30SEP02 Search Results

Contextual Info: THIS DRAWING 15 UNPUBLISHED. COPYRIGHT - RELEASED TÖR PUBLICATION LOC A LL RIGHTS RESERVED. BY TYCO ELECTRONICS CORPORATION. REVISIONS DIST J p LTR DESCRIPTION c B REVISED DATE F J 0 0 - 1 8 2 3 -0 2 30SEP02 DWN T.K K.K 0.7 D -7 AS SHOWN -Y - ^ ±005 V. y

Contextual Info: THIS DRAWING 15 UNPUBLISHED. COPYRIGHT - RELEASED EÖR PUBLICATION J LOC A LL RIGHTS RESERVED. BY TYCO ELECTRONICS CORPORATION. REVISIONS SE DIST p LTR DESCRIPTION c B REVISED DATE F J 0 0 - 1 8 2 3 -0 2 30SEP02 DWN T.K K.K 0.7 D AS -7 I f o r ^V. ±005 SHOWN

Contextual Info: THIS DRAWING 15 UNPUBLISHED. COPYRIGHT - RELEASED TÖR PUBLICATION LOC BY TYCO ELECTRONICS CORPORATION. DIST REVISIONS J ALL RIGHTS RESERVED. p LTR DESCRIPTION c B DATE REVISED F J 0 0 -1 8 2 3 -0 2 DWN 30SEP02 T.K K.K 0.7 D AS -7 ^ V. y j I I Tj I I y I I p i iTj

for 3g 9k

Contextual Info: 4 3 THIS DRAWING IS UNPUBLISHED. COPYRIGHT RELEASED FOR PUBLICATION 2 - ALL RIGHTS RESERVED. BY TYCO ELECTRONICS CORPORATION. LOC DIST AD 00 REVISIONS LTR A DESCRIPTION DATE EC0G3G —0 2 6 6 —02 DWN 30SEP02 APVD WL WBH D D ,068 ±,006 X ,039 ±,006 DEEP

TDA8361E

Abstract: tda8362e VY17169-2 PCF7943 PCF7943AT ON4292 P87C380AER PCF7943AT/1091C420 PCF7943AT/1091C315 TDA8359J equivalent
Contextual Info: PHILIPS SEMICONDUCTORS Product discontinuation Notice DN46 December 31, 2001 SEE DN46 NOTICE LETTER FOR APPLICABLE TERMS, CONDITIONS AND CODE DEFINITIONS FOR THESE DISCONTINUED PRODUCTS. REFER TO PHILIPS WEB-SITE "http://www.semiconductors.philips.com/eol" FOR ADDED INFORMATION.

SUD70N02-05P

Contextual Info: SUD70N02-05P New Product Vishay Siliconix N-Channel 20-V D-S 175_C MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.005 @ VGS = 10 V 30 APPLICATIONS 0.0083 @ VGS = 4.5 V 23 D Synchronous Buck DC/DC Conversion - Desktop - Server VDS (V) 20 D TrenchFETr Power MOSFET

LPE-4841-A

Abstract: LPE-4841-A313 48v to 5v dc schematic
Contextual Info: LPE-4841-A313 Vishay Dale Current Sense Transformer ELECTRICAL SPECIFICATIONS Primary Inductance 4- 3 : 2000µH ± 20% @ 0.1Vrms, 100KHz Primary DC Current (Continuous): 0.120A(dc) For temperature rise of 30°C maximum Primary Incremental Current (or Peak Current):

diagram 94v-0

Abstract: Pcf-112d2m tyco 24v relay 1n00
Contextual Info: THIS DRAWING IS UNPUBLISHED. RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. COPYRIGHT 11.8 0.8 D REVISIONS DIST HH ALL RIGHTS RESERVED. 12 6.6 LOC 0.8 DESCRIPTION LTR DATE ECN APVD 8.4 RELEASE 08-APR-01 K. 0 A. N 6. 35 RELEASE 30-SEP-02 H. S A. N

21683

Abstract: SI4913DY
Contextual Info: Si4913DY New Product Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -20 D TrenchFETr Power MOSFET D Advanced High Cell Density Process rDS(on) (W) ID (A) 0.015 @ VGS = -4.5 V -9.4 APPLICATIONS 0.019 @ VGS = -2.5 V - 8.4

Contextual Info: LPE-4841-A313 Vishay Dale Current Sense Transformer ELECTRICAL SPECIFICATIONS Primary Inductance 4- 3 : 2000µH ± 20% @ 0.1Vrms, 100KHz Primary DC Current (Continuous): 0.120A(dc) For temperature rise of 30°C maximum Primary Incremental Current (or Peak Current):

SF0044BA01930S

Contextual Info: 44.0 MHz Filter for Broadband Access Applications Part Number SF0044BA01930S Micro Networks , 324 Clark Street, Worcester, MA 01606, USA tel: 508-852-5400, fax:508-852-8456, www.micronetworks.com TYPICAL PERFORMANCE Horizontal: 2.5 MHz/div Vertical from top : Magnitude

TDA8842 s1

Abstract: ALP018TT BLV1819-30 TDA8842 S1 tda8842 s1 datasheet TDA8842 S1 TDA4859ps OH191 blv1819-4a blv1819 BAX12 equivalent
Contextual Info: PHILIPS SEMICONDUCTORS Product Discontinuation Notice DN47 June 30, 2002 SEE DN47 NOTICE LETTER FOR APPLICABLE TERMS, CONDITIONS AND CODE DEFINITIONS FOR THESE DISCONTINUED PRODUCTS. REFER TO PHILIPS WEB-SITE "http://www.semiconductors.philips.com/eol" FOR ADDED INFORMATION.

to-236

Abstract: MBR20H
Contextual Info: MBR20H100CT, MBRF20H100CT & MBRB20H100CT Series Vishay Semiconductors New Product formerly General Semiconductor Dual High-Voltage Schottky Rectifiers Reverse Voltage 90 to 100V Forward Current 20A ITO-220AB MBRF20H90CT, MBRF20H100CT 0.188 (4.77) 0.172 (4.36)

2000uH

Abstract: LPE-4841-A313
Contextual Info: LPE-4841-A313 Vishay Dale Current Sense Transformer ELECTRICAL SPECIFICATIONS Primary Inductance 4- 3 : 2000µH ± 20% @ 0.1Vrms, 100KHz Primary DC Current (Continuous): 0.120A(dc) For temperature rise of 30°C maximum Primary Incremental Current (or Peak Current):

Si1557DH

Contextual Info: Si1557DH New Product Vishay Siliconix N- and P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY FEATURES VDS (V) N-Channel P-Channel 12 -12 rDS(on) (W) ID (A) 0.235 @ VGS = 4.5 V 1.3 0.280 @ VGS = 2.5 V 1.2 D TrenchFETr Power MOSFETs D Thermally Enhanced SC-70 Package

293D

Abstract: IEC825 TFDU4100 82556 VFIR controller
Contextual Info: TFDU4100 Vishay Semiconductors Serial Infrared Transceiver SIR, 115.2 kbit/s, 2.7 V to 5.5 V Operation Description The TFDU4100 is a part of the 4000 – family of low – current consumption infrared transceiver modules compliant to the IrDA standard for serial infrared SIR

Contextual Info: Si1557DH New Product Vishay Siliconix N- and P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY FEATURES VDS (V) N-Channel P-Channel 12 -12 rDS(on) (W) ID (A) 0.235 @ VGS = 4.5 V 1.3 0.280 @ VGS = 2.5 V 1.2 D TrenchFETr Power MOSFETs D Thermally Enhanced SC-70 Package

Contextual Info: Si4933DY New Product Vishay Siliconix Dual P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -12 D TrenchFETr Power MOSFET D Advanced High Cell Density Process rDS(on) (W) ID (A) 0.014 @ VGS = -4.5 V -9.8 APPLICATIONS 0.017 @ VGS = -2.5 V - 8.9

SUD70N02-04P

Abstract: sep 83a
Contextual Info: SUD70N02-04P New Product Vishay Siliconix N-Channel 20-V D-S 175_C MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.0037 @ VGS = 10 V 37 APPLICATIONS 0.0061 @ VGS = 4.5 V 29 D Synchronous Buck Converter - Low Side D Synchronous Rectifier - Secondary Rectifier

Si4925BDY

Contextual Info: Si4925BDY New Product Vishay Siliconix Dual P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.025 @ VGS = -10 V -7.1 0.041 @ VGS = -4.5 V - 5.5 D TrenchFETr Power MOSFET D Advanced High Cell Density Process APPLICATIONS -30

82556

Abstract: 14880
Contextual Info: TFDU4100 Vishay Semiconductors Serial Infrared Transceiver SIR, 115.2 kbit/s, 2.7 V to 5.5 V Operation Description The TFDU4100 is a part of the 4000 – family of low – current consumption infrared transceiver modules compliant to the IrDA standard for serial infrared SIR

Contextual Info: Alle lechte vorbehalten/ M l rights re strni 3 6 , 3 . 0,25 0, 8 co i l /• 1 1 1 1 1 —1 . 1 1 * 0,2 PCB h o l e p a t t e r n , m o u n t i n g s i d e 1 N 1 — 1— -1— 1— — — 22,86 22,86 1— . 1— 8,89 16,51 _ _

SUD50N02-06P

Abstract: A322-4
Contextual Info: SUD50N02-06P New Product Vishay Siliconix N-Channel 20-V D-S 175_C MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.006 @ VGS = 10 V 26 APPLICATIONS 0.0095 @ VGS = 4.5 V 21 D Synchronous Buck DC/DC Conversion - Desktop - Server VDS (V) 20 D TrenchFETr Power MOSFET

TO-263AB Package

Abstract: MBRB20H100CT MBRB20H90CT MBRF20H100CT MBRF20H90CT MBR20H100CT MBR20H90CT
Contextual Info: MBR20H100CT, MBRF20H100CT & MBRB20H100CT Series Vishay Semiconductors New Product formerly General Semiconductor Dual High-Voltage Schottky Rectifiers Reverse Voltage 90 to 100V Forward Current 20A ITO-220AB MBRF20H90CT, MBRF20H100CT 0.188 (4.77) 0.172 (4.36)