30 W RF POWER TRANSISTOR NPN Search Results

Motorola transistors MRF455

Contextual Info: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor . . . designed for power amplifier applications in industrial, commercial and amateur radio equipment to 30 MHz. • 60 W, 30 MHz RF POWER TRANSISTOR NPN SILICON Specified 12.5 Volt, 30 MHz Characteristics —

MRF449

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line 30 W - 3 0 MHz RF POWER TRANSISTOR NPN SILICON RF POWER TRANSISTOR N P N S IL IC O N . . . designed fo r power am plifier application in industrial, com ­ mercial and amateur radio equipment to 30 MHz. •

MRF454 motorola

Abstract: ferroxcube 56-590-65 56590653B
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF454 NPN Silicon RF Power TVansistor . . . designed for power am plifier applications in industrial, commercial and am ateur radio equipment to 30 MHz. • 80 W, 30 MHz RF POWER TRANSISTOR NPN SILICON Specified 12.5 Volt, 30 MHz Characteristics —

MRF422

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF422 Designed primarily for applications as a high -po w er linear am plifier from 2.0 to 30 MHz. • Specified 28 Volt, 30 MHz Characteristics — Output Power = 150 W PEP

inductor vk200

Abstract: VK200 INDUCTOR MRF238 VK200-4B VK200 4B inductor vk200 rf choke rasistor marine radio 02CM arco trimmer
Contextual Info: i MRF238 MOTOROLA Advance Information 30 W — 160 MHz The RF Line RF POWER TRANSISTOR NPN SILICON NPN SILICON RF POWER TRANSISTOR . . . designed for 13.6 Volt VHF large»signal amplifier applications in industrial and commercial FM equipment operating to 175 MHz.

BD135

Abstract: BD136 MJD47 MRF20030 RF NPN POWER TRANSISTOR C 2 WATT 2 GHZ MOTOROLA 727
Contextual Info: MOTOROLA Order this document by MRF20030/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron Bipolar Line MRF20030 RF Power Bipolar Transistor 30 W, 2.0 GHz NPN SILICON BROADBAND RF POWER TRANSISTOR • Specified 26 Volts, 2.0 GHz, Class AB, Two–Tones Characteristics

MRF421 equivalent

Abstract: mrf421
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF421 The RF Line NPN Silicon RF Power Transistor . . . designed primarily for application as a high-power linear amplifier from 2.0 to 30 MHz. • Specified 12.5 Volt, 30 MHz Characteristics — Output Power = 100 W PEP

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF422 The RF Line NPN Silicon RF Power Transistor . . . designed primarily for applications as a high-power linear amplifier from 2.0 to 30 MHz. • Specified 28 Volt, 30 MHz Characteristics — Output Power = 150 W PEP

NESG260234

Abstract: LLQ2021 NESG260234-T1 NESG260234-T1-AZ
Contextual Info: NPN SILICON GERMANIUM RF TRANSISTOR NESG260234 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 1 W 3-PIN POWER MINIMOLD (34 PKG) FEATURES • This product is suitable for medium output power (1 W) amplification Pout = 30 dBm TYP. @ VCE = 6 V, Pin = 15 dBm, f = 460 MHz

1005 Ic Data

Abstract: NESG260234 IC MARKING 1005 1005 TRANSISTOR
Contextual Info: NPN SILICON GERMANIUM RF TRANSISTOR NESG260234 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 1 W 3-PIN POWER MINIMOLD (34 PKG) FEATURES • This product is suitable for medium output power (1 W) amplification Pout = 30 dBm TYP. @ VCE = 6 V, Pin = 15 dBm, f = 460 MHz

nec 2501

Abstract: 2501 NEC ic nec 2501 NESG260234
Contextual Info: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG260234 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 1 W 3-PIN POWER MINIMOLD (34 PKG) FEATURES • This product is suitable for medium output power (1 W) amplification PO = 30 dBm TYP. @ VCE = 6 V, Pin = 15 dBm, f = 460 MHz

NESG260234

Abstract: LLQ2021 NESG260234-T1 NESG260234-T1-AZ
Contextual Info: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG260234 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 1 W 3-PIN POWER MINIMOLD (34 PKG) FEATURES • This product is suitable for medium output power (1 W) amplification Pout = 30 dBm TYP. @ VCE = 6 V, Pin = 15 dBm, f = 460 MHz

MRF421MP

Abstract: MRF-421MP MRF421 transistor tic 698
Contextual Info: MOTOROLA SEMICONDUCTOR MRF421 MRF421MP TECHNICAL DATA The RF Line 100 W PEP - 3 0 MHz RF POWER TRANSISTORS NPN SILIC O N NPN SILICO N RF POWER TRANSISTOR . . . designed prim arily for application as a high-power linear ampli­ fier from 2.0 to 30 MHz. Specified 1 2.5 V o lt, 30 MHz Characteristics Output Power = 100 W (PEP)

MRF422

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF422 Designed primarily for applications as a high-power linear amplifier from 2.0 to 30 MHz. • Specified 28 Volt, 30 MHz Characteristics — Output Power = 150 W PEP Minimum Gain = 10 dB

2443 MOTOROLA transistor

Abstract: High-Power NPN Silicon Power Transistor
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor Designed primarily for application as a high-power linear amplifier from 2.0 to 30 MHz. • Specified 12.5 Volt, 30 MHz Characteristics — Output Power = 100 W PEP Minimum Gain = 10 dB

MRF464

Abstract: micrometals T37 toroid micrometals T37 High-Power NPN Silicon Power Transistor mobile rf power amplifier transistor
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF464 NPN Silicon RF Power Transistor . . . designed primarily for applications as a high-power linear amplifier from 2.0 to 30 MHz, in single sideband mobile, marine and base station equipment. • 80 W PEP , 30 MHz

MRF422

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor Designed primarily for applications as a high-power linear amplifier from 2.0 to 30 MHz. • Specified 28 Volt, 30 MHz Characteristics — Output Power = 150 W PEP Minimum Gain = 10 dB

CQ 20.000

Abstract: MRF421 equivalent MRF421 1N4997
Contextual Info: M í ir l\ z i MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor Designed primarily for application as a high-power linear amplifier from 2.0 to 30 MHz. • Specified 12.5 Volt, 30 MHz Characteristics — Output Power = 100 W PEP

CASE-211-11 MRF421

Abstract: adc 809 MRF421 equivalent ferroxcube ferrite beads mallory 150 series 1N4997 MRF421
Contextual Info: Order this document by MRF421/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF421 Designed primarily for application as a high–power linear amplifier from 2.0 to 30 MHz. • Specified 12.5 Volt, 30 MHz Characteristics — Output Power = 100 W PEP

allen bradley CB series

Abstract: "class AB Linear" hf CB allen bradley
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF426 . . . designed for high gain driver and output linear am plifier stages in 1.5 to 30 MHz HF/SSB equipment. • • Specified 28 Volt, 30 MHz Characteristics — Output Power = 25 W PEP

adc 809

Abstract: ferroxcube ferrite beads CASE-211-11 MRF422 ferroxcube data sheet for ferrite beads mallory 150 series 1N4997 MRF422
Contextual Info: Order this document by MRF422/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF422 Designed primarily for applications as a high–power linear amplifier from 2.0 to 30 MHz. • Specified 28 Volt, 30 MHz Characteristics — Output Power = 150 W PEP

MRF-393

Abstract: MRF393 equivalent transistor rf "30 mhz" AN 240 Motorola
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF393 The RF Line NPN Silicon Push-Pull RF Power Transistor . . designed primarily for wideband large-signal output and driver amplifier stages in the 30 to 500 MHz frequency range. 100 W, 30 to 500 MHz CONTROLLED ‘Q”

MRF69

Contextual Info: MOTOROLA m SEMICONDUCTOR TECHNICAL DATA 2N6985 The RF Line N PN S ilicon Push-Pull RF P o w er Transistor 125 WATTS. 30-400 MHz CONTROLLED "Q" BROADBAND PUSH-PULL RF POWER TRANSISTOR NPN SILICON . . . designed p rim a rily fo r w id e b a n d large-signal o u tp u t and

Contextual Info: M OTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor Designed prim arily for application as a high-pow er linear am plifier from 2.0 to 30 MHz. • Specified 12.5 Volt, 30 MHz Characteristics — Output Power = 100 W PEP Minim um Gain = 10 dB