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    Innovative Sensor Technology IST Ag KZ-011-0400-300N-E1-K0-G0

    FORCE RANGE: 300 N - APPLICATION
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    DigiKey KZ-011-0400-300N-E1-K0-G0 Bag 10 1
    • 1 $127.16
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    Mouser Electronics KZ-011-0400-300N-E1-K0-G0
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    Innovative Sensor Technology IST Ag KZ-011-0400-300N-E2-K1-G1

    FORCE RANGE: 300 N - APPLICATION
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    DigiKey KZ-011-0400-300N-E2-K1-G1 Bag 10 1
    • 1 $135.76
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    Mouser Electronics KZ-011-0400-300N-E2-K1-G1
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    Innovative Sensor Technology IST Ag KZ-011-0400-300N-E1-K6-G0

    FORCE RANGE: 300 N - APPLICATION
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    DigiKey KZ-011-0400-300N-E1-K6-G0 Bag 10 1
    • 1 $108.64
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    Mouser Electronics KZ-011-0400-300N-E1-K6-G0
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    Innovative Sensor Technology IST Ag KZ-011-0400-300N-E0-K1-G0

    FORCE RANGE: 300 N - APPLICATION
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    DigiKey KZ-011-0400-300N-E0-K1-G0 Bag 10 1
    • 1 $105.19
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    Mouser Electronics KZ-011-0400-300N-E0-K1-G0
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    Innovative Sensor Technology IST Ag KZ-011-0400-300N-E2-K1-G0

    FORCE RANGE: 300 N - APPLICATION
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey KZ-011-0400-300N-E2-K1-G0 Bag 9 1
    • 1 $105.19
    • 10 $105.19
    • 100 $105.19
    • 1000 $105.19
    • 10000 $105.19
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    Mouser Electronics KZ-011-0400-300N-E2-K1-G0
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    • 10 $84.37
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    300NE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TRANSISTOR Marking XB PNP

    Abstract: YTS3906
    Text: TOSHIBA TRANSISTOR YTS3906 SILICON PNP EPITAXIAL TYPE PCT PROCESS FOR GENERAL PURPOSE USE SWITCHING AND AMPLIFIER APPLICATIONS. FEATURES: . Low Leakage Current : IcEV“” 50nA(Max.), IuEV“ 50nA(Max.) 0 VCE— 30V, VBE-3V . Excellent DC Current Gain Linearity


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    PDF YTS3906 -50mA, YTS3904 300ne TRANSISTOR Marking XB PNP YTS3906

    Untitled

    Abstract: No abstract text available
    Text: TO S H I B A HSE D DISCRETE/OPTO • T Q T 7 E 5 D DDlflODD T « T O S M TOSHIBA TRANSISTOR - YTS3904 SILICON NPN EPITAXIAL TYPE (PCT PROCESS) FOR GENERAL PURPOSE USE SWITCHING AND AMPLIFIER Unit in mm APPLICATIONS. FEATURES: . Low Leakage Carrent : IcEV“50nA(Max.), IgEV^SOnAiMax.)


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    PDF YTS3904 SC-59 f-10Hz-15 300ne ln1N916

    TCA965 equivalent

    Abstract: ULN2283 capacitor 473j 100n UAF771 transistor GDV 65A pbd352303 cm2716 TAA2761 TAA4761 ULN2401
    Text: veryimpressivePrice. power drain. For the same low price astheTTL-compatible DG211. Very Impressive Performance. Low power, low source-drain ON resistance, low switching times, low current, low price. It all adds up to superstar performance for portable and battery-operated


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    PDF DG211. DG300 DG308 DG211 TCA965 equivalent ULN2283 capacitor 473j 100n UAF771 transistor GDV 65A pbd352303 cm2716 TAA2761 TAA4761 ULN2401

    A032b

    Abstract: LC72700E LC72700G LV3400M ltkd BLN70 uo7k
    Text: i i X a - KNo. N 4870E A / « / No. I = & m m = x- s y o // 4870E 60397 LC72700E C I C B LC72700G ' 80ttFM»BS8SS §fflLSl CMOS LSI LC72700E, 72700G(£, L S Iii, T f t fa ft F M £ £ FM □ > # ^ V V m # ^ b % h * m m m * 9 ' > a * J (D A R C fc £ « T 5 fc & 0 x . * - £ « H ffl LSTT: * S .


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    PDF N4870E 4870E Na4870D LC72700E LC72700G LC72700E, 72700Gf LV3400M) QFP48E A032b LC72700E LC72700G LV3400M ltkd BLN70 uo7k

    2N3904

    Abstract: 2N3906 2N3906 JEDEC
    Text: 4SE D • =10=17250 0017746 IT O S H b TOSHIBA TRANSISTOR 2N3906 SILICON PNP EPITAXIAL T Y P E PCT PROCESS ~> TOSHIBA ' T ■i (DISCRETE/OPTO) FOR GENERAL PURPOSE USE SWITCHING AND AMPLIFIER APPLICATIONS. FEATURES: . Low Leakage Current : ICEV~“50nA(Max.)» lBEV=50nA(Max.)


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    PDF -50nA -50mA, 2N3904 2N3906 Q0177S1 2N3904 2N3906 2N3906 JEDEC