30A DIODE Search Results

Contextual Info: RURG3060_F085 30A, 600V Ultrafast Rectifier Features 30A, 600V Ultrafast Rectifier • High Speed Switching trr=60ns(Typ. @ IF=30A ) The RURG3060_F085 is an ultrafast diode with soft recovery characteristics (trr<80ns). It has low forward voltage drop and is

Contextual Info: ADVANCED POWER TECHNOLOGY b3E D 0557^ ÜDOllbfl 704 H A V P ADVANCED POW ER TECHNOLOGY' APT2X31D60J APT2X31D50J APT2X31D40J 600V 500V 400V 30A 30A 30A DUAL DIE ISOTOP PACKAGE ULTRAFAST SOFT RECOVERY DUAL RECTIFIER DIODES PRODUCT APPLICATIONS PRODUCT FEATURES

30NF20

Abstract: mosfet 30a 200v TO247 package dissipation 30NF20 st JESD97 STB30NF20 STP30NF20 STW30NF20
Contextual Info: STP30NF20 - STB30NF20 STW30NF20 N-channel 200V - 0.065Ω - 30A - TO-220/TO-247/D2PAK Low gate charge STripFET Power MOSFET Features Type VDSS RDS on ID PTOT STP30NF20 200V 0.075Ω 30A 125W STW30NF20 200V 0.075Ω 30A 125W STB30NF20 200V 0.075Ω 30A

30NF20

Abstract: STP30NF20 JESD97 STB30NF20 STW30NF20
Contextual Info: STP30NF20 - STB30NF20 STW30NF20 N-channel 200V - 0.065Ω - 30A - TO-220/TO-247/D2PAK Low gate charge STripFET Power MOSFET Features Type VDSS RDS on ID PTOT STP30NF20 200V 0.075Ω 30A 125W STW30NF20 200V 0.075Ω 30A 125W STB30NF20 200V 0.075Ω 30A

Contextual Info: STP30NF20 - STB30NF20 STW30NF20 N-channel 200V - 0.065Ω - 30A - TO-220/TO-247/D2PAK Low gate charge STripFET Power MOSFET Features Type VDSS RDS on ID PTOT STP30NF20 200V 0.075Ω 30A 125W STW30NF20 200V 0.075Ω 30A 125W STB30NF20 200V 0.075Ω 30A

Contextual Info: RURG3060CC_F085 30A, 600V Ultrafast Rectifier Features 30A, 600V Ultrafast Rectifier • High Speed Switching trr=60ns(Typ. @ IF=30A ) The RURG3060_F085 is an dual ultrafast diode with soft recovery characteristics (trr<80ns). It has low forward voltage drop and is silicon nitride passivated ionimplanted epitaxial planar construction.

Contextual Info: RHRG3060_F085 30A, 600V Hyperfast Rectifier Features Max Ratings 600V, 30A • High Speed Switching ( trr=45ns(Typ.) @ IF=30A ) The RHRG3060_F085 is an Hyperfast diode with soft recovery characteristics (trr < 45ns). It has half the recovery time of ultrafast diode and is of silicon nitride

apt2x30d100j

Contextual Info: A dvanced P ow er Te c h n o l o g y " APT2X30D100J APT2X30D90J APT2X30D80J 1000V 900V 800V 30A 30A 30A DUAL DIE ISOTOP PACKAGE ULTRAFAST SOFT RECOVERY DUAL RECTIFIER DIODES PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode •Switchmode Power Supply

Contextual Info: RURG3060_F085 30A, 600V Ultrafast Rectifier Features 30A, 600V Ultrafast Rectifier • High Speed Switching trr=60ns(Typ. @ IF=30A ) The RURG3060_F085 is an ultrafast diode with soft recovery characteristics (trr< 80ns). It has low forward voltage drop and is silicon nitride passivated ionimplanted epitaxial planar construction.

Contextual Info: ISL9R3060G2_F085 30A, 600V Ultrafast Rectifier Features 30A, 600V Ultrafast Rectifier • High Speed Switching trr=102ns(Typ. @ IF=30A ) The ISL9R3060G2_F085 is a Stealth dual diode optimized for low loss performance in high frequency hard switched applications.The Stealth™ family exhibits low reverse recovery current

Contextual Info: ISL9R3060G2_F085 30A, 600V Stealth Rectifier Features 30A, 600V Stealth Rectifier • High Speed Switching trr=31ns(Typ. @ IF=30A ) The ISL9R3060G2_F085 is Stealth diode optimized for low loss performance in high frequency hard switched applications.

APT2X31D80J

Contextual Info: K2 A2 A d v a n ced P o w er Te c h n o l o g y * K1 APT2X31D100J APT2X31D90J APT2X31D80J A1 1000V 30A 900V 30A 800V 30A DUAL DIE ISOTOP PACKAGE ULTRAFAST SOFT RECOVERY DUAL RECTIFIER DIODES PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode

EE-25 transformer

Abstract: Transformer EE-25 Transformer EE-25 100 EE-25 200 6 transformer APT30D100B APT30D80B APT30D90B CR diode transient
Contextual Info: ADVANCE] POWER TECHNOLOGY b3E » • O ZS ?1^ 0GQlQ3Li 213 H A V P A d va n c ed P o w er Tec h n o lo g y 1 - Cathode 2 - Anode Back of Case-Cathode APT30D100B APT30D90B APT30D80B 1000V 900V 800V 30A 30A 30A ULTRAFAST SOFT RECOVERY RECTIFIER DIODE PRODUCT APPLICATIONS

Contextual Info: STP36NF06L STB36NF06L N-channel 60V - 0.032Ω - 30A - TO-220 - D2PAK STripFET II Power MOSFET General features Type VDSS RDS on ID STP36NF06L 60V < 0.04Ω 30A STB36NF06L 60V < 0.04Ω 30A • Exceptional dv/dt capability ■ 100% avalanche tested ■

30NF20

Abstract: JESD97 STP30NF20 STW30NF20
Contextual Info: STP30NF20 STW30NF20 N-channel 200V - 0.065Ω - 30A - TO-220/TO-247 Low gate charge STripFET Power MOSFET General features • ■ Type VDSS RDS on ID PTOT STP30NF20 200V 0.075Ω 30A 125W STW30NF20 200V 0.075Ω 30A 125W Gate charge minimized ) s ( ct

30NF20

Abstract: STP30NF20 STW30NF20 JESD97
Contextual Info: STP30NF20 STW30NF20 N-channel 200V - 0.065Ω - 30A - TO-220/TO-247 Low gate charge STripFET Power MOSFET General features • Type VDSS RDS on ID PTOT STP30NF20 200V 0.075Ω 30A 125W STW30NF20 200V 0.075Ω 30A 125W Gate charge minimized ■ 100% avalanche tested

eakt

Contextual Info: ADVANCED POlilER TECHNOLOGY L3E J> 05S7TDT A 0D011b4 ObT H A V P d v a n c e d P ow er T e c h n o lo g y K 2 0 —! APT2X30D60J APT2X30D50J APT2X30D40J Ai O —! 600V 30A 500V 30A 400V 30A DUAL DIE ISOTOP® PACKAGE ULTRAFAST SOFT RECOVERY DUAL RECTIFIER DIODES

Contextual Info: A D V A NC E D POÜIER TECHNOLOGY b3E □5 5 7 ^ D DGDllSb T<i 2 H A V P A d vanced P o w er Te c h n o l o g y APT2X31D100J APT2X31D90J APT2X31D80J 1000V 900V 800V 30A 30A 30A DUAL DIE ISOTOP® PACKAGE ULTRAFAST SOFT RECOVERY DUAL RECTIFIER DIODES PRODUCT APPLICATIONS

200V AUTOMOTIVE MOSFET

Abstract: 30NF20 JESD97 STP30NF20 STW30NF20
Contextual Info: STP30NF20 STW30NF20 N-channel 200V - 0.065Ω - 30A - TO-220/TO-247 Low gate charge STripFET Power MOSFET General features • Type VDSS RDS on ID PTOT STP30NF20 200V 0.075Ω 30A 125W STW30NF20 200V 0.075Ω 30A 125W Gate charge minimized 3 3 2 1 1 ■

IGBT STGW30NC60W

Abstract: GW30NC60W GP30NC60W JESD97 STGP30NC60W STGW30NC60W
Contextual Info: STGP30NC60W STGW30NC60W N-channel 30A - 600V - TO-247 - TO-220 Ultra fast switching PowerMESH IGBT General features Type VCES VCE sat Max @25°C IC @100°C STGW30NC60W STGP30NC60W 600V 600V < 2.5V < 2.5V 30A 30A 3 • High frequency operation ■ Lower CRES / CIES ratio (no cross-conduction

IGBT STGW30NC60W

Abstract: W30NC60W STGW30NC60W schematic diagram UPS 600 STGP30NC60W W30NC60
Contextual Info: STGP30NC60W STGW30NC60W N-CHANNEL 30A - 600V - TO-247 - TO-220 Ultra FAST Switching PowerMESH IGBT General features • Type VCES VCE sat (Max)@ 25°C IC @100°C STGW30NC60W STGP30NC60W 600V 600V < 2.5V < 2.5V 30A 30A ■ HIGH FREQUENCY OPERATION ■ VERY SOFT ULTRA FAST RECOVERY ANTI

Contextual Info: SiS435DNT Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES • TrenchFET Gen III P-Channel Power MOSFET PRODUCT SUMMARY VDS (V) - 20 RDS(on) () Max. ID (A)a 0.0054 at VGS = - 4.5V - 30a 0.0060 at VGS = - 3.7 V - 30a 0.0083 at VGS = - 2.5 V - 30a

GW30NC60W

Contextual Info: STGP30NC60W STGW30NC60W N-CHANNEL 30A - 600V - TO-247 - TO-220 Ultra FAST Switching PowerMESH IGBT General features • ■ Type VCES VCE sat Max @25°C IC @100°C STGW30NC60W STGP30NC60W 600V 600V < 2.5V < 2.5V 30A 30A 3 High frequency operation 1 Lower CRES / CIES ratio (no cross-conduction

Contextual Info: 30A CELL SERIES 硅整流器 Silicon Rectifier •特征 Features Io ● VRRM ● ● ● ■外形尺寸和印记 30A 100V~1000V Outline Dimensions and Mark 30A CELL 电极表面高可焊性 Solderable electrode surface Silicone Rubber .087 2.2 .071(1.8)