30A16 Search Results

Contextual Info: 2Mx32, 50 - 80ns, TSTACK 30A165-15 A 256 Megabit CMOS DRAM DPnnD8MX32RY5 PRELIMINARY DESCRIPTION: The DPnnD8MX32RY5 is the 8 Meg x 32 Dynamic RAM module that utilize the new and innovative space saving TSOP stacking technology. The module is constructed of four 4 Meg

DP5Z4MX16PA3

Abstract: DP5Z4MX16PH3 DP5Z4MX16PI3 DP5Z4MX16PJ3 DP5Z4MX16PY DP5Z4MX16PY3
Contextual Info: 4Mx16, 120 - 200ns, STACK/PGA 30A161-04 B 64 Megabit FLASH EEPROM DP5Z4MX16Pn3 PRELIMINARY DP5Z4MX16PY3 DESCRIPTION: The DP5Z4MX16Pn3 ‘’SLCC’’ devices are a revolutionary new memory subsystem using Dense-Pac Microsystems’ ceramic Stackable Leadless Chip

Memory

Contextual Info: 512Kx8/256Kx16/128Kx32, 15 - 35ns, 30A167-00 A Surface Mount FTE32KX32XP/XHP 1 Megabit CMOS EEPROM DESCRIPTION: The FTE32KX32XP/XHP is a high-performance Electrically Erasable and Programmable Read Only Memory EEPROM module and may be organised as 32K X 32, 64K X 16 or 128K

Contextual Info: 512Kx8/256Kx16/128Kx32, 150 - 250ns, PGA 30A169-00 A 4 Megabit 5 Volt CMOS FLASH EEPROM DPZ128X32XP/XHP DESCRIPTION: The DPZ128X32XP/XHP is a 4 megabit 5 Volt only CMOS Flash EEPROM Electrically In-System Programmable and Erasable ROM memory module. The module is built with

DP5Z4MW16PA3

Abstract: DP5Z4MW16PH3 DP5Z4MW16PI3 DP5Z4MW16PJ3 DP5Z4MW16PY3
Contextual Info: 4Mx16, 120 - 200ns, STACK/PGA 30A161-24 A 64 Megabit FLASH EEPROM DP5Z4MW16Pn3 PRELIMINARY DP5Z4MW16PY3 DESCRIPTION: The DP5Z4MW16Pn3 ‘’SLCC’’ devices are a revolutionary new memory subsystem using Dense-Pac Microsystems’ ceramic Stackable Leadless Chip

Memory

Contextual Info: 512Kx8/256Kx16/128Kx32, 30A167-00 A 15 - 35ns, Surface Mount FTS128KX32XP 4 Megabit 5 Volt CMOS SRAM DESCRIPTION: The FTS128KX32XP/XHP is a 68-pin surface mount module consisting of four 128K x 8 SRAM devices in plastic TSOP packages surface mounted on a FR-4

STATIC RAM 256KX16

Abstract: "Video RAM" KM4216C528 Dynamic RAM icc3 KM4216C258 256KX16 512Kx1
Contextual Info: 16Mx36, 50 - 70ns, TSTACK 30A165-33 B M-Densus High Density Memory Device 8 Megabit CMOS VIDEO RAM DPO512X16MGY5-CM PRELIMINARY DESCRIPTION: The DPO512X16MGY5-CM is a 512Kx16 bit Dual Port Dynamic RAM module that utilize the new and innovative space saving SOP stacking technology.

DRAM 8Mx32 tsop

Abstract: 1431 transistor equivalent Dense-Pac Microsystems Dynamic RAM 8MX32
Contextual Info: 8Mx32, 50 - 70ns, TSTACK 30A165-25 A 256 Megabit CMOS DRAM DPnnD8MX32RKY5 PRELIMINARY DESCRIPTION: The DPnnD8MX32RKY5 is the 8 Meg x 32 Dynamic RAM module that utilize the new and innovative space saving TSOP stacking technology. The module is constructed of four

DP5Z1MM16PH3

Abstract: DP5Z1MM16PI3 DP5Z1MM16PJ3 DP5Z1MM16PY DP5Z1MW16PA3
Contextual Info: 1Mx16, 120 - 200ns, STACK/PGA 30A162-21 A 16 Megabit FLASH EEPROM DP5Z1MM16PY/I3/H3/J3/DP5Z1MW16PA3 PRELIMINARY DESCRIPTION: The DP5Z1MM16PY/I3/H3/J3/DP5Z1MW16PA3 ‘’SLCC’’ devices are a revolutionary new memory subsystem using Dense-Pac Microsystems’

DP5Z2ME16PA3

Abstract: DP5Z2ME16PH3 DP5Z2ME16PI3 DP5Z2ME16PJ3 DP5Z2ME16PY
Contextual Info: 2Mx16, 120 - 200ns, STACK/PGA 30A161-02 A 32 Megabit FLASH EEPROM DP5Z2ME16Pn3 PRELIMINARY DESCRIPTION: The DP5Z2ME16Pn3 ‘’SLCC’’ devices are a revolutionary new memory subsystem using Dense-Pac Microsystems’ ceramic Stackable Leadless Chip Carriers SLCC . Available unleaded, straight leaded, ‘’J’’ leaded, gullwing

DP5Z2MW16PA3

Abstract: DP5Z2MW16PH3 DP5Z2MW16PI3 DP5Z2MW16PJ3 DP5Z2MW16PY3
Contextual Info: 2Mx16, 120 - 200ns, STACK/PGA 30A161-22 A 32 Megabit FLASH EEPROM DP5Z2MW16Pn3 PRELIMINARY DESCRIPTION: SLCC Stack The DP5Z2MW16Pn3 ‘’SLCC’’ devices are a revolutionary new memory subsystem using Dense-Pac Microsystems’ ceramic Stackable Leadless Chip

DPD8MX36RKY5

Contextual Info: 8Mx36, 50 - 70ns, TSTACK 30A165-26 A 256 Megabit CMOS DRAM w/ Parity DPD8MX36RKY5 PRELIMINARY DESCRIPTION: The DPD8MX36RKY5 is the 8 Meg x 36 Dynamic RAM module that utilize the new and innovative space saving TSOP stacking technology. The module is constructed of four 4 Meg x 16 and

32MX72

Contextual Info: 32Mx72, 10-12ns, DIMM 30A166-20 1 256 Megabyte SDRAM DIMM DPSD32MS72RW5 PIN-OUT DIAGRAM DESCRIPTION: The DPSD32MS72RW5 is a 32Mx72 SDRAM buffered DIMM consisting of thirty-six 64Mbit SDRAM devices configured as 18 stacked 128Mbit modules in a 2-bank architecture. 8-bit ECC is provided for error protection. All control lines are buffered

DP5Z2MK16PA3

Abstract: DP5Z2MK16PH3 DP5Z2MK16PI3 DP5Z2MK16PJ3 DP5Z2MK16PY
Contextual Info: 2Mx16, 120 - 200ns, STACK/PGA 30A161-02 A 32 Megabit FLASH EEPROM DP5Z2MK16Pn3 PRELIMINARY DESCRIPTION: The DP5Z2MK16n3 ‘’SLCC’’ devices are a revolutionary new memory subsystem using Dense-Pac Microsystems’ ceramic Stackable Leadless Chip Carriers SLCC . Available unleaded, straight leaded, ‘’J’’ leaded, gullwing

edo ram 8Mx16

Contextual Info: 8Mx16, 50 - 70ns, TSTACK 30A165-12 A 128 Megabit CMOS DRAM DPnnD8MX16RY5 PRELIMINARY DESCRIPTION: The DPnnD8MX16RY5 is the 8 Meg x 16 Dynamic RAM module that utilize the new and innovative space saving TSOP stacking technology. The module is constructed of two 4 Meg x 16

Contextual Info: 2Mx32, 50 - 80ns, TSTACK 30A164-15 1A 64 Megabit CMOS DRAM DPnnD2MX32PY5 PRELIMINARY DESCRIPTION: The DPnnD2MX32PY5 is the 2 Meg x 32 Dynamic RAM module that utilize the new and innovative space saving TSOP stacking technology. The module is constructed of four 1 Meg x 16

Contextual Info: 2Mx16, 50 - 70ns, TSTACK 30A164-12 3 32 Megabit CMOS DRAM DPnnD2MX16PY5 PRELIMINARY DESCRIPTION: The DPnnD2MX16PY5 is the 2 Meg x 16 Dynamic RAM module that utilize the new and innovative space saving TSOP stacking technology. The module is constructed of two 1 Meg x 16

1F7 1f8 1f9

Abstract: S068 TRANSISTOR 2A1 DA16 M35062 M35062-001SP M35062-XXXSP HSZ5 1a3 capacitor
Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

PTC SCK 055

Abstract: PTC SCK 052 30116 4116 2N M35061-002SP PAL 007 PAL 007 B PAL 007 c PAL 007 E M35061-XXXFP
Contextual Info: MITSUBISHI MICROCOMPUTERS M35061-XXXSP/FP SCREEN CHARACTER and PATTERN DISPLAY CONTROLLERS DESCRIPTION M35061-XXXSP/FP is CATV screen display control IC which can display 40 horizontal ✕ 17 (vertical). It has built-in SYRAM which can be used with character ROM.

PTC SCK 055

Abstract: scrolling led display circuit cr 29c PAL 007 PAL 007 B PTC SCK 052 S057 TH sck 083 M35062 M35062-001SP
Contextual Info: MITSUBISHI MICROCOMPUTERS M35062-XXXSP SCREEN CHARACTER and PATTERN DISPLAY CONTROLLERS DESCRIPTION M35062-XXXSP is CATV screen display control IC which can display 40 horizontal x 17 (vertical). It has built-in SYRAM which can be used with character ROM.

Contextual Info: 3 Megabit CMOS SRAM DENSE-PAC DPS128X24XP/XHP MICROSYSTEMS DESCRIPTION: The DPS128X24XP/XHP is a 68-pin surface mount module consisting of three 128K x 8 SRAM devices in plastic TSOP packages surface mounted on a FR-4 substrate. The module is available with either "J"-Leads or

Contextual Info: DENSE-PAC 32 Megabit FLASH EEPROM DP5Z2MX16Nn3 M I C R O S Y S T I:. M S PRELIM IN A R Y D ESC RIPTIO N : The DP5Z2MX16Nn3 "S LC C " devices are a revolutionary new memory subsystem using Dense-Pac Microsystems' ceramic Stackable Leadless Chip Carriers SLCC . Available unleaded, straight leaded, " J " leaded, gullwing

Contextual Info: Intel PCI 00 Approved 512 & 256 Megabyte Registered DIMM'S using Dense-Pac's Patented Stacked Memory devices for use in Intel® 440BX based Chip Set Nightshade & NightLite motherboards See Intel’s web page for more information:

Contextual Info: DENSE-PAC 128 Megabit CMOS DRAM DPnnD8MX16RY5 VI i C R O S Y S I’ K M s PRELIMINARY DESCRIPTION: The DPnnD8MX16RY5 isthe8Megx16 Dynamic RAM module that utilize the new and innovative space saving TSOP stacking technology. The module is constructed of two 4 Meg x 16