30A HIGH SPEED DIODE Search Results

Contextual Info: YG838C03R 30A (30V / 30A ) Outline drawings, mm SCHOTTKY BARRIER DIODE TO-220F Type name Polarity mark Features Low VF Super high speed switching Connection diagram High reliability by planer design Applications High speed power switching 1 2 3 Maximum ratings and characteristics

30A high speed diode

Contextual Info: YG838C03R 30A (30V / 30A ) Outline drawings, mm SCHOTTKY BARRIER DIODE TO-220F Type name Polarity mark Features Low VF Super high speed switching Connection diagram High reliability by planer design Applications High speed power switching 1 2 3 Maximum ratings and characteristics

YG838C04R

Contextual Info: YG838C04R 30A (40V / 30A ) Outline drawings, mm SCHOTTKY BARRIER DIODE TO-220F Type name Polarity mark Features Low VF Super high speed switching Connection diagram High reliability by planer design Applications High speed power switching 1 2 3 Maximum ratings and characteristics

Contextual Info: ISL9R3060G2_F085 30A, 600V Stealth Rectifier Features 30A, 600V Stealth Rectifier • High Speed Switching trr=31ns(Typ. @ IF=30A ) The ISL9R3060G2_F085 is Stealth diode optimized for low loss performance in high frequency hard switched applications.

Contextual Info: RURG3060_F085 30A, 600V Ultrafast Rectifier Features 30A, 600V Ultrafast Rectifier • High Speed Switching trr=60ns(Typ. @ IF=30A ) The RURG3060_F085 is an ultrafast diode with soft recovery characteristics (trr<80ns). It has low forward voltage drop and is

Contextual Info: ISL9R3060G2_F085 30A, 600V Ultrafast Rectifier Features 30A, 600V Ultrafast Rectifier • High Speed Switching trr=102ns(Typ. @ IF=30A ) The ISL9R3060G2_F085 is a Stealth dual diode optimized for low loss performance in high frequency hard switched applications.The Stealth™ family exhibits low reverse recovery current

Contextual Info: RURG3060CC_F085 30A, 600V Ultrafast Rectifier Features 30A, 600V Ultrafast Rectifier • High Speed Switching trr=60ns(Typ. @ IF=30A ) The RURG3060_F085 is an dual ultrafast diode with soft recovery characteristics (trr<80ns). It has low forward voltage drop and is silicon nitride passivated ionimplanted epitaxial planar construction.

Contextual Info: RHRG3060_F085 30A, 600V Hyperfast Rectifier Features Max Ratings 600V, 30A • High Speed Switching ( trr=45ns(Typ.) @ IF=30A ) The RHRG3060_F085 is an Hyperfast diode with soft recovery characteristics (trr < 45ns). It has half the recovery time of ultrafast diode and is of silicon nitride

Contextual Info: RURG3060_F085 30A, 600V Ultrafast Rectifier Features 30A, 600V Ultrafast Rectifier • High Speed Switching trr=60ns(Typ. @ IF=30A ) The RURG3060_F085 is an ultrafast diode with soft recovery characteristics (trr< 80ns). It has low forward voltage drop and is silicon nitride passivated ionimplanted epitaxial planar construction.

F30S60S

Contextual Info: FFH30S60S tm Stealth 2 Rectifier Features 30A, 600V Stealth 2 Rectifier • High Speed Switching, rrt < 40ns @ IF = 30A • High Reverse Voltage and High Reliability The FFH30S60S is stealth2 rectifier with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial

Contextual Info: FGA30N120FTD tm 1200V, 30A Trench IGBT Features General Description • Field stop trench technology • High speed switching • Low saturation voltage: VCE sat = 1.6V @ IC = 30A • High input impedance Using advanced field stop trench technology, Fairchild’s 1200V

Contextual Info: FGH30N120FTD tm 1200V, 30A Trench IGBT Features General Description • Field stop trench technology • High speed switching • Low saturation voltage: VCE sat = 1.6V @ IC = 30A • High input impedance Using advanced field stop trench technology, Fairchild’s 1200V

Schottky 30A 40v

Contextual Info: http://www.fujisemi.com MS838C04 40V/30A FUJI Diode Schottky Barrier Diode Features • Low VF • Super high speed switching • High reliability by planer design Outline Drawings [mm] Connection diagram TFP 838C04 838C04 Applications • High speed power switching

F30S60S

Contextual Info: STEALTH II Rectifier FFP30S60S tm Features 30A, 600V STEALTHTM II Rectifier • High Speed Switching, rrt < 40ns @ IF = 30A • High Reverse Voltage and High Reliability The FFP30S60S is STEALTHTM II rectifier with soft recovery charac-teristics. It is silicon nitride passivated ion-implanted epitaxial planar construction.

30A high speed diode

Abstract: TS808C06
Contextual Info: TS808C06 30A SCHOTTKY BARRIER DIODE • Outline Drawing H Features • Surface mount device • Lo w V f • Super high speed switching • High reliability by planer design I Applications • High speed power switching ■ Maximum Ratings & Characteristics

30A high speed diode

Abstract: TS808C04
Contextual Info: _ TS808C04 30A SCHOTTKY BARRIER DIODE • Outline Drawing I Features • Surface mount device • Lo w V f • Super high speed switching • High reliability by planer design I Applications • High speed power switching ■ Maximum Ratings & Characteristics

F30S60S

Abstract: FFH30S60STU F30S60 FFH30S60S
Contextual Info: FFH30S60S tm Stealth 2 Rectifier Features 30A, 600V Stealth 2 Rectifier • High Speed Switching, trr < 40ns @ IF = 30A The FFH30S60S is stealth2 rectifier with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction.

F30S60S

Abstract: FFP30S60S FFP30S60STU F30S60
Contextual Info: STEALTH II Rectifier FFP30S60S tm Features 30A, 600V STEALTHTM II Rectifier • High Speed Switching, trr < 40ns @ IF = 30A The FFP30S60S is STEALTHTM II rectifier with soft recovery charac-teristics. It is silicon nitride passivated ion-implanted epitaxial planar construction.

ESAD83M-004

Contextual Info: ESAD83M-004 30A Outline Drawing SCHOTTKY BARRIER DIODE • Features • Insulated package by fully molding • Lo w V f • Super high speed switching • High reliability by planer design I Applications High speed power switching ■ Maximum Ratings & Characteristics

Contextual Info: TS808C06 30A (60V / 30A ) 0.9 ±0.3 Outline drawings, mm 4.5 ±0.2 1.32 3.0 ±0.3 1.5 Max 10 +0.5 9.3 ±0.5 SCHOTTKY BARRIER DIODE +0.2 1.2 ±0.2 0.8 —0.1 0.4 +0.2 2.7 5.08 1. Gate 2, 4. Drain 3. Source Features JEDEC Low VF EIAJ Super high speed switching

F30S60S

Contextual Info: STEALTH II Rectifier FFP30S60S tm Features 30A, 600V STEALTHTM II Rectifier • High Speed Switching, trr < 40ns @ IF = 30A The FFP30S60S is STEALTHTM II rectifier with soft recovery charac-teristics. It is silicon nitride passivated ion-implanted epitaxial planar construction.

Contextual Info: TS808C04 30A (40V / 30A ) 0.9 ±0.3 Outline drawings, mm 4.5 ±0.2 1.32 3.0 ±0.3 1.5 Max 10 +0.5 9.3 ±0.5 SCHOTTKY BARRIER DIODE +0.2 1.2 ±0.2 0.8 —0.1 0.4 +0.2 2.7 5.08 1. Gate 2, 4. Drain 3. Source Features JEDEC Low VF EIAJ Super high speed switching

Contextual Info: TS808C04 30A (40V / 30A ) 0.9 ±0.3 Outline drawings, mm 4.5 ±0.2 1.32 3.0 ±0.3 1.5 Max 10 +0.5 9.3 ±0.5 SCHOTTKY BARRIER DIODE +0.2 1.2 ±0.2 0.8 —0.1 0.4 +0.2 2.7 5.08 1. Gate 2, 4. Drain 3. Source Features JEDEC Low VF EIAJ Super high speed switching

Contextual Info: TS808C04 30A (40V / 30A ) 0.9 ±0.3 Outline drawings, mm 4.5 ±0.2 1.32 3.0 ±0.3 1.5 Max 10 +0.5 9.3 ±0.5 SCHOTTKY BARRIER DIODE +0.2 1.2 ±0.2 0.8 —0.1 0.4 +0.2 2.7 5.08 1. Gate 2, 4. Drain 3. Source Features JEDEC Low VF EIAJ Super high speed switching