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    2X TRANSISTOR Search Results

    2X TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    2X TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    optical interrupter

    Abstract: QVE00118
    Text: PHOTOTRANSITOR OPTICAL INTERRUPTER SWITCH QVE00118 PACKAGE DIMENSIONS 0.551 14.00 CL 0.236 (6.00) 0.020 (.50) CL 0.197 (5.00) CL OPTICAL 0.100 (2.50) 0.394 (10.00) (2X) 0.295 (7.50) 0.197 (5.00) MIN (4X) 0.027 (.70) (2X) 0.354 (9.00) (2X) NOM 0.260 (6.60)


    Original     		PDF QVE00118 optical interrupter QVE00118

    MAX1910

    Abstract: MAX1910EUB MAX1912 MAX1912EUB MAX5380 MAX5383 high-efficiency LED 250 uA
    Text: 19-2290; Rev 1; 7/02 1.5x/2x High-Efficiency White LED Charge Pumps The MAX1910 has two automatically selected operating modes: 1.5x and 2x. 1.5x mode improves efficiency at higher input voltages, while 2x mode maintains regulation at lower input voltages. The MAX1912 operates


    Original     		PDF MAX1910 MAX1912 10-pin 750kHz 200mV 120mA MAX1910/MAX1912 MAX1910EUB MAX1912EUB MAX5380 MAX5383 high-efficiency LED 250 uA

    LMBT4401WT1G

    Abstract: 1N916 LMBT4401LT1 LMBT4401LT1G
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistor • We declare that the material of product compliance with RoHS requirements. LMBT4401WT1G ORDERING INFORMATION Device Marking Shipping 3 LMBT4401WT1G 2X 3000/Tape & Reel LMBT4401WT3G 2X 10000/Tape & Reel


    Original     		PDF LMBT4401WT1G 3000/Tape LMBT4401WT3G 10000/Tape SC-70 LMBT4401WT1G 1N916 LMBT4401LT1 LMBT4401LT1G

    STA5405

    Abstract: sta540 equivalent amplifier for STA540 sta5402 8ohm .5W speaker STA-540 AN1965 diagnostic Thermal Cutoffs JESD97
    Text: STA540 4 x 13 W dual/quad power amplifier Features ! High output power capability – 2x 38 W into 4 Ω at 18 V, 1 kHz, 10%THD – 2x 34 W into 8 Ω at 22 V, 1 kHz, 10%THD – 2x 24 W into 4 Ω at 14.4 V, 1 kHz, 10%THD – 2x 15 W into 8 Ω at 16 V, 1 kHz, 10%THD


    Original     		PDF STA540 STA5405 sta540 equivalent amplifier for STA540 sta5402 8ohm .5W speaker STA-540 AN1965 diagnostic Thermal Cutoffs JESD97

    LMBT4401LT1G

    Abstract: 1N916 LMBT4401LT1
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistor • We declare that the material of product compliance with RoHS requirements. LMBT4401LT1G ORDERING INFORMATION Device Marking Shipping 3 LMBT4401LT1G 2X 3000/Tape & Reel LMBT4401LT3G 2X 10000/Tape & Reel


    Original     		PDF LMBT4401LT1G 3000/Tape LMBT4401LT3G 10000/Tape OT-23 LMBT4401LT1G 1N916 LMBT4401LT1

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistor • We declare that the material of product compliance with RoHS requirements. LMBT4401WT1G ORDERING INFORMATION Device Marking Shipping 3 LMBT4401WT1G 2X 3000/Tape & Reel LMBT4401WT3G 2X 10000/Tape & Reel


    Original     		PDF LMBT4401WT1G 3000/Tape LMBT4401WT3G 10000/Tape SC-70

    Untitled

    Abstract: No abstract text available
    Text: STA540 4 x 13 W dual/quad power amplifier Datasheet − production data Features • High output power capability – 2x 38 W into 4 Ω at 18 V, 1 kHz, 10% THD – 2x 34 W into 8 Ω at 22 V, 1 kHz, 10% THD – 2x 24W into 4Ω at 14.4 V, 1 kHz, 10% THD – 2x 15 W into 8 Ω at 16 V, 1 kHz, 10% THD


    Original     		PDF STA540

    Transistor Equivalent list po55

    Abstract: 1F15H transistor P6n motorola top mark smd 7h MAXQ2000 MAXQ622
    Text: Rev 1; 7/10 MAXQ612/MAXQ622 USER’S GUIDE MAXQ612/MAXQ622 REGULATOR VOLTAGE MONITOR GPIO USB SIE* TXCVR 16-BIT MAXQ RISC CPU 6KB ROM SECURE MMU CLOCK 128KB FLASH WATCHDOG 6KB SRAM 2x 16-BIT TIMER 8kHz NANO RING IR DRIVER IR TIMER 2x SPI 2x USART I2C *MAXQ622 ONLY.


    Original     		PDF MAXQ612/MAXQ622 MAXQ612/MAXQ622 16-BIT 128KB MAXQ622 Transistor Equivalent list po55 1F15H transistor P6n motorola top mark smd 7h MAXQ2000

    LP6872

    Abstract: MIL-HDBK-263
    Text: LP6872 0.5W POWER PHEMT • DRAIN BOND PAD 2X FEATURES ♦ 27 dBm Output Power at 1-dB Compression at 18 GHz ♦ 9.5 dB Power Gain at 18 GHz ♦ 55% Power-Added Efficiency SOURCE BOND PAD (2x) GATE BOND PAD (2X) • DIE SIZE: 14.6X19.7 mils (370x500 µm)


    Original     		PDF LP6872 370x500 50x60 LP6872 MIL-HDBK-263

    STA540

    Abstract: sound amplifier sta5402 inr 470 STA-540 quadraphonic
    Text: STA540 4 x 13 W dual/quad power amplifier Datasheet − production data Features • High output power capability – 2x 38 W into 4 Ω at 18 V, 1 kHz, 10% THD – 2x 34 W into 8 Ω at 22 V, 1 kHz, 10% THD – 2x 24W into 4Ω at 14.4 V, 1 kHz, 10% THD – 2x 15 W into 8 Ω at 16 V, 1 kHz, 10% THD


    Original     		PDF STA540 STA540 sound amplifier sta5402 inr 470 STA-540 quadraphonic

    STA540

    Abstract: sta5402
    Text: STA540 4 x 13 W dual/quad power amplifier Datasheet − production data Features • High output power capability – 2x 38 W into 4 Ω at 18 V, 1 kHz, 10% THD – 2x 34 W into 8 Ω at 22 V, 1 kHz, 10% THD – 2x 24W into 4Ω at 14.4 V, 1 kHz, 10% THD – 2x 15 W into 8 Ω at 16 V, 1 kHz, 10% THD


    Original     		PDF STA540 STA540 sta5402

    pseudomorphic

    Abstract: 0X13 LP7512 MIL-HDBK-263
    Text: LP7512 ULTRA LOW NOISE PHEMT • DRAIN BOND PAD 2X FEATURES ♦ 0.6 dB Noise Figure at 12 GHz ♦ 12 dB Associated Gain at 12 GHz ♦ Low DC Power Consumption ♦ Excellent Phase Noise GATE BOND PAD (2X) SOURCE BOND PAD (2x) DIE SIZE: 18.0X13.0 mils (460x330 µm)


    Original     		PDF LP7512 460x330 50x50 LP7512 pseudomorphic 0X13 MIL-HDBK-263

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistor • Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish LMBT4401LT1G ORDERING INFORMATION Device Marking Shipping 3 LMBT4401LT1G 2X 3000/Tape & Reel LMBT4401LT3G 2X 10000/Tape & Reel


    Original     		PDF LMBT4401LT1G 3000/Tape LMBT4401LT3G 10000/Tape

    LPS200

    Abstract: MIL-HDBK-263 LPS-200
    Text: LPS200 HIGH PERFORMANCE LOW NOISE PHEMT • FEATURES ♦ 1.0 dB Noise Figure at 18 GHz ♦ 10 dB Associated Gain at 18 GHz ♦ Low DC Power Consumption GATE BOND PAD 2X DRAIN BOND PAD (2X) SOURCE BOND PAD (2x) DIE SIZE: 12.6X10.2mils (320x260 µm) DIE THICKNESS: 3.9 mils (100 µm)


    Original     		PDF LPS200 320x260 85x65 LPS200 MIL-HDBK-263 LPS-200

    bond wire gold

    Abstract: LPD200 MIL-HDBK-263
    Text: LPD200 HIGH PERFORMANCE PHEMT • FEATURES ♦ 21 dBm Output Power at 1-dB Compression at 18 GHz ♦ 12 dB Power Gain at 18 GHz ♦ 1.0 dB Noise Figure at 18 GHz ♦ 55% Power-Added Efficiency DRAIN BOND PAD 2X GATE BOND PAD (2X) SOURCE BOND PAD (2x) DIE SIZE: 12.6X10.2mils (320x260 µm)


    Original     		PDF LPD200 320x260 85x65 LPD200 bond wire gold MIL-HDBK-263

    FPD2250

    Abstract: MIL-HDBK-263 P100
    Text: FPD2250 1.5W POWER PHEMT • DRAIN BOND PAD 2X FEATURES ♦ 32 dBm Linear Output Power at 12 GHz ♦ 7.5 dB Power Gain at 12 GHz ♦ 42 dBm Output IP3 ♦ 45% Power-Added Efficiency SOURCE BOND PAD (2x) GATE BOND PAD (2X) • DIE SIZE (µm): 680 x 470 DIE THICKNESS: 75 µm


    Original     		PDF FPD2250 FPD2250 MIL-HDBK-263 P100

    opto transistor moc

    Abstract: 356 opto MOC70P3
    Text: Transmissive Opto Sensors Slotted Switch MOC Analog – Standard Resolution 0.510 [12.95] 0.250 [6.35] 0.506 [12.85] 0.153 [3.89] 2X 0.200 [5.08] NOM R0.070 (1.78) (2X) 0.080 [2.03] NOM CL 0.270 [6.86] 0.050 [1.27] SEATING PLANE 0.140 [3.56] 0.105 [2.67]


    Original     		PDF MOC70P1 MOC70P2 MOC70P3 opto transistor moc 356 opto MOC70P3

    slotted optical switch

    Abstract: optical interrupter phototransistor 3 pin QVE00034
    Text: PHOTOTRANSISTOR OPTICAL INTERRUPTER SWITCH QVE00034 PACKAGE DIMENSIONS 0.697 17.70 0.236 (6.00) + D E + CL CL 0.020 (0.50) 0.315 (8.00) 0.039 X 45° CHAMFER (2X) CL OPTICAL C.L. 0.059 (1.50) (2X) 0.295 (7.50) 0.394 (10.00) 0.079 (2.00) 0.138 (3.51) 0.030 (0.76)


    Original     		PDF QVE00034 slotted optical switch optical interrupter phototransistor 3 pin QVE00034

    OPTICAL INTERRUPTER

    Abstract: QVE00034 INTERRUPTER SWITCH slotted optical switch .300" slot optical interrupter
    Text: PHOTOTRANSISTOR OPTICAL INTERRUPTER SWITCH QVE00034 PACKAGE DIMENSIONS 0.697 17.70 0.236 (6.00) + D E + CL CL 0.020 (0.50) 0.315 (8.00) 0.039 X 45° CHAMFER (2X) CL OPTICAL C.L. 0.059 (1.50) (2X) 0.295 (7.50) 0.394 (10.00) 0.079 (2.00) 0.138 (3.51) 0.030 (0.76)


    Original     		PDF QVE00034 OPTICAL INTERRUPTER QVE00034 INTERRUPTER SWITCH slotted optical switch .300" slot optical interrupter

    MO-178-AA

    Abstract: 2X transistor transistor 2x Flash 04501 MO-178AA 015-C
    Text: Plastic Packages for Integrated Circuits Package Outline Drawing P5.064A 5 LEAD SMALL OUTLINE TRANSISTOR PLASTIC PACKAGE Rev 0, 2/10 1.90 0-3° D A 0.08-0.20 5 4 PIN 1 INDEX AREA 2.80 3 1.60 3 0.15 C D 2x 2 5 0.60 0.20 C 2x 0.95 SEE DETAIL X B 0.40 ±0.05


    Original     		PDF 5M-1994. MO-178AA. MO-178-AA 2X transistor transistor 2x Flash 04501 MO-178AA 015-C

    transistor 2x

    Abstract: 55JT 010US d 686
    Text: 2X 0 STYLE 1: PIN 1 = COLLECTOR 2X 2 = BASE (4X ) 3 = EMITTER (2X ) STYLE 2: PIN 1 = COLLECTOR (2X ) 2 = EMITTER (4X ) 3 = BASE (2X ) DIM MILLIMETER A 9.1 4 B 12.70 s 2X K TOL .13 .13 INCHES .360 .500 .03 .05 TOL .005 .005 +.001 -.002 .005 .005 .005 .005


    OCR Scan     		PDF

    CM45-12A

    Abstract: 8M0B5 MHW252 CM80-28R BGY41B BFR65 2N6166 blw95 BLY94 MHW1342
    Text: RF Transistors for Broadcast Applications SGS-Thomson 55-108MHz Class C for FM Transmitters and Ctass AB for VHF-TV Band I Config. Package Type CE 2X.450SQ4LFL SD1476" CE 2X.450SQ4LFL SD1476 CE .5004LFL SD1457 CE .5004LFL SD1460 2X.450SQ4LFL CE SD1483 * In development, Class AB Icq = 2 X 400 mA


    OCR Scan     		PDF 55-108MHz SD1476" 450SQ4LFL SD1476 SD1457 5004LFL SD1460 SD1483 CM45-12A 8M0B5 MHW252 CM80-28R BGY41B BFR65 2N6166 blw95 BLY94 MHW1342

    SN54H60

    Abstract: SN54H50 SN54H53
    Text: CIRCUIT TYPE SN54H60 DUAL 4-INPUT EXPANDER FOR USE WITH SN54H50, SN54H53, SN54H55 CIRCUITS s c h e m a t ic (e a c h e x p a n d e r ) fl At (t o p package v ie w ) d u a l -in -l i n e p a c k a g e /c c 2X 2X 2D GND 2C 28 ÌD IX IX (t o p 2X v ie w 2X


    OCR Scan     		PDF SN54H60 SN54H50, SN54H53, SN54H55 SN54H50 SN54H53

    TBA950

    Abstract: TBA950-2X TBA 950 2x 2X transistor TBA9502X Phase Control Circuit RC oscillator in inverter circuit diagram filter stage flyback 50hz oscillator inverter Circuit diagram 15625-Hz
    Text: TBA950:2X APLESSEY W Sem iconductors, FOR MAINTENANCE PURPOSES ONLY: DO NOT USE FOR NEW DESIGNS TBA950: 2X LINE OSCILLATOR COMBINATION The T B A 9 5 0 :2 X is a monolithic integrated circuit for pulse separation and line synchronisation in TV receivers with transistor output stages.


    OCR Scan     		PDF TBA950 TBA950: TBA950-2X TBA 950 2x 2X transistor TBA9502X Phase Control Circuit RC oscillator in inverter circuit diagram filter stage flyback 50hz oscillator inverter Circuit diagram 15625-Hz