3,3 VOL 1A Search Results

Contextual Info: Philips Semiconductors Preliminary Specification Octal buffer/line driver with 5-volt tolerant 74LVC2244A inputs/outputs; clamping resistor; 3-state_ 74LVCH2244A FEATURES QUICK REFERENCE DATA GND = 0 V; Tamb = 25 °C; t, = t, < 2.5 ns • 5-Volt tolerant inputs/outputs,

Contextual Info: SN74LVC157 QUADRUPLE 2-LINE TO 1-LINE DATA SELECTOR/MULTIPLEXER S CAS292 - JANUARY 1993 - REVISED MARCH 1994 EPIC Enhanced-Performance Implanted CMOS Submicron Process Typical Vq lp (Output Ground Bounce) < 0.8 V at VCc = 3.3 V, TA = 25°C Typical V q h v (Output V q h Undershoot)

Contextual Info: DENSE-PAC MICROSYSTEMS 16 Megabit CMOS SRAM DP3S512X32MXP PRELIMINARY DESCRIPTION: The DP3S512X32M XP is a 68-pin surface mount module consisting of four 5 1 2 K x 8 SRAM devices in plastic TSO P packages surface mounted on a FR-4 substrate. The module is available with "I"-Leads.

Contextual Info: TOSHIBA T C 7 4 LCXQ2 F / F N / F S Low-Voltage Quad 2-Input NOR Gate with 5V Tolerant Inputs and Outputs The TC74LCX02 is a high performance CMOS 2-INPUT NOB GATE. Designed for use in 3,3 Volt systems, it achieves high speed operation while maintaning the CMOS tow power dissi­

F 10 L 600

Abstract: DIL 330 65764 z1015
Contextual Info: L 65764 MATRA MHS 8 K x 8 / 3.3 Volts High Speed CMOS SRAM Description The L 65764 is a high speed CMOS static RAM organized as 8192 × 8 bits. It is manufactured using MHS high performance CMOS technology. Easy memory expansion is provided by active low chip

SMD-5962-38294

Contextual Info: L 65764 8 K x 8 / 3.3 Volts High Speed CMOS SRAM Description The L 65764 is a high speed CMOS static RAM organized as 8192 x 8 bits. It is manufactured using MHS high performance CMOS technology. Easy memory expansion is provided by active low chip select CS1 , an active high chip select (CS2), an active

LVCH16245

Abstract: SN74ALVCH16245
Contextual Info: SN74ALVCH16245 16-BIT BUS TRANSCEIVER WITH 3-STATE OUTPUTS S C ES015-JULY 1995 DGG OR DL PACKAGE TOP VIEW Member of the Texas Instruments Wldebus Family EPIC™ (Enhanced-Performance Implanted CMOS) Submicron Process ESD Protection Exceeds 2000 V Per

Contextual Info: Q Q u a l it y S e m ic o n d u c t o r , I n c . High Speed CMOS 3.3V 16-Bit Bus Registered Transceiver QS74FCT163646 FEATURES/BENEFITS DESCRIPTION • Pin and function compatible with T.l. Widebus and IDT Double-Density™ families • CMOS power levels: <1|aW typical standby

ecg semiconductors master replacement guide

Abstract: ecg master replacement guide mkl b32110 siemens mkp B32650 c945 p 331 ks transistor IC,MASTER master replacement guide Kennlinie KTY 10-6 siemens b32110 A2005 transistor
Contextual Info: Liebe Schuricht-Kunden, Ihre Zufriedenheit ist unser größtes Anliegen. Aus diesem Grunde versuchen wir, Ihnen Informationen und Ware stets zum richtigen Zeitpunkt verfügbar zu machen. Das gilt insbesondere auch für die Produkte der Siemens AG mit den drei

Contextual Info: IIMII HM 65764 DATA SHEET_ KX 8 HIGH SPEED CMOS SRAM 8 FEATURES « FAST ACCESS TIME COMMERCIAL : 15/20/25/35/45/55 ns max INDUSTRIAL/MILITARY : 20/25/35/45/55 ns (max) • LOW POWER CONSUMPTION ACTIVE: 380 mWftyp) STANDBY : 110 mW (typ) . WIDE TEMPERATURE RANGE:

74151 pin configuration

Abstract: 74151 TTL 74151 MSM10S0000 LS 74151
Contextual Info: O K I Semiconductor M S M 1 0 S 0 0 0 0 _ 0.8|im Sea of Gates Family for High-Performance, 3 and 5 Volt Applications D E SC R IPTIO N The OKI MSM10S0000 Sea of Gates family is a high-performance, high-density semicustom product using OKI's scalable, 0.8|am drawn 0.6|_im effective , two layer metal, polysilicide, dual-well process

Contextual Info: H Y 5 1 V 4 2 6 0 B •HYUNDAI S e r ie s 256KX 16-bit CMOS DRAM with 2 CAS PRELIMINARY DESCRIPTION The HY51V4260B is the new generation and fast dynamic RAM organized 262,144 x 16-bit configuration employing advanced submicron CM OS process technology and advanced circuit design technique to achieve

74AC11258

Contextual Info: 54AC11258, 74AC11258 QUADRUPLE 2-LINE TO 1-LINE DATA SELECTORS/ MULTIPLEXERS WITH 3-STATE OUTPUTS TIO115— D 3257, JAN U AR Y 1989— REVISED M AR CH 1990 54AC11258 . . . J PACKAGE 74AC11258 . . . DW OR N PACKAGE 3-State Outputs Interface Directly with System Bus

Contextual Info: D E N S E -P A C m i c r o s V s r ~m s /H -D & n s u s High Density Memory Device 512 Megabit CM OS 3.3V EDO DRAM 256 Megabit CM OS 3.3V EDO DRAM 128 Megabit CM OS 3.3V EDO DRAM PRELIMINARY DESCRIPTION: PIN-OUT DIAGRAM The/fi-7 e«JM series is a family of interchangeable memory

Contextual Info: E Ericsson Internal PRODUCT SPECIFICATION Prepared also subject responsible if other EAB/FAC/P Johan Hörman Approved 1 (4) No. Checked BMR 463 series POL Regulators Input 4.5-14 V, Output up to 20 A / 66 W 1/1301-BMR 463Technical Uen Specification Date

Contextual Info: PERICOM PI74ALVCH16652 16-Bit Bus Transceiver and Register with 3-State Outputs Product Description Product Features • • • • • • •

Schmersal AZM 160

Abstract: Schmersal IEC 947-5-1 16b2 zener diode THERMAL Fuse m20 tf 115 c IEC 60947-5-1 limit switch ex d Schmersal AZM 160 22 ISO ultrasonic sensor standards symbols zener diode catalogue relay tec 1401 EN 50041 IEC 60947-5-1 limit switch
Contextual Info: L Protection – ATEX Explosion Protection Catalogue | Version 03 b_atep02v001.indd 1 08.12.2008 14:11:26 www.schmersal.com You will also find detailed information on our entire product progamme on our website: www.schmersal.com. Online documentation in six languages

upd4104

Abstract: 4104D HPD4104 IPD4104-1 PD4104
Contextual Info: NEC MPD4104 MPD4104-1 MPD4104-2 NEC Electronics US.A. Inc. Microcomputer Division 4096 X 1 STATIC N M O S RAM D E SC R IP T IO N The ¿¿PD4104 is a high performance 4K static RAM . Organized as 4096 x 1, it uses a combination of static storage cells with dynamic input/output circuitry to achieve

Contextual Info: NEC MPD4104 MPD4104-1 MPD4104-2 NEC Electronics US.A. Inc. Microcomputer Division 4096 X 1 STATIC NMOS RAM D E S C R IP T IO N The ¿¿PD4104 is a high performance 4K static RAM . Organized as 4096 x 1, it uses a combination of static storage cells with dynamic input/output circuitry to achieve

cyclohexene

Abstract: 82306 1010218 urea formaldehyde resin adhesive tetrabutyl tin zinc naphthenate hydroquinone manufacturing process calcium chloride p-chlorophenol pentaerythritol
Contextual Info: Matsushita Electric Group Chemical Substance Management Rank Guidelines Version 2 July 6, 2000 Matsushita Electric Industrial Co., Ltd. Contents 1. Purpose ････････････････････････････････････････････････････････1

Contextual Info: E Ericsson Internal PRODUCT TABLE OF CONTENTS SPECIFICATION Prepared also subject responsible if other SEC/S GavinSusanne EAB/FAC/P Du Eriksson Approved BMR 463 series Regulators EAB/FAC/P [SusannePOL Eriksson] 1 (3) 2 (4) No. Checked Input 4.5-14 V, Output up to 25 A / 82.5 W

Contextual Info: E Ericsson Internal PRODUCT TABLE OF CONTENTS SPECIFICATION Prepared also subject responsible if other SEC/S GavinSusanne EAB/FAC/P Du Eriksson Approved BMR 463 series Regulators EAB/FAC/P [SusannePOL Eriksson] 1 (3) 2 (4) No. Checked Input 4.5-14 V, Output up to 25 A / 82.5 W

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT 1M-BIT CMOS SYNCHRONOUS FAST SRAM 32K-WORD BY 36-BIT PIPELINED OPERATION Description The ,uPD431636L is a 32,768-word by 36-bit synchronous static RAM fabricated with advanced CMOS technology using N-channel four-transistor memory cell.

BMR462

Abstract: fuse 12a smd
Contextual Info: E Ericsson Internal TABLE OF CONTENTS Prepared also subject responsible if other SEC/S Stella Song Approved 1 (1) No. Checked BMR462 series PoL Regulators Input 4.5-14 V, Output up to 12 A / 60 W 001 52-EN/LZT 146 434 Uen Specification Technical Date 2012-09-26