30 MOHM Search Results

Contextual Info: VMI-U Bauform / Size : 0805 ISA-PLAN - SMD Präzisionswiderstände / SMD precision resistors Technische Daten / technical data Widerstandswerte Resistance values 10, 30, 50, 100 mOhm Toleranz Tolerance 5% Temperaturkoeffizient Temperature coefficient < 30 ppm/K 20 °C - 60 °C

040254

Abstract: 254H
Contextual Info: MATERIAL AND FINISH Insulator: PBT, 30% glass fiber, UL 94V-0 rated. Pin contact: Brass, plating see table . ELECTRICAL SPECIFICATIONS: Rated current: 1A Insulation resistance: 1000 Mohm @ 500VDC Dielectric withstanding voltage: 500VAC for one minute Contact resistance: 30 mohm max @ 100mA DC

scr driver dc motor speed control

Abstract: scr speed control dc motor scr driving circuit for dc motor ac-dc voltage regulator using SCR DIG-12-08-30 ac motor speed control with scr DIG-11-8-30-DD DIG-12-08-30-DD DIG-22-8-30-DD photovoltaic mosfet driver
Contextual Info: DIONICS, INC. Phone: 516 997-7474 Fax: (516) 997-7479 Website: www.dionics-usa.com 65 Rushmore Street Westbury, NY 11590 DIG-11-8-30-DD; DIG-12-08-30-DD; DIG-22-8-30-DD Photovoltaic MOSFET Drivers With Dynamic Discharge* *US Patent 4,931,656 Applications:

Contextual Info: DIONICS, INC. Phone: 516 997-7474 Fax: (516) 997-7479 Website: www.dionics-usa.com 65 Rushmore Street Westbury, NY 11590 DIG-11-8-30-DD; DIG-12-8-30-DD; DIG-22-8-30-DD Photovoltaic MOSFET Drivers With Dynamic Discharge* *US Patent 4,931,656 Applications:

Contextual Info: 6.60 5.08 CD CM Lll Dd Specification: 5A, 120V AV or 28V DC 2A, 250V AC 10mOhm max. Contact resistance: Electrical life: 30 000 operations at full load Insulation resistance: 1000 MOhm min. Dielectric strength: 1000V RMS Operating temperature: -30°C to +85°C

"Isolation Amplifiers"

Abstract: DIG-12-08-30 IR LED infrared led photovoltaic MOSFET driver DIG-11-8-30-DD DIG-12-08-30-DD DIG-12-8-30-DD DIG-22-8-30-DD
Contextual Info: DIONICS, INC. Phone: 516 997-7474 Fax: (516) 997-7479 Website: www.dionics-usa.com 65 Rushmore Street Westbury, NY 11590 DIG-11-8-30-DD; DIG-12-08-30-DD; DIG-22-8-30-DD Photovoltaic MOSFET Drivers With Dynamic Discharge* *US Patent 4,931,656 Applications:

DIG-12-08-30

Abstract: DIG-11-8-30-DD DIG-12-08-30-DD DIG-12-8-30-DD DIG-22-8-30-DD 8-30-DD
Contextual Info: DIONICS, INC. Phone: 516 997-7474 Fax: (516) 997-7479 Website: www.dionics- usa.com 65 Rushmore Street Westbury, NY 11590 DIG-11-8-30-DD; DIG-12-08-30-DD; DIG-22-8-30-DD Photovoltaic MOSFET Drivers With Dynamic Discharge* *US Patent 4,931,656 Features: Ø

DIG-11-8-30-DD

Abstract: DIG11-8-30DD DIG-12-8-30-DD DIG-22-8-30-DD 10PA
Contextual Info: DIONICS, INC. Phone: 516 997-7474 Fax: (516) 997-7479 Website: www.dionics-usa.com 65 Rushmore Street Westbury, NY 11590 DIG-11-8-30-DD; DIG-12-8-30-DD; DIG-22-8-30-DD Photovoltaic MOSFET Drivers With Dynamic Discharge* *US Patent 4,931,656 Applications:

DIG-11-8-30-DD

Abstract: DIG-12-8-30-DD DIG-22-8-30-DD LM129 4 pin SCR gate drive circuit
Contextual Info: DIONICS, INC. Phone: 516 997-7474 Fax: (516) 997-7479 Website: www.dionics-usa.com 65 Rushmore Street Westbury, NY 11590 DIG-11-8-30-DD; DIG-12-8-30-DD; DIG-22-8-30-DD Photovoltaic MOSFET Drivers With Dynamic Discharge* *US Patent 4,931,656 Applications:

850C

Abstract: DIG-11-8-30-DD DIG-12-8-30-DD DIG-22-8-30-DD the light activated scr 11830
Contextual Info: DIONICS, INC. Phone: 516 997-7474 Fax: (516) 997-7479 Website: www.dionics-usa.com 65 Rushmore Street Westbury, NY 11590 DIG-11-8-30-DD DIG-12-8-30-DD DIG-22-8-30-DD Photovoltaic MOSFET Drivers With Dynamic Discharge* *US Patent 4,931,656 Applications: Features:

Contextual Info: 6 5 4 APPROVED: D A T E :_ TITLE: Pin Pin 199 SPECIFICATIONS: Material: Body: H i-tem p thermoplastic, rated UL 9 4 V -0 Contacts: Copper Alloy, Gold plated. Electrical: Operating voltage: 30 VAC max Current rating: 1 Amps max Contact resistance: 30 mohms Max.

Contextual Info: Amphenol CDMA Female Power type+cover 1.Material: Housing: Black LCP,30~40% GF, UL94V-0 COVER : Black PBT,30% Gf,UL94V-0 2.Finish : N/A 3.Electrical specifications: Voltage rating : 60V rms Withstanding voltage : 500V rms Current rating: 20A per contact Insulation resistance : >5000 Mohms

Contextual Info: DIONICS, INC. Phone: 516 997-7474 Fax: (516) 997-7479 Website: www.dionics-usa.com 65 Rushmore Street Westbury, NY 11590 DIG-11-8-30-DD DIG-12-8-30-DD DIG-22-8-30-DD Photovoltaic MOSFET Drivers With Dynamic Discharge* *US Patent 4,931,656 Features: Ø Ø

mosfet power totem pole CIRCUIT

Abstract: 850C DIG-11-8-30-DD DIG-12-8-30-DD DIG-22-8-30-DD
Contextual Info: DIONICS, INC. Phone: 516 997-7474 Fax: (516) 997-7479 Website: www.dionics-usa.com 65 Rushmore Street Westbury, NY 11590 DIG-11-8-30-DD DIG-12-8-30-DD DIG-22-8-30-DD Photovoltaic MOSFET Drivers With Dynamic Discharge* *US Patent 4,931,656 Features: Ø Ø

Contextual Info: STRH40N6 Rad-Hard N-channel 60 V, 30 A Power MOSFET Datasheet - production data Features VBDSS ID RDS on Qg 60 V 30 A 36 mOhm 43 nC • Fast switching • 100% avalanche tested • Hermetic package • 70 krad TID • SEE radiation hardened SMD.5 Applications

Contextual Info: STRH40N6 Rad-Hard N-channel 60 V, 30 A Power MOSFET Datasheet - production data Features VBDSS ID RDS on Qg 60 V 30 A 36 mOhm 43 nC • Fast switching • 100% avalanche tested • Hermetic package • 70 krad TID • SEE radiation hardened SMD.5 Applications

Contextual Info: No. of Pos. 10 14 16 20 24 26 30 34 40 50 60 64 MATERIAL AND FINISH Insulator: PBT 30% glass fiber, UL 94V-0 rated, color black Pin contact: Phosphor Bronze, plating see chart over Nickel ELECTRICAL SPECIFICATIONS: Rated current: 3A Insulation resistance: 1000 Mohm @ 500 VDC

Contextual Info: STRH40N6 Rad-Hard N-channel 60 V, 30 A Power MOSFET Datasheet - production data Features VBDSS ID RDS on Qg 60 V 30 A 36 mOhm 43 nC • Fast switching • 100% avalanche tested • Hermetic package • 70 krad TID • SEE radiation hardened SMD.5 Applications

RAD SMD MARKING CODE

Abstract: smd diode marking code TO3
Contextual Info: STRH40N6 Rad-Hard N-channel 60 V, 30 A Power MOSFET Datasheet - production data Features VBDSS ID RDS on Qg 60 V 30 A 36 mOhm 43 nC • Fast switching • 100% avalanche tested • Hermetic package • 70 krad TID • SEE radiation hardened SMD.5 Applications

MILITARY QUALIFIED DIP SWITCHES

Abstract: EIA RS-448-2 specifications EIA rs 448 RS-448-2
Contextual Info: Thru-Hole DIP Switches SPECIFICATIONS: Standard and Military Qualified Styles Ratings 78 90B 20,000 20,000 5,000 Make-and-break Current Rating: Operations per switch position at these resistive loads 1 mA, 5 Vdc; 50 mA, 30 Vdc; or 150 mA, 30 Vdc: 10 mA, 30 Vdc; or 10 mA, 50 mVdc:

LA5511P

Abstract: 216-0774007 BD82PM55 LA-5511P BCM57780 ATI 216-0728014 MX25L3205DM2I ATI M96 tps51125 2160728014
Contextual Info: A B C D E 1 1 Compal Confidential 2 2 NCQD0 M/B Schematics Document Intel Arrandale/Clarksfield Processor with DDRIII + Ibex Peak-M 2009-09-30 3 3 REV:2.0 4 4 2009/09/30 Issued Date Compal Electronics, Inc. Compal Secret Data Security Classification 2010/09/30

HV33010

Contextual Info: STRH40N6 Rad-Hard P-channel 100 V, 30 A Power MOSFET Features VBDSS ID RDS on Qg 60 V 30 A 36 mOhm 43 nC • Fast switching ■ 100% avalanche tested ■ Hermetic package ■ 70 krad TID ■ SEE radiation hardened SMD.5 Applications ■ Satellite ■ High reliability

STRH40N6SG

Contextual Info: STRH40N6 Rad-Hard P-channel 60 V, 30 A Power MOSFET Datasheet — production data Features VBDSS ID RDS on Qg 60 V 30 A 36 mOhm 43 nC • Fast switching ■ 100% avalanche tested ■ Hermetic package ■ 70 krad TID ■ SEE radiation hardened SMD.5 Applications

st smd diode marking to3

Contextual Info: STRH40N6 Rad-Hard P-channel 100 V, 30 A Power MOSFET Preliminary data Features VBDSS ID RDS on Qg 60 V 30 A 36 mOhm 43 nC • Fast switching ■ 100% avalanche tested ■ Hermetic package ■ 70 krad TID ■ SEE radiation hardened SMD.5 Applications ■ Satellite