

Contextual Info: < High-power GaAs FET small signal gain stage > MGF0921A L & S BAND / 2W SMD non - matched DESCRIPTION The MGF0921A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=33dBm(TYP.) @f=1.9GHz,Pin=17dBm

Nec K 872

Abstract: 102528 NEC 2905 139492 NEZ1414-2E T-78 NEZ1011-2E 72248 121-138 26433
Contextual Info: DATA SHEET N-CHANNEL GaAs MESFET NEZ1011-2E, NEZ1414-2E 2W X, Ku-BAND POWER GaAs MESFET DESCRIPTION The NEZ1011-2E and NEZ1414-2E are power GaAs MESFETs which provide high gain, high efficiency and high output in X, Ku-band. The internal input and output matching enables guaranteed performance to be achieved with

NEC 2933

Abstract: 2912 nec NEC 2705 72248 NEC 2705 L 107
Contextual Info: DATA SHEET_ N-CHANNEL GaAs MESFET NEZ1011-2E, NEZ1414-2E 2W X, Ku-BAND POWER GaAs MESFET DESCRIPTION The NEZ1011-2E and NEZ1414-2E are power GaAs MESFETs which provide high gain, high efficiency and high . output in X, Ku-band. The internal input and output matching enables guaranteed performance to be achieved with

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G F K 33V 4045 1 4 . 0 - 14.5GH z BAND 2W IN TERN ALLY MATCHED GaAs F E T DESCRIPTION The M G F K 3 3 V 4 0 4 5 is an internally impedance matched GaAs power F E T especially designed fo r use in 14.0 ~ 14.5 GHz-band amplifiers. The herm etically sealed metal-ceramic

MGFK33V4045

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G F K 3 3 V 40 45 1 4 .0 — 14.5GHz BAND 2W INTERNALLY M ATCH ED GaAs F E T D E S C R IP T IO N The M G F K 3 3 V 4 0 4 5 is an internally impedance matched GaAs power F E T especially designed fo r use in 1 4 .0 ~ 14.5

Contextual Info: MITSUBISHI SEMICONDUCTOR CGaAs FET> M GFK33V4045 1 4 .0 — 14.5GHz BAND 2W INTERNALLY M ATCHED GaAs F E T DESCRIPTION The M G F K 3 3 V 4 0 4 5 is an in te rn a lly impedance matched GaAs power FET especially designed fo r use in 14.0 ~ 14.5 GHz-band am plifiers. The herm etically sealed metal-ceramic

AE-POWER

Abstract: TC3967
Contextual Info: TC3967 REV2_20080516 2 W Packaged Single-Bias PHEMT GaAs Power FETs FEATURES • 2W Typical Output Power • 13dB Typical Linear Power Gain at 2.45GHz • • • High Linearity: IP3 = 43 dBm Typical High Power Added Efficiency: Nominal PAE of 35% Breakdown Voltage: BVDGO ≥ 15V

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaA$ FET> MGFK33V4045 1 4 ,0 — 14.SGHz BAND 2W INTERNALLY M ATCHED GaAs F E T DESCRIPTION OUTLINE DRAWING The M G F K 3 3 V 4 0 4 5 is an in te rn a lly impedance matched U n i t : m i l l i m e t e r s inches GaAs power FET especially designed fo r use in 14.0 ^ 14.5

2w,GaAs FET

Abstract: 6401FN
Contextual Info: MA06401FN 2W GaAs Power Amplifier 4.5 - 6.9 GHz Advanced Information FEATURES •= •= •= •= •= •= •= •= Broadband Performance High Linear Power (P1dB): 33 dBm typical High Power Added Efficiency: 40% typical at P1dB High Linear Gain: 18 dB typical

P0110009P

Abstract: Susumu RL series part Marking KP029J P0120009P RR0816 marking c7 sot-89
Contextual Info: P0120009P Technical Note 2W GaAs Power FET Pb-Free Type ♦Features ♦Functional Diagram • Up to 2.7 GHz frequency band · Beyond +31 dBm output power · Up to +48dBm Output IP3 · High Drain Efficiency · 11dB Gain at 2.1GHz · SOT-89 SMT Package · Low Noise Figure

Contextual Info: 2W GaAs Power Amplifier 4.5 - 7.1 GHz ITT6401FM / [ FEATURES r> \ j Broadband Performance High Linear Power (P1dB): 33 dBm typical High Power Added Efficiency: 40% typical at P1dB High Linear Gain: 18 dB typical 50 £2 Input/Output Impedance Self-Aligned MSAG MESFET Process

ITT6401FM

Contextual Info: 2W GaAs Power Amplifier 4.5 - 7.1 GHz ITT6401FM FEATURES • • • • • • • • • • Broadband Performance High Linear Power (P1dB): 33 dBm typical High Power Added Efficiency: 40% typical at P1dB High Linear Gain: 18 dB typical 50 Ω Input/Output Impedance

MwT-22

Abstract: 2w, GaAs FET
Contextual Info: MwT-22 2W High Linearity GaAs FET Preliminary Data Sheet June 2006 Features: • • • • • • • +33 dBm typical Output Power at 6 GHz 12 dB typical Small Signal Gain at 6 GHz 40% typical PAE at 6 GHz 0.5 x 4800 Micron Refractory Metal/Gold Gate Sorted into 100 mA Idss Bin Ranges

2w,GaAs FET

Abstract: ITT6401D
Contextual Info: 8V 2W GaAs Power Amplifier Die 4.5 - 7.1 GHz ITT6401D FEATURES • • • • • • • • Broadband Performance High Linear Power (P1dB): 33 dBm typical High Power Added Efficiency: 40% typical at P1dB High Linear Gain: 18 dB typical Efficient performance with 3 to 10 Volt power supply

GaAsTEK

Contextual Info: 8V 2W GaAs Power Amplifier Die 4.5 - 7.1 GHz ITT6401D FEATURES • • • • • • • • Broadband Performance High Linear Power (P1dB): 33 dBm typical High Power Added Efficiency: 40% typical at P1dB High Linear Gain: 18 dB typical Efficient performance with 3 to 10 Volt power supply

gaas fet marking a

Abstract: siemens gaas fet FET marking code Q62702-L90 cly5 cly 10 pd21
Contextual Info: CLY 5 GaAs FET Datasheet * Power amplifier for mobile phones * For frequencies from 400 MHz to 2.5 GHz * Wide operating voltage range: 2.7 to 6 V * POUT at VD=3V, f=1.8GHz typ. 26.5 dBm

Q62702-L90

Abstract: marking K gaas fet gaas fet marking a gaas fet marking C
Contextual Info: CLY 5 GaAs FET Datasheet * Power amplifier for mobile phones * For frequencies from 400 MHz to 2.5 GHz * Wide operating voltage range: 2.7 to 6 V * POUT at VD=3V, f=1.8GHz typ. 26.5 dBm * High efficiency better 55 % ESD: Electrostatic discharge sensitive device,

siemens gaas fet

Abstract: gaas fet marking J
Contextual Info: SIEMENS CLY 5 GaAs FET D a t a s h e e t * Pow er amplifier for mobile phones * For frequencies from 400 M H z to 2.5 G H z * W ide operating voltage range: 2.7 to 6 V * at V 0=3V, f=1.8GHz typ. 26.5 dBm * High efficiency better 55 % X 2 1 ESD: V P S0S163