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Nisshinbo Micro Devices RP130N501D-TR-FE IC REG LINEAR 5V 150MA SOT23-5
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey ()	RP130N501D-TR-FE	Digi-Reel	2,983		1	1 $0.41 10 $0.283 100 $0.2178 1000 $0.18377 10000 $0.18377	Buy Now
	RP130N501D-TR-FE	Cut Tape	2,983		1	1 $0.41 10 $0.283 100 $0.2178 1000 $0.18377 10000 $0.18377	Buy Now
Littelfuse Inc IXTH30N50L2 MOSFET N-CH 500V 30A TO247
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXTH30N50L2	Tube	593		1	1 $29.31 10 $29.31 100 $20.38533 1000 $19.84075 10000 $19.84075	Buy Now
Littelfuse Inc IXFH30N50Q3 MOSFET N-CH 500V 30A TO247AD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXFH30N50Q3	Tube	412		1	1 $13.31 10 $13.31 100 $8.88433 1000 $7.69263 10000 $7.69263	Buy Now
RS	IXFH30N50Q3	Bulk		8 Weeks	300	1 - 10 - 100 - 1000 $11.31 10000 $10.95	Get Quote
Littelfuse Inc IXTT30N50L2 MOSFET N-CH 500V 30A TO268
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXTT30N50L2	Tube	193		1	1 $16.61 10 $16.61 100 $10.98533 1000 $10.32933 10000 $10.32933	Buy Now
Newark	IXTT30N50L2	Bulk			300	1 - 10 - 100 - 1000 $10.83 10000 $10.83	Buy Now
Littelfuse Inc IXFT30N50Q3 MOSFET N-CH 500V 30A TO268
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXFT30N50Q3	Tube	30		1	1 $9.04 10 $9.04 100 $8.85367 1000 $8.68537 10000 $8.68537	Buy Now
Newark	IXFT30N50Q3	Bulk			300	1 - 10 - 100 - 1000 $9.11 10000 $9.11	Buy Now
RS	IXFT30N50Q3	Bulk		8 Weeks	300	1 - 10 - 100 - 1000 $12.76 10000 $12.36	Get Quote

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30N50 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
TO-3P weight Abstract: ixys ixfh 30n50p QG SMD TRANS PLUS220SMD 123B16 Contextual Info: Advance Technical Information PolarHVTM Power HiPerFET MOSFET VDSS ID25 IXFH 30N50P IXFT 30N50P IXFQ 30N50P IXFV 30N50P IXFV 30N50PS N-Channel Enhancement ModeAvalanche Rated Fast Intrinsic Diode RDS on trr = 500 V = 30 A Ω = 200 mΩ < 200 ns TO-3P (IXFQ)	Original	30N50P 30N50PS PLUS220 TO-3P weight ixys ixfh 30n50p QG SMD TRANS PLUS220SMD 123B16	PDF
ixys ixfh 30n50p Contextual Info: Advance Technical Information PolarHVTM Power HiPerFET MOSFET VDSS ID25 IXFH 30N50P IXFT 30N50P IXFQ 30N50P IXFV 30N50P IXFV 30N50PS N-Channel Enhancement ModeAvalanche Rated Fast Intrinsic Diode RDS on trr = 500 V = 30 A Ω = 200 mΩ < 200 ns TO-3P (IXFQ)	Original	30N50P 30N50PS PLUS220 ixys ixfh 30n50p	PDF
IXFR32N50 Contextual Info: Advanced Technical Information HiPerFETTM Power MOSFETs ISOPLUS247TM VDSS IXFR 30N50Q IXFR 32N50Q Electrically Isolated Back Surface ID25 500 V 29 A 500 V 30 A trr ≤ 250 ns RDS(on) 0.16 Ω 0.15 Ω N-Channel Enhancement Mode High dV/dt, Low trr, HDMOSTM Family	Original	ISOPLUS247TM 30N50Q 32N50Q 30N50 32N50 32N50 247TM IXFR32N50	PDF
IXFR32N50 Contextual Info: Advanced Technical Information HiPerFETTM Power MOSFETs ISOPLUS247TM VDSS IXFR 30N50Q IXFR 32N50Q Electrically Isolated Back Surface ID25 RDS(on) 0.16 Ω 0.15 Ω 500 V 29 A 500 V 30 A trr ≤ 250 ns N-Channel Enhancement Mode High dV/dt, Low trr, HDMOSTM Family	Original	ISOPLUS247TM 30N50Q 32N50Q 30N50 32N50 32N50 125OC IXFR32N50	PDF
Contextual Info: Advance Technical Information PolarHVTM HiPerFET Power MOSFET IXFC 30N50P VDSS ID25 RDS on Electrically Isolated Back Surface = 500 V = 17 A ≤ 225 mΩ Ω N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated Symbol Test Conditions Maximum Ratings	Original	30N50P ISOPLUS220TM E153432 405B2	PDF
30n50 Contextual Info: Photoelectric sensors FZAM 30N5002 Diffuse sensors with intensity difference dimension drawing 66 54 M30 x 1,5 SW 36 Pot LED general data photo type intensity difference light source pulsed infrared diode sensing distance Tw 300 . 1500 mm alignment / soiled lens indicator	Original	30N5002 30n50	PDF
Contextual Info: Photoelectric sensors FZAM 30N5003 Diffuse sensors with intensity difference dimension drawing 66 54 M30 x 1,5 SW 36 Pot LED general data photo type intensity difference light source pulsed infrared diode sensing distance Tw 100 . 700 mm alignment / soiled lens indicator	Original	30N5003	PDF
Contextual Info: Photoelectric sensors FZAM 30N5003 Diffuse sensors with intensity difference dimension drawing 66 54 M30 x 1,5 SW 36 Pot LED general data photo type intensity difference light source pulsed infrared diode sensing distance Tw 100 . 700 mm alignment / soiled lens indicator	Original	30N5003	PDF
Contextual Info: Photoelectric sensors FZAM 30N5004 dimension drawing 66 54 M30 x 1,5 SW 36 LED Pot general data photo actual range Sb 1400 mm sensing distance Tw 230 mm light source pulsed infrared diode light indicator LED yellow alignment / soiled lens indicator LED, flashing	Original	30N5004	PDF
Contextual Info: Photoelectric sensors FZAM 30N5004 dimension drawing 66 54 M30 x 1,5 SW 36 LED Pot general data photo actual range Sb 1400 mm sensing distance Tw 230 mm light source pulsed infrared diode light indicator LED yellow alignment / soiled lens indicator LED, flashing	Original	30N5004	PDF
30N50 Abstract: IXFR32N50 Contextual Info: HiPerFETTM Power MOSFETs ISOPLUS247TM VDSS IXFR 32N50 IXFR 30N50 Electrically Isolated Back Surface N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family ID25 500 V 30 A 500 V 29 A trr £ 250 ns RDS(on) 0.15 W 0.16 W Preliminary data Symbol Test Conditions	Original	ISOPLUS247TM 32N50 30N50 30N50 IXFR32N50	PDF
Contextual Info: HiPerFETTM Power MOSFETs IXFH/IXFT 30N50 IXFH/IXFT 32N50 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Symbol Maximum Ratings T J = 25°C to 150°C T J = 25°C to 150°C; RGS = 1 MW VGS VGSM Continuous Transient ID25 TC = 25°C IDM IAR TC = 25°C	Original	30N50 32N50 125OC	PDF
Contextual Info: PolarHVTM Power MOSFET VDSS ID25 IXTH 30N50P IXTQ 30N50P IXTT 30N50P IXTV 30N50P IXTV 30N50PS N-Channel Enhancement Mode Avalanche Rated RDS on = 500 V = 30 A ≤ 200 mΩ Ω TO-247 AD (IXTH) Symbol Test Conditions VDSS TJ = 25° C to 150° C 500 V VDGR	Original	30N50P 30N50PS O-247 30N50P O-247 PLUS220	PDF
Contextual Info: PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode VDSS ID25 IXFH 30N50P IXFT 30N50P IXFV 30N50P IXFV 30N50PS RDS on trr = 500 V = 30 A ≤ 200 mΩ Ω ≤ 200 ns TO-247 AD (IXFH) Symbol Test Conditions Maximum Ratings	Original	30N50P 30N50PS O-247 30N50P O-247	PDF

Contextual Info: Photoelectric sensors FZAM 30N5003 Diffuse sensors with intensity difference dimension drawing 66 54 M30 x 1,5 SW 36 Pot LED general data photo type intensity difference light source pulsed infrared diode sensing distance Tw 100 . 700 mm alignment / soiled lens indicator	Original	30N5003	PDF
32N50 Abstract: 30n50 Contextual Info: H iPerFET Power M O SFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOS™ Family IXFH 30N50 IXFH 32N50 p V DSS ^D25 500 V 30 A 0.16 f i 500 V 32 A trr £ 250 ns 0.15 Û DS on Preliminary data Sym bol Test C onditions V DSS Tj = 2 5 °C to 1 5 0 °C	OCR Scan	30N50 32N50 32N50 5A/25 6A/25	PDF
Contextual Info: Photoelectric sensors FZAM 30N5004 dimension drawing 66 54 M30 x 1,5 SW 36 LED Pot general data photo actual range Sb 1400 mm sensing distance Tw 230 mm light source pulsed infrared diode light indicator LED yellow alignment / soiled lens indicator LED, flashing	Original	30N5004	PDF
Contextual Info: Photoelectric sensors FZAM 30N5002 Diffuse sensors with intensity difference dimension drawing 66 54 M30 x 1,5 SW 36 Pot LED general data photo type intensity difference light source pulsed infrared diode sensing distance Tw 300 . 1500 mm alignment / soiled lens indicator	Original	30N5002	PDF
fast IXFX Abstract: MD 202 TO-264-aa TO-268 transistor tl 187 IXFK 125OC 32N50Q Contextual Info: VDSS HiPerFETTM Power MOSFETs Q-Class IXFK/IXFX 30N50Q IXFK/IXFX 32N50Q ID25 RDS on 500 V 30 A 0.16 Ω 500 V 32 A 0.15 Ω trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C	Original	30N50Q 32N50Q 247TM O-264 125OC 728B1 fast IXFX MD 202 TO-264-aa TO-268 transistor tl 187 IXFK 125OC 32N50Q	PDF
30N50 Abstract: 32N50 32N50Q IXFR30N50 IXFR32N50 Contextual Info: HiPerFETTM Power MOSFETs ISOPLUS247TM VDSS Electrically Isolated Back Surface IXFR 30N50Q IXFR 32N50Q ID25 500 V 29 A 500 V 30 A trr £ 250 ns RDS(on) 0.16 W 0.15 W N-Channel Enhancement Mode High dV/dt, Low trr, HDMOSTM Family Preliminary data Symbol Test Conditions	Original	ISOPLUS247TM 30N50Q 32N50Q 247TM 125OC 30N50 32N50 32N50Q IXFR30N50 IXFR32N50	PDF
Contextual Info: Photoelectric sensors FZAM 30N5001 Fiber optic sensors & cables dimension drawing 66 54 M30 x 1,5 SW 36 LED Pot general data photo actual range Sb 600 mm sensing distance Tw 110 mm light source pulsed infrared diode light indicator LED yellow alignment / soiled lens indicator	Original	30N5001	PDF
Contextual Info: Photoelectric sensors FZAM 30N5004 dimension drawing 66 54 M30 x 1,5 SW 36 LED Pot general data photo actual range Sb 1400 mm sensing distance Tw 230 mm light source pulsed infrared diode light indicator LED yellow alignment / soiled lens indicator LED, flashing	Original	30N5004	PDF
Contextual Info: Photoelectric sensors FZAM 30N5004 dimension drawing 66 54 M30 x 1,5 SW 36 LED Pot general data photo actual range Sb 1400 mm sensing distance Tw 230 mm light source pulsed infrared diode light indicator LED yellow alignment / soiled lens indicator LED, flashing	Original	30N5004	PDF
32n50 Abstract: 32n50k transistor ixfh application note 30N50 1910 0016 diode 125OC IXFH30N50 IXFH32N50 Contextual Info: HiPerFETTM Power MOSFETs IXFH/IXFT 30N50 IXFH/IXFT 32N50 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Symbol Maximum Ratings T J = 25°C to 150°C T J = 25°C to 150°C; RGS = 1 MW VGS VGSM Continuous Transient ID25 TC = 25°C IDM IAR TC = 25°C	Original	30N50 32N50 125OC 32n50 32n50k transistor ixfh application note 30N50 1910 0016 diode 125OC IXFH30N50 IXFH32N50	PDF

30N50 Search Results

30N50 Price and Stock

Nisshinbo Micro Devices RP130N501D-TR-FE

Littelfuse Inc IXTH30N50L2

Littelfuse Inc IXFH30N50Q3

Littelfuse Inc IXTT30N50L2

Littelfuse Inc IXFT30N50Q3

30N50 Datasheets Context Search

TO-3P weight

ixys ixfh 30n50p

IXFR32N50

IXFR32N50

30n50

30N50

32N50

fast IXFX

30N50

32n50