300V 32A MOSFET Search Results

300V 32A MOSFET Result Highlights (5)

Part	Manufacturer	Description
TCK423G	Toshiba Electronic Devices & Storage Corporation	MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G
TCK425G	Toshiba Electronic Devices & Storage Corporation	MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G
TCK401G	Toshiba Electronic Devices & Storage Corporation	MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing / Auto-discharge, WCSP6E
TCK420G	Toshiba Electronic Devices & Storage Corporation	MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G
TCK422G	Toshiba Electronic Devices & Storage Corporation	MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G

300V 32A MOSFET Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
2SK3772-01 Contextual Info: 2SK3772-01 N-CHANNEL SILICON POWER MOSFET Outline Drawings mm 200406 TO-220AB FUJI POWER MOSFET Super FAP-G Series Features High speed switching No secondary breakdown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators	Original	2SK3772-01 O-220AB 2SK3772-01	PDF
diode sj Abstract: 2SK3774-01L Contextual Info: 2SK3774-01L,S,SJ N-CHANNEL SILICON POWER MOSFET Outline Drawings mm 200406 FUJI POWER MOSFET Super FAP-G Series Features High speed switching No secondary breakdown Avalanche-proof Low on-resistance Low driving power See to P4 Applications Switching regulators	Original	2SK3774-01L diode sj	PDF
2sk3773 Abstract: 12/24 v dc-dc converter schematic 2SK3773-01MR Contextual Info: 2SK3773-01MR N-CHANNEL SILICON POWER MOSFET Outline Drawings mm 200406 TO-220F FUJI POWER MOSFET Super FAP-G Series Features High speed switching No secondary breakdown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators	Original	2SK3773-01MR O-220F 2sk3773 12/24 v dc-dc converter schematic 2SK3773-01MR	PDF
Contextual Info: 2SK3772-01 200311 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power TO-220AB Applications Switching regulators DC-DC converters	Original	2SK3772-01 O-220AB	PDF
300v 32a mosfet Contextual Info: 2SK3773-01MR 200311 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power TO-220F Applications Switching regulators	Original	2SK3773-01MR O-220F Repetitive200 300v 32a mosfet	PDF
fr 2955 Abstract: 2SK3775-01 Contextual Info: 2SK3775-01 N-CHANNEL SILICON POWER MOSFET FUJI POWER MOSFET Outline Drawings mm Super FAP-G Series 200406 Features High speed switching, Low on-resistance Low driving power, Avalanche-proof No secondary breadown Applications Switching regulators UPS (Uninterruptible Power Supply)	Original	2SK3775-01 fr 2955 2SK3775-01	PDF
2955 mos Contextual Info: 2SK3774-01L,S,SJ FUJI POWER MOSFET 200311 N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators DC-DC converters	Original	2SK3774-01L 2955 mos	PDF
2SK3775-01 Contextual Info: 2SK3775-01 N-CHANNEL SILICON POWER MOSFET FUJI POWER MOSFET Outline Drawings mm Super FAP-G Series 200406 Features High speed switching, Low on-resistance Low driving power, Avalanche-proof No secondary breakdown Applications Switching regulators UPS (Uninterruptible Power Supply)	Original	2SK3775-01 2SK3775-01	PDF
48n60a3 Contextual Info: GenX3TM 600V IGBT w/Diode VCES = 600V IC110 = 48A VCE sat ≤ 1.35V IXGH48N60A3D1 Ultra Low Vsat PT IGBT for up to 5kHz switching TO-247 AD Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V	Original	IC110 IXGH48N60A3D1 O-247 48n60a3	PDF
Contextual Info: IXGH48N60A3D1 GenX3TM 600V IGBT w/Diode VCES = 600V IC110 = 48A VCE sat ≤ 1.35V Ultra Low Vsat PT IGBT for up to 5kHz switching TO-247 AD Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V	Original	IXGH48N60A3D1 IC110 O-247 IC110	PDF
IXGH48N60A3D1 Abstract: 48N60A3 48n60 IXGH48N60 Contextual Info: GenX3TM 600V IGBT with Diode IXGH48N60A3D1 VCES = 600V IC110 = 48A VCE sat ≤ 1.35V Ultra Low Vsat PT IGBT for up to 5kHz switching TO-247 (IXGH) Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ	Original	IXGH48N60A3D1 IC110 O-247 062in. IXGH48N60A3D1 48N60A3 48n60 IXGH48N60	PDF
Contextual Info: Advance Technical Information HiperFETTM Power MOSFET Q3-Class VDSS ID25 IXFR64N60Q3 RDS on trr (Electrically Isolated Tab) = = ≤ ≤ 600V 42A Ω 104mΩ 300ns N-Channel Enhancement Mode Fast Intrinsic Rectifier ISOPLUS247 E153432 Symbol Test Conditions	Original	IXFR64N60Q3 300ns ISOPLUS247 E153432 64N60Q3	PDF
IXFR64N60P Contextual Info: IXFR64N60P PolarTM HiPerFETTM Power MOSFET VDSS ID25 RDS on trr N-Channel Enhancement Mode Fast Intrinsic Rectifier = =   600V 36A  105m 200ns ISOPLUS247 E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 600 V VDGR TJ = 25C to 150C, RGS = 1M	Original	IXFR64N60P 200ns ISOPLUS247 E153432 100ms 80N60P3 5-15-14-F IXFR64N60P	PDF
IXFR64N60Q3 Contextual Info: Advance Technical Information IXFR64N60Q3 HiperFETTM Power MOSFET Q3-Class VDSS ID25 RDS on trr (Electrically Isolated Tab) = = ≤ ≤ 600V 42A Ω 104mΩ 300ns N-Channel Enhancement Mode Fast Intrinsic Rectifier ISOPLUS247 E153432 Symbol Test Conditions	Original	IXFR64N60Q3 300ns ISOPLUS247 E153432 64N60Q3 IXFR64N60Q3	PDF

2sk3773 Abstract: 2SK3773-01MR sd 2955 Contextual Info: 2SK3773-01MR N-CHANNEL SILICON POWER MOSFET Outline Drawings mm 200406 TO-220F FUJI POWER MOSFET Super FAP-G Series Features High speed switching No secondary breakdown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators	Original	2SK3773-01MR O-220F dV/d200 2sk3773 2SK3773-01MR sd 2955	PDF
SPF12 Contextual Info: 2SK3774-01L,S,SJ N-CHANNEL SILICON POWER MOSFET Outline Drawings mm 200406 FUJI POWER MOSFET Super FAP-G Series Features High speed switching No secondary breakdown Avalanche-proof Low on-resistance Low driving power See to P4 Applications Switching regulators	Original	2SK3774-01L SPF12	PDF
Contextual Info: 2SK3774-01L,S,SJ N-CHANNEL SILICON POWER MOSFET Outline Drawings mm 200406 FUJI POWER MOSFET Super FAP-G Series Features High speed switching No secondary breakdown Avalanche-proof Low on-resistance Low driving power See to P4 Applications Switching regulators	Original	2SK3774-01L	PDF
Contextual Info: PolarHVTM HiPerFET Power MOSFET VDSS ID25 IXFR 64N60P = = ≤ ≤ RDS on trr (Electrically Isolated Back Surface) 600 V 36 A 105 m Ω 200 ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to 150° C	Original	64N60P ISOPLUS247 E153432	PDF
64N60 Abstract: 64N60P ISOPLUS247 Contextual Info: PolarHVTM HiPerFET Power MOSFET VDSS ID25 IXFR 64N60P = = ≤ ≤ RDS on trr (Electrically Isolated Back Surface) 600 V 36 A 105 m Ω 200 ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to 150° C	Original	64N60P ISOPLUS247 E153432 64N60 64N60P ISOPLUS247	PDF
DSEP 15-06A Abstract: 20N60B2D1 IXSH20N60B2D1 IC ti 072 Contextual Info: IXSH 20N60B2D1 High Speed IGBT Short Circuit SOA Capability VCES = 600 V I C25 = 35 A V CE sat = 2.5 V Preliminary Data Sheet D1 Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 600 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous	Original	20N60B2D1 IC110 DSEP 15-06A 20N60B2D1 IXSH20N60B2D1 IC ti 072	PDF
Contextual Info: IXSH 20N60B2D1 High Speed IGBT Short Circuit SOA Capability VCES = 600 V I C25 = 35 A V CE sat = 2.5 V Preliminary Data Sheet D1 Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 600 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous	Original	20N60B2D1 IC110 5-06A	PDF
Contextual Info: Advance Technical Information HiperFETTM Power MOSFETs Q3-Class VDSS ID25 IXFK64N60Q3 IXFX64N60Q3 = = ≤ ≤ RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier TO-264 (IXFK) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C	Original	IXFK64N60Q3 IXFX64N60Q3 300ns O-264 IXFK64N50Q3 IXFX64N50Q3 64N60Q3	PDF
32N60CD1 Contextual Info: HiPerFASTTM IGBT with Diode ISOPLUS247TM VCES IC25 IXGR 32N60CD1 = 600 V = 45 A = 2.7 V = 55 ns VCE SAT tfi(typ) (Electrically Isolated Backside) Preliminary data sheet Maximum Ratings ISOPLUS 247TM (IXGR) E 153432 Symbol Test Conditions VCES TJ = 25°C to 150°C	Original	ISOPLUS247TM 32N60CD1 2x31-06B 32N60CD1	PDF
2x31-06B Contextual Info: HiPerFASTTM IGBT with Diode ISOPLUS247TM IXGR 32N60CD1 VCES IC25 VCE SAT typ tfi(typ) (Electrically Isolated Backside) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V	Original	ISOPLUS247TM 32N60CD1 247TM 2x31-06B 2x31-06B	PDF

300V 32A MOSFET Search Results

300V 32A MOSFET Result Highlights (5)

300V 32A MOSFET Datasheets Context Search

2SK3772-01

diode sj

2sk3773

300v 32a mosfet

fr 2955

2955 mos

2SK3775-01

48n60a3

IXGH48N60A3D1

IXFR64N60P

IXFR64N60Q3

2sk3773

SPF12

64N60

DSEP 15-06A

32N60CD1

2x31-06B