3 AMPERE SILICON DIODE Search Results

in5400 diode

Abstract: IN5408 IN5408 diodes Current Rating of IN5408 diode 3E05 diode IN5408 IN5400 in5404 diode Current Rating of IN5402 diode in5408 diode
Contextual Info: DIODES LIMITED IN5400 t o IN5408 FAIRACRES ESTATE. DEDWORTH ROAD. W INDSOR. BERKSHIRE. Telephone: W INDSOR 69571 Telex: 847255 SEMICONDUCTOR MANUFACTURERS SINGLE JUNCTION THREE AMPERE SILICON RECTIFIERS The 3E Series silicon rectifiers offer current ratings up to 3 Am­

5ME3

Contextual Info: SINO— AMERICAN SILICON 5ME 3> • DQQQQS1 Q ■ —p 2 3 -OS SURFACE MOUNT GLASS PASSIVATED FAST SWITCHING SILICON RECTIFIER V0LTM3E RANGE 50 to 600 VOltS CURRENT 0.5 Ampere FEATURES • For surface mounted applications • High temperature metallurgically bonded-no

RUTTONSHA all diodes

Abstract: RUTTONSHA SILICON RECTIFIER 6 Fmr 60 25 fmr 160 RUTTONSHA SILICON RECTIFIER 6 F 6 FMR 40 RUTTONSHA RUTTONSHA 120 6 FMR 40 rectifier RUTTONSHA SILICON RECTIFIER 6 Fmr 120 RUTTONSHA type 6 fmr 100
Contextual Info: Ruttonsha International Rectifier Ltd. SILICON RECTIFIERS RUTTONSHA 3 & 6 Ampere Silicon Power Diodes FEATURES ❖ All diffused series. ❖ Available in normal & reverse polarity. ❖ Device conforms to IS 3700 III & IS 4400 (III). ❖ Device outline conforms to IS 5000 (Do. 4) except stud.

107J

Abstract: 106J SMR-101J
Contextual Info: SINO-AMERICAN SILICON SME J> • fl5 fll7 Mb 0000057 1 SURFACE MOUNT GLASS PASSIVATED SILICON RECTIFIER "T'-2 3 - Q S VOLTAGE RANGE 50 to 1000 Volts CURRENT 1.0 Ampere • For surface mounted applications • High temperature metallurgically bonded-no compression contracts as found in other diodeconstructed rectifiers

PR3002 diode

Abstract: mic bridge rectifier 1N5401 mic 1N5408 mic diode bridge 35 Ampere 1000V 1N5404 bridge rectifier diode PR3002 1N5408 Diode 1N5408 Diode 1N5403 PR3003
Contextual Info: 6862229 DO PACCOM ELECTRONICS zr SILICON SINGLE PHASE 3 AMPERE RECTIFIER/FAST RECOVERY DIODE _ -P4CC0I1 ELECTRONICS I • w • High current capability • Low leakage • Low forward voltage drop Type D1 DIMENSIONS A L D1 D2 25 9.53 1.42 5.33 .98 .38 .056

B897

Contextual Info: European “Pro Electron” Registered Types CNY33 Optoisolator G aA s Infrared Emitting Diode and N PN Silicon High Voltage Phototransistor M IL L IM E T E R S M IN . absolute m axim um ratings: 25°C 6 milliwatts milliamps ampere M AX. 3 30 3Ò0 300 RE f

Motorola AN222A

Abstract: application MJ10023 U430B motorola 222A motorola SPS bipolar
Contextual Info: M OTOROLA Order this document by MJ10023/D SEMICONDUCTOR TECHNICAL DATA M J 1 0 0 2 3 Designer’s Data Sheet SW ITCHMODE Series NPN S ilicon Power Darlington Transistor w ith Base-Em itter Speedup Diode 40 AMPERE NPN SILICON POWER DARLINGTON TRANSISTOR

Herrmann KB 60

Abstract: of diode herrmann bridge rectifier herrmann silicon bridge rectifier 3KHB05 3KHB10 2KHBS4
Contextual Info: Bulletin 55 - 503 KHEL Khandelwal Herrmann Electronics Limited VRRM : 50 - 1000 Volts V RMS : 20 - 500 Volts I O AVG : 3 Ampere TECHNICAL SPIFICATIONS OF SILICON BRIDGE RECTIFIER DIODES TYPE 3KHB05 TO 3KHB10 FEATURES 22 .0 • Low Cost 15 .0 7.0 • Compact Potted Version

2N5986

Abstract: 2N5987 2N5988 2N5989 2N5991 MBD5300 sc 0645 225AB diode F4 3J 75S4
Contextual Info: MOTOROLA SC 6367254 DE | b 3 t . 7 2 S 4 -tXSTRS/R F> MOTOROLA SC XSTRS/R F 96D Ö 0 4 0 4 OoaOMDM D - p r .3 3 - m T PNP MOTOROLA ’ 2N5986, 2N5987 2N5988 SEMICONDUCTOR TECHNICAL DATA NPN 2N5989, 2N5991 12 AMPERE HIGH POWER PLASTIC COMPLEMENTARY SILICON POWER TRANSISTORS

4229P-L00-3C8

Abstract: 20A400 MJ12005D POT CORE 4229P-L00 Ferrox EC52-3C8
Contextual Info: MOTOROLA SC XST R S/ R F ME D I t3b75sq 0 0850 17 0 | ^ 33-/3 MOTOROLA SEMICONDUCTOR TECHNICAL DATA D e sig n o rw D ata Sheet 8.0 AMPERE NPN SILICON POWER TRANSISTORS NPN HORIZONTAL DEFLECTION TRANSISTOR WITH INTEGRATED DAMPER DIODE 1500 VOLTS 100 WATTS . . . specifically designed for use in large-screen color-deflection

2N6756

Contextual Info: MOTOROLA SC 14E D I b3b?aSM Q D Öl bic c. 1 " _r - 3 7W y XSTRS/R F MOTOROLA • I SEM ICONDUCTOR TECHNICAL DATA 2N6756 14 AMPERE N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR N-CHANNEL TMOS POWER FET These TM O S Power FETs are designed for low voltage, high

CASE353-01

Contextual Info: It » e | b3t7 S S 4 DOfiDTìS 7 | 6 3 6 7 2 54 MOTOROLA SC CXSTRS/R F . 96D 8 0 9 9 5 T - J? -ÌS MJ10041 MJ10044 MJ10047 MOTOROLA SEMICONDUCTOR TECHNICAL DATA s^ sa^ Jesig n er’s D a ta Sh eet xisn - 25, 50, and 100 AMPERE NPN SILICON POWER DARLINGTON

JE3300

Abstract: MJE3310 motorola amplifier MJE3301 MJE3300 je331
Contextual Info: MOTOROLA SC X S T R S /R 12E 0 F b 3 fei? 5 5 4 I 0 QÖS3 S 1 NPN M O TO RO LA T | r-13'33 MJE3300, MJE3301 • SEMICONDUCTOR PNP TECHNICAL DATA MJE3310 PLASTIC DARLINGTON COMPLEMENTARY SILICON ANNULAR POWER TRANSISTORS DARLINGTON 4-AMPERE . . . designed for general-purpose amplifier and high-speed switching

bu323

Abstract: bu323a
Contextual Info: M O T O R O L A SC 1EE 0 I XSTRS/R F & | b3fc,7554 0 0 0 4 0 0 0 MOTOROLA SEM ICO N DUCTOR TECHNICAL DATA 16 AMPERE PEAK NPN SILICON POWER DARLINGTON TRANSISTOR The B U 3 2 3 , B U 3 2 3 A are m o no lith ic darlington transistors designed fo r a u to m otive ignition, sw itch in g regulator and m o to r

mj10025

Contextual Info: MOTOROLA SC XSTR S/R F 12E D | b 3 b 7 2 S ‘4 OGflSObfl MOTOROLA M | 9 MJ10024 MJ10025 SEMICONDUCTOR TECHNICAL DATA D e s i g n e r ’s D a t a S h e e t 2 0 AMPERE N PN S ILIC O N POWER D A R LIN G TO N TR A N S IS T O R S SWITCHMODE SERIES NPN SILICON POWER DARLINGTON TRANSISTORS

ln4001

Abstract: 1N4001-1N4007 IN4003 diode 1N4001 specifications 1N4007 diodes 1N4007 1N4001 IN4003 forward voltage diode 1n4001 diode in4003
Contextual Info: DIODES LIMITED 1N4001-1N4007 SERIES FAIRACRES ESTATE. DEDW O RTH ROAD. W IN D S O R . BERKSHIRE. Telephone: W IN D S O R 69571 Telex: 847255 SEMICONDUCTOR MANUFACTURERS 1 AMPERE SILICON RECTIFIERS With “LOCKED-IN” Reliability FEATURES • Superior Rectification Efficiency

BR84B

Abstract: BR88B Rectifier BR86B bridge rectifier Br88B BR81B BR82B BR88B bridge rectifer br-84b
Contextual Info: DIODES LIMITED BR8XB SERIES FAIRACRES ESTATE. DEDW O RTH ROAD, W IN D S O R . BERKSHIRE. Telephone: W IN D S O R 69571 Telex: 847255 SEMICONDUCTOR MANUFACTURERS 1.3 AMPERE SILICON BRIDGE RECTIFER With “LOCKED-IN” Reliability FEATURES High Conductance Leads • Advanced Surface Passivation • Low-Noise Operation

BR510

Abstract: BR54 A1510 BR52 br56 A1505 A151 A152 A154 A156
Contextual Info: DIODES LIMITED A15X-BR5X SERIES FAIRACRES ESTATE. DEDW O RTH R OAD. W IN D S O R . BERKSHIRE. T elephone: W IN D S O R 69571 T elex: 847255 SEMICONDUCTOR MANUFACTURERS 1 AMPERE SILICON BRIDGE With “ LOCKED-IN” Reliability FEATURES High Conductance Leads • Advanced Surface Passivation • Low-Noise Operation

SD10 Diode

Abstract: SD4 diode diode SD4 diodes with 4 ampere SD6 Diode diode 5 ampere SD-05-SD-10 5 ampere diode SD-05 SD-10
Contextual Info: DIODES LIMITED SD-05-SD-10 SERIES FAIRACRES ESTATE. DEDW ORTH ROAD, W IN D S O R . BERKSHIRE. T elephone: W IN D S O R 69571 T elex: 847255 SEMICONDUCTOR MANUFACTURERS 1 AMPERE SILICON RECTIFIERS With “LOCKED-IN” Reliability FEA TU R ES. High Conductance Leads

schottky 400v

Abstract: P600 diode P600 P600 PACKAGE fast recovery diode 400v 5A diode sb5 SCHOTTKY diode 400V 1A P1200 UF600 rectifier 400V 5A
Contextual Info: „Low Vf“ Bipolar Dioden Eine interessante Alternative zu hochsperrenden Schottky-Dioden “Low Vf“ Bipolar Diodes An interesting alternative to high blocking Schottky diodes 1 Diotec Semiconductor AG 2005 V04 US Anwendungsbeispiele von Schottky-Dioden,

diode 3a05

Abstract: 3a05 diode IN4142 3A05 Diode diode with PIV 200 1N4145 COLOR MARKING CODE ON DIODE 1N4142 1IN4139-1N4145 IN4142
Contextual Info: DIODES LIMITED 1N4139-1N4145 SERIES FAIRACRES ESTATE. DEDWORTH ROAD. W IN D S O R . BERKSHIRE. Telephone: W IN D S O R 69571 Telex: 847255 SEMICONDUCTOR MANUFACTURERS SINGLE JUNCTION THREE AMPERE SILICON RECTIFIERS M E C H A N IC A L < 4 — .310 MAX - i .050

Contextual Info: RL201 thru RL207 Pb Free Plating Product Pb RL201 thru RL207 2.0 Ampere Silicon General Purpose Rectifier Diodes DO-15 Features • High surge current capability • 2.0 ampere operation at TA = 75oC with no thermal • runaway • Low reverse leakage •

AL1510

Abstract: FL4010 ag204 IN5822 diode ag208 IN4007 bridge rectifier ic IN4007S IN5405 diode AG206 Diode IN5398
Contextual Info: 1. Q U IC K R E F E R E N C E TABLE FOR R EC TIFIE R DIO D E 1-1 1 AMPERE TO 6 AMPERES GENERAL PURPOSE AXIAL LEAD SILICON RECTIFIER VF V @IO (DC) PACKAGE PAGE 50 100 200 300 400 500 600 800 1000 FWD SURGE (A) 1.0 IN4001 IN4002 1N4003 - IN4004 - IN4005 IN4006

RUTTONSHA 40 hm 160

Abstract: 70 HM ruttonsha RUTTONSHA 40 hm RUTTONSHA 85 HM ruttonsha RUTTONSHA 40 hm 120 RUTTONSHA POWER DIODE 40 hmr 120 70 hmr 160 100 hmr ruttonsha
Contextual Info: Ruttonsha International Rectifier Ltd. SILICON RECTIFIERS RUTTONSHA 85 Ampere Silicon Power Diodes FEATURES ❖ Diffused series. ❖ Available in normal & reverse polarity. ❖ Device conforms to IS 3700 III & IS 4400 (III). ❖ Device outline conforms to IS 5000 (Do. 5).