3030BLD Search Results

C30916E

Abstract: rca 036 spot photodetector
Contextual Info: G & G/CANA]>A/OPTOELEK I t C J l 10 ]> I 3030blD 0000135 07b Electro uptics and Devices ICANA Photodiode Developmental Type C30916E - f - V 1-51 Large Area Silicon Avalanche Photodiode for General-Purpose Applications 8 5% typical at 900 nm Fast Tim e Response —

1012 opamp

Abstract: kss 215
Contextual Info: E G & G/CANADA/OPTOELEK 3030blD 0DDD32b b • CANA 47E D HAD Series 1100A T -W -6 7 Features • • Built-in High Speed Amplifier Groundable Case • Shielded Amplifier • Offset Null Control • • W ide Spectral Range Large Active Area Operating Data and Specifications at 23°C

Contextual Info: E fi i G / C A N A D A / O P T O E L E K R G i l Optics IO D WÊ 3030blD OOOOObM TTb H C A N A NEW SLETTER PRELIMINARY DATA SHEET SERIES C86048 AND C86070 1060 nm Pulsed Lasers Desiqned and characterized primarily for simulation of Nd/YAG lasers, the diodes are offered in TO-5 outline with window or fiber piqtail.

TCN-1000-12

Abstract: NEP 250 TCN-1000-93 TCN-1000-3
Contextual Info: E G & G/CANADA/OPTOELEK H7E D • 3030blD 00D031Ô 7 «CANA TCN-1000 Series -93; -12; - 3 _ t - h i- 6 7 Features • • Built-in Low Noise Amplifier Shielded Feedback Loop • Large Active Area • Shielded Amplifier • • Low Offset Wide Spectral Range

C86083E

Abstract: DHHS
Contextual Info: E G & G/CANADA/OPTOELÊK ETE D 3030blD 000025b □ ICANA 850 nm Quantum Weil7^ ^ : Pulsed Laser Series DATA SHEET C86083E - High power pulsed laser in a coaxial package • T ■ O p eration at 50n s p ulse d u ration and 3 k H z rep etition rate ■ H igh P ea k O u tp u t P ow er:

C30617E

Abstract: C30616E ingaas LED 5-1304 C86013E C30986E C86054E C86057E-13 C86057E-13-TC C86057E-14
Contextual Info: E G 8. G / C A N A D A / O P T O E L E K ItCJI 10E D • 3030blD OOQQOn A ■ CANA "H’ Electro InGaAsP Infrared Emitters Optics 1300 nm LED SERIES DATA SHEET C86057E SERIES - D u al-in -L in e p ack ag e S in g le o r m u ltim o d e fiber C86013E C86054E

gaseous lasers

Abstract: C86083E C86093E 910nm laser rca rca 019 1200cu general electric laser 910nm
Contextual Info: E G 8. G/CANADA/OPTOELEK Electro Optics 5TE ì> m 3030blD 0D0D2b0 2 • CANA T 1 ¥ /~ O S ^ C86093E 910 nm Quantum Well Pulsed Laser DATA SHEET Coaxial Stud Package m 1r 1 The C86093E is a high power single element pulsed laser diode operating in the 900to 920 nm wavelength band. Using

Contextual Info: E G & G/CANADA/OPTOELEK I t C / l T> I ID 3030blD 0DDD135 Electro uptics and Devices 07b « C A N A Photodiode Developm ental Type C30916E - f 'HI-51 Large Area Silicon Avalanche Photodiode for General-Purpose Applications High Quantum Efficiency 85% typical at 900 nm

dual photodiode

Abstract: 2525BG photodiode amplifier
Contextual Info: E G & G / CANADA/OPTOELEK 47E D • 30301=10 000031b 3 «CANA r HUV Dual Series 2525BG Features • • • • • • Dual Channel Photodiode Shielded Amplifier Groundable Case Built-in Low Noise Amplifier W ide Spectral Range Oxide Passivated Structure

sg3001

Abstract: 2l688 "rca application note" AN4469 904nm laser rca eg and g laser diode AN-4993 10-dimensional rca 036
Contextual Info: E G & G/CANADA/OPTOELEK n IO D • 3030bl0 0000070 SÛO M C A N A "T”- V/- Solid State f l * MW Electro Optics and Devices I f b f l E lectro O p t lC S SG3001 Stacked-Diode Laser Gallium Arsenide Type for Pulse Operation Total Peak Radiant Flux Power Output

Contextual Info: G 8. G / C A N A D A / O P T O E L E K Electro Optics 2TE D 3D3DblD 00002b0 2 T Z¿/ / ~ O S ^ IC A N A C86093E 910 nm Quantum Well Pulsed Laser DATA SHEET • V ■ ■ ■ ■ Operation at 200ns pulse duration and 5 kHz repetition rate High Peak Output Power:

Contextual Info: G & G / CANADA/OPTOELEK Æ• n ■ m 10E D ■ Electro b # ■ Optics *1 :ï ■a T C86045EV1 M C86045EV2 The RCA C86045 and C86053 series are InGaAsP laser diodes designed specifically for fiber optic test systems. The output wavelength 1300 nm is well

AM 22A

Contextual Info: E G & G/CANA DA/O PTOE LEK I t C i l IG » 3G3GblD GOGOlbT bfib H C A N A Silicon Photodiodes C30997 Series E le c ,r o Optics ' 'rsj DATA SHEET "à Transimpedance Preamplifier Modules With or Without Integral Fiber Optic Pigtails for Detection of 400 to 1000 nm Radiation

Contextual Info: E S S 6/CANADA/OPTOELEK m 3030bl0 0000334 5 47 E t ICANA F Series FFD-040;FFD-100;FFD-200 rv/ J3 Features • • • • Low Operating Voltage High Responsivity Ultra-Fast Rise and FallTim e Isolated Photodiode Chip • • • Large Active Area W ide Spectral Range

Contextual Info: E G & G/CANADA/OPTOELEK itc /i 10 ]> tiectrouptics and Devices 3030bl0 0D00GSD MT1 H C A N A Laser Developmental Type Low Threshold CW-Operated Gallium Aluminum Arsenide Injection Laser • Typical Threshold Current — 75 mA ■ Continuous or Pulsed Operation at Room Temperature

C30902S

Abstract: diode C309 C30902E rangefinding tr c3090 C30902 DEAD TIME FOR THE DETECTOR C30902 geiger counter C30921E avalanche photodiode bias
Contextual Info: E G & G/CANADA/OPTOELEK I t c / T OptiCS IO T1 Silicon Avalanche Photodiodes 3G3DblD DDGDlEb 0b3 • CANA » C30902E, C30902S, C30921E, C30921S DATA SHEET I High Speed Solid State Detectors for Fiber Optic and Very L o w Lig h t-Le ve l Applications RCA Type C30902E ava­

2N3818

Abstract: laser rca 2l688 C86000E rca laser eg and g laser diode RCA Solid State S20 rca OP-12 laser diode module 820 nm
Contextual Info: G & G/CANADA/OPTOELEK IG ì> 3030blQ GDGDDSG 4T1 • CAN A Laser t ie c t r o u p t ic s i t c j i and Devices Developmental Type Low Threshold CW-Operated Gallium Aluminum Arsenide Injection Laser ■ Typical Threshold Current — 75 mA ■ Continuous or Pulsed Operation at Room Temperature

C30817

Abstract: RCA C30817 LXA 102 103 PTS 400 C3081 QQG0107 921S-4
Contextual Info: E 6 & 6/CANADA/OPTOELEK 10 » yy- r 3D30fc>10 ÜÜ001D5 33^ B K A N A WM flTB ÆM Electro Photodiode C30817 DATA SHEET • mw#loptics Silicon Avalanche Photodiode for General-Purpose Applications ■ High Quantum Efficiency — 85% typical at 900 nm — 18% typical at 1060 nm