BAT42WS
Abstract: BAT43WS
Text: BAT42WS BAT43WS Surface Mount Schottky Barrier Diode P b Lead Pb -Free SCHOTTKY DIODE 200mAMPERS 30VOLTS Features: * Low Forward Voltage Drop * Fast Switching * Ultra-Small Surface Mount Package Mechanical Data: * Case: SOD-323, Plastic * Case Material-UL Flammability Rating Classification 94V-0
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BAT42WS
BAT43WS
200mAMPERS
30VOLTS
OD-323,
MIL-STD-202,
OD-323
OD-323
BAT42WS
BAT43WS
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31DQ
Abstract: 31DQ04
Text: SBD Type : 31D 31DQ04 OUTLINE DRAWING FEATURES * Low Forward Voltage Drop * Low Power Loss, High Efficiency * High Surge Capability * 30volts trough 100volts Types Available Maximum Ratings Rating Repetitive Peak Reverse Voltage Non-repetitive Peak Reverse Voltage
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31DQ04
30volts
100volts
31DQ
31DQ04
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Untitled
Abstract: No abstract text available
Text: BAT42WS BAT43WS Surface Mount Schottky Barrier Diode * “G” Lead Pb -Free SCHOTTKY DIODE 200mAMPERS 30VOLTS Features: * Low Forward Voltage Drop * Fast Switching * Ultra-Small Surface Mount Package * Also Available in Lead Free Version Mechanical Data:
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BAT42WS
BAT43WS
200mAMPERS
30VOLTS
OD-323,
MIL-STD-202,
OD-323
OD-323
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MMBV3102LT1
Abstract: Diode Capacitance Diode 1
Text: LESHAN RADIO COMPANY, LTD. Silicon Tuning Diode MMBV3102LT1 This device is designed in the Surface Mount package for general frequency controland tuning applications. It provides solid–state reliability in replacement of mechanical tuning 22 pF Nominal 30Volts
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MMBV3102LT1
30Volts
236AB)
20Vdc
MMBV3102LT1
Diode Capacitance
Diode 1
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CH551H-30
Abstract: CH520S-30PT CH551H-30PT CH551H
Text: E L E C T R O N I C CH551H-30PT Schottky Rectifier - 0.5Amp 30Volt □ Features -For surface mounted applications -Low profile package -Built-in strain relief -Metal silicon junction, majority carrier conduction -Low power loss, high efficiency -High current capability, low forward voltage drop
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CH551H-30PT
30Volt
OD-323
CH551H-30
CH520S-30PT
CH551H-30PT
CH551H
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Untitled
Abstract: No abstract text available
Text: MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# BAT54WS Features • • • • x 200mWatt, 30Volt Schottky Barrier Diode &' * +$ ,-
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BAT54WS
200mWatt,
30Volt
OD323
200mA
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11EQS03L
Abstract: No abstract text available
Text: SBD Type :11EQS03L OUTLINE DRAWING FEATURES ∗ Miniature Size * Extremely Low Forward Voltage Drop * Low Forward Voltage Drop * High Surge Capability * 30volts trough 100volts Types Available * 26mm and 52mm Inside Tape Spacing Package Available Maximum Ratings
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11EQS03L
30volts
100volts
11EQS03L
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21dq09
Abstract: No abstract text available
Text: SBD Type : 21D 21DQ09 OUTLINE DRAWING FEATURES * Miniature Size * Low Forward Voltage Drop * Low Power Loss, High Efficiency * High Surge Capability * 30volts trough 100volts Types Available * 52mm Inside Tape Spacing Package Available Maximum Ratings Rating
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21DQ09
30volts
100volts
21dq09
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21dq04
Abstract: No abstract text available
Text: SBD Type : 21D 21DQ04 OUTLINE DRAWING FEATURES * Miniature Size * Low Forward Voltage Drop * Low Power Loss, High Efficiency * High Surge Capability * 30volts trough 100volts Types Available * 52mm Inside Tape Spacing Package Available Maximum Ratings Rating
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21DQ04
30volts
100volts
21dq04
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Untitled
Abstract: No abstract text available
Text: SBD Type :11EQS06 OUTLINE DRAWING FEATURES * Miniature Size * Low Forward Voltage Drop * High Surge Capability * 30volts trough 100volts Types Available * 26mm and 52mm Inside Tape Spacing Package Available Maximum Ratings Rating Repetitive Peak Reverse Voltage
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11EQS06
30volts
100volts
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Untitled
Abstract: No abstract text available
Text: SBD Type : 31D 31DQ06 OUTLINE DRAWING FEATURES * Low Forward Voltage Drop * Low Power Loss, High Efficiency * High Surge Capability * 30volts trough 100volts Types Available Maximum Ratings Rating Repetitive Peak Reverse Voltage Non-repetitive Peak Reverse Voltage
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31DQ06
30volts
100volts
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31DQ04
Abstract: Diode 31DQ04
Text: SBD Type : 31D 31DQ04 OUTLINE DRAWING FEATURES * Low Forward Voltage Drop * Low Power Loss, High Efficiency * High Surge Capability * 30volts trough 100volts Types Available Maximum Ratings Rating Repetitive Peak Reverse Voltage Non-repetitive Peak Reverse Voltage
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31DQ04
30volts
100volts
31DQ04
Diode 31DQ04
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31DQ04
Abstract: No abstract text available
Text: SBD Type : 31D 31DQ04 OUTLINE DRAWING FEATURES * Low Forward Voltage Drop * Low Power Loss, High Efficiency * High Surge Capability * 30volts trough 100volts Types Available Maximum Ratings Rating Repetitive Peak Reverse Voltage Non-repetitive Peak Reverse Voltage
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31DQ04
30volts
100volts
20x20x1t
31DQ04
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21DQ06
Abstract: DQ06
Text: SBD Type : 21D 21DQ06 OUTLINE DRAWING FEATURES * Miniature Size * Low Forward Voltage Drop * Low Power Loss, High Efficiency * High Surge Capability * 30volts trough 100volts Types Available * 52mm Inside Tape Spacing Package Available Maximum Ratings Rating
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21DQ06
30volts
100volts
21DQ06
DQ06
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MBRH30030(R)L
Abstract: No abstract text available
Text: DACO SEMICONDUCTOR CO., LTD. MBRH30030 R L LOW VF SCHOTTKY DIODE MODULE TYPE 300A Features High Surge Capability 300 Amp Rectifier 30Volts HALF PACKAGE Maximum Ratings D Operating Temperature: -40 C to +100 Storage Temperature: -40 C to +150 Part Number MBRH30030(R)L
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MBRH30030
30Volts
400sistive
MBRH30030(R)L
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MBRTA80030(R)L
Abstract: No abstract text available
Text: DACO SEMICONDUCTOR CO., LTD. MBRTA80030 R L LOW VF SCHOTTKY DIODE MODULE TYPE 800A 800 Amp Rectifier 30Volts Features High Surge Capability Isolation Type Package Electrically Isolation base plate HEAVY THREE TOWER K J C D Maximum Ratings Operating Temperature: -40 C to +100
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MBRTA80030
30Volts
MBRTA80030(R)L
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MBRH20030(R)L
Abstract: No abstract text available
Text: DACO SEMICONDUCTOR CO., LTD. MBRH20030 R L LOW VF SCHOTTKY DIODE MODULE TYPE 200A Features High Surge Capability 200 Amp Rectifier 30Volts HALF PACKAGE Maximum Ratings D Operating Temperature: -40 C to +100 Storage Temperature: -40 C to +150 Part Number MBRH20030(R)L
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MBRH20030
30Volts
300sistive
MBRH20030(R)L
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IRHNB7Z60
Abstract: IRHNB8Z60
Text: PD - 91754 IRHNB7Z60 IRHNB8Z60 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR N-CHANNEL MEGA RAD HARD Ω , MEGA RAD HARD HEXFET 30Volt, 0.009Ω International Rectifier’s RAD HARD technology HEXFETs demonstrate immunity to SEE failure. Additionally, under identical pre- and post-irradiation test
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IRHNB7Z60
IRHNB8Z60
30Volt,
patente90245,
IRHNB7Z60
IRHNB8Z60
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31DQ09
Abstract: 31DQ
Text: SBD Type : 31D 31DQ09 OUTLINE DRAWING FEATURES * Low Forward Voltage Drop * Low Power Loss, High Efficiency * High Surge Capability * 30volts trough 100volts Types Available Maximum Ratings Rating Repetitive Peak Reverse Voltage Without Fin or Average Rectified
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31DQ09
30volts
100volts
31DQ09
31DQ
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6178
Abstract: No abstract text available
Text: MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# BAT54W Features • • • • x 200mWatt, 30Volt Schottky Barrier Diode Fast Switching Low Turn-on Voltage
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BAT54W
200mWatt,
30Volt
OD123
200mA
600mA
6178
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BAT54WX
Abstract: No abstract text available
Text: MCC omponents 20736 Marilla Street Chatsworth !"# $ % !"# BAT54WX Features • • Extremely-Fast Switching Speed Low Forward Voltage Drop 200mWatt, 30Volt Schottky Diodes Maxim um Ratings Symbol
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BAT54WX
200mWatt,
30Volt
OD-523
100mA
BAT54WX
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Untitled
Abstract: No abstract text available
Text: SBD Type :11EQS09 OUTLINE DRAWING FEATURES * Miniature Size * Low Forward Voltage Drop * High Surge Capability * 30volts trough 100volts Types Available * 26mm and 52mm Inside Tape Spacing Package Available Maximum Ratings Rating Repetitive Peak Reverse Voltage
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11EQS09
30volts
100volts
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11EQS04
Abstract: No abstract text available
Text: SBD Type :11EQS04 OUTLINE DRAWING FEATURES * Miniature Size * Low Forward Voltage Drop * High Surge Capability * 30volts trough 100volts Types Available * 26mm and 52mm Inside Tape Spacing Package Available Maximum Ratings Rating Repetitive Peak Reverse Voltage
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11EQS04
30volts
100volts
11EQS04
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2N2646-47
Abstract: D5J44 2N2646 2N2646.47 scr firing circuits dsj44 SCR 2N2646 VBII SITN
Text: Silicon Unijunction Transistor Please refer to specification 2N2646-47 for further information on this device. a b so lu te m axim um ra tin g s: 2 5 ° C Pow er D issipation (Note 1) RMS Em itter C urrent 300 mW 50 mA 2Amperes 30Volts 35 Volts —6 5 °C to + 1 2 5 ‘
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OCR Scan
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2N2646-47
30Volts
35Volts
10/xF
D5J44
2N2646
2N2646.47
scr firing circuits
dsj44
SCR 2N2646
VBII
SITN
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