3 DG 1008 Search Results

Contextual Info: CONTACT CUSTOMER SERVICE CALL 512-863-5585 x6464 DIMENSIONS metric table below DG 3 – Strain-Relief Backshell with Elongated Top Entry and Lid For use with D-Subminiature and MIL-DTL-24308 connectors. Sample Part Number Format: DG-132-015-000-SH00 ORDER FORM

dash

Abstract: powercron 85910071
Contextual Info: R/M R/A NEXT ASSY MODEL S c re w s iz e 4 - 4 0 x 3 / 8 * Round .036L914] CRS 1008/1010 3RD ANGLE PROJECTION D B Change fin is h "to E - c o a t E p o xy - by J. C. 01- 17-20 07 Chg Finish "to T ri v a le n t C h ro n a te - by J.C. 2 -2 0 -0 6 3/4/03 1 2 /6 /0 2

Contextual Info: MIL-STD-790 PRODUCT ASSURANCE CERTIFIED LABORATORY SUITABILITY CERTIFIED REV DATE PAGE DESCRIPTION AUTH MIL-PRF-38534 HYBRID MICROCIRCUIT CERTIFIED ECN Originator Date Engineering Date RD 2-19-13 BA 2-19-13 TITLE: J-Leaded Crystal Oscillator PART #: DATE:

MCM91430

Abstract: Motorola CMOS Dynamic RAM 1M Motorola CMOS Dynamic RAM 1M x 1 1mx1 DRAM DIP MCM511000A mcm511000 1K x4 static ram application note Motorola CMOS Dynamic RAM 16m x 32 TSOP 400 86 MCM69F536B
Contextual Info: Memory Products In Brief . . . Motorola’s memory product portfolio has been expanded to support a broad range of engineering applications. Included in this portfolio are asynchronous devices with access times of 6 ns at 256K–bit density, 6 ns at 5 V 1

pj 89 diode

Abstract: HV7708PG HV7808 pj 44 diode HV5808 VQ10003 VN 300 tp2106 220v ac to 9v dc converter pj 56 diode
Contextual Info: M Supertex m e. Selector Guides MOSFETs S upertex enhancem ent- and depletion-m ode MOSFETs, utilizing vertical and lateral double-diffused processes, are suitable for a w ide variety of applications. They feature low capacitance for ease of drive and low gate-source threshold voltages fo r direct

Contextual Info: CONTACT CUSTOMER SERVICE CALL 512-863-5585 x6464 DIMENSIONS metric table below DG 2 – Strain-Relief Backshell with Elongated Top Entry For use with D-Subminiature and MIL-DTL-24308 connectors. Sample Part Number Format: DG-122-015-000-SH00 ORDER FORM ENTER

Contextual Info: CONTACT CUSTOMER SERVICE CALL 512-863-5585 x6464 DIMENSIONS metric table below DG 2 – Strain-Relief Backshell with Elongated Top Entry For use with D-Subminiature and MIL-DTL-24308 connectors. Sample Part Number Format: DG-122-015-000-SH00 ORDER FORM ENTER

Contextual Info: CONTACT CUSTOMER SERVICE CALL 512-863-5585 x6464 DIMENSIONS metric table below DG 1 – Strain-Relief Backshell with Elongated Top Entry For use with D-Subminiature and MIL-DTL-24308 connectors. Sample Part Number Format: DG-112-015-000-SH00 ORDER FORM ENTER

5046C

Contextual Info: A S - 5 0 4 0 / A S - 5 0 5 1 Fam ily High Level CMOS Analog Gates FjflEM n L GENERAL DESCRIPTION FEATURES • Switches Greater Than 20 V p p Signals W ith • • Quiescent C urrent Less Than IfjA Overvoltage P rotection to ±25V • Break-Before-Make S w itching to F F 200nsec,

Mitsubishi a1shcpu

Abstract: A1SY10EU A2SH A1SHcpu A1S61PN A1SJ71AT21B A6BAT Melsec a1shCPU MITSUBISHI INTELLIGENT POWER MODULES A1S61PN A2ASCPU-S30
Contextual Info: MITSUBISHI ELECTRIC 130 Programmable Logic Controllers 1 MELSEC AnS, QnAS 130 130 X 6,5 93,6 130 1 2 3 4 5 6 7 STOP POWER RUN LCLR ERROR RESET RUN RESET MITSUBISHI MITSUBISHI 1 OUTPUT INPUT 3A AC 100/110/120V DC5V AC 200/220/240V 69,5 2 3 4 5 6 7 8 9 A B C

VP 1176 datasheet

Abstract: LD 757 ps TGF4250-EEU 3 DG 1008
Contextual Info: T R I Q U I N T S E M TGF4250-EEU I C O N D U C 4.8 mm Discr ete HFET ● ● ● ● ● ● 4800 µm x 0.5 µm HFET T O R , I N C . 4250 Nominal Pout of 34- dBm at 8.5- GHz Nominal Gain of 8.5- dB at 8.5- GHz Nominal PAE of 53% at 8.5 - GHz Suitable for high reliability applications

AC125K

Abstract: 6AN7 tungsram 3S035T-1 ecc83 application notes ECL86 DG 7-123 tungsram AC125UZ PENTODE pl 508 ot-400 tungsram
Contextual Info: TUNGSRAM 1 ELECTRON TUBES AND SEMI­ CONDUCTORS 1979 RADIO & TV RECEIVING TUBES OSCILLOSCOPE & MONITOR TUBES TRANSMITTING TUBES, RECTIFIERS & MICROWAVE TUBES SEMICONDUCTORS RECEIVING TUBES CONSUMER TYPES INDUSTRIAL TYPES VOLTAGE REGULATORS TY P E ASSO R TM EN T

50b11

Abstract: pin diagram of MOSFET 5040 T 3512 H diode 190AP 5042M as5040 451C PIN DIODE SPDT DRIVER CIRCUITS AS-5047 IC 5051
Contextual Info: n fr iV S ^ fS Il ^ _ jJ fllM in ^ l^ O [L A S - 5 0 4 0 / A S - 5 0 5 1 F a m ily H ig h L e v e l C M O S A n a lo g G a te s FEATURES GENERAL D E S C R IP TIO N • Switches Greatei Than 2 0V pp Siynals W ith i 1 5V Supplies • • • • Quiescent C urrent Less Than 1/j A

Contextual Info: H D404808/H D4074808/ H D40L4808/H D407L4808 D escription • The MCU is a 4-bit single chip HMCS400 series m icrocom puter providing high pro­ gram productivity. It incorporates large size m em ory, LCD d riv er/c o n tro ller, v o lta g e com parator, and 32 kHz w atch oscillator cir­

CX20052A

Abstract: CX20052 P-24P-0 MC10116 application MC10116 CXA1008P CXA1009P cxa1006p mm5870 application notes mc10116
Contextual Info: CXA1008P/1009P SONY. High-speed Sample and Hold Amplifiers Description CXA1008P/1009P are bipolar IC’s developed for the purpose of sample holding video signals and other signals at high-speed. Features •Maximum sampling frequency CXA1008P CXA1009P •Linearity

Contextual Info: T R I Q U I N T S E M I C O N D U C T 7c TGF4250-EEU 4.8 mm Discrete HFET , I N C . 4250 4800 Nominal Pout of 3 4 -dBm at 8.5-GHz Nominal Gain of 8.5-dB at 8.5-GHz # Nominal PAE of 53% at 8 .5 -GHz Suitable for high reliability applications # 0,572 x 1,334 x 0,102 mm 0.023 x 0.053 x 0.004 in.

Contextual Info: S E M I C O N D U C T O R , I N C TGF4250-EEU 4800 iim x 0.5 Jim HFET Nominal Pout of 34-dBm at 8.5-GHz Nominal Gain of 8.5-dB at 8.5-GHz # Nominal PAE of 53% at 8.5-GHz O Suitable for high reliability applications # 0,572 x 1,334 x 0,102 mm 0.023 x 0.053 x 0.004 in.

RF6561

Abstract: RF6261 RF6261B
Contextual Info: RFRD6461 RFRD64613G PowerSmart Power Platform 3G POWERSMART™ POWER PLATFORM PCB Footprint: 7.6mm x 15.3mm x 1.02mm BATTERY RF DETECTOR OUT       Boost - Buck DCDC Converter 2 Component Placement Power Platform  RF6261B Power Amplifier:

RF6561

Abstract: RF6261 RF6261B RFRD6461 WCDMA duplexer RF626 SP4T Antenna Switch RF65 rf coupler rf detector
Contextual Info: RFRD6461 RFRD64613G PowerSmart Power Platform 3G POWERSMART™ POWER PLATFORM PCB Footprint: 7.6mm x 15.3mm x 1.02mm BATTERY RF DETECTOR OUT Features        2 Component Placement Power Platform  RF6261B Power Amplifier: 6.0mm x 8.0mm

PX1002

Contextual Info: REV ECN NO. DESCRIPTION A 1192-21 INITIAL RELEASE B 4611 EIXTURE UPDATE A P P /D A T E SB 5/20/94 BILL OF MATERIALS DR AWN BY/DATE: SEQ QTY RFM P /N DESCRIPTION REF DES 1 1 400-0735-001 PCB REV: X3 PCB 2 2 500-0003- 020 CAP, NPO 2.0 pF C1,2 3 2 N /A CHIP INDUCTOR 620 nH

DIODE smd B44

Abstract: b48 DIODE schottky ef12.6 core transformer creepage schottky b37 diode LNK613DN lnk616 ee10 transformer EEL-19 EE16W lnk616 pg
Contextual Info: Application Note AN-44 LinkSwitch-II Family Design Guide Introduction of no-load power at 230 VAC without an external bias circuit, and to consume below 30 mW with a low-cost bias circuit. This simplifies meeting harmonized energy efficiency standards such

Contextual Info: D-SUB CONNECTORS EXAMPLE & ORDERING CODE STRAIGHT PDI - NUM BER O F PINS: S- 15 = = = = W H 09 15 25 37 G ENDER: MALE =s FEMALE =R T ER M IN ATIO N TYPE: P.C. PINS — BLANK SOLDER CUP = s = E E XTENDED P.C. PINS INSULATOR COLOR: BLACK = W HITE = w BLANK M ATING FACE:

CXA13960

Abstract: CX20116 CXA1066K CXA1396D CXA1396K tantalus capacitor sony CXA13 CXA 2159 S
Contextual Info: SEE D B 3 B 2 3 B 3 □ □ □ 4 2 L.Ü B ib « S O N Y • C X A 13 9 6 D / K SONY, 8-bit 125 MSPS Flash A/D Converter SONY Description CORP/COMPONENT The CXA1396D/K are 8-bit ultrahigh-speed flash A/D converter ICs capable of digitizing analog signals at the

CX20052

Abstract: sony KSS 240 mc10116 CX20052A
Contextual Info: CXA1008P/1009P SONY. High-speed Sample and Hold Amplifiers Description CXA1008P/1009P are b ip o la r IC’s developed fo r th e purpose o f sam ple h o ld in g video sig n a ls and o th e r sig n a ls at high-speed. Features •M a xim u m sa m p ling frequency