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    3 W RF POWER TRANSISTOR NPN Search Results

    3 W RF POWER TRANSISTOR NPN Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MX0912B251Y
    		Rochester Electronics LLC NPN microwave power transistor Visit Rochester Electronics LLC Buy
    RX1214B130YI
    		Rochester Electronics LLC NPN microwave power transistor Visit Rochester Electronics LLC Buy
    RZ1214B35YI
    		Rochester Electronics LLC NPN microwave power transistor Visit Rochester Electronics LLC Buy
    MX0912B351Y
    		Rochester Electronics LLC MX0912B351Y - NPN Silicon RF Power Transistor Visit Rochester Electronics LLC Buy
    2SC6026MFV
    		Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation

    3 W RF POWER TRANSISTOR NPN Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    NESG260234

    Abstract: LLQ2021 NESG260234-T1 NESG260234-T1-AZ
    Contextual Info: NPN SILICON GERMANIUM RF TRANSISTOR NESG260234 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 1 W 3-PIN POWER MINIMOLD (34 PKG) FEATURES • This product is suitable for medium output power (1 W) amplification Pout = 30 dBm TYP. @ VCE = 6 V, Pin = 15 dBm, f = 460 MHz


    Original     		NESG260234 NESG260234-AZ NESG260234-T1 NESG260234 LLQ2021 NESG260234-T1 NESG260234-T1-AZ PDF

    NESG270034

    Abstract: ic nec 2501 nec 2012 nec 2501 NESG270034-AZ NESG270034-T1 NESG270034-T1-AZ 2012 NEC
    Contextual Info: NPN SILICON GERMANIUM RF TRANSISTOR NESG270034 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 2 W 3-PIN POWER MINIMOLD (34 PKG) FEATURES • This product is suitable for medium output power (2 W) amplification Pout = 33.5 dBm TYP. @ VCE = 6 V, Pin = 20 dBm, f = 460 MHz


    Original     		NESG270034 NESG270034-AZ NESG270034-T1 NESG270034-T1-AZ NESG270034 ic nec 2501 nec 2012 nec 2501 NESG270034-AZ NESG270034-T1 NESG270034-T1-AZ 2012 NEC PDF

    1005 Ic Data

    Abstract: NESG260234 IC MARKING 1005 1005 TRANSISTOR
    Contextual Info: NPN SILICON GERMANIUM RF TRANSISTOR NESG260234 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 1 W 3-PIN POWER MINIMOLD (34 PKG) FEATURES • This product is suitable for medium output power (1 W) amplification Pout = 30 dBm TYP. @ VCE = 6 V, Pin = 15 dBm, f = 460 MHz


    Original     		NESG260234 NESG260234 NESG260234-AZ NESG260234-T1 NESG260234-T1-AZ PU10547EJ02V0DS LLQ2021 1005 Ic Data IC MARKING 1005 1005 TRANSISTOR PDF

    1005 Ic Data

    Abstract: NESG270034
    Contextual Info: NPN SILICON GERMANIUM RF TRANSISTOR NESG270034 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 2 W 3-PIN POWER MINIMOLD (34 PKG) FEATURES • This product is suitable for medium output power (2 W) amplification Pout = 33.5 dBm TYP. @ VCE = 6 V, Pin = 20 dBm, f = 460 MHz


    Original     		NESG270034 NESG270034 NESG270034-AZ NESG270034-T1 NESG270034-T1-AZ PU10577EJ02V0DS 1005 Ic Data PDF

    nec 2012

    Abstract: NESG270034 2012 NEC PU10577EJ01V0DS nec 2501 NESG270034-AZ NESG270034-T1 NESG270034-T1-AZ
    Contextual Info: NPN SILICON GERMANIUM RF TRANSISTOR NESG270034 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 2 W 3-PIN POWER MINIMOLD (34 PKG) FEATURES • This product is suitable for medium output power (2 W) amplification Pout = 33.5 dBm TYP. @ VCE = 6 V, Pin = 20 dBm, f = 460 MHz


    Original     		NESG270034 NESG270034-AZ NESG270034-T1 NESG270034-T1-AZ nec 2012 NESG270034 2012 NEC PU10577EJ01V0DS nec 2501 NESG270034-AZ NESG270034-T1 NESG270034-T1-AZ PDF

    MRF449

    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line 30 W - 3 0 MHz RF POWER TRANSISTOR NPN SILICON RF POWER TRANSISTOR N P N S IL IC O N . . . designed fo r power am plifier application in industrial, com ­ mercial and amateur radio equipment to 30 MHz. •


    OCR Scan     		PDF

    nec 2501

    Abstract: 2501 NEC ic nec 2501 NESG260234
    Contextual Info: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG260234 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 1 W 3-PIN POWER MINIMOLD (34 PKG) FEATURES • This product is suitable for medium output power (1 W) amplification PO = 30 dBm TYP. @ VCE = 6 V, Pin = 15 dBm, f = 460 MHz


    Original     		NESG260234 NESG260234 NESG260234-AZ NESG260234-T1 NESG260234-T1-AZ nec 2501 2501 NEC ic nec 2501 PDF

    NESG260234

    Abstract: LLQ2021 NESG260234-T1 NESG260234-T1-AZ
    Contextual Info: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG260234 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 1 W 3-PIN POWER MINIMOLD (34 PKG) FEATURES • This product is suitable for medium output power (1 W) amplification Pout = 30 dBm TYP. @ VCE = 6 V, Pin = 15 dBm, f = 460 MHz


    Original     		NESG260234 NESG260234-AZ NESG260234-T1 NESG260234 LLQ2021 NESG260234-T1 NESG260234-T1-AZ PDF

    ic nec 2501

    Abstract: NESG270034 NESG270034-T1 nec 2012 nec 2501 NESG270034-AZ NESG270034-T1-AZ IC MARKING 1005 5 pin nec microwave marking NEC rf transistor
    Contextual Info: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG270034 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 2 W 3-PIN POWER MINIMOLD (34 PKG) FEATURES • This product is suitable for medium output power (2 W) amplification Pout = 33.5 dBm TYP. @ VCE = 6 V, Pin = 20 dBm, f = 460 MHz


    Original     		NESG270034 NESG270034-AZ NESG270034-T1 NESG270034-T1-AZ ic nec 2501 NESG270034 NESG270034-T1 nec 2012 nec 2501 NESG270034-AZ NESG270034-T1-AZ IC MARKING 1005 5 pin nec microwave marking NEC rf transistor PDF

    nec 2501

    Abstract: marking NEC rf transistor ic nec 2501 PU10577EJ01V0DS nec 2012 2501 NEC NESG270034 nec npn rf 15 w RF POWER TRANSISTOR NPN
    Contextual Info: PRELIMINARY DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG270034 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 2 W 3-PIN POWER MINIMOLD (34 PKG) FEATURES • This product is suitable for medium output power (2 W) amplification Pout = 33.5 dBm TYP. @ VCE = 6 V, Pin = 20 dBm, f = 460 MHz


    Original     		NESG270034 NESG270034 NESG270034-AZ NESG270034-T1 NESG270034-T1-AZ nec 2501 marking NEC rf transistor ic nec 2501 PU10577EJ01V0DS nec 2012 2501 NEC nec npn rf 15 w RF POWER TRANSISTOR NPN PDF

    TIC 136 Transistor

    Abstract: mrf412
    Contextual Info: MOTOROLA SC ÎXSTRS/R "flT ]>F|k3l.72Si| 007flT71 5 FJ 89D 78971 6 3 6 7 2 5 4 M O T O R O L A SC XSTRS/R F t MOTOROLA - 3 D 3 SEMICONDUCTOR TECHNICAL DATA MRF412 The RF Line 70 W (PEP) — 30 MHz NPN SILICON RF POWER TRANSISTOR RF POWER TRANSISTOR . . . designed primarily for applications as a high-power amplifier


    OCR Scan     		007flT71 MRF412 TIC 136 Transistor mrf412 PDF

    MRF477

    Abstract: MRF477 equivalent mrf477 transistor 2 SC 2673 Q 1N4719 transistor MRF477 1S75 221A-04 RF POWER TRANSISTOR NPN 1270H
    Contextual Info: MOTOROLA SC XSTRS/R F 4bE D L3ti72Sl4 □D'mb'iE 4 MOTOROLA MOTb T -S 3 -/Í SEMICONDUCTOR TECHNICAL DATA MRF477 T h e R F L in e 40 W (PEP) - 3 0 MHz RF POWER TRANSISTOR NPN SILICON RF POWER TRANSISTOR NPN SILIC ON . . . designed prim arily for application as a high-power linear


    OCR Scan     		fci3ti72S4 MRF477 T0-220AB L3b72S4 T-33-11 Pout-40WPEP MRF477 MRF477 equivalent mrf477 transistor 2 SC 2673 Q 1N4719 transistor MRF477 1S75 221A-04 RF POWER TRANSISTOR NPN 1270H PDF

    MRF227

    Abstract: MRF227 equivalent 420 NPN Silicon RF Transistor transistor 7905 J 420 G
    Contextual Info: MOTOROLA SC XSTRS/R F 4bE D b3b72S4 0£m 50fl 7 MOTOROLA SEM ICO NDUCTOR TECHNICAL DATA MRF227 The RF Line 3 W - 225 MHz R F POWER TRANSISTOR NPN SILIC ON NPN SILICON RF POWER TRANSISTOR . . . designed for 12.5 Volt large-signal power amplifier applica­


    OCR Scan     		b3b72S4 MRF227 T0-206A O-391 MRF227 MRF227 equivalent 420 NPN Silicon RF Transistor transistor 7905 J 420 G PDF

    ASI10539

    Abstract: ASI3003 147 B transistor
    Contextual Info: ASI3003 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .250 2L FLG The ASI 3003 is a common base transistor capable of providing 3.0 W Class-C RF output power @ 3.0 GHz. A ØD B .060 x 45° CHAMFER C E FEATURES: G • PG = 6.0 dB min. at 3 W / 3,000 MHz


    Original     		ASI3003 ASI10539 ASI3003 147 B transistor PDF

    9915 transistor

    Abstract: motorola rf Power Transistor beads ferroxcube 2204B IN4997 MRF412 qs-90
    Contextual Info: MOTOROLA SC ÌXSTRS/R FJ AT DE |b 3L72 SM DD7flT71 5 890 78971 & 3 6 7 2 S 4 M O T O R O L A SC CXSTRS/R F T ' 33 ' 5 MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF412 The RF Line 7 0 W (P E P ) — 3 0 M H z NPN SILICON RF POWER TRANSISTOR RF POWER TRANSISTOR


    OCR Scan     		D07flT71 MRF412 -136V T-33-IS 9915 transistor motorola rf Power Transistor beads ferroxcube 2204B IN4997 MRF412 qs-90 PDF

    pepi c

    Abstract: TRANSISTOR D 2627 pepi cr MRF427 transistor D 2624 arco 469 trimmer capacitor arco TRIMMER capacitor 463 s49 transistor pepi TRIMMER capacitor 469
    Contextual Info: MOTOROLA SC XSTRS/R 4bE F D m b3b7254 00T4b4b ô T - 3 3 "O S MOTOROLA SEM ICONDUCTOR MRF427 MRF427A TECHNICAL DATA The RF Line 25 W ( P E P ) - 3 0 MHz RF POWER TRANSISTOR NPN SILICON RF POWER TRANSISTOR NPN S IL IC O N . . . designed p r im a r ily fo r hig h -v o lta g e a p p lic a tio n s as a h ig h -p o w e r


    OCR Scan     		b3b7254 00T4b4b T-33-cR MRF427 MRF427A MRF427, T-33-09 pepi c TRANSISTOR D 2627 pepi cr transistor D 2624 arco 469 trimmer capacitor arco TRIMMER capacitor 463 s49 transistor pepi TRIMMER capacitor 469 PDF

    pepi c

    Abstract: MRF426
    Contextual Info: MOTOROLA SEM ICO NDUCTOR TECHNICAL DATA MRF426 The RF Line 25 W PEPI - 3 0 M H z RF POWER TRANSISTOR N P N S IL IC O N NPN SILICO N RF POWER TRANSISTOR . . .designed for high gain driver and o u tp u t linear am plifier stages in 1.5 to 3 0 M H z H F /S S B equipm ent.


    OCR Scan     		MRF426 pepi c MRF426 PDF

    MRF317

    Abstract: transistor MRF317
    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor . . . designed prim arily for w ideband large-signal output am plifier stages in 3 0 -2 0 0 MHz frequency range. • • Guaranteed Performance at 150 MHz, 28 Vdc Output Power = 100 W


    OCR Scan     		Carrier/120 MRF317 transistor MRF317 PDF

    MRF262

    Abstract: MRF261 MRF260 MRF262 equivalent MRF264 J243 BH Rf transistor motorola rf Power Transistor TIC 136 Transistor motorola rf device
    Contextual Info: I MOTOROLA SC XSTRS/R F 4 bE b3b?554 00^4541 5 D MOTOROLA -T-33» SEMICONDUCTOR TECHNICAL DATA -cn MRF261 The RF Line 10 W 1 3 6 -1 7 5 M Hz NPN SILICON RF POWER TRANSISTOR RF POWER TRANSISTOR . . . desig n ed fo r 12.5 V o lt VHF large-signal p o w e r a m p lifie r a p p li­


    OCR Scan     		MRF261 O-220AB MRF260 MRF262 MRF264 OOT4544 T-33-07 MRF261 MRF262 equivalent J243 BH Rf transistor motorola rf Power Transistor TIC 136 Transistor motorola rf device PDF

    MRF458

    Abstract: MRF458 motorola MRF458A 79023 79024 1N4997 56-590-65/3B VK200 W-30 transistor s46
    Contextual Info: MOTOROL A sc -c xstrs / r f AT > DE | b B t i 7 a S 4 89D 79021 6 3 6 7 2 5 4 MOTOROLA SC <XSTRS/R F DOTTDSl D “T - 3 3 - / 5 MOTOROLA • SEM ICONDUCTOR MRF458 MRF458A TECHNICAL DATA T h e R F L in e 80 W - 3 0 MHz RF POWER TRANSISTOR NPN SILICON RF POWER TRANSISTOR


    OCR Scan     		MRF458, MRF458A 007TD24 DT-33 MRF458 MRF458 motorola MRF458A 79023 79024 1N4997 56-590-65/3B VK200 W-30 transistor s46 PDF

    MRF421MP

    Abstract: MRF-421MP MRF421 transistor tic 698
    Contextual Info: MOTOROLA SEMICONDUCTOR MRF421 MRF421MP TECHNICAL DATA The RF Line 100 W PEP - 3 0 MHz RF POWER TRANSISTORS NPN SILIC O N NPN SILICO N RF POWER TRANSISTOR . . . designed prim arily for application as a high-power linear ampli­ fier from 2.0 to 30 MHz. Specified 1 2.5 V o lt, 30 MHz Characteristics Output Power = 100 W (PEP)


    OCR Scan     		MRF421 MRF421MP MRF421, MRF421MP MRF-421MP transistor tic 698 PDF

    MRF604

    Abstract: MRF-604 MM531
    Contextual Info: MOTOROLA SC XSTRS/R F MbE D b3b?2SM 00^4004 MOTOROLA G T -3 -ä -c e . • SEMICONDUCTOR TECHNICAL DATA MRF604 The R F Line 1.0 W - 175 M H z NPN SILICON RF POWER TRANSISTOR RF POWER TRANSISTOR NPN SILICON . . . designed for 12.5 Volt VH F large-signal amplifier applications


    OCR Scan     		MRF604 175MHz) MRF604 MRF-604 MM531 PDF

    3B2S

    Abstract: MRF428
    Contextual Info: M O T OR O L A SC XSTRS/R 4bE D F L,3b72S4 OOmbSD T MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF428 The RF Line 150 W (PEP) - 3 0 MHz RF POWER TRANSISTOR NPN S IL IC O N NPN SILICO N R F POWER TRANSISTOR . . . designed prim arily fo r high-voltage applications as a high-power


    OCR Scan     		3b72S4 MRF428 T--33--13 3B2S MRF428 PDF

    transistor 7905

    Contextual Info: MOTOROLA SC XSTRS/R 4bE F D • b3b?2S4 00=14326 2 « flO T b -r-3 2 > " 0 = > MOTOROLA ■ SEM ICONDUCTOR TECHNICAL DATA T h e R F L in e 4 W — 175 MHz NPN SILICON RF POWER TRANSISTOR RF POWER TRANSISTOR . . . designed for 12.5 V olt large-signal power amplifier applications


    OCR Scan     		PDF