2X512 Search Results

AM29LV004T

Abstract: EDI7F33512V
Contextual Info: EDI7F33512V 512Kx32 FLASH DESCRIPTION FIG. 1 The EDI7F33512, EDI7F233512 and EDI7F433512 are organized as 512Kx32 and 2x512Kx32 and 4x512Kx32 respectively. The modules are based on AMD's AM29LV004T - 512Kx8 Flash Device in TSOP packages which are mounted on an FR4 substrate.

Contextual Info: White Electronic Designs WS1M8-XXX 2x512Kx8 DUALITHIC SRAM FEATURES Access Times 17, 20, 25, 35, 45, 55ns Organized as two banks of 512Kx8 Revolutionary, Center Power/Ground Pinout Commercial, Industrial and Military Temperature Ranges Packaging: 5 Volt Power Supply

Contextual Info: EDI7F33512V 512Kx32 FLASH DESCRIPTION FIG. 1 The EDI7F33512, EDI7F233512 and EDI7F433512 are organized as 512Kx32 and 2x512Kx32 and 4x512Kx32 respectively. The modules are based on AMD's AM29LV004T - 512Kx8 Flash Device in TSOP packages which are mounted on an FR4 substrate.

Contextual Info: MI TSUBI SHI M E M O R Y C A R D D YN A MI C RAM CARDS MF12M1-L57ATXX 1x512/fx32i&/i D R A M Card MF14M1-L57ATXX 2x512/^x326/7 D R A M Card Connector Type T w o - p ie c e 8 8 -p i n y I Extend DESCRIPTION These DRAM CARDs JEIDA DRAM are developed ba s e d

Contextual Info: EDI7F33512C White Electronic Designs 512Kx32 FLASH FIG.1 BLOCK DIAGRAMS The EDI7F33512, EDI7F233512 and EDI7F433512 are organized as 512Kx32 and 2x512Kx32 and 4x512Kx32 respectively. The modules are based on AMD's AM29F040 - 512Kx8 Flash Device in TSOP packages which are

AM29LV004T

Abstract: EDI7F33512V eco 9230
Contextual Info: EDI7F33512V SEDI, 512Kx32 Flash ELECTRONIC DESIGNS, IN C I 512Kx32 Flash Block Diagrams The EDI7F33512, EDI7F233512 and EDI7F433512 are organized as 512Kx32 and 2x512Kx32 and 4x512Kx32 respectively. The modules are based on AMD's AM29LV004T - 512Kx8 Flash Device in

WA126

Abstract: GA-311
Contextual Info: ^ E D EDI9F81025C I e le c tro n s : designs, n c .1 2x512Kx8 SRAM Module 2x512Kx8 Static RAM CMOS, Module Features The EDI9F81025C is an 8 megabit CMOS Static RAM based on 2x512Kx8 bit CMOS Static two 512Kx8 Static RAMs mounted on a multi-layered epoxy Random Access Memory

AM290F040

Contextual Info: White Electronic Designs EDI7F33512C 512Kx32 FLASH FEATURES 512Kx32, 2x512Kx32 and 4x512Kx32 Densities Based on AMDs - AM290F040 Flash Device Fast Read Access Time - 80-150ns 5V Only Reprogramming Sector Erase Architecture Uniform sectors of 64 Kbytes each

S1M A3

Contextual Info: WS1M8-XXX Hi-REUASIUTY PRODUCT 2x512Kx8 DUALITHIC SRAM FEATURES O rg a n iz e d as t w o b a n k s o f 5 1 2 K x 8 • A c c e s s T i m e s 17, 2 0, 2 5, 3 5, 4 5, 5 5 n s C o m m e r c ia l, I n d u s tr ia l a n d M i l i t a r y T e m p e r a t u r e R a nges

mz70

Contextual Info: EDI9F81025C ^ E D I ELECTRONC œ SIG N a N C I 2x512Kx8 SRAM Module 2x512Kx8 Static RAM CMOS, Module Features The EDI9F81025C is an 8 megabit CMOS Static RAM based on 2x512Kx8 bit CMOS Static two 512Kx8 Static RAMs mounted on a multi-layered epoxy Random Access Memory

Contextual Info: White Electronic Designs WS1M8V-XCX ADVANCED* 2x512Kx8 DUALITHIC SRAM FEATURES • Access Times 17, 20, 25, 35, 45, 55ns ■ Evolutionary, Corner Power/Ground Pinout ■ PIN CONFIGURATION FOR WS1M8V-XCX 32 DIP TOP VIEW Packaging: • 32 pin, Hermetic Ceramic DIP Package 300

Contextual Info: WS1M8V-XCX 2x512Kx8 DUALITHIC SRAM ADVANCED* FEATURES PIN CONFIGURATION FOR WS1M8V-XCX • Access Times 17, 20, 25, 35, 45, 55ns ■ Evolutionary, Corner Power/Ground Pinout 32 DIP TOP VIEW 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 25

Contextual Info: White Electronic Designs WS1M8-XCX PRELIMINARY* 2x512Kx8 DUALITHIC SRAM FEATURES Access Times 70, 85, 100ns Evolutionary, Corner Power/Ground Pinout Packaging: • 32 pin, Hermetic Ceramic DIP Package 300 Organized as two banks of 512Kx8 Commercial, Industrial and Military Temperature

512k x 8 chip block diagram

Abstract: AMD 705 AM29LV004T EDI7F33512V
Contextual Info: White Electronic Designs EDI7F33512V 512Kx32 FLASH FEATURES 512Kx32, 2x512Kx32 and 4x512Kx32 Densities Based on AMDs - AM29LV004T Flash Device Fast Read Access Time - 80ns 3V Only Reprogramming Flexible, Sector Architecture One 16Kbyte, two 8Kbyte, one 32Kbyte and

Contextual Info: WDÍ EDI9F81025C ELECTRONIC DESIGNS INC. • Surface Mount Eight Megabit SRAM Module 2x512Kx8 Static RAM CMOS Module , Features The EDI9F81025C is an 8 megabit CMOS Static RAM based on two 512Kx8 Static RAMs mounted on a multi­ layered epoxy laminate FR4 substrate.

Contextual Info: WS1M8-XXX M/HITE /MICROELECTRONICS 2x512Kx8 DUALITHIC SRAM ADVANCED* FEATURES • A c c e s s T i m e s 17, 20, 25, 35, 45, 5 5 n s ■ R e v o lu tio n a r y , C e n t e r P o w e r / G r o u n d P in o u t ■ P a c k a g in g : ■ C o m m e r c i a l , In d u s tr ia l and M i l i t a r y T e m p e r a t u r e R a ng e s

Contextual Info: WHITE M IC R O E L E C T R O N IC S 2x512Kx32 5V FLASH SIM M WPF1M32A-90PSC5 PRELIMINARY* FEATURES • A ccess Tim e o f 90ns ■ ■ Packaging: ■ Organized as tw o banks o f 512Kx32 • 80-pin S IM M ■ C om m ercial T e m pe ratu re Range • The m odule is m a nufa cture d w ith e ig h t 512Kx8 CMOS

Contextual Info: 77 WS1M8V-XCX M/HITE /MICROELECTRONICS 2x512Kx8 DUALITHIC SRAM PRELIMINARY* FEATURES PIN CONFIGURATION FOR WS1M8V-XCX • 32 DIP TOP VIEW A 18E 1 ^ 31 □ A15 A12C 4 A 7C 5 29 □ WE E E A4 E A3 E A2 E A1 E AO E 28 □ A13 A6 6 27 □ A8 7 26 □ A9 GND

332 Ic 8 pin

Abstract: 4X512K ic 331
Contextual Info: ^EDI E D I7F33S 12C 512Kx32 Flash EL£CTRONC CESGN& M C I Features 512Kx32 Flash Module 2,4,8 megabyte CMOS Flash Module Family Organization: 512Kx32 2x512Kx32 4x512Kx32 Fast Read Access Time-80ns Five Volt Only Reprogramming Internal Program Control and Timer

EDI9F81025C100BPC

Abstract: EDI9F81025C70BPC EDI9F81025C85BPC EDI9F81025LP70BPC
Contextual Info: WDI EDI9F81025C ELECTRONIC DESIGNS INC. . High Speed Eight Megabit SRAM Module 2x512Kx8 Static RAM CMOS, Module Features The EDI9F81025C is an 8 megabit CMOS Static RAM based on two 512Kx8 Static RAMs mounted on a multi-layered epoxy laminate FR4 substrate.

367 al

Abstract: CQ31 9020 11 ak 30 a4 51b7 Amos Flash SIMM 80 AM29F040 EDI7F33512C
Contextual Info: ^EDI EDI7F33512C 512KX32 Flash ELECTRONIC DESIGNS INC 512Kx32 Flash The EDI7F33512, EDI7F233512 and EDI7F433512 are organized as 512Kx32 and 2x512Kx32 and 4x512Kx32 respectively. The modules are based on AMD's AM29F040 - 512Kx8 Flash Device in TSOP Block Diagrams

PD2743

Abstract: WPF1M32A-90PSC5 80pin-SIMM AO523
Contextual Info: I/VHITE M IC R O E L E C T R O N IC S 2x512Kx32 5V FLASH S IM M WPF1M32A-90PSC5 P R E L IM IN A R Y * FEATURES • Access Time of 90ns ■ 100,000 Erase/Program Cycles ■ Packaging: ■ Organized as two banks of 512Kx32 • 80-pin S IM M ■ Commercial Temperature Range

Contextual Info: WS1M8-XCX White Electronic Designs PRELIMINARY* 2x512Kx8 DUALITHIC SRAM FEATURES „ Access Times 70, 85, 100ns „ Evolutionary, Corner Power/Ground Pinout „ Packaging: • 32 pin, Hermetic Ceramic DIP Package 300 „ Organized as two banks of 512Kx8 „

Q180

Contextual Info: MITSUBISHI MEMORY CARD D YN A M IC RAM CARDS M F14M 1-J57A TXX 2x512Kx32bit D R A M Card Connector Type T w o -p iece 88-pin DESCRIPTION These D R A M C A R D s have been developed based on J E I D A D R A M C A R D G U I D E L I N E V e r . 2.1. T hese c a rd s a re m a d e u s in g in d u s t r y s t a n d a r d 512K