smd diode UJ 64 A
Abstract: SLD3237VFR 20/SPL1550-10-9-PD SLD3237VF smd diode UM 08 smd diode UM RLCD-M66H-750 RLT905-30G SLD3236VF RLT6650GLI
Text: PRICE LIST 03/2015 Wiedner Hauptstrasse 76, Vienna, Austria EUR USD Tel: +43-1-586 52 430, Fax: +43-1-586 52 43 44 1,00 1,10182 office@roithner-laser.com, www.roithner-laser.com 2015-06-03 last update 2015-06-03 LASER DIODES - UV EUR USD 1-9 pcs. 1-9 pcs.
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RLU4116E,
RLT390-50CMG,
RLT395-50CMG,
RLT400-50CMG,
TH06-1W,
ATU61938489,
AT1212
AT3112
smd diode UJ 64 A
SLD3237VFR
20/SPL1550-10-9-PD
SLD3237VF
smd diode UM 08
smd diode UM
RLCD-M66H-750
RLT905-30G
SLD3236VF
RLT6650GLI
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Untitled
Abstract: No abstract text available
Text: Laser Diode LNCT28PF01WW Description 1 Package (2) LNCT28PF01WW is a MOCVD fabricated 660nm and 780nm band dual wavelength laser diode with multi quantum well structure, adapting open type frame package to reduce the size and weight. (3) Feature y Dual wavelength: 661 nm (typ) and 783 nm (typ)
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LNCT28PF01WW
LNCT28PF01WW
660nm
780nm
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Untitled
Abstract: No abstract text available
Text: Laser Diode LNCT22PK01WW Description Package 1 (2) LNCT22PK01WW is a MOCVD fabricated 660 nm and 780 nm band dual wavelength laser diode with multi quantum well structure, adapting open type frame package to reduce the size and weight. (3) Feature Dual wavelength: 661 nm (typ) and 785 nm (typ)
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LNCT22PK01WW
LNCT22PK01WW
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IR-Laser-Diode
Abstract: laser diode 30mw ir laser IR Laser diode 300 mw IR Laser Diode laser diode symbols 6 pin laser diode 2 pin ir DIODE US-Lasers
Text: US-Lasers: 850nm-30mW - IR LASER DIODE and IR DIODE LASER MODULE Page 1 of 2 US-Lasers: 850nm-30mW - Infrared Laser Diode and Infrared Diode Laser Module Back To Laser Modules TECHNICAL DATA for LASER MODULE Barrel Specs: z z z 3/8 - 56 Thread Size Dia: 10.4mm
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850nm-30mW
850nm
com/m850nm30m
IR-Laser-Diode
laser diode 30mw
ir laser
IR Laser diode
300 mw IR Laser Diode
laser diode symbols
6 pin laser diode
2 pin ir DIODE
US-Lasers
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EN 60825-1
Abstract: No abstract text available
Text: SPECDILAS IR series SPECDILAS IR-XXXX LASERS FOR INFRARED SPECTROSCOPY Single mode laser diode with double-hetero-structure for high resolution spectroscopy available for following wavenumbers: 1000 – 3400 cm-1 2.94 – 10 µm continuous operation (cw)
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Abstract: No abstract text available
Text: 808nm Laser Diode 808nm IR Laser Diode LCU80E041A-preliminary •Specifications 1 Device: Laser Diode (2) Structure: TO-5（ψ9.0mm ）,With Pb free glass cap, PD (3) Power Output: 500mW ■External dimensions(Unit : mm) ■Absolute Maximum Ratings(Tc=25℃)
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808nm
LCU80E041A-preliminary
500mW
lcu80e041a
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Abstract: No abstract text available
Text: Laser Diodes 850nm IR Laser Diode LCU85C051A-preliminary •Specifications 1 Device: (2) Structure: Laser Diode TO-18（ 5.6mm ),With Pb free glass cap, PD ■External dimensions(Unit : mm) ■Absolute Maximum Ratings(Tc=25℃) Parameter Symbols Optical Output
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850nm
LCU85C051A-preliminary
divers-vis/lcu/lcu85c051a
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Untitled
Abstract: No abstract text available
Text: Laser Diodes 830nm IR Laser Diode LCU83C051A-preliminary ϮSpecifications 1 Device: (2) Structure: Laser Diode TO-18ΰ 5.6mm ),With Pb free glass cap, PD ϮExternal dimensions(Unit : mm) ϮAbsolute Maximum Ratings(Tc=25к) Parameter Symbols Optical Output
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830nm
LCU83C051A-preliminary
divers-vis/lcu/lcu83c051a
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51214X
Abstract: Q62702-Pxxxx
Text: BIDITM Transceiver Optical Module 1300/1300 nm, Low Power SBL 51214X • • • • • • Designed for application in passive-optical networks Integrated beam splitter Bidirectional Transmission in one optical window Laser diode with Multi-Quantum Well structure
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51214X
1214A
Q62702-P3040
51214G
Q62702-Pxxxx
51214X
Q62702-Pxxxx
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Untitled
Abstract: No abstract text available
Text: Laser Diodes 850nm IR Laser Diode LCU85E051A-preliminary •Specifications 1 Device: (2) Structure: Laser Diode TO-18（ 5.6mm ),With Pb free glass cap, PD ■External dimensions(Unit : mm) ■Absolute Maximum Ratings(Tc=25℃) Parameter Symbols Optical Output
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850nm
LCU85E051A-preliminary
divers-vis/lcu/lcu85e051a
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LCU83E051A
Abstract: laser diodes 300 mW
Text: Laser Diodes 830nm IR Laser Diode LCU83E051A-preliminary ϮSpecifications 1 Device: (2) Structure: Laser Diode TO-18ΰ 5.6mm ),With Pb free glass cap, PD ϮExternal dimensions(Unit : mm) ϮAbsolute Maximum Ratings(Tc=25к) Parameter Symbols Optical Output
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830nm
LCU83E051A-preliminary
divers-vis/lcu/lcu83e051a
LCU83E051A
laser diodes 300 mW
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2 Wavelength Laser Diode
Abstract: p3004 Q62702-P3004 51007G
Text: STL 51007X 1300 nm Laser in Receptacle Package, Low Power • • • • Designed for application in fiber-optic networks Laser diode with Multi-Quantum Well structure Suitable for bit rates up to 1 Gbit/s Ternary photodiode at rear mirror for monitoring and
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51007X
51007G
Q62702-P3004
2 Wavelength Laser Diode
p3004
Q62702-P3004
51007G
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Untitled
Abstract: No abstract text available
Text: Laser Diodes 808nm IR Laser Diode LCU80C046D-preliminary •Specifications 1 Device: Laser Diode (2) Structure: TO-18（ψ5.6mm ）,With Pb free glass cap,no PD (3) Power Output: 300mW ■External dimensions(Unit : mm) ■Absolute Maximum Ratings(Tc=25℃)
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808nm
LCU80C046D-preliminary
300mW
divers-vis/lcu/lcu80c046d
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termistor 104
Abstract: 1w laser diode 830 nm M-247 SLD304XT-2 SLD304XT-21 SLD304XT-24 SLD304XT-25 SLD304XT-3 SLD304XT SLD304XT-1
Text: SLD304XT 1000mW High Power Laser Diode Description The SLD304XT is a gain-guided, high-power laser diode with a built-in TE cooler. A new flat, square package with a low thermal resistance and an in-line pin configuration is employed. Fine tuning of the wavelength is possible by controlling the laser chip temperature.
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SLD304XT
1000mW
SLD304XT
900mW
M-247
LO-10)
termistor 104
1w laser diode 830 nm
M-247
SLD304XT-2
SLD304XT-21
SLD304XT-24
SLD304XT-25
SLD304XT-3
SLD304XT-1
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808nm laser diode
Abstract: 808nm 500mw laser diode 808nm 500mw 808nm 300 mw laser diode u-ld-80 808nm laser diode 808nm 80E04
Text: U-LD-80E045A-preliminary UNION OPTRONICS CORP. 808nm Laser Diode 808nm IR Laser Diode U-LD-80E045A-preliminary •Specifications 1 Device: Laser Diode (2) Structure: TO-5（ψ9.0mm ）,With no glass cap, PD,easy decap (3) Power Output: 500mW ■External dimensions(Unit : mm)
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U-LD-80E045A-preliminary
808nm
500mW
808nm laser diode
808nm 500mw laser diode
808nm 500mw
808nm 300 mw laser diode
u-ld-80
laser diode 808nm
80E04
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Termistor
Abstract: 2 Wavelength Laser Diode termistor 104 1000mW laser 1w infrared led chip thermistor medical device high power laser laser diode 780 nm SLD304XT SLD304XT-1
Text: SLD304XT 1000mW High Power Laser Diode Description The SLD304XT allows independent thermal and electric design. This laser diode has a built-in TE Thermo Electric cooler. Equivalent Circuit Features • High power Recommended optical power output Po = 900mW
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SLD304XT
1000mW
SLD304XT
900mW
65MAX
M-273
LO-10)
Termistor
2 Wavelength Laser Diode
termistor 104
1000mW laser
1w infrared led
chip thermistor medical device
high power laser
laser diode 780 nm
SLD304XT-1
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808nm laser diode
Abstract: 808nm 808nm 500mw 300 mw IR Laser Diode 808nm 300 mw laser diode 808nm laser 820 nm laser diode 808 nm 1000 mw 808nm 500mw laser diode
Text: U-LD-80E041A-preliminary UNION OPTRONICS CORP. 808nm Laser Diode 808nm IR Laser Diode U-LD-80E041A-preliminary •Specifications 1 Device: Laser Diode (2) Structure: TO-5（ψ9.0mm ）,With Pb free glass cap, PD (3) Power Output: 500mW ■External dimensions(Unit : mm)
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U-LD-80E041A-preliminary
808nm
500mW
808nm laser diode
808nm 500mw
300 mw IR Laser Diode
808nm 300 mw laser diode
808nm laser
820 nm laser diode
808 nm 1000 mw
808nm 500mw laser diode
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p3055
Abstract: p3055 equivalent Q62702-P3054 Q62702-P3055 Q62702-P3057 Q62702-P3058 51005X 1300 nm Laser 40 mW
Text: 1300 nm Laser in Coaxial Package with SM-Pigtail, Low Power STL 51004X STL 51005X • • • • Designed for application in fiber-optic networks Laser diode with Multi-Quantum Well structure Suitable for bit rates up to 1 Gbit/s Ternary photodiode at rear mirror for monitoring and
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51004X
51005X
51004G
Q62702-P3058
1004A
Q62702-P3057
51005G
Q62702-P3055
1005A
Q62702-P3054
p3055
p3055 equivalent
Q62702-P3054
Q62702-P3055
Q62702-P3057
Q62702-P3058
51005X
1300 nm Laser 40 mW
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808nm 500mw laser diode
Abstract: No abstract text available
Text: 808nm Laser Diode 808nm IR Laser Diode LCU80E046D-preliminary •Specifications 1 Device: (2) Structure: (3) Power Output: Laser Diode TO-5（ 9.0mm ）,With Pb free glass cap, no PD 500mW ■External dimensions(Unit : mm) ■Absolute Maximum Ratings(Tc=25℃)
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808nm
LCU80E046D-preliminary
500mW
lcu80e046d
808nm 500mw laser diode
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STL 1550
Abstract: No abstract text available
Text: STL 81004X STL 81005X 1550 nm Laser in Coaxial Package with SM-Pigtail, Low Power • • • • Designed for application in fiber-optic networks Laser diode with Multi-Quantum Well structure Suitable for bit rates up to 1 Gbit/s Ternary photodiode at rear mirror for monitoring and
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81004X
81005X
81004H
Q62702-Pxxxx
1004A
81005H
1005A
STL 1550
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808nm 500mw
Abstract: 808 nm 1000 mw laser diode u-ld-80 808nm laser diode laser diode 808nm 808nm 500mw laser diode
Text: U-LD-80E046D-preliminary UNION OPTRONICS CORP. 808nm Laser Diode 808nm IR Laser Diode U-LD-80E046D-preliminary •Specifications 1 Device: Laser Diode (2) Structure: TO-5（ψ9.0mm ）,With Pb free glass cap, no PD, easy decap (3) Power Output: 500mW ■External dimensions(Unit : mm)
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U-LD-80E046D-preliminary
808nm
500mW
808nm 500mw
808 nm 1000 mw laser diode
u-ld-80
808nm laser diode
laser diode 808nm
808nm 500mw laser diode
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Untitled
Abstract: No abstract text available
Text: SLD304V SONY, lOOOmW High Power Laser Diode Description SLD304V are gain-guided, high-power laser diodes fabricated by MOCVD. MOCVD : Metal Organic Chemical Vapor Deposition Features • High power Recommended power output • Small operating current Package Outline
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SLD304V
SLD304V
900mW
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Untitled
Abstract: No abstract text available
Text: SLD304V SONY» lOOOmW High Power Laser Diode Description SLD304V are gain-guided, high-power laser diodes fabricated by MOCVD. MOCVD : Metal Organic Chemical Vapor Deposition Features • High power Recommended power output • Small operating current Package Outline
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SLD304V
SLD304V
900mW
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laser diode philips
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE S7D D • ^ 5 3 ^ 3 1 0DD1737 fl ■ / DEVELOPMENT DATA T-41-07 503CQF Thl$ data sheet contains advance in fo rm a tio n and specifications are subject t o change w ith o u t notice. BURIED HETEROJUNCTION InGaAsP LASER DIODE WITH SINGLE MODE FIBRE PIGTAIL
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0DD1737
T-41-07
503CQF
503CQF
laser diode philips
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