300FI Search Results

82C8167

Abstract: UM82C8167 UM82C8
Contextual Info: UMC UM82C8167 S S 2 S S S 2 S 2 Î Real-Time Clock RTC eatures Microprocessor compatible (8-bit data bus) Milliseconds through month counters 56 bits of RAM with comparator to compare the real time counter to the RAM data 2 IN TERRU PT OUTPUTS with 8 possible interrupt

Contextual Info: RECTIFIERS SES5601C SES5602C SES5603C High Efficiency, 25A Center-Tap FEATURES • Low Forward Voltage • Fast Switching Speed • Convenient Package • High Surge Capability • Low Thermal Resistance • Mechanically Rugged TO-3 Package • Available as Positive or Negative Center-Tap

Contextual Info: TN2535 I Ljà Supertex. inc. I l L J U U 254° W Lr Low Thresh old N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information b v dss/ ^DS ON ^GS(th) l[)(ON) b v dgs (max) (max) (min) 350V 12a 1.8V 400V 12Q 1.8 V Order Number / Package TO-243AA*

Contextual Info: 32-BIT CMOS ERROR DETECTION AND CORRECTION UNIT FEATURES: IDT49C460 IDT49C460A IDT49C460B IDT49C460C IDT49C460D IDT49C460E DESCRIPTION: • Fast Detect 10ns max. 12ns (max.) 16ns (max.) 25ns (max.) 30ns (max.) 40ns (max.) Correct 14ns (max.) 18ns (max.)

MOTOROLA POWER TRANSISTOR

Abstract: working of astable multivibrator circuit bipolar transistor tester mje13008 motorola AN1033 BASIC THERMAL MANAGEMENT OF POWER SEMICONDUCTORS Tektronix 7603 tester SCR DL111/D AN569
Contextual Info: by'ANI 083/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA AN1083 Basic Thermal Management of Power Semiconductors BY AL PSHAENICH MOTOROLA SEMICONDUCTOR PRODUCTS SECTOR Thermal management of power semiconductors is often overlooked by design engineers, either through oversight,

Contextual Info: te s SLOTTED OPTICAL SWITCH DPTDELECTROHICS CNY29 J 11 PACKAGE DIMENSIONS SYMBOL r-°T M ILLIM ETER S M IN. t r 3 - i* > r L b’ SECTIO N X - X T IN C H E S MIN. 10.7 11.0 .422 .433 A, 3.0 3.2 .119 .125 3.0 3.2 .119 .125 .024 .030 a 2 b, D D, d2 e2

ds132

Contextual Info: SOT89 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET BST86 FEATURES: PARTMARKING DETAIL - KO ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Drain-Source Voltage V DS VALUE 180 UNIT V Continuous Drain Current at Ta = 25°C •d 300 mA mA Pulse Drain Current taM

Contextual Info: =G 3 6 GEC P L E S S E Y [ s e m i c o n d u c t o r s NOVEMBER 1990 PRELIMINARY INFO RM A TIO N ! SL7953 SUBSCRIBER LINE INTERFACE CIRCUIT The SL7953 is a Subscriber Line Interface Circuit SLIC for use at the telephone exchange or PABX end of a telephone line.

2T931A

Abstract: KT853 2T926A KT838A 2T803A 2T809A 2T904A 2T808A 2T603 2T921A
Contextual Info: g V ì^ fg : W SflÉptÉ! W ^ i$ î0 i0 û * W I I m ^7ù£-à.S& m p ,-À-& s i: r& mSÊmÈÈ •ï ' ^ f§ W % a s Ü lg S I W M 7 \ w Jkw s i 4; h# » ik « W 'ï illl ¡ P * te ili -X\ S I Iw 11 4-S U E S T am Ir ¿ « 1 1 1 » , ü i a Î3 & & C nPA BO H H M K

A244D

Abstract: meuselwitz "halbleiterwerk frankfurt" VEB Kombinat zf filter A244 scans-048 halbleiterwerk Halbleiterwerk Frankfurt VEB Halbleiterwerk Frankfurt veb halbleiterwerk
Contextual Info: ìr 31H A 244 D Vorläufige technisch« Daten Integrierte A M -Em pfängerschaltung fü r AM - Em pfänger bis 3 0 MHz. Oer S chaltkreis beinhaltet neben Vor-, M isch- und O szillatorstufe einen vierstufigen Z F -V e rs tä rk e r und zwei unabhängige Regelkreise.

Contextual Info: FMMT2369 FMMT2369A S 0 T 2 3 NPN SILICON PLANAR HIGH SPEED SWITCHING TRANSISTORS PARTMARKING DETAILS: FMMT2369 - 1J FM MT2369A - P5 FMMT2369R - 9R FMMT2369AR - 9A ABSOLUTE MAXIMUM RATINGS VALUE U N IT V CBO 40 V V CES 40 V V C EO 15 V V mA PARAM ETER SYMBOL

dps92256

Abstract: DPS92256-150 62256 static ram 62256 RAM DPS92256-120 M-85L 62256 122 "256k cmos static ram"
Contextual Info: - 122 - 2 5 6 K A 4 m faKicBS & tt £ CC CMOS •/ TAAC •ax ns) TCAC max (ns) TOE max (ns) TOH min (ns) f- S t a t i c > / RAM ( 3 2 7 6 8 X 8 ) ft it TOD ma>; (ns) TWP id¡in (ns) TDS min (ns) TDH min (ns) TWD min (ns) TWR max (ns) V D D or V C C (V)

VP0808B

Abstract: VP0808L VP0808M VP1008B VP1008L VP1008M VQ2006J VQ2006P
Contextual Info: VPMH10 Part Numbers: VP1008L, VP0808L, VP1008M, VP0808M, VQ2006P, VQ2006J, VP1008B, VP0808B Leakage Currente Ohmic Region Vos— d r a in Tc—CASE TEMPERATURE °C SO U R C E VOLTAGE (VOLTS) ON Resistance Characteristics O Z I -60 -2 0 20 60 100 140 180

Contextual Info: HIN202E thru HIN213E HARRIS S E M I C O N D U C T O R +/-15kV, ESD -Protected, +5V Powered, RS-232 Transm itters/R eceivers December 1997 Features Description • High Speed ISDN Compatible. 230kbits/s The HIN202E-HIN213E family of RS-232 transmitters/receivers

Contextual Info: GLI.A Vishay ESTA Metallized Film Power Capacitor FEATURES • Lowest stray inductance • Extremely low losses also at high frequencies • Low ESR: < 4mΩ • Highest RMS current rating: up to 100A • High impulse discharge current capability • Heavy duty shock and vibration

irf840

Abstract: equivalent irf840 irf840 equivalent irf840 rf MTM3N55 IRF533 IVN6100TNU IVN6200CND IVN6200CNE IVN6200CNF
Contextual Info: 1-17 MOSPOWER Cross Reference List c « ss <0J= P fi g c i n i n m i n • - CM CM CM ^ I m iD lO m • 'd d d o d ' r r r ' s 1o o o o o | I O O I I I P I I I | I o o r i mm | ioom m I ' < O Ò ' ' ' lO ' ' ' ' ' L -^ ^ l I c\i CM i I I j j CO 00 CO CO j

4N29-4N33

Contextual Info: 57E J> ÛUALITY TECHNOLOGIES CORP Optoisolator Specifications _ 7MbbfiSl Ü00mi|4 •ÛTY 4N29, 4N29A, 4N30, 4N31, 4N32, 4N32A, 4N33 Optoisolator G aA s Infrared Emitting Diode and N PN Silicon Photo-Darlington Amplifier SY M BO L M IN E

Contextual Info: b.QE ]> • Û1331S7 GG0LH34 flbO M S r iL B SEUELAB PLC T ' H - Z S SEMELAB D1014UK NEW PRODUCT RF SILICON FET GOLD METALLISED MULTI-PURPOSE SILICON DM O SRFFET 20W -28V-400M H z SINGLE ENDED M ECH A N ICA L DATA Dimensions FEATURES • SIMPLIFIED AMPLIFIER DESIGN

Contextual Info: SENELAB LTD 37E » DEC 3 i 1987 Ö1331Ö7 OÜGDlGä O • SMLB SEMELAB BDS10 BDS11 B DS12 NEW PRODUCT ^ SILICON NPN EPITAXIAL BASE TO 220 METAL MECHANICAL DATA Dimensions in mm 10-60 FEATURES rjf • HERMETIC TO 220 METAL PACKAGE it • HIGH RELIABILTY • ISOLATED OPTION

Contextual Info: SA M S UN G E L E C T R O N I C S INC b4E » • TTbHma N-CHANNEL POWER MOSFETS IRFP150/1511152/153 FEATURES • • • • • • • D Q 1 2 3 Ü 4 l b 1* ■ SMGK TO-3P Lower R d s <o n Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure

film capacitor markings

Contextual Info: GLI.A Vishay ESTA Metallized Film Power Capacitor FEATURES • Lowest stray inductance • Extremely low losses also at high frequencies • Low ESR: < 4mΩ • Highest RMS current rating: up to 100A • High impulse discharge current capability • Heavy duty shock and vibration

Contextual Info: Raytheon Electronics Semiconductor Division R296XX/R297XX S tandard PROMs and P ow er-S w itched SPROMs Features Description • Devices are available in military -55°C to +125°C temperature range • Standard PROMs are offered in power-switched SPROM

Contextual Info: g g j g l l SSR8045CT/3 P R E L IM IN A R Y SOLID STATE DEVICES, INC 14849 Firestone Boulevard La Mirada,CA 90638 Phone: 714 670-SSDI (7734) Fax: (714) 522-7424 80 AMP 45 VOLTS POSTIVE CENTERTAP SCHOTTKY RECTIFIER Designer’s Data Sheet FEATURES: • ■

SPD502

Abstract: SPD503 SPD504 SPD505 SPD506
Contextual Info: y SPD502 PRELIMINARY 4 SOLID STATE DEVICES, INC thru SPD506 :- // 14849 Firestone Boulevard - La Mirada,CA 90638 Phone: 714 670-SSDI (7734) Fax: (714) 522-7424 5 AMP 200-600 VOLTS 40 nsec HYPER FAST RECTIFIER Designer’s Data Sheet FEATURES: • ■ ■