3 PIN PHOTOCELL Search Results

6 volt ldr

Abstract: light dependent resistor circuit diagram LDR internal diagram Circuit diagram of LDR automatic on off control using ldr with microcontroller LDR Datasheet ldr 30K 3 pins LDR automatic on off control using ldr ldr notes
Contextual Info: ELM337 Light Switch Description Features The ELM337 provides a convenient means to interface standard photocells or light dependent resistors LDRs to digital logic circuits. It provides an input comparator with hysteresis, line frequency filtering, digital delays, and high current output

hamamatsu CDs photocell

Abstract: 0-9 and A B C D to 7-segment display module hamamatsu photocell HD74HC139 HD74LS240 P1201 hamamatsu CDs photoconductive
Contextual Info: APPLICATION NOTE H8/300L SLP Series Connecting a Cadmium-Sulfide Photocell Introduction A CdS cell is connected to the analog input pin, and the results of A/D conversion are displayed on seven-segment LEDs. Target Device H8/38024 Contents 1. Specifications . 2

15 1e75

Abstract: 1E75 S1190-01 photocell
Contextual Info: _~ "V229609 HAMAMATSU XQftP %: , > il D E ^ E S T t^ Q 0D 1E75 I Ham am atsu H1941 and H1940 are opto-hybrid ICs specially designed for transm ission or reflection-m ode photoelectric relays using infrared LEDs and PIN silicon photocells. The H1941 is a light-em itting hybrid

IC-9002

Abstract: upd74hc04 IC9002 ccd 2118 CCD linear 22pin CCD linear array PD3753 pd74HC04 2SA1005 photocell sensor
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD3753 2088-BIT CCD LINEAR IMAGE SENSOR WITH PERIPHERAL CIRCUIT The µ PD3753 is a 2088-bit high sensitivity CCD Charge Coupled Device linear image sensor which changes optical images to electrical signal. The µ PD3753 consists of 2088-bit photocell array and a line of 2088-bit CCD charge transferred register.

ICL8062

Abstract: LED Driver add 5201 camera 24 pin ICL8061 ATIC 39 b4 8062C 5201 IC schematic diagram of ip camera sensor circuit diagram of pill camera
Contextual Info: ICL8061/8062 Camera Exposure Control Circuits FEATURES • 50pA to 500/iA photocell current range • Low power dissipation • Track & hold ckt for mirror-up or exposure memory use. • Direct linearized inputs for aperture values, sensitivity, manual shutter speed, etc.

diode sg 5 ts

Abstract: 7836M
Contextual Info: Section 4 Fundamental Characteristics 4.1 LD Fundamental Characteristics L D c h i p is 5 to 10 m m . S ince p h o to v o lta ic sensitivity varies with devices, each photocell must 4.1.1 L igh t vs. C urrent C haracteristics under be calibrated with a standard cell and R2 must be

digital voltmeter

Abstract: load cell interface WITH ADC Photoresistor application note APP4716 AN4716 MAXQ2010 5 way switch
Contextual Info: Maxim > App Notes > General engineering topics Microcontrollers Keywords: MAXQ2010 EV kit, MAXQ, 2010, analog to digital, ADC, analog to digital converter, LCD, liquid crystal display, digital voltmeter, voltmeter, photocell, photoresistor, thermistor, a/d, a to d, analog, digital

Silicon Photocells

Abstract: MS4A MS11 MS11A MS11AE MS11B MS2AE
Contextual Info: M S S ER IES SILICON MESA PHOTOCELLS A range of silicon photovoltaic cells of mesa construction available in sizes from micro-miniature to large active area for general purpose use. Unencapsulated cells are coated with a special varnish to protect against contamination and moisture

Contextual Info: MS SERIES SILICON MESA PHOTOCELLS A range of silicon photovoltaic cells of mesa construction available in sizes from micro-miniature to large active area for general purpose use. Unencapsulated cells are coated with a special varnish to protect against contamination and moisture

phototransistor sensitive to green light

Abstract: photoelectric burglar alarm silicon solar cell phototransistor sensitive to yellow light photo resistor light APPLIED SOLAR ENERGY solar cell Solar sun sensor light sensitive burglar alarm project silicon photocell
Contextual Info: CADMIUM SULPHIDE PHOTOCIELL SILICON SOLAR CELL PHOTO TRANSISTOR DISPLAY AND OPTO ELECTRONIC D EVICES 276-116 CADMIUM SULPHIDE PHOTOCELL GENERAL DESCRIPTION A c a d m i u m s u l p h i d e p h o t o c o l l i s a l i ghl v a r i a b l e r e s i s t o r w h i c h i s m o s t

NSL-810

Abstract: 811B silicon photocell NSL-710 NSL-811
Contextual Info: • 8255271 SILONEX 73 INC » T |ñ a S S S 7 1 0DD0E4ñ S w 7^ r r - i r PHOTOCELL BULLETIN « 1 NSL-710BG/810BG/811BG BLUE SENSITIVE PHOTODIODES G ENERAL DESCRIPTION No. 15030 The N S L-710B G /810B G /811B G are TO-18 packaged, blue sen­ sitive silicon photodiodes. W ith near-human eye response

znp100

Abstract: ZNP102
Contextual Info: 5bE ]> • ^70570 M S SERIES D G D 7 D 3 4 7flD « Z E T B ZETE X s e m i c o n d u c t o r s SILICON M E S A PHOTOCELLS A range of silicon photovoltaic cells of mesa construction available in sizes from micro-miniature to large active area for general purpose use.

ZNP100

Abstract: ms6b photocells
Contextual Info: ZETEX S E M I C O N D U C T O R S IbE » M S SERIES - • TT7GS7Ô DDDbfibfl 3 M Z E T 3 . SILICON MESA PHOTOCELLS Unencapsulated cells are coated with a special varnish to protect against contamination and moisture ingress. Encapsulated Cells are set into tough bakelite or epoxy

Silicon Photocells

Abstract: MS1B
Contextual Info: 3E PLESSEY SEMICOND/DISCRETE 7220533 PLESSEY DE^.72BDS33 QOQlflflE SEMICOND/ D I S C R E T E man A -R .m f 32C 01882 MS SERIES T-41 -49 SILICON M ESA PHOTOCELLS A range of silicon photovoltaic cells of mesa construction available in sizes from micro-miniature to

Contextual Info: •'e~' ALLEGRO MICROSYSTEMS INC ^ i l l ! '33E D GSQ433Ö 00QSMH7 = LGR 3311 AND. iM lÄ P R E C IS IO N L IG H T SENSORS w ith c a lib r a te d C u r r e n t A m p lifie r s Direct replacements for photocells and phototransistors, the ULN3311T and ULN3312T precision light sensors are two-terminal

Contextual Info: nRM PC ON/OFF PHOTOCELL RECESSED MOUNT • LOW VOLTAGE SPECIFICATIONS FEATURES Full On/Off Switching Control Communicates w/ nLight Network Remotely Configurable/Upgradeable Automatic Set-Point Calibration Push-Button Programmable Green LED Indicator PHYSICAL SPECS

Contextual Info: Catalog Number: Date: Project: OVERVIEW The nCM ADCX RJB and nCM PC RJB photocell sensors are ceiling/surface mount devices that provide a range of daylight harvesting features for nLight Control System installations with finished ceilings e.g. ceiling tiles, sheetrock, plaster . The nCM PC RJB version provides on/off

LF157H

Contextual Info: LF157 Operational Amplifiers/Buffers Q3 HARRIS LF157 Monolithic JFET Input Operational Amplifiers LF157, LF157A, LF357, LF357A Wide Band Decompensated Av m IN = 10 General Description These are among the first m onolithic J F E T input opera­ • Photocell amplifiers

PD4066

Abstract: PIR SENSOR 750 s st 2SC945 equivalent uPD3594 clock generator using ic 555 nec CCD LINEAR SENSOR 22-pin upd359 upd35
Contextual Info: «Éb MOS INTEGRATED CIRCUIT /¿PD3594 2 592-BIT CCD LINEAR IMAGE SENSOR WITH PERIPHERAL CIRCUITS T he /iPD3594 is a 2 592-bit high sensitivity CCD Charge Coupled Device linear im age senso r w hich changes optical im ages to electrical signal. T he ¿/PD3594 h as an output am plifier w hich has high gain and w ide output range, and w hich can switch

nec CCD LINEAR IMAGE SENSOR

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT iiPD3797 5300 PIXELS X 3 COLOR CCD LINEAR IMAGE SENSOR The ¿¡PD3797 is a color CCD Charge C oupled Device linear image sensor w hich changes optical im ages to electrical signal and has the function of color separation.

orp 12 photocell

Abstract: photocell orp 12 nec CCD LINEAR SENSOR 22-pin LX 2908 IC-2908
Contextual Info: MOS INTEGRATED CIRCUIT 2 048-BIT CCD LINEAR IMAGE SEN SOR WITH PERIPHERAL CIRCUITS T h e p P D 3 5 9 3 is a 2 0 4 8-b it high s e n s itiv ity C CD C h arg e C o u p led D e vice lin e a r im ag e se n so r w h ich ch a n g e s o p tical im a g e s to e le c tric a l s ig n a l.

CCD Linear Image Sensor 32pin

Abstract: CCD linear 32pin nec CCD LINEAR IMAGE SENSOR IC 4 pins PD3797D cmos sensor 32pin S5300 V100 nec color linear image sensor nec CCD LINEAR IMAGE SENSOR color
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD3797 5300 PIXELS x 3 COLOR CCD LINEAR IMAGE SENSOR The µPD3797 is a color CCD Charge Coupled Device linear image sensor which changes optical images to electrical signal and has the function of color separation. The µPD3797 has 3 rows of 5300 pixels, and each row has a single-sided readout type of charge transfer register.

motion DETECTOR CIRCUIT DIAGRAM

Abstract: motion DETECTOR CIRCUIT DIAGRAM for light ACTIVE INFRARED MOTION DETECTOR motion DETECTOR Photocell CIRCUIT DIAGRAM PIR SENSOR IS MOTION SENSOR motion DETECTOR light CIRCUIT DIAGRAM Z8FS040ASB20SG motion DETECTOR block DIAGRAM pir motion sensor MOTION DETECTOR
Contextual Info: ZEPIR0AAS01SBCG ePIR Motion Detection Zdots SBC Product Specification PS028402-1008 Copyright 2008 by Zilog®, Inc. All rights reserved. www.zilog.com ePIR™ Motion Detection Zdots® SBC Product Specification Warning: DO NOT USE IN LIFE SUPPORT LIFE SUPPORT POLICY

car reverse horn

Abstract: 4304 mosfet IN4003 diode p-n junction diode IN4001 CAR HORN Specification pizoelectric SENSOR DOOR BELL diode in4003 circuit alarm car work backup horn
Contextual Info: Recognized Components o f U ^ e rw rite rs ^ a B o ra to rie s ^ ftfT ' ~ D 4301«4302«43<! 3*4304 CMOS/LSI DETECTOR/TIMER CIRCUITS 79 F E B . FEATURES: •O P T IO N A L INPUT IM PEDANCE 1 0 1 2 « -1 0 1 5 « ) •C U R R E N T D R A IN LESS T H A N 20)JA A T 9V